公开(公告)号：US12044585B1

公开(公告)日：2024-07-23

申请号：US17320719

申请日：2021-05-14

Applicant: United States of America as represented by the Administrator of NASA

Inventor： Robert S. Okojie

IPC: G01L19/00 ,  B81B7/00 ,  B81C1/00 ,  G01K7/16 ,  G01L9/06 ,  H01L29/66

CPC classification number: G01L19/0092 ,  B81B7/0035 ,  B81C1/00158 ,  G01K7/16 ,  G01L9/06 ,  H01L29/66053 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81C2201/0132 ,  B81C2201/0156 ,  B81C2201/0197

Abstract: An integration of silicon carbide (SiC) pressure sensor and a temperature sensor on a single SiC substrate to facilitate the simultaneous measurement of pressure and temperature at temperature, and a method of fabricating the same.

公开(公告)号：US11851320B2

公开(公告)日：2023-12-26

申请号：US16609968

申请日：2018-05-01

Applicant: THE JOHNS HOPKINS UNIVERSITY

Inventor： Gi-Dong Sim ,  Jessica Krogstad ,  Timothy P. Weihs ,  Kevin J. Hemker ,  Gianna Valentino

IPC: B81B3/00 ,  B81C1/00 ,  C23C14/18 ,  C23C14/58 ,  C25D3/56 ,  C25D5/50

CPC classification number: B81B3/0075 ,  B81C1/00674 ,  C23C14/18 ,  C23C14/5806 ,  C25D3/562 ,  C25D5/50 ,  B81B2203/0118 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0181 ,  B81C2201/0197

Abstract: The present invention is directed to the synthesis of metallic nickel-molybdenum-tungsten films and coatings with direct current sputter deposition, which results in fully-dense crystallographically textured films that are filled with nano-scale faults and twins. The as-deposited films exhibit linear-elastic mechanical behavior and tensile strengths above 2.5 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultra-high strength is attributed to a combination of solid solution strengthening and the presence of the dense nano-scale faults and twins. These films also possess excellent thermal and mechanical stability, high density, low CTE, and electrical properties that are attractive for next generation metal MEMS applications. Deposited as coatings these films provide protection against friction and wear. The as-deposited films can also be heat treated to modify the internal microstructure and attendant mechanical properties in a way that provides a desired balance of strength and toughness.

公开(公告)号：US11701478B2

公开(公告)日：2023-07-18

申请号：US15765889

申请日：2016-10-06

Applicant: BOEHRINGER INGELHEIM INTERNATIONAL GMBH

Inventor： Daniel Frache

IPC: A61M11/00 ,  B05B11/00 ,  A61M15/00 ,  B81C1/00 ,  B05B13/04 ,  B05B1/16 ,  B05B1/20 ,  B05B1/04 ,  B01J2/06 ,  B05D7/00 ,  B01J2/04 ,  B05D7/24 ,  C09D183/08 ,  C03C17/30 ,  B05B11/10 ,  B05D5/08

CPC classification number: A61M11/006 ,  A61M15/009 ,  A61M15/0065 ,  A61M15/0068 ,  B01J2/04 ,  B01J2/06 ,  B05B1/042 ,  B05B1/16 ,  B05B1/202 ,  B05B11/0032 ,  B05B13/0436 ,  B05D7/00 ,  B05D7/24 ,  B81C1/00 ,  B81C1/00015 ,  B81C1/0038 ,  B81C1/0065 ,  B81C1/00206 ,  B81C1/00341 ,  B81C1/00349 ,  B81C1/00642 ,  B81C1/00682 ,  C03C17/30 ,  C09D183/08 ,  A61M2205/0238 ,  A61M2205/70 ,  A61M2205/7545 ,  A61M2205/7563 ,  A61M2207/00 ,  B05B11/1091 ,  B05D5/08 ,  B05D2518/12 ,  B81C2201/01 ,  B81C2201/0161 ,  B81C2201/0174 ,  B81C2201/0197

Abstract: The present disclosure provides a method for the surface modification of microstructured components having a polar surface, in particular for high-pressure applications. According to the method, a microstructured component is contacted, in particular treated, with a modification reagent, wherein the surface properties of the component are modified by chemical and/or physical interaction of the component surface and of the modification reagent.

