公开(公告)号：US20150136977A1

公开(公告)日：2015-05-21

申请号：US14526971

申请日：2014-10-29

Applicant: FEI Company

Inventor： Alexander Buxbaum

IPC: H01J37/304 ,  H01J37/305 ,  G01N1/44 ,  H01J37/26 ,  G01N1/32

CPC classification number: H01J37/222 ,  G01N1/286 ,  G01N1/32 ,  G01N1/44 ,  H01J37/261 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/08 ,  H01J2237/20 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/262 ,  H01J2237/30466 ,  H01J2237/31745

Abstract: A method for using differential imaging for applications involving TEM samples by allowing operators to take multiple images during a procedure involving a focused ion beam procedure and overlaying the multiple images to create a differential image that clearly shows the differences between milling steps. The methods also involve generating real-time images of the area being milled and using the overlays of the differential images to show small changes in each image, and thus highlight the ion beam milling location. The methods also involve automating the process of creating differential images and using them to automatically mill subsequent slices.

Abstract translation: 一种在涉及TEM样品的应用中使用差分成像的方法，允许操作者在涉及聚焦离子束过程的过程中拍摄多个图像，并覆盖多个图像以产生清晰地显示铣削步骤之间的差异的差分图像。 该方法还涉及生成正在研磨的区域的实时图像并使用差分图像的叠加来显示每个图像中的小变化，并且因此突出显示离子束研磨位置。 这些方法还涉及自动化创建差分图像的过程，并使用它们来自动研磨随后的切片。

公开(公告)号：US20150129759A1

公开(公告)日：2015-05-14

申请号：US14474776

申请日：2014-09-02

Applicant: FEI Company

Inventor： Anthony Graupera ,  Charles Otis

IPC: H01J37/05 ,  H01J37/08

CPC classification number: H01J37/05 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/006 ,  H01J2237/049 ,  H01J2237/057 ,  H01J2237/08 ,  H01J2237/0817 ,  H01J2237/0827 ,  H01J2237/303 ,  H01J2237/31749

Abstract: An inductively coupled plasma source having multiple gases in the plasma chamber provides multiple ion species to a focusing column. A mass filter allows for selection of a specific ion species and rapid changing from one species to another.

Abstract translation: 在等离子体室中具有多个气体的电感耦合等离子体源向聚焦柱提供多个离子物质。 质量过滤器允许选择特定的离子种类并从一个物种快速变化到另一个物种。

公开(公告)号：US20150060668A1

公开(公告)日：2015-03-05

申请号：US14470135

申请日：2014-08-27

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Xin MAN ,  Tatsuya ASAHATA ,  Atsushi UEMOTO

IPC: H01J37/317 ,  H01J37/28 ,  H01J37/244

CPC classification number: H01J37/317 ,  H01J37/244 ,  H01J37/28 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/063 ,  H01J2237/08 ,  H01J2237/24475 ,  H01J2237/2802 ,  H01J2237/31749

Abstract: A charged particle beam apparatus for processing a tip end portion of a sample into a needle shape, includes an ion beam irradiation unit that irradiates the tip end portion with ion beams, an electron beam irradiation unit that irradiates the tip end portion with electron beams, a secondary electron detection unit that detects secondary electrons generated at the tip end portion by the irradiation with the electron beams, and an EBSD detection unit that detects diffracted electrons generated at the tip end portion by the irradiation with the electron beams.

Abstract translation: 一种用于将样品的尖端处理成针状的带电粒子束装置包括：用离子束照射前端部的离子束照射单元，用电子束照射前端部的电子束照射单元， 二次电子检测单元，其通过照射电子束来检测在前端部分产生的二次电子;以及EBSD检测单元，其通过用电子束的照射检测在前端部分产生的衍射电子。

公开(公告)号：US08900982B2

公开(公告)日：2014-12-02

申请号：US12756036

申请日：2010-04-07

Applicant: Kevin M. Daniels ,  Russell L. Low ,  Nicholas P. T. Bateman ,  Benjamin B. Riordon

Inventor： Kevin M. Daniels ,  Russell L. Low ,  Nicholas P. T. Bateman ,  Benjamin B. Riordon

IPC: H01L21/266 ,  H01J37/317

CPC classification number: C23C14/042 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/303 ,  H01J2237/31711 ,  H01L21/266

Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.

