公开(公告)号：US5404017A

公开(公告)日：1995-04-04

申请号：US84145

申请日：1993-07-01

Applicant: Noriyuki Inuishi ,  Tadashi Kumakiri ,  Kouichirou Akari ,  Jun Munemasa

Inventor： Noriyuki Inuishi ,  Tadashi Kumakiri ,  Kouichirou Akari ,  Jun Munemasa

IPC: C23C14/48 ,  H01J27/08 ,  H01J37/317

CPC classification number: H01J27/08 ,  H01J37/3171 ,  H01J2237/0822

Abstract: An ion implantation apparatus is intended to perform the ion implantation for the desired surface of a target irrespective of the surface geometry thereof, and to simplify the structure. The apparatus includes a vacuum chamber, and a plurality of arc ion sources for emitting ion beams on the surface of the target disposed within the vacuum chamber. A plurality of arc ion source mounting openings are formed on the vacuum chamber. One or more of arc ion sources necessary for emitting ion beams on the desired surface of the target are airtightly mounted on the openings opposed to the above surface.

Abstract translation: 离子注入装置旨在对靶的期望表面执行离子注入，而与其表面几何形状无关，并且简化结构。 该设备包括一个真空室和多个用于在设置在该真空室内的靶的表面上发射离子束的电弧离子源。 在真空室上形成多个电弧离子源安装孔。 在靶的期望表面上发射离子束所需的一个或多个电弧离子源气密地安装在与上述表面相对的开口上。

公开(公告)号：US5372674A

公开(公告)日：1994-12-13

申请号：US189262

申请日：1994-01-28

Applicant: George Steinberg

Inventor： George Steinberg

IPC: C23F4/00 ,  H01J27/08 ,  H01J37/08 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22

CPC classification number: H01J37/32009 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/3255 ,  H01J2237/3341

Abstract: The electrode (11) of the present invention is used in a Plasma Assisted Chemical Etching process and comprises an inner member (47) surrounded by an outer member (45) defining a gap (77) therebetween such that a gas can flow therethrough. In the preferred embodiment, the inner member (47) and the concentric outer member (45) are both cylindrical in shape, therefore, the gap (77) has an annular configuration. A vertical ducting system is bored within the inner member (47) and directly or indirectly intersects the annular gap (77).

Abstract translation: 本发明的电极（11）用于等离子辅助化学蚀刻工艺中，并且包括由外部构件（45）围绕的内部构件（47），外部构件（45）在其间限定间隙（77），使得气体可以流过其中。 在优选实施例中，内部构件（47）和同心外部构件（45）的形状都是圆柱形，因此间隙（77）具有环形构造。 垂直管道系统在内部构件（47）内钻孔，并与环形间隙（77）直接或间接相交。

公开(公告)号：US5288386A

公开(公告)日：1994-02-22

申请号：US913927

申请日：1992-07-17

Applicant: Kenichi Yanagi ,  Mitsuo Kato ,  Kazuya Tsurusaki ,  Toshio Taguchi ,  Kenji Atarashiya ,  Tadashi Rokkaku ,  Ichiro Yamashita

Inventor： Kenichi Yanagi ,  Mitsuo Kato ,  Kazuya Tsurusaki ,  Toshio Taguchi ,  Kenji Atarashiya ,  Tadashi Rokkaku ,  Ichiro Yamashita

IPC: H01J27/08 ,  H01J27/18 ,  H01J37/08 ,  H01J37/317 ,  C23C14/35

CPC classification number: H01J27/08 ,  H01J27/18 ,  H01J37/08 ,  H01J37/3178 ,  H01J2237/0822

Abstract: A sputtering apparatus including two electrodes, a sputtering target disposed on one of the electrodes, and a gas supply for supplying a discharge gas in a vacuum to produce an electric discharge between the two electrodes and whereby particles sputtered from the target due to impact thereon of ions produced by the discharge, are deposited on a substrate. The target disposed on one electrode is formed into an elongated band and the other electrode is disposed so as to enclose the target. The other electrode is also provided with a magnet for producing a magnetic field thereon, and further includes a narrow elongated slot which defines a narrow sputter particle outlet. The narrow sputter particle outlet permits a pressure to exist near the electrical discharge which is higher than the pressure near the substrate. According to a preferred embodiment, the sputtering apparatus has an ion source combined integrally therewith.