公开(公告)号：US09758364B2

公开(公告)日：2017-09-12

申请号：US15162027

申请日：2016-05-23

Applicant: Honeywell International Inc.

Inventor： Gordon A. Shaw ,  Daniel Baseman ,  Chris Finn ,  Jim G. Hunter

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/013 ,  B81C2201/0197

Abstract: Microstructure plating systems and methods are described herein. One method includes depositing a plating-resistant material between a microstructure and a bonding layer, wherein the microstructure comprises a plating process base material and immersing the microstructure in a plating solution.

公开(公告)号：US09611135B1

公开(公告)日：2017-04-04

申请号：US14928702

申请日：2015-10-30

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein

IPC: H01L29/84 ,  H04R19/04 ,  B81B3/00 ,  H02N1/00 ,  B81C1/00 ,  H04R19/00

CPC classification number: B81B3/0021 ,  B81B3/0059 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C1/00158 ,  B81C2201/0197 ,  H01L29/84 ,  H02N1/008 ,  H02N2/02 ,  H04R1/04 ,  H04R1/06 ,  H04R19/005 ,  H04R19/04 ,  H04R31/003 ,  H04R2201/003 ,  H04R2207/021 ,  H04R2231/003 ,  H04R2410/03

Abstract: According to an embodiment, a MEMS device includes a deflectable membrane including a first plurality of electrostatic comb fingers, a first anchor structure including a second plurality of electrostatic comb fingers interdigitated with a first subset of the first plurality of electrostatic comb fingers, and a second anchor structure including a third plurality of electrostatic comb fingers interdigitated with a second subset of the first plurality of electrostatic comb fingers. The second plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a first direction and the third plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a second direction, where the first direction is different from the second direction.

公开(公告)号：US09533877B2

公开(公告)日：2017-01-03

申请号：US15098353

申请日：2016-04-14

Applicant: Innovative Micro Technology

Inventor： Benedikt Zeyen

IPC: H01L33/18 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0067 ,  B81B2201/0264 ,  B81B2201/047 ,  B81B2207/115 ,  B81C1/00317 ,  B81C3/001 ,  B81C2201/013 ,  B81C2201/0197 ,  B81C2203/031 ,  H01L24/00 ,  H04R19/02

Abstract: A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.

Abstract translation: 具有图案化电介质阻挡层和可氧化金属层的第一富离子电介质基片阳极结合到第二富离子电介质基片上。 为了结合基板，可氧化的金属层被氧化。 电介质阻挡层可以抑制这些离子迁移到粘结线，否则可能会损害粘结强度。 因此，当接合两个基板时，在晶片之间保持牢固的结合。

公开(公告)号：US09458010B1

公开(公告)日：2016-10-04

申请号：US14805924

申请日：2015-07-22

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Ruben B. Montez ,  Robert F. Steimle

IPC: H01L21/36 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00039 ,  B81B2203/0307 ,  B81C2201/0197

Abstract: A method of making a semiconductor device forms anchors for one or more layers of material. The method includes depositing a first layer of material on a substrate, applying a mask over the first layer of material to mask nanoparticle-sized areas of the first material, removing portions of the first layer of material to form a first set of recesses around the nanoparticle-sized areas of the first material, depositing a second layer of material in the recesses and over the nanoparticle-sized areas so that a second set of recesses is formed in a top surface of the second layer of material, and forming a component of the semiconductor device over the second layer of material. Material of a bottom surface of the component is included in the second set of recesses.

Abstract translation: 制造半导体器件的方法形成用于一层或多层材料的锚固件。 该方法包括在衬底上沉积第一层材料，在第一材料层上施加掩模以掩盖第一材料的纳米颗粒尺寸的区域，去除第一材料层的部分以形成围绕第一材料的第一组凹陷 所述第一材料的纳米颗粒尺寸的区域，在所述凹部中并在所述纳米颗粒尺寸区域上沉积第二层材料，使得在所述第二材料层的顶表面中形成第二组凹陷，并形成所述第二层材料的组分 半导体器件在第二层材料上。 部件的底面的材料被包括在第二组凹部中。

公开(公告)号：US09422156B2

公开(公告)日：2016-08-23

申请号：US14752718

申请日：2015-06-26

Applicant: InvenSense, Inc.

