公开(公告)号：US08513359B2

公开(公告)日：2013-08-20

申请号：US13615203

申请日：2012-09-13

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: C08L71/02

CPC classification number: G03F7/40 ,  B32B3/10 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08G81/02 ,  G03F7/12

Abstract: Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

公开(公告)号：US20130210226A1

公开(公告)日：2013-08-15

申请号：US13592668

申请日：2012-08-23

Applicant: Yuriko SEINO

Inventor： Yuriko SEINO

IPC: H01L21/28

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/31144 ,  H01L21/76816

Abstract: According to one embodiment, a pattern formation method comprises forming a hard mask material on a processed film on a wiring, forming a guide layer on the hard mask material, forming a tetragonal opening in the guide layer, coating the opening with a block polymer, heating the block polymer to form a micro phase separation structure film in which first polymer parts and second polymer parts parallel to the wiring are alternately arranged, removing the second polymer part while leaving the first polymer part, processing the hard mask material with the guide layer and the first polymer part as a mask to form a first hole pattern in the hard mask material, and processing the processed film with the hard mask material as a mask to form a second hole pattern corresponding to the first hole pattern in the processed film.

Abstract translation: 根据一个实施例，图案形成方法包括在布线上的加工膜上形成硬掩模材料，在硬掩模材料上形成引导层，在引导层中形成四边形开口，用嵌段聚合物涂覆开口， 加热嵌段聚合物以形成其中与布线平行的第一聚合物部分和第二聚合物部分交替布置的微相分离结构膜，在离开第一聚合物部分的同时除去第二聚合物部分，用引导层处理硬掩模材料 和第一聚合物部分作为掩模，以在硬掩模材料中形成第一孔图案，并且用硬掩模材料作为掩模处理处理的膜以形成对应于处理膜中的第一孔图案的第二孔图案。

公开(公告)号：US08486613B2

公开(公告)日：2013-07-16

申请号：US12636202

申请日：2009-12-11

Applicant: Sang-Ouk Kim ,  Seong-Jun Jeong ,  Su-Mi Lee ,  Bong-Hoon Kim ,  Ji-Eun Kim ,  Jae-Ho You ,  Moon-Gyu Lee ,  Seung-Ho Nam

Inventor： Sang-Ouk Kim ,  Seong-Jun Jeong ,  Su-Mi Lee ,  Bong-Hoon Kim ,  Ji-Eun Kim ,  Jae-Ho You ,  Moon-Gyu Lee ,  Seung-Ho Nam

IPC: G03F7/26

CPC classification number: B81C1/00031 ,  B81C2201/0149

Abstract: According to an example embodiment of the present invention, a photoresist pattern is formed on a base substrate including a neutral layer. A sacrifice structure including a first sacrifice block and a second sacrifice block is formed on the base substrate having the photoresist pattern, and the sacrifice structure is formed from a first thin film including a first block copolymer. Thus, a chemical pattern is formed to form a nano-structure. Therefore, the nano-structure may be easily formed on a substrate having a large size by using a block copolymer, and productivity and manufacturing reliability may be improved.

Abstract translation: 根据本发明的示例性实施例，在包括中性层的基底基板上形成光致抗蚀剂图案。 在具有光致抗蚀剂图案的基底上形成包括第一牺牲块和第二牺牲块的牺牲结构，牺牲结构由包括第一嵌段共聚物的第一薄膜形成。 因此，形成化学图案以形成纳米结构。 因此，可以通过使用嵌段共聚物容易地在具有大尺寸的基板上形成纳米结构，并且可以提高生产率和制造可靠性。

公开(公告)号：US08486511B2

公开(公告)日：2013-07-16

申请号：US13430177

申请日：2012-03-26

Applicant: Charles T. Black ,  Timothy J. Dalton ,  Bruce B. Doris ,  Carl J. Radens

Inventor： Charles T. Black ,  Timothy J. Dalton ,  Bruce B. Doris ,  Carl J. Radens

IPC: B32B3/00

CPC classification number: H01L21/0338 ,  B81B2203/0369 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/0337 ,  H01L51/0017 ,  Y10S977/882 ,  Y10S977/887 ,  Y10S977/888 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/24736 ,  Y10T428/24802

Abstract: In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ⅓ of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order.