Abstract translation: 一种溅射装置，包括两个电极，设置在一个电极上的溅射靶，以及用于在真空中供应放电气体以在两个电极之间产生放电的气体源，由此由于其上的冲击而从靶溅射的颗粒 通过放电产生的离子沉积在基底上。 设置在一个电极上的靶被形成为细长带，并且另一个电极被设置成包围靶。 另一个电极还设置有用于在其上产生磁场的磁体，并且还包括限定窄的溅射颗粒出口的窄的细长槽。 窄的溅射粒子出口允许在高于衬底附近的压力的放电附近存在压力。 根据优选实施例，溅射装置具有与其一体地组合的离子源。

公开(公告)号：US5168197A

公开(公告)日：1992-12-01

申请号：US858865

申请日：1992-03-27

Applicant: Moritake Tamba ,  Katushige Yamada ,  Kazuhiko Kawamura

Inventor： Moritake Tamba ,  Katushige Yamada ,  Kazuhiko Kawamura

IPC: C23C14/48 ,  H01J27/08 ,  H01J27/16 ,  H01J27/18 ,  H01J37/08 ,  H01J37/30 ,  H01J37/317 ,  H05H1/46 ,  H05H1/48

CPC classification number: H01J37/08 ,  H01J27/16 ,  H01J37/3178

Abstract: An ion beam generating apparatus including a vacuum chamber for retaining a vacuum therein, a microwave being introduced therein through at least one portion thereof, at least one vacuum arc plasma generating source having a cathode, an anode, and arc generating device and disposed inside the vacuum chamber, and ion extracting device for extracting ions from the plasma.

公开(公告)号：US5144143A

公开(公告)日：1992-09-01

申请号：US641692

申请日：1991-01-16

Applicant: Mario Raspagliesi ,  Candido Medulla

Inventor： Mario Raspagliesi ,  Candido Medulla

IPC: C23C14/48 ,  H01J27/08 ,  H01J27/22 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J27/22 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  H01J2237/31701

Abstract: The device comprises a cylindrical casing provided with an internal cavity and with a flange and an arc chamber superimposed over the cylindrical casing and including a filament electrically supplied through supply conductors external to said casing and supported by said flange, a repeller plate held at a negative voltage through supply conductors external to said casing and supported by said flange and an inlet for a gas which may be ionized, Inside the arc chamber there is also a support for the metal to be ionized supported and connected electrically to an electrode at a negative voltage by means of a rod passing through the internal cavity of said cylindrical casing.

公开(公告)号：US4994164A

公开(公告)日：1991-02-19

申请号：US453032

申请日：1989-12-11

Applicant: Henri Bernardet ,  Chantal Thiebaut

Inventor： Henri Bernardet ,  Chantal Thiebaut

IPC: H01J37/06 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J27/08 ,  H01J37/08

Abstract: A metallurgic implantation apparatus of metal ions having a large emitting surface, a considerable flux and a controllable implantation depth comprises within an implantation chamber held in vacuo at least one vacuum arc ion source (1, 2, 3, 4) from which the ions (5) are extracted and projected onto a target plate (9) by means of an extraction and focusing electrode (6,7) and of an acceleration electrode (8) polarized at a very high and at a low voltage, respectively. The target plate (9) bombarded by the projection of ions emits a flux of secondary electrons, which are repelled by a suppression electrode (10) polarized negatively with respect to the target plate connected to ground.

Abstract translation: 具有大的发射表面，相当大的通量和可控的注入深度的金属离子的冶金注入装置包括在真空中保持真空电弧离子源（1,2,3,4）的注入室内，离子源（ 5）通过提取和聚焦电极（6,7）和分别以非常高和低电压极化的加速电极（8）被提取并投影到目标板（9）上。 由离子投影轰击的目标板（9）发射二次电子束，其被相对于连接到地面的目标板负偏振的抑制电极（10）排斥。

公开(公告)号：US4960991A

公开(公告)日：1990-10-02

申请号：US422936

申请日：1989-10-17

Applicant: Paul C. Goodley ,  Stuart C. Hansen

Inventor： Paul C. Goodley ,  Stuart C. Hansen

IPC: G01N27/62 ,  G01N30/72 ,  H01J27/08 ,  H01J49/10 ,  H01J49/14

CPC classification number: H01J49/107 ,  H01J27/08 ,  H01J49/145

Abstract: A multimode ionization source includes a resistive filament aligned with an exit cone orifice. The filament generates electrons that bombard molecules near the orifice. In electron impact mode, a pressure regulator selects a low pressure within an ionization chamber and gaseous analyte is injected through a gas inlet and ionized by electron bombardment. In chemical ionization mode, an intermediate pressure of reagent gas established; electrons ionize the reagent gas. Gaseous analyte is introduced is ionized by the reagent gas through chemical interaction. In thermospray mode, a high pressure is established and heated liquid analyte is introduced into the chamber as a spray which is ionized by ion evaporation; in a thermospray/chemical ionization submode, filament activation supplements ion evaporation. Ions produced in all modes can be directed to a mass analyzer for analysis.

