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公开(公告)号:JP2002083793A
公开(公告)日:2002-03-22
申请号:JP2001193210
申请日:2001-06-26
Applicant: IBM
Inventor: LI LEPING , BARBEE STEVEN GEORGE , LEE ERIC JAMES , MARTIN FRANCISCO A , CONN WAY
IPC: H01L21/302 , B24B37/04 , B24B49/12 , G11B5/31 , H01L21/304
Abstract: PROBLEM TO BE SOLVED: To provide a method for detecting an end point in chemical mechanical polishing(CMP) of a cloisonne structure. SOLUTION: A nitride layer 31 is stuck on the upper surface of a metal structure 21, at least and a metal oxide layer 22 is stuck on a metal structure 21 and the nitride layer 31. Next, the metal oxide layer 22 is polished using a CMP process while using a slurry, and the nitride layer 31 on the upper surface of the metal structure 21 is exposed. By polishing the nitride layer 31, ammonia is generated inside the slurry. The ammonia is extracted from the slurry as a gas, and according to the concentration of ammonia, a signal is generated. Then, according to the change of the signal, the CMP process is ended. As a suitable execution example, the metal oxide layer 22 is oxidized aluminium, the nitride layer 31 is aluminium nitride, and the nitride layer 31 is stuck on a substrate and the metal structure 21 as a conformal layer.
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公开(公告)号:GB2365808A
公开(公告)日:2002-02-27
申请号:GB0115775
申请日:2001-06-28
Applicant: IBM
Inventor: LI LEPING , BARBEE STEVEN GEORGE , LEE ERIC JAMES , MARTIN FRANCISCO A , WEI CONG
IPC: H01L21/302 , B24B37/04 , B24B49/12 , G11B5/31 , H01L21/304 , B24B49/00
Abstract: An endpoint indicating film 31 is provided between a metal oxide layer 22 overlying a substrate. During chemical mechanical polishing, the endpoint of the process is determined by extracting gaseous reaction product from the slurry (14, fig. 5) arising from a chemical reaction between the slurry (14, fig. 5) and the indicating film 31 and generating a signal in accordance with the concentration of the extracted reaction product, wherein a change in the signal indicates the endpoint. The extracted reaction product may be converted into a different product which emits chemiluminescence which is detected to provide the signal. The metal oxide layer 22 is preferably aluminium oxide, the endpoint indicating film 31 is preferably aluminium nitride and the reaction product ammonia. The method can be used to form a cloisonn’ structure.
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公开(公告)号:DE3668188D1
公开(公告)日:1990-02-15
申请号:DE3668188
申请日:1986-10-07
Applicant: IBM
Inventor: BARBEE STEVEN GEORGE , DEVINE GREGORY PAUL , PATRICK WILLIAM JOHN , SEELEY GERARD
Abstract: The system for forming a uniform layer of a material from a vapor phase onto the surface of an object at a high rate of deposition includes a reservoir (10) for heating a material from which gas is propagated; a low pressure reactor (20) wherein said layer is formed; connecting means (18) between said reservoir and said reactor; means connected to the outlet of said reactor for creating a vacuum therein and causing said gas to flow from said reservoir through said connecting means to said reactor; first pressure control means at the outlet of said reservoir for maintaining the pressure of said gas at the reservoir end of said connecting means at a first value; and second pressure control means at the inlet of said reactor for maintaining the pressure of said gas thereat at a second value by adjusting said means for creating a vacuum, thereby providing a constant mass flow rate of said gas into said reactor. The method of forming a layer of material from a gas upon the surface of an object comprises: heating a reservoir to a temperature sufficient to vaporize a material from which said gas is formed; creating a vacuum in a reactor containing said object to cause said gas to flow from said reservoir through a connecting means to said reactor; and maintaining the reservoir outlet pressure and the reactor inlet pressure at constant values, thereby providing a constant mass flow rate of said gas into said reactor.
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公开(公告)号:DE3878060T2
公开(公告)日:1993-08-12
申请号:DE3878060
申请日:1988-07-01
Applicant: IBM
Inventor: BARBEE STEVEN GEORGE , HUANG HUNG-CHANG , HUNT DONALD JOHN , KIM JUNGIHL , PARK JAE MYUNG , PERRY CHARLES HAMPTON , SHIH DA-YUAN
IPC: B32B18/00 , C03C17/22 , C03C17/23 , C03C17/245 , C04B41/50 , C04B41/87 , H01L23/15 , H05K1/03 , H01L23/14 , H01L21/48 , C23C16/30 , C23C14/34
Abstract: The article comprises a sintered ceramic, and an adherent coating of a dielectric material on at least a part of the surface of said ceramic, said coating forming a compressive layer on said part of said ceramic surface. The method for forming e.g. such articles comprises, depositing onto at least a portion of said ceramic article an adherent layer of dielectric material, said layer forming a compressive layer on cooling.
