公开(公告)号：US10343186B2

公开(公告)日：2019-07-09

申请号：US15070594

申请日：2016-03-15

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: C23C16/455 ,  B05D1/00 ,  B05D1/36 ,  C23C16/30 ,  H01L21/02 ,  B05D3/14

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

公开(公告)号：US10283319B2

公开(公告)日：2019-05-07

申请号：US15835272

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: H01J37/32 ,  C23F1/12 ,  H01L21/311 ,  C23G5/00

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

公开(公告)号：US20180243787A1

公开(公告)日：2018-08-30

申请号：US15877632

申请日：2018-01-23

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: B05D3/10 ,  C23C16/02 ,  C23C18/12 ,  C23C18/06 ,  C23C16/40 ,  C23C16/28 ,  C23C16/18 ,  C23C16/14 ,  C23C16/04

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

公开(公告)号：US09895715B2

公开(公告)日：2018-02-20

申请号：US14612784

申请日：2015-02-03

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: C23C16/40 ,  B05D3/10 ,  C23C18/06 ,  C23C18/12 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28

CPC classification number: B05D3/107 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C18/06 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1245

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

公开(公告)号：US12227835B2

公开(公告)日：2025-02-18

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/00 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

公开(公告)号：US20240379347A1

公开(公告)日：2024-11-14

申请号：US18656799

申请日：2024-05-07

Applicant: ASM IP Holding B.V.

Inventor： Mikko Ruoho ,  Eva E. Tois ,  Viljami J. Pore ,  Marko Tuominen

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

Abstract: The present disclosure relates to methods and systems for selectively depositing a material comprising silicon and nitrogen onto a substrate comprising a first surface and a second surface, wherein the deposition occurs on the first surface of the substrate more so than on the second surface of the substrate. More specifically, the methods and systems comprise exposing a substrate that comprises a first surface and a second surface to a source of chlorine and a source of silicon, then exposing the substrate to a source of nitrogen to selectively deposit a material comprising silicon and nitrogen on the first surface of the substrate.

公开(公告)号：US20240234129A1

公开(公告)日：2024-07-11

申请号：US18402950

申请日：2024-01-03

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Michael Eugene Givens ,  Eric Jen Cheng Liu ,  Eric James Shero ,  Fu Tang ,  Marko Tuominen ,  Eva Elisabeth Tois ,  Andrea Illiberi ,  Tatiana Ivanova ,  Paul Ma ,  Gejian Zhao

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02178 ,  H01L21/02208 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/31111

Abstract: Methods and systems for forming structure comprising a threshold voltage tuning layer are disclosed. Exemplary methods include providing a treatment reactant to a reaction chamber to form a treated surface on the substrate surface and depositing threshold voltage tuning material overlying the treated surface. Additionally or alternatively, exemplary methods can include direct formation of metal silicide layers. Additionally or alternatively, exemplary methods can include use of an etchant.

公开(公告)号：US20240177992A1

公开(公告)日：2024-05-30

申请号：US18519172

申请日：2023-11-27

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Shaoren Deng ,  Giuseppe Alessio Verni ,  Daria Nevstrueva ,  Marko Tuominen ,  Charles Dezelah ,  Daniele Chiappe ,  Eva Elisabeth Tois ,  Viraj Madhiwala ,  Michael Givens

IPC: H01L21/02

CPC classification number: H01L21/02337 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/0228

Abstract: The disclosure relates to methods of forming organic polymers comprising polyimide and layers comprising the same and to methods of reducing polyamic acid content of an organic polymer. The embodiments of the disclosure further relate to methods of fabricating semiconductor devices, to selectively depositing a material on a surface of a semiconductor substrate and to semiconductor processing assemblies. The methods are characterized by contacting a polyimide-containing material, such as a layer, with a modifying agent that increases the proportion of polyimide in the organic polymer material.

公开(公告)号：US20240162036A1

公开(公告)日：2024-05-16

申请号：US18388548

申请日：2023-11-10

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Eva Elisabeth Tois ,  Daniele Chiappe ,  Marko Tuominen

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/0217 ,  C23C16/308 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02312

Abstract: The disclosure relates to methods and deposition assemblies for selectively depositing material including silicon and nitrogen on a first surface of a substrate relative to the second surface of the same substrate. In the disclosure, material including silicon and nitrogen is selectively deposited on a first surface of a substrate relative to a second surface of the same substrate by a cyclic deposition process by providing a substrate in a reaction chamber, providing a silicon precursor comprising silicon and halogen into the reaction chamber in a vapor phase and providing a nitrogen precursor into the reaction chamber in a vapor phase to form the material including silicon and nitrogen on the first surface.

公开(公告)号：US11975357B2

公开(公告)日：2024-05-07

申请号：US17547083

申请日：2021-12-09

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: C23C16/06 ,  B05D3/10 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C18/06 ,  C23C18/12

CPC classification number: B05D3/107 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C18/06 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1245

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.