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    Cathode arrangement, electron gun, and lithography system comprising such electron gun
    61.
    发明申请
    Cathode arrangement, electron gun, and lithography system comprising such electron gun 有权
    阴极装置，电子枪和包括这种电子枪的光刻系统

    公开(公告)号：US20150187533A1

    公开(公告)日：2015-07-02

    申请号：US14578533

    申请日：2014-12-22

    Applicant: MAPPER LITHOGRAPHY IP B.V

    Inventor： Laura DINU-GÜRTLER ,  Eric Petrus HOGERVORST

    IPC: H01J29/62 ,  G03F7/20 ,  H01J29/48

    CPC classification number: H01J37/3174 ,  G03F7/70058 ,  H01J1/15 ,  H01J1/28 ,  H01J3/027 ,  H01J3/029 ,  H01J37/075 ,  H01J37/3177 ,  H01J2229/481 ,  H01J2237/061

    Abstract: The invention relates to a cathode arrangement comprising: a cathode body housing an emission surface for emitting electrons in a longitudinal direction, wherein the emission surface is bounded by an emission perimeter; a focusing electrode at least partially enclosing the cathode body in a transversal direction and comprising an electron transmission aperture for focusing the electrons emitted by the emission surface, wherein the aperture is bounded by an aperture perimeter, wherein the cathode body is moveably arranged within the focusing electrode over a maximum transversal distance from an aligned position, and wherein the aperture perimeter transversally extends over the emission surface and beyond the emission perimeter over an overlap distance that exceeds the maximum transversal distance.

    Abstract translation: 本发明涉及一种阴极装置，其包括：阴极体，其容纳用于沿纵向发射电子的发射表面，其中所述发射表面由发射周界限定; 聚焦电极至少部分地沿着横向包围阴极体并且包括用于聚焦由发射表面发射的电子的电子传输孔，其中所述孔被孔周边界定，其中阴极体可移动地布置在聚焦 电极，其距离对准位置的最大横向距离，并且其中所述孔径周边在超过所述最大横向距离的重叠距离上在所述发射表面上横向延伸超过所述发射周界。

    TARGET PROCESSING UNIT
    62.
    发明申请
    TARGET PROCESSING UNIT 有权
    目标处理单位

    公开(公告)号：US20150090895A1

    公开(公告)日：2015-04-02

    申请号：US14479648

    申请日：2014-09-08

    Applicant: Mapper Lithography IP B.V.

    Inventor： Johan Joost Koning ,  David Johannes van den Bergen

    IPC: H01J37/30 ,  B01J19/12 ,  H01J37/10

    CPC classification number: H01J37/023 ,  B01J19/12 ,  G03F7/708 ,  G03F7/70825 ,  G03F7/70833 ,  G03F7/70891 ,  G03F7/709 ,  G03F7/70975 ,  H01J37/10 ,  H01J37/20 ,  H01J37/3007 ,  H01J37/3177

    Abstract: The invention relates to a projection lens assembly for directing a beam toward a target. This assembly includes a lens support body (52) that spans a plane (P), and has a connection region (58) and a lateral edge (56). The lens support body is arranged for insertion into a frame (42) of a processing unit along an insertion direction (X) parallel with the plane (P). The projection lens assembly includes conduits (60-64) emanating from the connection region, and a conduit guiding body (70-81) for accommodating the conduits. The guiding body includes a first guiding portion (72) for guiding the conduits from the connection region, along the plane to a lateral region (B) beyond the lateral edge. The guiding body also includes a second guiding portion (78) for guiding the conduits from the lateral region (B) toward a tilted edge (79) of the conduit guiding body.