Abstract translation: 本文中公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。 掩模可以并入基板处理系统中，例如离子注入系统。 掩模可以包括设置在第一排中的一个或多个第一孔; 以及设置在第二排中的一个或多个第二孔，每排沿着所述掩模的宽度方向延伸，其中所述一个或多个第一孔和所述一个或多个第二孔是不均匀的。

公开(公告)号：US20140322902A1

公开(公告)日：2014-10-30

申请号：US13869456

申请日：2013-04-24

Applicant: Ashwini K. Sinha ,  Ching I. Li

Inventor： Ashwini K. Sinha ,  Ching I. Li

IPC: H01L21/265 ,  H01J27/02

CPC classification number: H01J27/02 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/26506 ,  H01L21/2658

Abstract: A novel process for using enriched and highly enriched dopant gases is provided herein that eliminates the problems currently encountered by end-users from being able to realize the process benefits associated with ion implanting such dopant gases. For a given flow rate within a prescribed range, operating at a reduced total power level of the ion source is designed to reduce the ionization efficiency of the enriched dopant gas compared to that of its corresponding non-enriched or lesser enriched dopant gas. The temperature of the source filament is also reduced, thereby mitigating the adverse effects of fluorine etching and ion source shorting when a fluorine-containing enriched dopant gas is utilized. The reduced levels of total power in combination with a lower ionization efficiency and lower ion source temperature can interact synergistically to improve and extend ion source life, while beneficially maintaining a beam current that does not unacceptably deviate from previously qualified levels.

Abstract translation: 本文提供了一种使用富集和高度富集的掺杂气体的新方法，其消除了终端用户目前遇到的问题，即能够实现与离子注入这种掺杂气体相关的工艺优点。 对于规定范围内的给定流速，在离子源的总功率水平降低的情况下操作，以减少富集的掺杂气体与其相应的非富集或较小浓度的掺杂气体相比的离子化效率。 源极丝的温度也降低，从而在使用富含氟的掺杂气体时减轻氟蚀刻和离子源短路的不利影响。 总功率的降低水平与较低的离子化效率和较低的离子源温度相结合可以相互协调地相互作用，以改善和延长离子源寿命，同时有利地保持不能接受地偏离先前合格水平的束流。

公开(公告)号：US20140202633A1

公开(公告)日：2014-07-24

申请号：US14250842

申请日：2014-04-11

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： Ludovic Godet ,  Xianfeng Lu ,  Deepak A. Ramappa

IPC: H01J37/32

CPC classification number: H01J37/32366 ,  C23C16/04 ,  C23C16/50 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/08 ,  H01J2237/31732

Abstract: A system for processing a substrate includes a plasma chamber to produce a plasma including reactive gas ions at a first pressure, a bias supply to supply a bias between the plasma chamber and the substrate, a plasma sheath modifier disposed between the plasma chamber and substrate, the plasma sheath modifier having an aperture configured to direct the reactive ions toward the substrate in a beam having an ion beam profile, and a process chamber enclosing the substrate, the process chamber at a second pressure different than the first pressure to define a pressure differential.

Abstract translation: 一种用于处理衬底的系统包括：等离子体室，用于产生包括在第一压力下的反应性气体离子的等离子体，用于在等离子体室和衬底之间提供偏压的偏压源;设置在等离子体室和衬底之间的等离子体护套改性剂， 所述等离子体护套改性剂具有孔，所述孔配置成将反应性离子以具有离子束轮廓的束引导至衬底;以及处理室，其包围所述衬底，所述处理室在不同于所述第一压力的第二压力下限定压力差 。

公开(公告)号：US20140167614A1

公开(公告)日：2014-06-19

申请号：US13719309

申请日：2012-12-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chin-Tsung LIN ,  Hsiao-Yin HSIEH ,  Chi-Hao HUANG ,  Hong-Hsing CHOU ,  Yeh-Chieh WANG

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/0203 ,  H01J2237/024 ,  H01J2237/026 ,  H01J2237/08 ,  H01J2237/303 ,  H01J2237/30405

Abstract: An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.

