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    Ion implanting apparatus
    81.
    发明申请
    Ion implanting apparatus 有权
    离子注入装置

    公开(公告)号：US20050253089A1

    公开(公告)日：2005-11-17

    申请号：US10845209

    申请日：2004-05-14

    Applicant: Syuichi Maeno ,  Masao Naito ,  Yasunori Ando ,  Hilton Glavish

    Inventor： Syuichi Maeno ,  Masao Naito ,  Yasunori Ando ,  Hilton Glavish

    IPC: H01J37/317 ,  G01N21/00 ,  H01L21/265

    CPC classification number: H01J37/3171 ,  H01J2237/0455 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/20228 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01L21/26513 ,  H01L21/2658

    Abstract: The ion implanting apparatus according to this invention includes: an ion source for producing the ion beam 20 including desired ion species and being shaped in a sheet with a width longer than a narrow width of a substrate 82, a mass separating magnet 36 for selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slit 72 for selectively making the desired ion species pass through by cooperating with the mass separating magnet 36, and a substrate drive device 86 for reciprocatedly driving the substrate 82 in a direction substantially perpendicular to the sheet face 20s of the ion beam 20 within an irradiating area of the ion beam 20 which has passed through a separating slit 72.

    Abstract translation: 根据本发明的离子注入装置包括：用于产生包括所需离子种类的离子束20的离子源，并且成形为具有比衬底82的窄宽度更长的宽度的片材;质量分离磁体36，用于选择性地导出 通过在与其表面垂直的方向上弯曲离子束来形成期望的离子种类，通过与质量分离磁体36配合选择性地使期望的离子种类通过的分离狭缝72和用于往复驱动的衬底驱动装置86 基板82在离开光束20的已经通过分离狭缝72的照射区域内与离子束20的片表面20s基本垂直的方向。

    Enhanced macroparticle filter and cathode arc source
    82.
    发明申请
    Enhanced macroparticle filter and cathode arc source 有权
    增强型大颗粒过滤器和阴极电弧源

    公开(公告)号：US20030155230A1

    公开(公告)日：2003-08-21

    申请号：US10342335

    申请日：2003-01-15

    Inventor： Xu Shi ,  Beng Kang Tay ,  Hong Siang Tan

    IPC: C23C014/32

    CPC classification number: H01J37/32055 ,  H01J27/14 ,  H01J37/32623 ,  H01J37/32935 ,  H01J37/3447 ,  H01J2237/022 ,  H01J2237/0455

    Abstract: A cathode arc source for depositing a coating on a substrate has an anode and a cathode station for a target, a first filter means comprising a filter duct having at least one bend, and first magnetic means for steering plasma through the filter duct for removal of macroparticles from the plasma. The apparatus comprises a second filter (10) for further removal of macroparticles from the plasma, made up of a baffle (11), an aperture (12) through which plasma can pass and second magnetic means (13) for steering plasma through the aperture. The aperture size may be less than 33% of the duct sectional area at that point. The source can also include an ion beam generator. Also described is a method of depositing coatings of ions using the second filter and closing the aperture in the filter when required.

    Abstract translation: 用于在衬底上沉积涂层的阴极电弧源具有用于靶的阳极和阴极站，包括具有至少一个弯曲部的过滤器管道的第一过滤器装置和用于通过过滤器导管等离子体的第一磁性装置，用于去除 来自等离子体的大颗粒。 该装置包括用于从等离子体进一步去除大颗粒的第二过滤器（10），其由挡板（11），等离子体可以通过的孔（12）和用于通过孔径转向等离子体的第二磁性装置（13） 。 孔径尺寸可以小于该点处管道截面面积的33％。 源还可以包括离子束发生器。 还描述了使用第二过滤器沉积离子涂层并在需要时关闭过滤器中的孔的方法。

    Enhanced macroparticle filter and cathode arc source
    83.
    发明授权
    Enhanced macroparticle filter and cathode arc source 有权
    增强型大颗粒过滤器和阴极电弧源

    公开(公告)号：US06511585B1

    公开(公告)日：2003-01-28

    申请号：US09530009

    申请日：2000-10-06

    Applicant: Xu Shi ,  Beng Kang Tay ,  Hong Siang Tan

    Inventor： Xu Shi ,  Beng Kang Tay ,  Hong Siang Tan

    IPC: C23C1400

    CPC classification number: H01J37/32055 ,  H01J27/14 ,  H01J37/32623 ,  H01J37/32935 ,  H01J37/3447 ,  H01J2237/022 ,  H01J2237/0455

    Abstract: A cathode arc source for depositing a coating on a substrate has an anode and a cathode station for a target, a first filter means comprising a filter duct having at least one bend, and first magnetic means for steering plasma through the filter duct for removal of macroparticles from the plasma. The apparatus comprises a second filter for further removal of macroparticles from the plasma, made up of a baffle, an aperture through which plasma can pass and second magnetic means for steering plasma through the aperture. The source can also include an ion beam generator. Also described is a method of depositing coatings of ions using the second filter and closing the aperture in the filter when required.

