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    METHOD AND APPARATUS FOR FORMING ORGANIC MONOLAYER
    1.
    发明申请
    METHOD AND APPARATUS FOR FORMING ORGANIC MONOLAYER 审中-公开
    用于形成有机单体的方法和装置

    公开(公告)号：US20150147487A1

    公开(公告)日：2015-05-28

    申请号：US14553914

    申请日：2014-11-25

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Takashi FUSE ,  Tomohito MATUO ,  Hidetoshi KINOSHITA

    IPC: B05D1/00 ,  C23C16/52 ,  C23C16/50 ,  C23C16/452

    CPC classification number: C23C16/50 ,  B05D1/60 ,  B05D1/62 ,  B05D3/0433 ,  C23C16/452

    Abstract: A method for forming an organic monolayer includes supplying to an object an organic material gas including organic molecules, each molecule having a binding site that is to be chemically bonded to a surface of the object. The method further includes supplying excited hydrogen to the organic material gas before the organic material gas reaches the object to substitute an end of the binding site with hydrogen, and forming an organic monolayer by reaction between the end substituted with the hydrogen and the object.

    Abstract translation: 形成有机单层的方法包括向对象提供包括有机分子的有机材料气体，每个分子具有待化学键合到物体表面的结合位点。 该方法还包括在有机材料气体到达物体之前向有机材料气体供给激发的氢气，用氢代替结合位点的末端，并且通过在被氢取代的端部与物体之间的反应形成有机单层。

    Germanium oxide pre-clean module and process
    4.
    发明授权
    Germanium oxide pre-clean module and process 有权
    氧化锗预清洁模块和工艺

    公开(公告)号：US09474163B2

    公开(公告)日：2016-10-18

    申请号：US14586438

    申请日：2014-12-30

    Applicant: ASM IP HOLDING B.V.

    Inventor： John Tolle ,  Matthew G. Goodman

    IPC: B05D3/02 ,  B05D3/04 ,  H05K3/00 ,  H01L21/02 ,  H01L21/306 ,  B05D3/00

    CPC classification number: H01L21/0206 ,  B05D3/002 ,  B05D3/02 ,  B05D3/04 ,  B05D3/0433 ,  H01L21/02041 ,  H01L21/02046 ,  H01L21/306

    Abstract: In some embodiments, a method for integrated circuit fabrication includes removing oxide material from a surface of a substrate, where the surface includes silicon and germanium. Removing the oxide material includes depositing a halogen-containing pre-clean material on a silicon oxide-containing surface and sublimating a portion of the halogen-containing pre-clean material to expose the silicon on the surface. A passivation film is deposited on the exposed silicon. The passivation film may include chlorine. The passivation film may prevent contamination of the silicon surface by chemical species from the later sublimation, which may be at a higher temperature than the earlier sublimation. Subsequently, a remaining portion of the halogen-containing pre-clean material and the passivation film are sublimated. A target material, such as a conductive material, may subsequently be deposited on the substrate surface.

    Abstract translation: 在一些实施例中，用于集成电路制造的方法包括从衬底的表面去除氧化物材料，其中表面包括硅和锗。 除去氧化物材料包括将含卤素的预清洁材料沉积在含氧化硅的表面上并升华部分含卤素的预清洁材料以暴露表面上的硅。 钝化膜沉积在暴露的硅上。 钝化膜可以包括氯。 钝化膜可以防止来自稍后升华的化学物质对硅表面的污染，其可能处于比先前的升华更高的温度。 随后，将含卤素预清洁材料和钝化膜的剩余部分升华。 可以随后将诸如导电材料的靶材料沉积在衬底表面上。

    Vaporous amine catalyst spray method of applying a film to a substrate
    6.
    发明授权
    Vaporous amine catalyst spray method of applying a film to a substrate 失效
    蒸镀胺催化剂喷涂方法，将膜施加到基材上

