公开(公告)号：US11031205B1

公开(公告)日：2021-06-08

申请号：US16781569

申请日：2020-02-04

Applicant: GEORG-AUGUST-UNIVERSITÄT GÖTTINGEN STIFTUNG ÖFFENTLICHEN RECHTS, UNIVERSITÄTSMEDIZIN

Inventor： Hans Hofsäss ,  Felipe Lipp Bregolin ,  Dimitar Yordanov

IPC: H01J37/08 ,  H01J27/26

Abstract: A device for generating negative ions comprises: a) an ionizer (14) including a heatable ionizer surface; b) a heater (60) for heating said ionizer whereby positive ions (30) are generated at said ionizer surface (14e); c) a target (34) including a material for generating negative ions when said positive ions impigne on said material; wherein d) said ionizer is arranged opposite the target; e) said target is electrically negatively biased in respect to said ionizer; f) said ionizer comprises an aperture (22) through which said generated negative ions are extracted from said target to generate a beam (50) of negative ions; and wherein g) said ionizer surface (14e) is planar.

公开(公告)号：US11011345B2

公开(公告)日：2021-05-18

申请号：US16786482

申请日：2020-02-10

Applicant: Hitachi High-Tech Corporation

Inventor： Takumi Hatakeyama ,  Naoya Ishigaki

IPC: H01J37/18 ,  H01J37/28 ,  H01J37/08 ,  H01J37/244

Abstract: The present disclosure relates to a charged particle beam device intended to appropriately measure the amount of foreign substances in a vacuum chamber. As one aspect for achieving the above object, proposed is a charged particle beam device including a charged particle beam column (9) configured to irradiate a sample with a charged particle beam, vacuum chambers (1, 2) configured to create a vacuum around the sample, a plurality of electrodes (12) arranged in the vacuum chambers, and a capacitance measuring device (13) for measuring the capacitance between the plurality of electrodes.

公开(公告)号：US11004656B2

公开(公告)日：2021-05-11

申请号：US14882297

申请日：2015-10-13

Applicant: Gatan, Inc.

Inventor： John Andrew Hunt ,  Steven Thomas Coyle ,  Michael Patrick Hassel-Shearer ,  Thijs C Hosman

IPC: H01J37/304 ,  H01J37/30 ,  H01J37/08 ,  H01J37/24 ,  H01J37/305 ,  G01N1/44 ,  H01J37/317

Abstract: Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder.

公开(公告)号：US20210118642A1

公开(公告)日：2021-04-22

申请号：US17072691

申请日：2020-10-16

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Yasuhiko SUGIYAMA ,  Naoko HIROSE

IPC: H01J37/12 ,  H01J37/147 ,  H01J37/08 ,  H01J37/153 ,  H01J37/28

Abstract: The focused ion beam apparatus includes: an ion source configured to generate ions; a first electrostatic lens configured to accelerate and focus the ions to form an ion beam; a beam booster electrode configured to accelerate the ion beam to a higher level; one or a plurality of electrodes, which are placed in the beam booster electrode, and are configured to electrostatically deflect the ion beam; a second electrostatic lens, which is provided between the one or plurality of electrodes and a sample table, and is configured to focus the ion beam applied with a voltage; and a processing unit configured to obtain a measurement condition, and set at least one of voltages to be applied to the one or plurality of electrodes or a voltage to be applied to each of the first electrostatic lens and the second electrostatic lens, based on the obtained measurement condition.

公开(公告)号：US20210090841A1

公开(公告)日：2021-03-25

申请号：US16953509

申请日：2020-11-20

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Richard Rzeszut ,  Wendy Colby

IPC: H01J37/08 ,  H01J37/317

Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.

公开(公告)号：US10943767B1

公开(公告)日：2021-03-09

申请号：US16738021

申请日：2020-01-09

Applicant: Applied Materials, Inc.

Inventor： Keith E. Kowal

IPC: H01J37/32 ,  H05H7/18 ,  H05H7/22 ,  G06F1/04 ,  H01J37/08 ,  H01J27/02 ,  H03L7/081 ,  H03M1/12 ,  H05H9/04

Abstract: A system for measuring and controlling the phase of an incoming analog waveform is disclosed. The system comprises an analog to digital converter to convert the incoming analog waveform to a digital representation. The system also includes a clock delay generator, which allows a programmable amount of delay to be introduced into the sample clock for the ADC. The system further comprises a controller to manipulate the delay used by the clock delay generator and store the outputs from the ADC. The controller can then use the digitized representation to determine the frequency of the incoming analog waveform, its phase drift and its phase relative to a master clock. The controller can then modify the output of a RF generator in response to these determinations.

公开(公告)号：US20210066020A1

公开(公告)日：2021-03-04

申请号：US16961759

申请日：2018-02-28

Applicant: Hitachi High-Tech Corporation

Inventor： Hitoshi KAMOSHIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Toru IWAYA

IPC: H01J37/08 ,  H01J37/305 ,  H01J37/20 ,  H01J37/244 ,  H01J37/147

Abstract: By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.

公开(公告)号：US10923311B1

公开(公告)日：2021-02-16

申请号：US16679342

申请日：2019-11-11

Applicant: XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.

Inventor： Keewoung Choi ,  Jong-Moo Choi ,  Heung-Woo Park ,  Hasung Lee

IPC: H01J37/08 ,  H01J37/317

Abstract: An apparatus for ion implantation is disclosed. The apparatus comprising an arc chamber and an electron source device. The electron source device includes a cathode and a filament. The filament is disposed within the cathode. The cathode has a body and a cap disposed over the body. The cap has a receiving surface and a emitting surface opposite the receiving surface. The emitting surface has a convex shape facing the receiving area of the arc chamber and the receiving surface has a conical shape where a center area is a flat surface and the center area being surrounded by a tapered sidewall.

公开(公告)号：US10920087B2

公开(公告)日：2021-02-16

申请号：US16098728

申请日：2017-03-27

Applicant: ENTEGRIS, INC.

Inventor： Steven Bishop ,  Sharad N. Yedave ,  Oleg Bly ,  Joseph Sweeney ,  Ying Tang

IPC: C09D1/00 ,  H01J37/08 ,  C01B35/06 ,  H01J37/317 ,  H01J37/32

Abstract: A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

公开(公告)号：US20210035779A1

公开(公告)日：2021-02-04

申请号：US16524646

申请日：2019-07-29

Applicant: APPLIED Materials, Inc.

Inventor： Costel Biloiu ,  Appu Naveen Thomas ,  Tyler Rockwell ,  Frank Sinclair ,  Christopher Campbell

IPC: H01J37/32 ,  H01J37/08

Abstract: An ion beam processing apparatus may include a plasma chamber, and a plasma plate, disposed alongside the plasma chamber, where the plasma plate defines a first extraction aperture. The apparatus may include a beam blocker, disposed within the plasma chamber and facing the extraction aperture. The apparatus may further include a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture.