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    Focused ion beam apparatus with precious metal emitter surface
    2.
    发明授权
    Focused ion beam apparatus with precious metal emitter surface 有权
    聚焦离子束设备，具有贵金属发射体表面

    公开(公告)号：US09336979B2

    公开(公告)日：2016-05-10

    申请号：US14591843

    申请日：2015-01-07

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Anto Yasaka ,  Fumio Aramaki ,  Yasuhiko Sugiyama ,  Tomokazu Kozakai ,  Osamu Matsuda

    IPC: H01J27/02 ,  H01J37/08 ,  H01J37/305 ,  H01J27/26

    CPC classification number: H01J27/024 ,  H01J27/26 ,  H01J37/08 ,  H01J37/3056 ,  H01J2237/0807 ,  H01J2237/182

    Abstract: A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.

    Abstract translation: 聚焦离子束装置具有离子源室，其中设置有用于发射离子的发射极。 发射体的表面由贵金属形成，例如铂，钯，铱，铑或金。 气体供给单元向离子源室供给氮气，使得氮气吸附在发射体的表面。 提取电极与发射极间隔开，并向提取电极施加电压，使吸附的氮气离子化，并以离子束形式提取氮离子。 温度控制单元控制发射器的温度。

    Method for fabricating emitter
    3.
    发明授权
    Method for fabricating emitter 有权
    制造发射体的方法

    公开(公告)号：US08999178B2

    公开(公告)日：2015-04-07

    申请号：US14278760

    申请日：2014-05-15

    Applicant: Hitachi High-Tech Science Corporation

    Inventor： Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Tomokazu Kozakai ,  Osamu Matsuda ,  Anto Yasaka

    IPC: C25F3/00 ,  H01J27/02 ,  H01J9/02 ,  H01J1/15 ,  H01J1/304 ,  H01J9/04 ,  H01J37/08 ,  H01J37/305 ,  H01J37/26

    CPC classification number: H01J27/02 ,  H01J1/15 ,  H01J1/3044 ,  H01J9/02 ,  H01J9/025 ,  H01J9/04 ,  H01J37/08 ,  H01J37/26 ,  H01J37/3056 ,  H01J2237/3174 ,  H01J2237/31749

    Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.

    Abstract translation: 一种用于制造尖锐的针状发射体的方法，该方法包括：电解抛光导电发射体材料的端部，使其朝其尖端部分逐渐变细; 进行第一蚀刻，其中用电荷粒子束照射发射体材料的电解抛光部分以形成具有包括尖端部分的顶点的棱锥状的锐化部分; 进行第二蚀刻，其中尖端部分通过场辅助气体蚀刻进一步锐化，同时通过场离子显微镜观察尖端部分处的晶体结构，并将尖端部分的前缘处的原子数保持在预定的 数量以下 并且加热发射体材料以将原子布置在尖锐部分的尖端部分的金字塔形状。

    Repair Apparatus
    6.
    发明申请
    Repair Apparatus 有权
    维修设备

    公开(公告)号：US20150053866A1

    公开(公告)日：2015-02-26

    申请号：US14466524

    申请日：2014-08-22

    Applicant: Hitachi High-Tech Science Corporation

    Inventor： Fumio Aramaki ,  Anto Yasaka ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Hiroshi Oba ,  Tomokazu Kozakai ,  Kazuo Aita

    IPC: G21K5/04 ,  G21K1/14 ,  H01J37/305

    CPC classification number: G21K5/04 ,  G21K1/14 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0807 ,  H01J2237/202 ,  H01J2237/31744

    Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.

    Abstract translation: 提供了一种包括气体离子源的修复装置，其包括具有尖锐尖端的离子产生部分，冷却尖端的冷却单元，通过聚焦离子束的离子聚焦而形成聚焦离子束的离子束柱 气体离子源，将待聚焦离子束照射的样品放置在其上的样品台，容纳至少其中的样品台的样品室和用于修复掩模或模具的控制单元，用于纳米 作为样品的压印光刻，由离子束柱形成的聚焦离子束。 气体离子源产生氮离子作为离子，并且尖端由能够产生离子的铱单晶构成。

    Charged particle beam apparatus and method for forming observation image
    8.
    发明授权
    Charged particle beam apparatus and method for forming observation image 有权
    带电粒子束装置及形成观察图像的方法

    公开(公告)号：US08890093B2

    公开(公告)日：2014-11-18

    申请号：US14217990

    申请日：2014-03-18

    Applicant: Hitachi High-Tech Science Corporation

    Inventor： Tomokazu Kozakai ,  Fumio Aramaki ,  Osamu Matsuda

    IPC: H01J37/30 ,  G01N23/22 ,  H01J3/14 ,  G01N23/225

    CPC classification number: G01N23/2251 ,  H01J37/265 ,  H01J37/28

    Abstract: A focused ion beam apparatus includes a lens interferometer configured to detect a relative position of an ion beam column and a sample. An image forming section includes an irradiation position specifying section configured to specify an irradiation position of an ion beam based on the detected relative position of the ion beam column and the sample, and a luminance setting section configured to set luminance of a pixel of an observation image based on the specified irradiation position of the ion beam and a detected amount of secondary particles.

    Abstract translation: 聚焦离子束装置包括被配置为检测离子束柱和样品的相对位置的透镜干涉仪。 图像形成部包括照射位置确定部，其被配置为基于检测到的离子束列和样本的相对位置来指定离子束的照射位置，以及亮度设定部，被配置为设定观察像素的亮度 基于离子束的指定照射位置的图像和二次粒子的检测量。

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