    Abstract translation: 本发明涉及一种用于将光束导向目标的投影透镜组件。 该组件包括跨越平面（P）的透镜支撑体（52），并具有连接区域（58）和侧边缘（56）。 透镜支撑体被布置成沿着与平面（P）平行的插入方向（X）插入到处理单元的框架（42）中。 投影透镜组件包括从连接区域发出的导管（60-64）和用于容纳导管的导管引导体（70-81）。 引导体包括用于将导管从连接区域沿着该平面引导到超过侧边缘的横向区域（B）的第一引导部分（72）。 引导体还包括用于将管道从侧向区域（B）引导到导管引导体的倾斜边缘（79）的第二引导部分（78）。

    Drying apparatus for use in a lithography system
    63.
    发明申请
    Drying apparatus for use in a lithography system 有权
    用于光刻系统的干燥装置

    公开(公告)号：US20150052776A1

    公开(公告)日：2015-02-26

    申请号：US14463711

    申请日：2014-08-20

    Applicant: Mapper Lithography IP B.V.

    Inventor： Hendrik Jan de Jong

    IPC: H01J37/317 ,  F26B21/00 ,  G03F7/20 ,  H01J37/20

    CPC classification number: H01J37/3177 ,  F26B21/004 ,  H01J37/20 ,  H01J2237/0437 ,  H01L21/67034

    Abstract: The invention relates to a drying apparatus for use in a lithography system for drying at least part of a surface on a first side of a planar target, such as a wafer. The apparatus has a drying device for eliminating liquid or droplets thereof from the first side of the planar target. The drying device has a first slit and a second slit arranged in close proximity of the target. A gap is present between the target and the drying device. Pressurized gas may be supplied via the first slit into the gap. The liquid may be discharged from the target by means of the pressurized gas through the second slit. The first and the second slit are configured to enable the pressurized gas to flow along the first side of the planar target substantially parallel to the planar target.

    Abstract translation: 本发明涉及一种用于光刻系统的干燥装置，用于干燥平面靶（如晶片）的第一面上的表面的至少一部分。 该装置具有用于从平面靶的第一侧消除液体或液滴的干燥装置。 干燥装置具有设置在目标附近的第一狭缝和第二狭缝。 目标和干燥装置之间存在间隙。 加压气体可以经由第一狭缝供给到间隙中。 液体可以通过第二狭缝通过加压气体从目标物排出。 第一和第二狭缝构造成使加压气体能够沿平面靶的第一侧基本平行于平面靶流动。

    PLASMA GENERATOR
    65.
    发明申请
    PLASMA GENERATOR 有权
    等离子发生器

    公开(公告)号：US20140231667A1

    公开(公告)日：2014-08-21

    申请号：US14348062

    申请日：2012-09-28

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Marc Smits ,  Chris Franciscus Jessica Lodewijk

    IPC: H01J37/32 ,  H01J37/30

    CPC classification number: H01J37/32082 ,  H01J37/3002 ,  H01J37/32862 ,  H05H1/30 ,  H05H1/46 ,  H05H2001/4667 ,  H05H2001/4675 ,  H05H2001/4682

    Abstract: An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) comprising a primary source chamber (15) and a first coil (4) for generating plasma in the primary source chamber, a secondary plasma source (25) comprising a secondary source chamber (16) and a second coil (26) for enhancing plasma generated by the primary plasma source and/or generating plasma in the secondary source chamber generating plasma in the primary source chamber, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to the secondary plasma source, and an outlet (14) for emitting at least a portion of the plasma generated by the arrangement.

    Abstract translation: 一种用于产生等离子体的装置，该装置包括主要等离子体源（1），其包括用于在初级源室中产生等离子体的初级源室（15）和第一线圈（4），次级等离子体源（25） 源室（16）和第二线圈（26），用于增强由初级等离子体源产生的等离子体和/或在次级源室中产生等离子体，在主源室中产生等离子体;空心引导体（11） 由初级等离子体源产生的等离子体的至少一部分等离子体源，以及用于发射由该装置产生的等离子体的至少一部分的出口（14）。

    METHOD OF AND SYSTEM FOR EXPOSING A TARGET
    66.
    发明申请
    METHOD OF AND SYSTEM FOR EXPOSING A TARGET 有权
    用于实现目标的方法和系统

    公开(公告)号：US20140042334A1

    公开(公告)日：2014-02-13

    申请号：US13935602

    申请日：2013-07-05

    Applicant: Mapper Lithography IP B.V.

