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Patent Agency Ranking
公开(公告)号：KR1020170042489A
公开(公告)日：2017-04-19
申请号：KR1020160129760
申请日：2016-10-07
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/3213 , H01L21/02 , H05H1/46 , H01L21/67
CPC classification number: H01J37/32669 , H01J37/32091 , H01J37/3244 , H01J37/32715 , H01J2237/334 , H01L21/31116 , H01L21/67069
Abstract: [과제] 본발명은직경방향의막의에칭률의분포의제어성을높이는것을목적으로한다. [해결수단] 일실시형태에따른플라즈마에칭방법에서는, 용량결합형플라즈마처리장치의배치대상에배치된피처리체의단일의막에대한플라즈마에칭을위해서, 처리가스의플라즈마가생성된다. 상기플라즈마가생성되고있는기간에있어서, 중심축선에대해직경방향에있어서의단일의막의에칭률의분포를변화시키도록, 플라즈마처리장치의상부전극위의복수의전자석의코일에공급되는전류가제어된다.
Abstract translation: 本发明的目的在于改善膜的蚀刻速率沿径向分布的可控性。 解决问题的手段在根据一个实施方式的等离子体蚀刻方法中，产生处理气体的等离子体，用于等离子体蚀刻放置在电容耦合等离子体处理设备的物体中的待处理物体的单个膜。 向等离子体处理装置的上部电极上的多个电磁铁的线圈供给的电流被控制为，在产生等离子体的期间内，改变单一膜相对于中心轴的半径方向的蚀刻速度的分布 是的。
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公开(公告)号：KR101070138B1
公开(公告)日：2011-10-05
申请号：KR1020107005994
申请日：2008-08-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02271 , C23C16/4486 , H01L21/02181 , H01L21/31612 , H01L21/31645 , H01L21/3185
Abstract: 기판에대하여액체재료를기화시킨기체재료를공급하여성막처리를실행하는데있어서, 높은효율로액체재료를기화하여, 파티클의발생을억제하는것. 기판에대하여성막처리를실행하기위한액체재료중에, 양및 음중 한쪽으로대전된입경이 1000nm 이하인기포를발생시켜, 이액체재료를무화해서액체재료의미스트를형성하고, 또한그 액체재료의미스트를가열하여기화시킨다. 액체재료중에는, 미리매우적은기포가높은균일성을가지고분산되기때문에, 이액체재료를무화하면, 지극히미세하고균일한액체재료의미스트를얻을수 있기때문에, 열교환하기쉬운상태가된다. 이액체재료의미스트를기화하면, 기화효율이높아져, 파티클의발생을억제할수 있다.
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公开(公告)号：KR101124924B1
公开(公告)日：2012-04-12
申请号：KR1020097014829
申请日：2007-12-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H05H1/46 , H01L21/3065 , H01L21/205
CPC classification number: H01J37/32568 , H01J37/32082 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32541
Abstract: A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.
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公开(公告)号：KR1020100045511A
公开(公告)日：2010-05-03
申请号：KR1020107005994
申请日：2008-08-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02271 , C23C16/4486 , H01L21/02181 , H01L21/31612 , H01L21/31645 , H01L21/3185
Abstract: This invention provides a vaporization apparatus which, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct film formation treatment, can vaporize the liquid material with a high efficiency to suppress the occurrence of particles. Bubbles, which have been electrified either positively or negatively and have a particle diameter of 1000 nm or less, are produced in a liquid material for the formation of a film on a substrate to atomize the liquid material and to form a mist of the liquid material. Further, the mist of the liquid material is heated for vaporization. Very fine bubbles are previously dispersed very homogeneously in the liquid material. Accordingly, upon the atomization of the liquid material, a very fine and homogeneous liquid material mist is produced, and, thus, heat exchange is very easy. When this liquid material mist is vaporized, the vaporization efficiency is enhanced, and the occurrence of particles can be suppressed.
Abstract translation: 本发明提供一种蒸发装置，在将液体材料蒸发到基板上进行成膜处理而制造的气体材料中，可以高效率地蒸发液体材料，以抑制颗粒的发生。 在用于在基板上形成膜的液体材料中产生已经正电或负极地具有1000nm或更小的电气化的气泡，以使液体材料雾化并形成液体材料的雾 。 此外，液体材料的雾被加热以蒸发。 非常细小的气泡预先非常均匀地分散在液体材料中。 因此，在液体材料的雾化时，产生非常细且均匀的液态物质雾，因此热交换非常容易。 当该液态物质雾蒸发时，汽化效率提高，能够抑制粒子的产生。
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公开(公告)号：KR1020090091332A
公开(公告)日：2009-08-27
申请号：KR1020097014829
申请日：2007-12-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H05H1/46 , H01L21/3065 , H01L21/205
CPC classification number: H01J37/32568 , H01J37/32082 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32541
Abstract: Disclosed is a plasma processing apparatus wherein good temperature controllability is obtained in the side wall of the processing vessel and damage to the substrate by plasma is suppressed. Specifically disclosed is a plasma processing apparatus (1) comprising a first electrode (31) and a second electrode (32) so arranged in the upper portion of a processing vessel (11) as to face a stage (2), a gas supplying unit (4) for supplying a process gas between the first electrode (31) and the second electrode (32), a high-frequency power supply unit (33) for applying a high-frequency power between the first electrode (31) and the second electrode (32) for changing the process gas supplied between the electrodes (31, 32) into a plasma, and an evacuation system (14) for vacuum evacuating the atmosphere within the processing vessel (11) from the lower portion of the processing vessel (11). Since the electron temperature in the plasma is low near a substrate B on the stage (2), damage to the substrate B caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing vessel (11), the processing vessel (11) can have good temperature controllability. ® KIPO & WIPO 2009
Abstract translation: 公开了一种等离子体处理装置，其在处理容器的侧壁中获得良好的温度可控性，并且抑制了通过等离子体对基板的损坏。 具体公开了一种等离子体处理装置（1），其包括第一电极（31）和第二电极（32），所述第一电极（31）和第二电极（32）被布置在处理容器（11）的上部以面向台（2），气体供应单元 （4），用于在第一电极（31）和第二电极（32）之间提供处理气体;高频电源单元（33），用于在第一电极（31）和第二电极 电极（32），用于将在电极（31,32）之间供给的工艺气体改变为等离子体;以及抽真空系统（14），用于从处理容器的下部真空排空处理容器（11）内的气氛 11）。 由于在载物台（2）上的基板B附近的等离子体中的电子温度低，所以能够抑制由等离子体引起的对基板B的损伤。 此外，由于金属可以用作处理容器（11）的材料，处理容器（11）可以具有良好的温度可控性。 ®KIPO＆WIPO 2009
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