Abstract translation: 在一个实施例中，包括大的六边形瓦片被分成三组，每组包含彼此分离的所有六边形瓦片的1/3。 每个组中的六边形瓦片的开口形成在模板层中，并且在每个开口内施加并组合一组自组装嵌段共聚物。 该过程重复三次以包含所有三组，导致在大面积上延伸的自对准图案。 在另一个实施例中，大面积被分成两个不重叠和互补组的矩形瓦片。 每个矩形区域的宽度小于自组装嵌段共聚物的顺序范围。 在每组中以顺序的方式形成自组装的自对准线和空间结构，使得在超过有序范围的大面积上形成线和空间图案。

公开(公告)号：US08404124B2

公开(公告)日：2013-03-26

申请号：US11761589

申请日：2007-06-12

Applicant: Dan B. Millward ,  Donald Westmoreland ,  Gurtej Sandhu

Inventor： Dan B. Millward ,  Donald Westmoreland ,  Gurtej Sandhu

IPC: B44C1/22 ,  B82B3/00 ,  H01L21/302 ,  B82Y40/00

CPC classification number: H01J37/02 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  G03F7/0002 ,  G03F7/265 ,  Y10T428/24 ,  Y10T428/24149 ,  Y10T428/24174 ,  Y10T428/2438

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

公开(公告)号：US20130059438A1

公开(公告)日：2013-03-07

申请号：US13293979

申请日：2011-11-10

Applicant: JUNQING ZHOU ,  XIAOYING MENG ,  HAIYANG ZHANG

Inventor： JUNQING ZHOU ,  XIAOYING MENG ,  HAIYANG ZHANG

IPC: H01L21/306 ,  B44C1/22 ,  B29C59/02

CPC classification number: H01L21/0332 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/165 ,  H01L21/0337 ,  H01L21/0338

Abstract: A pattern formation method, mask pattern formation method and a method for manufacturing semiconductor devices are provided in this disclosure, which are directed to the field of semiconductor processes. The pattern formation method comprises: providing a substrate; forming a polymer thin film containing a block copolymer on the substrate; forming a first pattern through imprinting the polymer thin film with a stamp; forming domains composed of different copolymer components through directed self assembly of the copolymer in the first pattern; selectively removing the domains composed of copolymer components to form a second pattern. In the embodiments of the present invention, finer pitch patterns can be obtained through combining the imprinting and DSA process without exposure, which as compared to the prior art methods has the advantage of simplicity. Furthermore, stamps used in imprinting may have relative larger pitches, facilitating and simplifying the manufacture and alignment of the stamps.

Abstract translation: 在本公开中提供了图案形成方法，掩模图案形成方法和半导体器件的制造方法，其涉及半导体工艺领域。 图案形成方法包括：提供基板; 在基材上形成含有嵌段共聚物的聚合物薄膜; 通过用印模压印聚合物薄膜来形成第一图案; 通过在第一图案中共聚物的定向自组装形成由不同共聚物组分组成的畴; 选择性地除去由共聚物组分组成的畴以形成第二图案。 在本发明的实施例中，可以通过组合压印和DSA处理而不曝光来获得更细的间距图案，与现有技术的方法相比，其简单性优点。 此外，在印记中使用的邮票可以具有相对更大的间距，便于和简化邮票的制造和对准。

公开(公告)号：US20130004707A1

公开(公告)日：2013-01-03

申请号：US13615203

申请日：2012-09-13

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: B05D7/22 ,  B32B3/10

CPC classification number: G03F7/40 ,  B32B3/10 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08G81/02 ,  G03F7/12

Abstract: Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract translation: 用于制造无规接枝PS-r-PEO共聚物的方法及其在制备亚光刻纳米级元素阵列的元件中作为中性润湿层的用途，包括使用自组装嵌段共聚物的开口和线性微通道，以及由这些方法形成的膜和器件 被提供。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

公开(公告)号：US20120319329A1

公开(公告)日：2012-12-20

申请号：US13452441

申请日：2012-04-20

Applicant: Xi Chen

Inventor： Xi Chen

IPC: B29C53/02 ,  B29C59/02

CPC classification number: B29C53/02 ,  B81C1/00031 ,  B81C2201/0149

Abstract: Self-assembled buckling patterns of thin films on compliant substrates can be used in micro-fabrication. However, most previous work has been limited to planar substrates, and buckling of films on curved substrates has not been widely explored. With the constraining effect from various types of substrate curvature, numerous new types of buckling morphologies can be derived. The morphologies not only enable true three-dimensional (3D) fabrication of microstructures and microdevices, but also can have important implications for the morphogenesis of quite a few natural and biological systems.

