Optoelectronic Devices Based on Heterojunctions of Single-Walled Carbon Nanotubes and Silicon
    1.
    发明申请
    Optoelectronic Devices Based on Heterojunctions of Single-Walled Carbon Nanotubes and Silicon 审中-公开
    基于单壁碳纳米管和硅的异质结的光电器件

    公开(公告)号:US20150228917A1

    公开(公告)日:2015-08-13

    申请号:US14428398

    申请日:2013-09-19

    Abstract: Heterojunctions of single-walled carbon nanotubes and p-doped silicon produce a photocurrent when irradiated with visible light under reverse bias conditions. In optoelectronic devices utilizing the heterojunctions, the output current can be controlled completely by both optical and electrical inputs. The heterojunctions provide a platform for heterogeneous optoelectronic logic elements with high voltage-switchable photocurrent, photo-voltage responsivity, electrical ON/OFF ratio, and optical ON/OFF ratio. The devices are combined to make switches, logic elements, and imaging sensors. An assembly of 250,000 sensor elements on a centimeter-scale wafer is also provided, with each sensor element having a heterojunction of single-walled carbon nanotubes and p-doped silicon, and producing a current dependent on both the optical and the electrical input.

    Abstract translation: 单壁碳纳米管和p掺杂硅的杂质在反向偏压条件下用可见光照射时产生光电流。 在利用异质结的光电器件中,输出电流可以通过光输入和电输入完全控制。 异质结为具有高电压切换光电流,光电压响应度,电开/关比和光ON / OFF比的异质光电逻辑元件提供了一个平台。 这些器件被组合以制造开关,逻辑元件和成像传感器。 还提供了在厘米级晶片上的25万个传感器元件的组件,每个传感器元件具有单壁碳纳米管和p掺杂硅的异质结,并产生取决于光学和电气输入的电流。

    Ion-doped two-dimensional nanomaterials

    公开(公告)号:US11325343B2

    公开(公告)日:2022-05-10

    申请号:US16484024

    申请日:2017-09-11

    Abstract: Ion-doped two-dimensional nanomaterials are made by inducing electronic carriers (electrons and holes) in a two-dimensional material using a captured ion layer at the surface of the material. The captured ion layer is stabilized using a capping layer. The induction of electronic carriers works in atomically-thin two-dimensional materials, where it induces high carrier density of at least 1014 carriers/cm2. A variety of novel ion-doped nanomaterials and p-n junction-based nanoelectronic devices are made possible by the method.

    Flexible and Transparent Supercapacitors and Fabrication Using Thin Film Carbon Electrodes with Controlled Morphologies
    9.
    发明申请
    Flexible and Transparent Supercapacitors and Fabrication Using Thin Film Carbon Electrodes with Controlled Morphologies 有权
    柔性和透明超级电容器和使用具有受控形态的薄膜碳电极的制造

    公开(公告)号:US20150332868A1

    公开(公告)日:2015-11-19

    申请号:US14391458

    申请日:2013-04-15

    Abstract: Mechanically flexible and optically transparent thin film solid state supercapacitors are fabricated by assembling nano-engineered carbon electrodes in porous templates. The electrodes have textured graphitic surface films with a morphology of interconnected arrays of complex shapes and porosity. The graphitic films act as both electrode and current collector, and when integrated with solid polymer electrolyte function as thin film supercapacitors. The nanostructured electrode morphology and conform al electrolyte packaging provide enough energy and power density for electronic devices in addition to possessing excellent mechanical flexibility and optical transparency.

    Abstract translation: 机械灵活和光学透明的薄膜固态超级电容器是通过将纳米工程碳电极组装在多孔模板中制造的。 电极具有纹理的石墨表面膜,具有复杂形状和孔隙率的互连阵列的形态。 石墨膜充当电极和集电器,并且当与固体聚合物电解质结合用作薄膜超级电容器时。 除具有优异的机械灵活性和光学透明性之外,纳米结构电极形态和符合电解质封装为电子器件提供了足够的能量和功率密度。

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