公开(公告)号：US09975766B2

公开(公告)日：2018-05-22

申请号：US15312146

申请日：2015-05-05

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Yonggang Hu ,  Guoping Zhou

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C1/00 ,  B81C2201/0133 ,  B81C2201/0142

Abstract: An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is more precise, and the uniformity and the homogeneity of the formed support beam are better.

公开(公告)号：US09944517B2

公开(公告)日：2018-04-17

申请号：US14883745

申请日：2015-10-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. Luce ,  Anthony K. Stamper

IPC: H01H11/00 ,  H01H49/00 ,  B81C1/00 ,  H01H59/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: An approach includes a method of fabricating a switch. The approach includes forming a first fixed electrode and a second fixed electrode, forming a first cantilevered electrode aligned vertically over the first fixed electrode, forming a second cantilevered electrode aligned vertically over the second fixed electrode, and which has an end that overlaps and is operable to directly contact an end of the first cantilevered electrode upon an application of a voltage to at least one of the first fixed electrode and the second fixed electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.

公开(公告)号：US20180093884A1

公开(公告)日：2018-04-05

申请号：US15809066

申请日：2017-11-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H59/00 ,  H01H11/00 ,  H01H49/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode, forming a second cantilevered electrode over an electrode and operable to contact the first cantilevered electrode upon an application of a voltage to the electrode, and forming an arm on the first cantilevered electrode with an extending protrusion extending upward from an upper surface of the arm.

公开(公告)号：US09932224B2

公开(公告)日：2018-04-03

申请号：US14973319

申请日：2015-12-17

Applicant: Globalfoundries Singapore Pte. Ltd.

Inventor： Siddharth Chakravarty ,  Rakesh Kumar ,  Pradeep Yelehanka

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00293 ,  B81B7/0074 ,  B81B2203/0315 ,  B81C2201/0105 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0136

Abstract: Semiconductor devices with enclosed cavities and methods for fabricating semiconductor devices with enclosed cavities are provided. In an embodiment, a method for fabricating a semiconductor device with a cavity includes forming a sacrificial structure in and/or over a substrate. The method includes depositing a permeable layer over the sacrificial structure and the substrate. Further, the method includes etching the sacrificial structure through the permeable layer to form the cavity bounded by the substrate and the permeable layer.

公开(公告)号：US20180016137A1

公开(公告)日：2018-01-18

申请号：US15717187

申请日：2017-09-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H49/00 ,  H01H59/00 ,  H01H11/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode over a first fixed electrode, forming a second cantilevered electrode with an end that overlaps the first cantilevered electrode, forming a third cantilevered electrode operable to directly contact the first cantilevered electrode upon an application of a voltage to a second fixed electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.

公开(公告)号：US20170339494A1

公开(公告)日：2017-11-23

申请号：US15365590

申请日：2016-11-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Matteo PERLETTI ,  Igor VARISCO ,  Luca LAMAGNA ,  Silvia ADORNO ,  Gabriele GATTERE ,  Carlo VALZASINA ,  Sebastiano CONTI

IPC: H04R19/00 ,  B81B3/00 ,  G01H11/06 ,  B81C1/00

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00158 ,  B81C2201/0109 ,  B81C2201/0111 ,  B81C2201/0133 ,  G01H11/06 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/023

Abstract: A MEMS acoustic transducer provided with: a substrate of semiconductor material, having a back surface and a front surface opposite with respect to a vertical direction; a first cavity formed within the substrate, which extends from the back surface to the front surface; a membrane which is arranged at the upper surface, suspended above the first cavity and anchored along a perimeter thereof to the substrate; and a combfingered electrode arrangement including a number of mobile electrodes coupled to the membrane and a number of fixed electrodes coupled to the substrate and facing respective mobile electrodes for forming a sensing capacitor, wherein a deformation of the membrane as a result of incident acoustic pressure waves causes a capacitive variation of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane and extends parallel thereto.