    公开(公告)号：US4517222A

    公开(公告)日：1985-05-14

    申请号：US615135

    申请日：1984-05-30

    Applicant: James R. Blegen

    Inventor： James R. Blegen

    IPC: B05D1/04 ,  B05D1/02 ,  B05D1/34 ,  B05D3/04 ,  B05D3/10 ,  B05D7/24 ,  C08G18/08 ,  C08G18/18 ,  C08G18/42 ,  C09D5/46 ,  C09D175/04 ,  B05D1/06

    CPC classification number: C08G18/18 ,  B05D1/02 ,  B05D1/34 ,  B05D3/0433 ,  C08G18/0895 ,  C08G18/1891 ,  C08G18/4205 ,  C09D175/04

    Abstract: Disclosed is a novel method for applying a film of a coating composition in liquid form onto a substrate which applied film cures rapidly at room temperature without heat curing. The coating composition comprises a hydroxyl-functional compound (preferably bearing aromatic-hydroxyl groups) and a multi-isocyanate cross-linking agent, optionally dispersed in a fugitive organic solvent therefor. The method comprises the steps of:(a) concurrently generating an atomizate of said coating composition and a carrier gas bearing a catalytic amount of a vaporous tertiary amine;(b) mixing said atomizate and said vaporous catalytic amine-bearing carrier gas flow; and(c) directing said mixture of step (b) onto said substrate to form said applied film.

    Abstract translation: 公开了一种将液体形式的涂料组合物的膜施加到基材上的新方法，该涂布膜在室温下快速固化而不进行热固化。 涂料组合物包含任选分散在其挥发性有机溶剂中的羟基官能化合物（优选带有芳族羟基）和多异氰酸酯交联剂。 该方法包括以下步骤：（a）同时产生所述涂料组合物的雾化物和载有催化量的蒸气叔胺的载气; （b）混合所述雾化物和所述气态催化胺载体载气流; 和（c）将步骤（b）的所述混合物引导到所述基底上以形成所述涂覆的膜。

    GERMANIUM OXIDE PRE-CLEAN MODULE AND PROCESS
    8.
    发明申请
    GERMANIUM OXIDE PRE-CLEAN MODULE AND PROCESS 有权
    氧化锗预清洁模块和工艺

    公开(公告)号：US20160192502A1

    公开(公告)日：2016-06-30

    申请号：US14586438

    申请日：2014-12-30

    Applicant: ASM IP HOLDING B.V.

    Inventor： John Tolle ,  Matthew G. Goodman

    IPC: H05K3/00

    CPC classification number: H01L21/0206 ,  B05D3/002 ,  B05D3/02 ,  B05D3/04 ,  B05D3/0433 ,  H01L21/02041 ,  H01L21/02046 ,  H01L21/306

    Abstract: In some embodiments, a method for integrated circuit fabrication includes removing oxide material from a surface of a substrate, where the surface includes silicon and germanium. Removing the oxide material includes depositing a halogen-containing pre-clean material on a silicon oxide-containing surface and sublimating a portion of the halogen-containing pre-clean material to expose the silicon on the surface. A passivation film is deposited on the exposed silicon. The passivation film may include chlorine. The passivation film may prevent contamination of the silicon surface by chemical species from the later sublimation, which may be at a higher temperature than the earlier sublimation. Subsequently, a remaining portion of the halogen-containing pre-clean material and the passivation film are sublimated. A target material, such as a conductive material, may subsequently be deposited on the substrate surface.

    Abstract translation: 在一些实施例中，用于集成电路制造的方法包括从衬底的表面去除氧化物材料，其中表面包括硅和锗。 除去氧化物材料包括将含卤素的预清洁材料沉积在含氧化硅的表面上并升华部分含卤素的预清洁材料以暴露表面上的硅。 钝化膜沉积在暴露的硅上。 钝化膜可以包括氯。 钝化膜可以防止来自稍后升华的化学物质对硅表面的污染，其可能处于比先前的升华更高的温度。 随后，将含卤素预清洁材料和钝化膜的剩余部分升华。 可以随后将诸如导电材料的靶材料沉积在衬底表面上。

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