Inventor： Peter Smeys

IPC: B81C1/00 ,  B81B7/00 ,  B81B7/02

CPC classification number: B81C1/00238 ,  B81B7/02 ,  B81C1/00246 ,  B81C2201/0197 ,  B81C2203/0792

Abstract: A method of providing a CMOS-MEMS structure is disclosed. The method comprises patterning a first top metal on a MEMS actuator substrate and a second top metal on a CMOS substrate. Each of the MEMS actuator substrate and the CMOS substrate include an oxide layer thereon. The method includes etching each of the oxide layers on the MEMS actuator substrate and the base substrate, utilizing a first bonding step to bond the first patterned top metal of the MEMS actuator substrate to the second patterned top metal of the base substrate. Finally the method includes etching an actuator layer into the MEMS actuator substrate and utilizing a second bonding step to bond the MEMS actuator substrate to a MEMS handle substrate.

Abstract translation: 公开了一种提供CMOS-MEMS结构的方法。 该方法包括将MEMS致动器基板上的第一顶部金属和CMOS基板上的第二顶部金属图案化。 MEMS致动器基板和CMOS基板中的每一个在其上包括氧化物层。 该方法包括利用第一结合步骤将MEMS致动器基板的第一图案化顶部金属与基底基板的第二图案化顶部金属结合来蚀刻MEMS致动器基板和基底基板上的每个氧化物层。 最后，该方法包括将致动器层蚀刻到MEMS致动器基板中，并利用第二结合步骤将MEMS致动器基板结合到MEMS手柄基板。

公开(公告)号：US20160230304A1

公开(公告)日：2016-08-11

申请号：US15022532

申请日：2014-09-08

Applicant: GRIFFITH UNIVERSITY

Inventor： Francesca IACOPI ,  Mohsin AHMED ,  Benjamin Vaughan CUNNING

IPC: C30B1/02 ,  B81C1/00 ,  C01B31/04 ,  H01L21/02 ,  C30B1/10 ,  C30B29/02

CPC classification number: C30B1/026 ,  B81C1/0038 ,  B81C2201/0197 ,  C01B32/184 ,  C01B32/188 ,  C30B1/10 ,  C30B29/02 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02614

Abstract: A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.

Abstract translation: 一种用于形成石墨烯的方法包括：将至少第一和第二金属沉积到碳化硅（SiC）的表面上，并且在导致第一金属与硅的硅反应的条件下加热SiC和第一和第二金属 碳化硅以形成碳和至少一种稳定的硅化物。 碳在稳定硅化物和第二金属中的相应溶解度足够低，使得由硅化物反应产生的碳在SiC上形成石墨烯层。

公开(公告)号：US20160154019A1

公开(公告)日：2016-06-02

申请号：US14518621

申请日：2014-10-20

Applicant: InSighTech, LLC

Inventor： Biao Zhang ,  Tao Ju

IPC: G01P15/105 ,  G01R33/09

CPC classification number: G01P15/105 ,  B81B5/00 ,  B81C1/00357 ,  B81C3/001 ,  B81C2201/0197 ,  B81C2203/038 ,  G01C19/56 ,  G01C19/5712 ,  G01C19/5776 ,  G01P15/125 ,  G01R33/091 ,  G01R33/093 ,  G01R33/098

Abstract: A MEMS gyroscope is disclosed herein, wherein the MEMS gyroscope comprises a movable portion capable of moving in response to angular velocity, a conducting wire attached to the movable portion for generating magnetic field, and a spintronic device for measuring the magnetic field. The conducting wire is disposed such that the current it carries is substantially perpendicular to the sensing direction of the sensing mode of the proof-mass.

Abstract translation: 本文公开了一种MEMS陀螺仪，其中MEMS陀螺仪包括能够响应于角速度移动的可移动部分，连接到用于产生磁场的可移动部分的导线和用于测量磁场的自旋电子装置。 导线被布置成使得其承载的电流基本上垂直于检验质量的感测模式的感测方向。