公开(公告)号：US20170336437A1

公开(公告)日：2017-11-23

申请号：US15659963

申请日：2017-07-26

Applicant: Chinese Academy of Sciences Institute of Geology and Geophysics

Inventor： Lianzhong YU ,  Chen Sun ,  Leiyang Yi

IPC: G01P15/125 ,  G01P15/08

CPC classification number: B81C3/001 ,  B81B2201/0235 ,  B81B2203/051 ,  B81C1/00134 ,  B81C1/0019 ,  B81C1/00269 ,  B81C1/00357 ,  B81C1/00396 ,  B81C1/00531 ,  B81C1/00539 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  B81C2201/019 ,  G01P15/125 ,  G01P2015/0814

Abstract: A process for fabricating a symmetrical MEMS accelerometer. A pair of half parts is fabricated by, for each half part: (i) forming a plurality of resilient beams, first connecting parts, second connecting parts, and a plurality of comb structures, by etching a plurality of holes on a bottom surface of a first silicon wafer; (ii) etching a plurality of hollowed parts on a top surface of a second silicon wafer; (iii) forming a silicon dioxide layer on the top and bottom surface of the second silicon wafer; (iv) bonding the bottom surface of the first silicon wafer with the top surface of the second silicon wafer; (v) depositing a layer of silicon nitride on the bottom surface of the second silicon wafer, and removing parts of the silicon nitride layer and silicon dioxide layer on the bottom surface of the second silicon wafer; (vii) deep etching the exposed parts of the bottom surface of the second silicon wafer to the silicon dioxide layer located on the top surface of the second silicon wafer, and reducing the thickness of the first silicon wafer; and (viii) removing the silicon nitride layer, and etching the silicon dioxide to form the mass. The two half parts are then bonded along their bottom surface. The device is deep etched to form a movable accelerometer. A bottom cap is fabricated by hollowing out the corresponding area, and depositing metal as electrodes. The accelerometer is bonded with the bottom cap. Metal is deposited on the first silicon wafer to form electrodes.

公开(公告)号：US09780167B2

公开(公告)日：2017-10-03

申请号：US14908930

申请日：2014-07-14

Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung Han Yoon ,  Se Yeong Lee

IPC: H01L29/06 ,  B81C1/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3205 ,  H01L29/16

CPC classification number: H01L29/0676 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02118 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32051 ,  H01L29/16

Abstract: Provided is a method for manufacturing a silicon nanowire array comprising the steps of: positioning plastic particles separated apart from one another in a uniform random pattern on a silicon substrate; forming a catalyst layer between the plastic particles; removing the plastic particles; vertically etching portions of the silicon substrate that contact the catalyst layer; and removing the catalyst layer. The present invention provides a simple and cost-effective process, enables mass-production through large surface area processing, enables the manufacture of nanowire even at a site having limited resources, and enables the structures of nanowire to be individually controlled.

公开(公告)号：US20170203954A1

公开(公告)日：2017-07-20

申请号：US15001067

申请日：2016-01-19

Applicant: Rosemount Aerospace Inc.

Inventor： Weibin Zhang ,  David P. Potasek

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/0132 ,  B81C2201/0133 ,  G01L9/0048 ,  G01L19/0618

Abstract: A method for producing a silicon based MEMS pressure sensor includes forming a cavity in a first (100) surface of a silicon wafer with first and second parallel (100) surfaces wherein the angle between the walls of the first cavity and the first (100) surface where they intersect the first (100) surface are greater than 90 degrees and the remaining material between the bottom of the cavity and the second parallel (100) surface comprises a flexible diaphragm. The method also includes forming a backing wafer, having a through hole, and bonding the silicon wafer to the backing wafer such that the hole in the backing wafer matches up with the cavity in the second side of the (100) silicon wafer. A dielectric layer is formed on the second side of the (100) silicon wafer and a sensing element is formed on the dielectric layer to detect pressure induced deflection of the silicon diaphragm.

公开(公告)号：US20170081176A1

公开(公告)日：2017-03-23

申请号：US14981461

申请日：2015-12-28

Applicant: HANGZHOU SILAN MICROELECTRONICS CO., LTD. ,  HANGZHOU SILAN INTEGRATED CIRCUIT CO., LTD

Inventor： Feng JI ,  Yongxiang WEN ,  Chen LIU ,  Hao ZHOU

IPC: B81B7/00 ,  H01L23/26 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81B2203/033 ,  B81B2203/0384 ,  B81C1/00285 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0154 ,  B81C2201/0198 ,  B81C2203/0109 ,  H01L23/26

Abstract: The invention provides a MEMS device, semiconductor device, and method for manufacturing the same. The MEMS device comprises an enclosed cavity, the cavity having an inner wall extending in a first plane, the inner wall including a film deposition region for depositing a getter film, wherein one or more grooves are formed in the film deposition region, the angle between the sidewalls of the grooves and the first plane is more than 0° and less than 180°, and the getter film overlays the sidewall of the grooves. The invention can form the getter film in a smaller incident flux angle with a common sputtering, evaporation apparatus, that is, form the porous, high roughness getter.