    Inventor： Marco Jan-Jaco WIELAND

    IPC: H01J37/317

    CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00

    Abstract: The invention relates to a method of exposing a target by means of a plurality of beamlets. First, a plurality of beamlets is provided. The beamlets are arranged in an array. Furthermore, a target to be exposed is provided. Subsequently, relative movement in a first direction between the plurality of beamlets and the target is created. Finally, the plurality of beamlets is moved in a second direction, such that each beamlet exposes a plurality of scan lines on the target. The relative movement in the first direction and the movement of the plurality of beamlets in the second direction are such that the distance between adjacent scan lines exposed by the plurality of beamlets is smaller than a projection pitch Pproj,X in the first direction between beamlets of the plurality of beamlets in the array.

    Abstract translation: 本发明涉及通过多个子束曝光目标的方法。 首先，提供多个子束。 子束排列成阵列。 此外，提供要暴露的目标。 随后，产生在多个子束与目标之间的第一方向的相对运动。 最后，多个子束在第二方向上移动，使得每个子束在目标上露出多条扫描线。 第一方向上的相对移动和多个子束在第二方向上的移动使得由多个子束暴露的相邻扫描线之间的距离小于第一方向上的投影间距Pproj，X在子束之间的第一方向上 阵列中的多个子束。

    METHOD AND APPARATUS FOR ALIGNING SUBSTRATES ON A SUBSTRATE SUPPORT UNIT
    69.
    发明申请
    METHOD AND APPARATUS FOR ALIGNING SUBSTRATES ON A SUBSTRATE SUPPORT UNIT 审中-公开

    公开(公告)号：US20190258173A1

    公开(公告)日：2019-08-22

    申请号：US16343391

    申请日：2017-09-28

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Bart SCHIPPER

    IPC: G03F7/20 ,  H01L21/68 ,  G03F9/00

    Abstract: The invention relates to an alignment apparatus for aligning a substrate, and a substrate processing system comprising such alignment apparatus. The alignment apparatus comprises an alignment base for supporting said substrate and/or a substrate support member, and a force generating device for applying a contact force on said substrate.The force generating device comprises: an arm comprising a rigid proximal end a rigid distal end provided with a contact section for contacting an edge of said substrate, and an elastically deformable arm section extending between the rigid proximal and distal ends, a connection part connecting said rigid proximal end to said alignment base, said arm being movable with respect to said alignment base via said connection part, and an actuator for acting on and causing a displacement of said rigid proximal end, whereby said contact force, defined by said elastically deformable arm section, is applied to said substrate by said contact section.

    Lithography system, sensor, converter element and method of manufacture
    70.
    再颁专利
    Lithography system, sensor, converter element and method of manufacture 有权

    公开(公告)号：USRE47287E1

    公开(公告)日：2019-03-12

    申请号：US14602294

    申请日：2015-01-22

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Rabah Hanfoug

    IPC: G21K5/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/244 ,  H01J37/317 ,  H01J37/304

    Abstract: Charged particle beamlet lithography system for transferring a pattern to a surface of a target comprising a sensor for determining one or more characteristics of one or more charged particle beamlets. The sensor comprises a converter element for receiving charged particles and generating photons in response. The converter element comprises a surface for receiving one or more charged particle beamlets, the surface being provided with one or more cells for evaluating one or more individual beamlets. Each cell comprises a predetermined blocking pattern of one or more charged particle blocking structures forming multiple knife edges at transitions between blocking and non-blocking regions along a predetermined beamlet scan trajectory over the converter element surface. The converter element surface is covered with a coating layer substantially permeable for said charged particles and substantially impermeable for ambient light. An electrically conductive layer is located between the coating layer and the blocking structures.

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