公开(公告)号：US4891525A

公开(公告)日：1990-01-02

申请号：US271241

申请日：1988-11-14

Applicant: Larry E. Frisa ,  Monroe L. King ,  Stephen E. Sampayan

Inventor： Larry E. Frisa ,  Monroe L. King ,  Stephen E. Sampayan

IPC: H01J27/20 ,  H01J27/08 ,  H01J27/10 ,  H01J37/08 ,  H01L21/265

CPC classification number: H01J37/08 ,  H01J27/10

Abstract: An ion source of the side extraction type which includes auxiliary electrodes surrounding the cathode at the ends of the anode, and insulators surrounding the auxiliary electrodes and electrically isolating them from the anode. The auxiliary electrodes essentially define the ends of the discharge chamber, leaving the anode confined to the cylindrical surface surrounding the filament. Each insulator is made up of an inner insulator and an outer insulator with an annular space defined between them. The inner and outer insulators are each in the form of a cylinder with a radially extending flange formed at one end, and interfit with the anode and with each other such that cylindrical spaces are defined between the outer flange portion and the anode and between the inner and outer flange portions. These and other features contribute to improve the electrical isolation between the auxiliary electrode and the anode, prolong source life, and improve beam purity.

Abstract translation: 侧面提取型离子源包括在阳极端部包围阴极的辅助电极，以及包围辅助电极并将其与阳极电隔离的绝缘体。 辅助电极基本上限定了放电室的端部，使阳极限制在围绕灯丝的圆柱形表面上。 每个绝缘体由内绝缘体和外绝缘体组成，其间具有限定的环形空间。 内绝缘体和外绝缘体各自为圆柱形，其一端形成有径向延伸的凸缘，并且与阳极相互配合，使得圆柱形空间限定在外凸缘部分和阳极之间以及内部 和外凸缘部分。 这些和其他特征有助于改善辅助电极和阳极之间的电隔离，延长源寿命，并提高光束纯度。

公开(公告)号：US4857809A

公开(公告)日：1989-08-15

申请号：US210137

申请日：1988-06-27

Applicant: Yasuhiro Torii ,  Seitaro Matsuo ,  Iwao Watanabe ,  Masaru Shimada

Inventor： Yasuhiro Torii ,  Seitaro Matsuo ,  Iwao Watanabe ,  Masaru Shimada

IPC: H01J37/08 ,  H01J27/08 ,  H01J27/16 ,  H01J27/18 ,  H01L21/265

CPC classification number: H01J27/18

Abstract: In a microwave ion source utilizing a microwave and a magnetic field, a microwave introducing window has a multilayer structure of plates with different dielectric constants, a magnetic circuit is arranged to generate a magnetic field having a higher intensity than that defined by ECR (Electron Cyclotron Resonance) conditions so as to form a narrow high-density plasma, an ion extraction electrode has an ion extraction window whose contour falls within a center region of the narrow high-density plasma.

Abstract translation: 在利用微波和磁场的微波离子源中，微波引入窗具有具有不同介电常数的板的多层结构，磁路布置成产生具有比ECR（电子回旋加速器 共振）条件以形成窄的高密度等离子体，离子提取电极具有其轮廓落在窄的高密度等离子体的中心区域内的离子提取窗口。

公开(公告)号：US4846953A

公开(公告)日：1989-07-11

申请号：US144464

申请日：1988-01-19

Applicant: Yoshikazu Yoshida

Inventor： Yoshikazu Yoshida

IPC: H01J27/08 ,  H01J27/16 ,  H01J27/22 ,  H01J37/08

CPC classification number: H01J27/16 ,  H01J37/08

Abstract: A sputtering type of a metal ion source includes a microwave radiation means and a pair of magnetic poles to which a negative electric potential is applied. The magnetic pole acts as an electrode for retarding electrons when a sputtering target is placed at the pointed end of the magnetic pole, high density ions generated by the operation of PIG (Penning Ionization Guage) discharge and a magnetic field efficiently bombard and sputter a target, and a microwave discharge acts as an electron supplying source so that a stable discharge is maintained.

Abstract translation: 溅射型金属离子源包括微波辐射装置和施加负电位的一对磁极。 当溅射靶位于磁极的尖端时，磁极用作用于延迟电子的电极，通过PIG（Penning Ionization Guage）放电的操作产生的高密度离子和磁场有效地轰击并溅射靶 微波放电充当电子供给源，从而保持稳定的放电。