Abstract translation: 柔性衬底上的薄膜的自组装弯曲图案可用于微加工。 然而，大多数以前的工作已经局限于平面基板，并且弯曲基板上的膜的屈曲尚未得到广泛的探索。 通过各种基体曲率的约束效应，可以得出许多新型的屈曲形态。 形态不仅可以实现微观结构和微型设备的真正三维（3D）制作，而且可以对相当多的自然和生物系统的形态发生具有重要意义。

公开(公告)号：US08299455B2

公开(公告)日：2012-10-30

申请号：US11872291

申请日：2007-10-15

Applicant: Bruce B. Doris ,  Carl J. Radens ,  Anthony K. Stamper ,  Jay W. Strane

Inventor： Bruce B. Doris ,  Carl J. Radens ,  Anthony K. Stamper ,  Jay W. Strane

IPC: H01L29/06

CPC classification number: H01L21/28518 ,  B81B2207/07 ,  B81C1/00095 ,  B81C2201/0149 ,  H01L21/3086 ,  H01L21/76886 ,  H01L23/485 ,  H01L23/5226 ,  H01L29/41766 ,  H01L29/665 ,  H01L29/66636 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Self-assembled polymer technology is used to form at least one ordered nanosized pattern within material that is present in a conductive contact region of a semiconductor structure. The material having the ordered, nanosized pattern is a conductive material of an interconnect structure or semiconductor source and drain diffusion regions of a field effect transistor. The presence of the ordered, nanosized pattern material within the contact region increases the overall area (i.e., interface area) for subsequent contact formation which, in turn, reduces the contact resistance of the structure. The reduction in contact resistance in turn improves the flow of current through the structure. In addition to the above, the inventive methods and structures do not affect the junction capacitance of the structure since the junction area remains unchanged.

Abstract translation: 自组装聚合物技术用于在存在于半导体结构的导电接触区域中的材料内形成至少一个有序的纳米尺度图案。 具有有序纳米尺寸图案的材料是场效应晶体管的互连结构或半导体源和漏极扩散区的导电材料。 在接触区域内有序的纳米尺寸图案材料的存在增加了用于随后的接触形成的总面积（即界面面积），这又降低了结构的接触电阻。 接触电阻的降低又改善了通过结构的电流的流动。 除了上述之外，本发明的方法和结构不影响结构的结电容，因为结面积保持不变。

公开(公告)号：US08287749B2

公开(公告)日：2012-10-16

申请号：US12644208

申请日：2009-12-22

Applicant: Hirokazu Hasegawa ,  Mikihito Takenaka ,  Hiroshi Yoshida ,  Yasuhiko Tada

Inventor： Hirokazu Hasegawa ,  Mikihito Takenaka ,  Hiroshi Yoshida ,  Yasuhiko Tada

IPC: B81C1/00 ,  B82Y40/00

CPC classification number: G03F7/0002 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/24802

Abstract: The present invention provides a method of manufacturing a high-molecular thin film having a fine structure from a block-copolymer compound containing a block copolymer A as a main constituent composed of at least a block chain A1 and a block chain A2, and a block copolymer B as an accessory constituent composed of a block chain B1 miscible with a polymeric phase P1 mainly composed of the block chain A1 and a block chain B2 miscible with a polymeric phase P2 mainly composed of the block chain A2, and a substrate having a surface on which the block-copolymer compound is applied and on which a pattern member formed of a second material is discretely arranged to a surface part formed of a first material.

Abstract translation: 本发明提供一种制造具有微结构的高分子薄膜的方法，所述高分子薄膜是由嵌段共聚物化合物制成的，所述嵌段共聚物含有嵌段共聚物A作为至少由块链A1和嵌段链A2构成的主要成分，以及嵌段 共聚物B作为由与主要由嵌段链A1组成的聚合物相P1混合的嵌段链B1和与主要由嵌段链A2构成的聚合物相P2混合的嵌段链B2组成的辅助成分，以及具有表面 其上施加了嵌段共聚物化合物，并且其上由第二材料形成的图案构件离散地布置在由第一材料形成的表面部分上。