公开(公告)号：US20190202687A1

公开(公告)日：2019-07-04

申请号：US16334196

申请日：2017-09-18

Applicant: Robert Bosch GmbH

Inventor： Arne Dannenberg ,  Torsten Kramer ,  Joachim Fritz ,  Thomas Friedrich

IPC: B81C1/00 ,  B81B7/00 ,  G01L9/00 ,  G01L19/14

CPC classification number: B81C1/00325 ,  B81B7/0048 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2203/035 ,  G01L9/0042 ,  G01L9/0045 ,  G01L19/0076 ,  G01L19/146

Abstract: A method for producing a micromechanical pressure sensor. The method includes: providing a MEMS wafer having a silicon substrate and a first cavity developed therein underneath a sensor diaphragm; providing a second wafer; bonding the MEMS wafer to the second wafer; and exposing a sensor core from the rear side; a second cavity being formed in the process between the sensor core and the surface of the silicon substrate, and the second cavity being developed with the aid of an etching process which is carried out using etching parameters that are modified in a defined manner.

公开(公告)号：US09764942B2

公开(公告)日：2017-09-19

申请号：US15147197

申请日：2016-05-05

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Antti Iihola ,  Altti Torkkeli ,  Ville-Pekka Rytkönen ,  Matti Liukku

IPC: B81B3/00 ,  B81C1/00 ,  G01P15/125 ,  G01P15/18 ,  G01C19/56

CPC classification number: B81B3/0021 ,  B81B3/0094 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C1/00357 ,  B81C2201/0112 ,  B81C2201/0132

Abstract: The present invention relates to a micromechanical device comprising a multi-layer micromechanical structure including only homogenous silicon material. The device layer comprises at least a rotor and at least two stators. At least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a first surface of the device layer and at least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a second surface of the device layer.

公开(公告)号：US20170166438A1

公开(公告)日：2017-06-15

申请号：US14969329

申请日：2015-12-15

Applicant: Bucknell C. Webb

Inventor： Bucknell C. Webb

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0056 ,  B81B2201/012 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C1/00619 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0178 ,  B81C2203/0109 ,  B81C2203/0136 ,  H01H59/0009 ,  H01H2001/0078

Abstract: Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

公开(公告)号：US09656858B2

公开(公告)日：2017-05-23

申请号：US14336477

申请日：2014-07-21

Applicant: Atlantic Inertial Systems Limited

Inventor： Tracey Hawke ,  Mark Venables ,  Ian Sturland ,  Rebecka Eley

IPC: H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  H01L29/06 ,  B81C1/00 ,  B81B3/00 ,  H01L21/3065 ,  H01L21/308

CPC classification number: B81C1/00531 ,  B81B3/0064 ,  B81B2201/033 ,  B81B2203/033 ,  B81C1/00388 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/3065 ,  H01L21/308

Abstract: A method of reactive ion etching a substrate 46 to form at least a first and a second etched feature (42, 44) is disclosed. The first etched feature (42) has a greater aspect ratio (depth:width) than the second etched feature (44). In a first etching stage the substrate (46) is etched so as to etch only said first feature (42) to a predetermined depth. Thereafter in a second etching stage, the substrate (46) is etched so as to etch both said first and said second features (42, 44) to a respective depth. A mask (40) may be applied to define apertures corresponding in shape to the features (42, 44). The region of the substrate (46) in which the second etched feature (44) is to be produced is selectively masked with a second maskant (50) during the first etching stage, The second maskant (50) is then removed prior to the second etching stage.

公开(公告)号：US20170088415A1

公开(公告)日：2017-03-30

申请号：US14872123

申请日：2015-09-30

Applicant: MEMS DRIVE, INC.

Inventor： ROMAN GUTIERREZ ,  TONY TANG ,  XIAOLEI LIU ,  GUIQIN WANG ,  MATTHEW NG

IPC: B81B7/00 ,  B81C1/00

CPC classification number: H01L21/76816 ,  B81B3/0045 ,  B81B7/0029 ,  B81B2203/0353 ,  B81C1/00674 ,  B81C1/00682 ,  B81C2201/0112 ,  B81C2201/0135 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/485 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181

Abstract: A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

公开(公告)号：US20160376147A1

公开(公告)日：2016-12-29

申请号：US15171002

申请日：2016-06-02

Applicant: Nivarox-FAR S.A.

