公开(公告)号：EP1018160A4

公开(公告)日：2005-03-30

申请号：EP99939802

申请日：1999-01-29

Applicant: IBM ,  PERRAUD LAURENT CLAUDE

Inventor： GRILL ALFRED ,  JAHNES CHRISTOPHER VINCENT ,  PATEL VISHNUBHAI VITTHALBHAI ,  PERRAUD LAURENT CLAUDE

IPC: C23C16/32 ,  H01L21/312 ,  H01L21/316 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L21/76832 ,  C23C16/325 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/291 ,  H01L23/296 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/30 ,  H01L2924/00

Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film (38, 44) which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film (38, 44), specific precursor materials having a ring structure are preferred.

公开(公告)号：EP1854131A4

公开(公告)日：2011-03-30

申请号：EP06849665

申请日：2006-01-12

Applicant: IBM

Inventor： DIMITRAKOPOULOS CHRISTOS D ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL W ,  LINIGER ERIC G ,  LIU XIAO HU ,  NGUYEN SON VAN ,  NEUMAYER DEBORAH A ,  SHAW THOMAS M

IPC: H01L21/20 ,  B05C11/00 ,  B32B3/26

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

公开(公告)号：EP1570511A4

公开(公告)日：2009-06-10

申请号：EP03786848

申请日：2003-11-19

Applicant: IBM

Inventor： CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/26506 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/7624 ,  H01L21/76251 ,  Y10S438/933

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.

公开(公告)号：EP1617957A4

公开(公告)日：2007-03-28

申请号：EP04757577

申请日：2004-03-17

Applicant: IBM

Inventor： GATES STEPHEN M ,  GRILL ALFRED

IPC: C09C1/00 ,  H01L21/312 ,  H01L21/316

CPC classification number: H01L21/31695 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/249953 ,  Y10T428/249978 ,  H01L2924/00

Abstract: The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, 0 and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, 0 and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater.

公开(公告)号：JP2012109589A

公开(公告)日：2012-06-07

申请号：JP2011287303

申请日：2011-12-28

Applicant: IBM

Inventor： GATES STEPHEN M ,  GRILL ALFRED

IPC: H01L21/316 ,  C09C1/00 ,  C23C16/30 ,  C23C16/509 ,  C23C16/56 ,  H01L21/31 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide an ultra low dielectric constant (k) film which has a dielectric constant of not greater than 2.7 and exhibits improved mechanical properties such as improved elastic modulus and hardness, and also provide a method of manufacturing the film.SOLUTION: A multiphase ultra low k dielectric film 44 includes atoms of Si, C, O and H, and has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase ultra low k dielectric film 44 includes atoms of Si, C, O and H, and has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater.

公开(公告)号：JP2007036291A

公开(公告)日：2007-02-08

申请号：JP2006290010

申请日：2006-10-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GRILL ALFRED ,  MEDEIROS DAVID R ,  PATEL VISHNUBHAI V

IPC: H01L21/312 ,  H01L21/768 ,  C23C16/40 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a thermally stable low dielectric constant material having a low internal stress and a dielectric constant of not higher than 2.8. SOLUTION: A low dielectric constant material has a matrix made of Si, C, O, and H; a plurality of nanometre-scale holes, and a dielectric constant of not higher than 2.8. The low dielectric constant material has an FTIR spectrum which is divided into two peaks in absorption band of Si-O between 1,000 cm -1 and 1,100 cm -1 , and has not absorption peak of Si-H between 2,150 cm -1 and 2,250 cm -1 . COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供具有低内应力和介电常数不高于2.8的热稳定性低介电常数材料。

解决方案：低介电常数材料具有由Si，C，O和H制成的基体; 多个纳米级孔，介电常数不高于2.8。 低介电常数材料具有FTIR光谱，其在1000cm -1 SP1 -1和-100cm -1 之间的Si-O的吸收带中被分成两个峰，并且没有 2,150厘米 -1 和2,250厘米 -1之间的Si-H的吸收峰。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：WO2005040453A3

公开(公告)日：2005-08-04

申请号：PCT/EP2004052547

申请日：2004-10-14

Applicant: IBM ,  IBM UK ,  GRILL ALFRED ,  NEUMAYER DEBORAH ,  SINGH DINKAR

Inventor： GRILL ALFRED ,  NEUMAYER DEBORAH ,  SINGH DINKAR

IPC: C01B31/02 ,  C23C16/26 ,  C23C16/52 ,  C30B25/00 ,  C30B25/10 ,  C30B29/60 ,  D01F9/12 ,  H01J9/02 ,  H01L51/30 ,  H05H1/24

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/36 ,  C30B25/00 ,  C30B25/105 ,  C30B29/605 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/843

Abstract: The diameter of carbon nanotubes grown by chemical vapor deposition is controlled independent of the catalyst size by controlling the residence time of reactive gases in the reactor.