    Abstract translation: 用于在衬底上沉积涂层的阴极电弧源具有用于靶的阳极和阴极站，包括具有至少一个弯曲部的过滤器管道的第一过滤器装置和用于通过过滤器导管等离子体的第一磁性装置，用于去除 来自等离子体的大颗粒。 该装置包括用于从等离子体进一步除去大颗粒的第二过滤器，其由挡板，等离子体可以通过的孔和用于通过孔转向等离子体的第二磁性装置构成。 源还可以包括离子束发生器。 还描述了使用第二过滤器沉积离子涂层并在需要时关闭过滤器中的孔的方法。

    Adjustable mass resolving aperture
    87.
    发明授权
    Adjustable mass resolving aperture 有权
    可调质量分辨孔径

    公开(公告)号：US09401260B2

    公开(公告)日：2016-07-26

    申请号：US14217064

    申请日：2014-03-17

    Applicant: GLENN LANE FAMILY LIMITED LIABILITY LIMITED PARTNERSHIP

    Inventor： Glenn E. Lane

    IPC: H01J37/08 ,  H01J37/317 ,  H01J37/09

    CPC classification number: H01J37/3007 ,  C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/09 ,  H01J37/3171 ,  H01J49/062 ,  H01J49/26 ,  H01J2237/0213 ,  H01J2237/04 ,  H01J2237/0455 ,  H01J2237/152 ,  H01J2237/31701 ,  H01L21/265

    Abstract: Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

    Abstract translation: 本发明的实施例涉及可用于离子注入系统中的质量分辨孔径，该离子注入系统基于离子束中不需要的注入质量比（和/或质荷比）来选择性地排除离子种类 部件。 本发明的实施例涉及一种质量分辨孔径，该质量分辨孔径被分段，可调节和/或呈现出将撞击孔的迎面而来的离子物质的曲面。 本发明的实施例还涉及通过封闭的等离子体通道（CPC）超导体或玻色子能量传输系统对带电粒子的流过滤。

    CHARGED PARTICLE BEAM APPARATUS
    89.
    发明申请
    CHARGED PARTICLE BEAM APPARATUS 有权
    充电颗粒光束装置

    公开(公告)号：US20150034835A1

    公开(公告)日：2015-02-05

    申请号：US14447589

    申请日：2014-07-30

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Soichiro Matsunaga ,  Souichi Katagiri ,  Hajime Kawano

    IPC: H01J37/28 ,  H01J37/09 ,  H01J37/147 ,  H01J37/304

    CPC classification number: H01J37/28 ,  H01J37/06 ,  H01J37/09 ,  H01J37/147 ,  H01J37/3045 ,  H01J2237/0455 ,  H01J2237/06316 ,  H01J2237/065 ,  H01J2237/1501 ,  H01J2237/24465 ,  H01J2237/24535 ,  H01J2237/24542

    Abstract: An embodiment is to provide a technique that continuously applies a certain amount of an electron beam to a sample by selecting a beam applied to the sample from an electron beam emitted from an electron source in a scanning electron microscope. A charged particle apparatus is configured, including: a mechanism that detects the distribution of electric current strength with respect to the emitting direction of an electron beam emitted from an electron source; a functionality that predicts a fluctuation of an electric current applied to a sample by predicting the distribution of the electric current based on the detected result; a functionality that determines a position at which a beam applied to the sample is acquired based on the predicted result; and a mechanism that controls a position at which a probe beam is acquired based on the determined result.

    Abstract translation: 一个实施例是提供一种技术，其通过从扫描电子显微镜中从电子源发射的电子束中选择施加到样品的光束，将一定量的电子束连续地施加到样品。 一种带电粒子装置，包括：检测相对于从电子源发射的电子束的发射方向的电流强度分布的机构; 通过基于检测结果预测电流分布来预测施加到样本的电流的波动的功能; 基于预测结果确定施加到样本的光束的位置的功能; 以及基于所确定的结果来控制获取探测光束的位置的机构。

    Scanning electron microscope and scanning transmission electron microscope
    90.
    发明授权
    Scanning electron microscope and scanning transmission electron microscope 有权
    扫描电子显微镜和扫描透射电子显微镜

    公开(公告)号：US08878130B2

    公开(公告)日：2014-11-04

    申请号：US14232526

    申请日：2012-07-19

    Applicant: Hiromi Inada ,  Kuniyasu Nakamura

    Inventor： Hiromi Inada ,  Kuniyasu Nakamura

    IPC: H01J37/26 ,  H01J37/28 ,  H01J37/244 ,  H01J37/153 ,  H01J37/21 ,  G01N23/22

    CPC classification number: H01J37/263 ,  G01N23/2206 ,  H01J37/153 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0455 ,  H01J2237/0492 ,  H01J2237/153 ,  H01J2237/1532 ,  H01J2237/21 ,  H01J2237/221 ,  H01J2237/225 ,  H01J2237/226 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/2611 ,  H01J2237/2802

    Abstract: A scanning transmission electron microscope according to the present invention includes an electron lens system having a small spherical aberration coefficient for enabling three-dimensional observation of a 0.1 nm atomic size structure. The scanning transmission electron microscope according to the present invention also includes an aperture capable of changing an illumination angle; an illumination electron lens system capable of changing the probe size of an electron beam probe and the illumination angle; a secondary electron detector (9); a transmission electron detector (13); a forward scattered electron beam detector (12); a focusing unit (16); an image processor for identifying image contrast; an image processor for computing image sharpness; a processor for three-dimensional reconstruction of an image; and a mixer (18) for mixing a secondary electron signal and a specimen forward scattered electron signal.

    Abstract translation: 根据本发明的扫描透射电子显微镜包括具有小球面像差系数的电子透镜系统，用于实现0.1nm原子尺寸结构的三维观察。 根据本发明的扫描透射电子显微镜还包括能够改变照明角度的孔; 能够改变电子束探头的探头尺寸和照明角度的照明电子透镜系统; 二次电子检测器（9）; 透射电子检测器（13）; 前向散射电子束检测器（12）; 聚焦单元（16）; 用于识别图像对比度的图像处理器; 用于计算图像清晰度的图像处理器; 用于图像的三维重建的处理器; 以及用于混合二次电子信号和样本前向散射电子信号的混合器（18）。

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