Abstract translation: 一种用于延长离子源的使用寿命的装置，包括电弧室，其包含要顺序使用的多个阴极，以及多个防水剂，以在不使用时保护阴极。 电弧室包括限定反应腔的电弧室壳体，气体注入开口，多个阴极和至少一个排斥元件。 用于延长离子源的使用寿命的方法包括向离子源中的电弧室的第一阴极提供电力，操作第一阴极，检测第一阴极的故障或性能下降，激励第二阴极，以及 与第二阴极连续操作电弧室。

公开(公告)号：US20140124363A1

公开(公告)日：2014-05-08

申请号：US14155655

申请日：2014-01-15

Applicant: CANON ANELVA CORPORATION

Inventor： Einstein Noel ABARRA ,  Yasushi KAMIYA ,  Yuta KONNO

IPC: C23C14/46

CPC classification number: C23C14/46 ,  H01J37/32412 ,  H01J2237/08

Abstract: The invention provides: an ion beam generator and an ion beam plasma processing apparatus including a movable member (for example, a plug) which is capable of reducing formation of an adhering film on a sidewall of the member even when an electrode included in a grid assembly is sputtered. The ion beam generator of an aspect of the invention includes: a grid assembly provided opposed to an upper wall; a plug movable in a first direction from the upper wall toward the grid assembly and in a second direction from the grid assembly toward the upper wall; and a shield configured to shield a sidewall of the plug.

Abstract translation: 本发明提供：一种离子束发生器和离子束等离子体处理装置，其包括可移动部件（例如，塞子），其能够减少在构件的侧壁上形成附着膜，即使在栅格中包括电极 组装被溅射。 本发明的一个方面的离子束发生器包括：与上壁相对设置的栅格组件; 可从第一方向从上壁向格栅组件移动并沿第二方向从网格组件向上壁运动的塞子; 以及被配置为屏蔽所述插头的侧壁的屏蔽。

公开(公告)号：US20140038393A1

公开(公告)日：2014-02-06

申请号：US13563056

申请日：2012-07-31

Applicant: Ludovic Godet ,  Xianfeng Lu ,  Deepak A. Ramappa

Inventor： Ludovic Godet ,  Xianfeng Lu ,  Deepak A. Ramappa

IPC: C23C16/50 ,  B05C9/00 ,  H01L21/203 ,  B44C1/22

CPC classification number: H01J37/32366 ,  C23C16/04 ,  C23C16/50 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/08 ,  H01J2237/31732

Abstract: A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate.

Abstract translation: 一种处理衬底的方法包括执行第一曝光，其包括在等离子体室中产生含有反应气体离子的等离子体，并在衬底和等离子体室之间产生偏置电压。 该方法还包括提供等离子体护套改性剂，其具有设置在等离子体和衬底之间的孔，并可操作以将反应性气体离子引向衬底，并且在反应性气体离子被引导到等离子体室和衬底区域之间建立压力差 底物。

公开(公告)号：US20140011346A1

公开(公告)日：2014-01-09

申请号：US14006662

申请日：2012-03-22

Applicant: Oleg Byl ,  Chongying Xu ,  William Hunks ,  Richard S. Ray

Inventor： Oleg Byl ,  Chongying Xu ,  William Hunks ,  Richard S. Ray

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J2237/08 ,  H01L21/26513 ,  H01L21/26566

Abstract: An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster phosphorus or cluster arsenic compounds, for achieving P- and/or As-doping, in the production of doped articles of manufacture, e.g., silicon wafers or precursor structures for manufacturing microelectronic devices.

Abstract translation: 一种离子注入方法，其中掺杂剂源组合物被离子化以形成掺杂剂离子，并且掺杂剂离子注入到衬底中。 掺杂剂源组合物包括聚磷或聚集砷化合物，用于在制造掺杂制品例如硅晶片或用于制造微电子器件的前体结构的生产中实现P-和/或As掺杂。