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公开(公告)号:DE3878060D1
公开(公告)日:1993-03-18
申请号:DE3878060
申请日:1988-07-01
Applicant: IBM
Inventor: BARBEE STEVEN GEORGE , HUANG HUNG-CHANG , HUNT DONALD JOHN , KIM JUNGIHL , PARK JAE MYUNG , PERRY CHARLES HAMPTON , SHIH DA-YUAN
IPC: B32B18/00 , C03C17/22 , C03C17/23 , C03C17/245 , C04B41/50 , C04B41/87 , H01L23/15 , H05K1/03 , H01L23/14 , H01L21/48 , C23C16/30 , C23C14/34
Abstract: The article comprises a sintered ceramic, and an adherent coating of a dielectric material on at least a part of the surface of said ceramic, said coating forming a compressive layer on said part of said ceramic surface. The method for forming e.g. such articles comprises, depositing onto at least a portion of said ceramic article an adherent layer of dielectric material, said layer forming a compressive layer on cooling.
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公开(公告)号:DE112020005610T5
公开(公告)日:2022-09-01
申请号:DE112020005610
申请日:2020-11-10
Applicant: IBM
Inventor: XU JING , HAN SI ER , BARBEE STEVEN GEORGE , ZHANG XUE YING , YANG JI HUI
IPC: G06N20/00
Abstract: Bereitgestellt werden ein computerrealisiertes Verfahren, System und Computerprogrammprodukt zum Verbessern einer Vorhersagegenauigkeit bei ML-Methoden. Ein Lehrer-Modell wird erzeugt, wobei das Lehrer-Modell eine Gewichtung für jeden Datenfall erzeugt. Das aktuelle Schüler-Modell wird daraufhin unter Verwendung von Trainingsdaten und der Gewichtungen trainiert, die durch das Lehrer-Modell erzeugt werden. Nach dem Trainieren des aktuellen Schüler-Modells erzeugt das aktuelle Schüler-Modell Zustandsmerkmale, die durch das Lehrer-Modell verwendet werden, um neue Gewichtungen zu erzeugen. Daraufhin wird ein Kandidaten-Schüler-Modell unter Verwendung von Trainingsdaten und dieser neuen Gewichtungen trainiert. Eine Belohnung wird durch ein Vergleichen des aktuellen Schüler-Modells mit dem Kandidaten-Schüler-Modell unter Verwendung von Trainings- und Testdaten erzeugt, die zum Aktualisieren des Lehrer-Modells verwendet werden, wenn eine Abbruchregel nicht erfüllt wurde. Nachdem eine Abbruchregel erfüllt wird, werden die durch das Lehrer-Modell erzeugten Gewichtungen als die „optimalen“ Gewichtungen betrachtet, die an den Benutzer zurückgegeben werden.
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7.
公开(公告)号:AU2020385049A1
公开(公告)日:2022-04-28
申请号:AU2020385049
申请日:2020-11-10
Applicant: IBM
Inventor: XU JING , HAN SI ER , BARBEE STEVEN GEORGE , ZHANG XUE YING , YANG JI HUI
Abstract: A computer-implemented method,system and computer program product for improving prediction accuracy in machine learning techniques. A teacher model is constructed: wherein the teacher model generates a weight for each data case.The current student model is then trained using training data and the weights generated by the teacher model. After training the current student model, the current student model generates state features: which are used by the teacher model to generate new weights. A candidate student model is then trained using training data and these new weights. A reward is generated by comparing the current student model with the candidate student model using training and testing data,which is used to update the teacher model if a stopping rule has not been satisfied. Upon a stopping rule being satisfied, the weights generated by the teacher model are deemed to be the "optimal"weights which are returned to the user.
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公开(公告)号:DE3175352D1
公开(公告)日:1986-10-23
申请号:DE3175352
申请日:1981-10-29
Applicant: IBM
Inventor: BARBEE STEVEN GEORGE , LEAS JAMES MARC , LLOYD JAMES ROBERT , NAGARAJAN ARUNACHALA
IPC: H01L29/73 , H01L21/02 , H01L21/20 , H01L21/28 , H01L21/3205 , H01L21/331 , H01L21/74 , H01L21/76 , H01L21/768 , H01L21/822 , H01L23/52 , H01L27/00 , H01L27/12 , H01L29/04 , H01L21/268
Abstract: The semiconductor device, such as a bipolar transistor, is formed in superposed layers doped with various types and concentrations of doping impurities. Said layers forming a thin monocrystalline semiconductor film (11) are supported on the surface of a substrate and contacted electrically with a conductive network on top of thin film (11). Two or several of such devices can be stacked one upon the other and interconnected electrically. Thin film (11) is produced preferably from a non-monocrystalline semiconductor film having the defined dopant distribution and a tapered region (14) terminating in a point (15). Starting at point (15) the thin film (11) is traversed with a particle beam causing the growth of a monocrystalline thin film (11). The device and method are useful in the VLSI-technology.
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