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    3.
    发明专利
    未知

    公开(公告)号：DE3686125T2

    公开(公告)日：1993-03-11

    申请号：DE3686125

    申请日：1986-10-10

    Applicant: IBM

    Inventor： BEYER KLAUS DIETRICH ,  SILVESTRI VICTOR JOSEPH

    IPC: H01L21/76 ,  H01L21/225 ,  H01L21/74 ,  H01L21/763 ,  H01L29/41 ,  H01L21/20

    Abstract: A method of simultaneously producing doped silicon filled trenches (20) in areas where a substrate contact is to be produced and trench isolation (18) in other areas. Boro­silicate glass (28) lines the sidewalls of those trenches (20) where a contact is desired and undoped epitaxially grown silicon fills all the trenches. Subsequent heat processing causes the boron in the borosilicate (28) to dope the epitaxial silicon in those trenches. In the other trenches (18), the silicon fill remains undoped except at the bottom where a channel stop (32) exists, thereby forming isolation trenches. The contacts formed over the trenches may be formed by selectively deposition of a highly doped silicon into an opening that overlies a por­tion of the trench and the adjacent substrate surface.

    5.
    发明专利
    未知

    公开(公告)号：DE3850843T2

    公开(公告)日：1995-03-09

    申请号：DE3850843

    申请日：1988-09-13

    Applicant: IBM

    Inventor： BEYER KLAUS DIETRICH ,  LU-CHEN HSU LOUIS ,  SCHEPIS DOMINIC JOSEPH ,  SILVESTRI VICTOR JOSEPH

    IPC: H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L21/20

    Abstract: A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.

    6.
    发明专利
    未知

    公开(公告)号：DE2728985A1

    公开(公告)日：1978-01-05

    申请号：DE2728985

    申请日：1977-06-28

    Applicant: IBM

    Inventor： BEYER KLAUS DIETRICH ,  DAS GOBINDA ,  POPONIAK MICHAEL ROBERT ,  YEH TSU-HSING

    IPC: H01L29/73 ,  H01L21/265 ,  H01L21/28 ,  H01L21/322 ,  H01L21/331 ,  H01L29/32

    Abstract: A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.

    PROCESS FOR FORMING SELF-ALIGNED DIELECTRIC ISOLATION
    9.
    发明专利
    PROCESS FOR FORMING SELF-ALIGNED DIELECTRIC ISOLATION 未知

    公开(公告)号：DE3279277D1

    公开(公告)日：1989-01-12

    申请号：DE3279277

    申请日：1982-03-09

    Applicant: IBM

    Inventor： BEYER KLAUS DIETRICH ,  LOGAN JOSEPH SKINNER

    IPC: H01L29/73 ,  H01L21/033 ,  H01L21/205 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L29/732

    Abstract: There is provided a process for manufacturing high density integrated circuits where transistor emitter-base isolation distances are established with high precision and, if there is any misalignment during photolithographic procedures, such misalignment occurs in a wide dielectric isolation without adverse impact on transistor performance. The process comprises: a) producing an ion-implantation resistant island on a substrate; b) growing ion-implantation resistant sidewalls on the island; c) implanting a first impurity; d) removing the sidewalls; e) implanting a second impurity where the sidewalls were; f) growing a conformal etchable coating over the surface of the device; g) masking to define an area spaced from and exterior to the area where the sidewalis were; h) removing the conformal etchable coating in the area of step g); i) etching a deep trench in the area where the conformal coating was removed; j) implanting a third impurity into the deep trench; k) filling said deep trench (47a, b) with a dielectric material. Following island removal, the emitter and base of a bipolar transistor are formed in the area where the island existed.

    10.
    发明专利
    未知

    公开(公告)号：DE3850843D1

    公开(公告)日：1994-09-01

    申请号：DE3850843

    申请日：1988-09-13

    Applicant: IBM

    Inventor： BEYER KLAUS DIETRICH ,  LU-CHEN HSU LOUIS ,  SCHEPIS DOMINIC JOSEPH ,  SILVESTRI VICTOR JOSEPH

    IPC: H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L21/20

    Abstract: A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.

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