Abstract translation: 通过化学气相沉积生长的碳纳米管的直径通过控制反应性气体在反应器中的停留时间独立于催化剂尺寸来控制。

公开(公告)号：WO2004083495A3

公开(公告)日：2005-02-03

申请号：PCT/US2004008195

申请日：2004-03-17

Applicant: IBM ,  GATES STEPHEN M ,  GRILL ALFRED

Inventor： GATES STEPHEN M ,  GRILL ALFRED

IPC: C09C1/00 ,  H01L21/312 ,  H01L21/316 ,  B05D3/06 ,  B05D3/02 ,  B23B5/14 ,  B23B5/18 ,  H01L21/3105 ,  H05H1/46

CPC classification number: H01L21/31695 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/249953 ,  Y10T428/249978 ,  H01L2924/00

Abstract: The present invention provides a multiphase, ultra low k film exhibiting improved elastic modulus and hardness, and various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, represented by (104), (103), (102) and (101) respectively, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. These films consist of a first phase (100) of "host" matrix that is a random network of hydrogenated oxidize silicon carbon material (SiCOH), and a second phase (105) consisting essentially of C and H atoms.

Abstract translation: 本发明提供了具有改善的弹性模量和硬度的多相超低k膜及其形成方法。 多相超低k电介质膜分别由（104），（103），（102）和（101）表示的Si，C，O和H原子，介电常数约为2.4以下，纳米孔 或空隙，约5或更大的弹性模量和约0.7或更大的硬度。 优选的膜包括Si，C，O和H的原子，具有约2.2或更小的介电常数，纳米孔或空隙，约3或更大的弹性模量和约0.3或更大的硬度。 这些膜包括作为氢化氧化硅碳材料（SiCOH）的随机网络的第一相（100）“主体”基质和基本上由C和H原子组成的第二相（105）。

公开(公告)号：WO2011084667A2

公开(公告)日：2011-07-14

申请号：PCT/US2010060933

申请日：2010-12-17

Applicant: IBM ,  NGUYEN SON VAN ,  GRILL ALFRED ,  HAIGH THOMAS J ,  SHOBHA HOSADURGA ,  VO TUAN A

Inventor： NGUYEN SON VAN ,  GRILL ALFRED ,  HAIGH THOMAS J ,  SHOBHA HOSADURGA ,  VO TUAN A

IPC: H01L21/768 ,  H01L21/28

CPC classification number: H01L21/76849 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76867

Abstract: An interconnect structure is provided that includes a dielectric material (52) having a dielectric constant of 4.0 or less and including a plurality of conductive features (56) embedded therein. The dielectric material (52) has an upper surface that is located beneath an upper surface of each of the plurality of conductive features (56). A first dielectric cap (58) is located on the upper surface of the dielectric material (52) and extends onto at least a portion of the upper surface of each of the plurality of conductive features (56). As shown, the first dielectric cap (58) forms an interface (59) with each of the plurality of conductive features (56) that is opposite to an electrical field that is generated by neighboring conductive features. The inventive structure also includes a second dielectric cap (60) located on an exposed portion of the upper surface of each of the plurality of conductive features (56) not covered with the first dielectric cap (58). The second dielectric cap (60) further covers on an exposed surface of the first dielectric cap (58).

Abstract translation: 提供了一种互连结构，其包括介电常数为4.0或更小并且包括嵌入其中的多个导电部件（56）的介电材料（52）。 介电材料（52）具有位于多个导电部件（56）中的每一个的上表面下方的上表面。 第一电介质帽（58）位于电介质材料（52）的上表面上并且延伸到多个导电部件（56）中的每一个的上表面的至少一部分上。 如所示，第一电介质帽（58）与多个导电特征（56）中的每一个形成与由相邻导电特征产生的电场相反的界面（59）。 本发明的结构还包括位于未被第一电介质帽（58）覆盖的多个导电部件（56）中的每一个的上表面的暴露部分上的第二电介质帽（60）。 第二电介质帽（60）还覆盖在第一电介质帽（58）的暴露表面上。

公开(公告)号：JP2006216541A

公开(公告)日：2006-08-17

申请号：JP2006013182

申请日：2006-01-20

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： EDELSTEIN DANIEL C ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL ,  LIN QINGHUANG ,  MILLER ROBERT D ,  NEUMAYER DEBORAH A ,  NGUYEN SON VAN

IPC: H01B3/00 ,  C23C16/42 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures. SOLUTION: The low-k dielectric material includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si-CH 3 functional groups, and another fraction of the C atoms are bonded as Si-R-Si, wherein R is phenyl, -[CH 2 ] n -, (n is greater than or equal to 1), HC=CH, C=CH 2 , C≡C or a [S] n linkage, (n is as defined above). COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有增加的内聚强度的低k电介质材料，用于包括互连和感测结构的电子结构中。 解决方案：低k电介质材料包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH 3 S / S官能团，另一部分 的C原子键合为Si-R-Si，其中R是苯基， - （n大于或等于1） ，HC = CH，C = CH 2 ，C≡C或[S] n 键，（n如上所定义）。 版权所有（C）2006，JPO＆NCIPI