Inventor： Alex Gandelhman ,  Andre Pin

IPC: B81C1/00 ,  G04D99/00

CPC classification number: B81C1/00619 ,  B81B2201/035 ,  B81B2203/0384 ,  B81C1/00103 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0138 ,  B81C2201/014 ,  B81C2201/0188 ,  B81C2201/0198 ,  G04B13/02 ,  G04B13/026 ,  G04B13/027 ,  G04D99/00

Abstract: The invention relates to a silicon-based component with at least one reduced contact surface which, formed from a method combining at least one oblique side wall etching step with a “Bosch” etch of vertical side walls, improves, in particular, the tribology of components formed by micromachining a silicon-based wafer.

Abstract translation: 本发明涉及具有至少一个还原接触表面的硅基组分，其由至少一个倾斜侧壁蚀刻步骤与垂直侧壁的“博世”蚀刻法组合的方法形成，特别是改进了摩擦学 通过微加工硅基晶片形成的部件。

公开(公告)号：US20160332864A1

公开(公告)日：2016-11-17

申请号：US15147197

申请日：2016-05-05

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Antti IIHOLA ,  Altti TORKKELI ,  Ville-Pekka RYTKÖNEN ,  Matti LIUKKU

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B3/0094 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C1/00357 ,  B81C2201/0112 ,  B81C2201/0132

Abstract: The present invention relates to a micromechanical device comprising a multi-layer micromechanical structure including only homogenous silicon material. The device layer comprises at least a rotor and at least two stators. At least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a first surface of the device layer and at least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a second surface of the device layer.

Abstract translation: 微机械装置技术领域本发明涉及包括仅包含均质硅材料的多层微机械结构的微机械装置。 装置层至少包括一个转子和至少两个定子。 转子和至少两个定子中的至少一些至少部分地凹陷到来自装置层的第一表面的至少两个不同的凹陷深度，并且至少一些转子和至少两个定子至少部分地凹入 与器件层的第二表面的至少两个不同的凹陷深度。

公开(公告)号：US20160280537A1

公开(公告)日：2016-09-29

申请号：US15178512

申请日：2016-06-09

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Michael D. HENRY ,  Andrew P. HOMYK ,  Axel SCHERER ,  Thomas A. TOMBRELLO ,  Sameer WALAVALKAR

IPC: B81C1/00 ,  B81B1/00 ,  B01J19/00

CPC classification number: B81C1/00111 ,  B01J19/0046 ,  B01J2219/00504 ,  B01J2219/00664 ,  B81B1/006 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0159 ,  G01N1/405 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3086 ,  Y10T436/25375

Abstract: Methods for fabricating of high aspect ratio probes and deforming micropillars and nanopillars are described. Use of polymers in deforming nanopillars and micropillars is also described.

公开(公告)号：US09156685B2

公开(公告)日：2015-10-13

申请号：US14664967

申请日：2015-03-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Hau Wu ,  Kuei-Sung Chang

IPC: H01L21/30 ,  H01L21/46 ,  B81C1/00 ,  H01L21/3065

CPC classification number: B81C1/00531 ,  B81B3/0018 ,  B81C1/00357 ,  B81C1/0038 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/0112 ,  H01L21/3065 ,  H01L41/332

Abstract: The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during over etching periods of DRIE processes.

Abstract translation: 本发明涉及一种装置及其制造方法，其中在悬挂体下方形成保护区域。 保护区域允许体硅体的深反应离子蚀刻以形成MEMS器件，而不会遇到由DRIE工艺的过蚀刻期间的氧化物的后向散射引起的对由硅造成的损坏的各种问题。

公开(公告)号：US09005548B2

公开(公告)日：2015-04-14

申请号：US12712097

申请日：2010-02-24

Applicant: Michael D. Henry ,  Andrew P. Homyk ,  Axel Scherer ,  Thomas A. Tombrello ,  Sameer Walavalkar

Inventor： Michael D. Henry ,  Andrew P. Homyk ,  Axel Scherer ,  Thomas A. Tombrello ,  Sameer Walavalkar

IPC: B01L3/00 ,  H01L21/308 ,  B81C1/00 ,  H01L21/3065

CPC classification number: B81C1/00111 ,  B01J19/0046 ,  B01J2219/00504 ,  B01J2219/00664 ,  B81B1/006 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0159 ,  G01N1/405 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3086 ,  Y10T436/25375

Abstract: Methods for fabricating of high aspect ratio probes and deforming micropillars and nanopillars are described. Use of polymers in deforming nanopillars and micropillars is also described.

Abstract translation: 描述了制造高纵横比探针和变形微柱和纳米柱的方法。 还描述了聚合物在变形纳米柱和微柱体中的使用。