公开(公告)号：JP2006054433A

公开(公告)日：2006-02-23

申请号：JP2005183686

申请日：2005-06-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： MCDEVITT THOMAS L ,  STAMPER ANTHONY K

IPC: H01L21/768 ,  H01L21/822 ,  H01L27/04

CPC classification number: H01L21/76838 ,  H01L21/76802 ,  H01L21/76808 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a new dual damascene wiring structure that improves the efficiency of dual damascene wiring by improving a dual damascene wiring formation method. SOLUTION: This method concerns the formation of a dual damascene interconnection structure and a related structure. In this formation, the related structure includes a dual damascene wiring in a dielectric substance layer. The above dual damascene wiring is extended into the dielectric substance layer at a distance shorter than the thickness of the corresponding dielectric substance layer, and a dual damascene via bar is integrated with the bottom of the dual damascene wiring and is extended toward the bottom of the dielectric substance later from that bottom. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种新的双镶嵌布线结构，通过改进双镶嵌布线形成方法来提高双镶嵌布线的效率。

解决方案：该方法涉及形成双镶嵌互连结构和相关结构。 在该结构中，相关结构包括电介质层中的双镶嵌布线。 上述双镶嵌布线以比对应的电介质层的厚度短的距离延伸到电介质层中，并且双镶嵌通孔条与双镶嵌布线的底部一体化并且朝向底部延伸 电介质物质晚于该底部。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：DE112010003412T5

公开(公告)日：2012-08-16

申请号：DE112010003412

申请日：2010-08-12

Applicant: IBM

Inventor： STAMPER ANTHONY K ,  ANDERSON FELIX P ,  MCDEVITT THOMAS L

IPC: B81C1/00

Abstract: Integrierte MEMS-Schalter, Entwicklungsstrukturen und Verfahren zum Herstellen solcher Schalter werden bereitgestellt. Zu dem Verfahren gehört das Bilden wenigstens eines Vorsprungs (32a) von Opfermaterial (36) auf einer Seite einer Schalteinheit (34), die von dem Opfermaterial umgeben ist. Das Verfahren enthält ferner das Entfernen des Opfermaterials durch wenigstens eine Öffnung (40), die auf delteinheit gebildet wird, und das Verschließen der wenigstens einen Öffnung mit einem Deckmaterial (42).

公开(公告)号：GB2485714A8

公开(公告)日：2015-09-23

申请号：GB201203306

申请日：2010-08-12

Applicant: IBM ,  RF MICRO DEVICES INC

Inventor： ANDERSON FELIX P ,  MCDEVITT THOMAS L ,  STAMPER ANTHONY K ,  HAMMOND JONATHAN HALE ,  COSTA JULIO CARLOS

IPC: B81C1/00

Abstract: Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab (32a) of sacrificial material (36) on a side of a switching device (34) which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening (40) formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material (42).

公开(公告)号：GB2485714B8

公开(公告)日：2015-09-23

申请号：GB201203306

申请日：2010-08-12

Applicant: IBM ,  RF MICRO DEVICES INC

Inventor： ANDERSON FELIX P ,  MCDEVITT THOMAS L ,  STAMPER ANTHONY K ,  HAMMOND JONATHAN HALE ,  COSTA JULIO CARLOS

IPC: B81C1/00

公开(公告)号：CA2061119C

公开(公告)日：1998-02-03

申请号：CA2061119

申请日：1992-02-12

Applicant: IBM

Inventor： PENNINGTON SCOTT L ,  RYAN JAMES G ,  LICATA THOMAS J ,  LEE PEI-ING P ,  PARRIES PAUL C ,  MCDEVITT THOMAS L ,  STRIPPE DAVID C

IPC: C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40 ,  C23C14/34

Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.

公开(公告)号：MY127478A

公开(公告)日：2006-12-29

申请号：MYPI9704675

申请日：1997-10-06

Applicant: IBM

Inventor： COONEY EDWARD C ,  LEE HYUN K ,  MCDEVITT THOMAS L ,  STAMPER ANTHONY K

IPC: H05K1/00 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: METHOD OF IMPROVING THE RESISTANCE OF A METAL AGAINST DEGRADATION FROM EXPOSURE TO FLUORINE RELEASED FROM A FLUORINE- CONTAINING MATERIAL BY FORMING A FLUORINE-BARRIER LAYER BETWEEN THE INSULATOR MATERIAL AND THE METAL. THE INVENTION IS ESPECIALLY USEFUL IN IMPROVING CORROSION AND POISONING RESISTANCE OF METALLURGY, SUCH AS ALUMINUM METALLURGY, IN SEMICONDUCTOR STRUCTURES. THE INVENTION ALSO COVERS INTEGRATED CIRCUIT STRUCTURES MADE BY THIS METHOD. (FIG. 2F)

公开(公告)号：BR9201351A

公开(公告)日：1992-12-01

申请号：BR9201351

申请日：1992-04-13

Applicant: IBM

Inventor： LEE PEI-ING P ,  LICATA THOMAS J ,  MCDEVITT THOMAS L ,  PARRIES PAUL C ,  PENNINGTON SCOTT L ,  RYAN JAMES G ,  STRIPPE DAVID C

IPC: C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40

Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.

公开(公告)号：DE112012003959T5

公开(公告)日：2014-07-03

申请号：DE112012003959

申请日：2012-09-11

Applicant: IBM

Inventor： COONEY EDWARD C ,  GAMBINO JEFFREY P ,  HE ZHONG-XLANG ,  LIU XIAO-HU ,  MILO GARY L ,  MURPHY WILLIAM J ,  MCDEVITT THOMAS L

IPC: H01L21/4763

Abstract: Eine Einheit, die einen Isolator und Schichten auf dem Isolator aufweist. Jede der Schichten beinhaltet einen ersten Metallleiter und einen zweiten Metallleiter, der benachbart zu dem ersten Metallleiter positioniert ist. Die ersten Metallleiter beinhalten eine erste vertikal gestapelte Struktur, und die zweiten Metallleiter beinhalten eine zweite vertikal gestapelt Struktur. Zumindest ein Luftspalt ist zwischen der ersten vertikal gestapelten Struktur und der zweiten vertikal gestapelten Struktur positioniert. Der Spalt kann eine Metallfüllung beinhalten.

公开(公告)号：GB2485714B

公开(公告)日：2014-05-14

申请号：GB201203306

申请日：2010-08-12

Applicant: IBM ,  RF MICRO DEVICES INC

Inventor： ANDERSON FELIX P ,  MCDEVITT THOMAS L ,  STAMPER ANTHONY K ,  HAMMOND JONATHAN HALE ,  COSTA JULIO CARLOS

IPC: B81C1/00

公开(公告)号：GB2485714A

公开(公告)日：2012-05-23

申请号：GB201203306

申请日：2010-08-12

Applicant: IBM ,  RF MICRO DEVICES INC

Inventor： ANDERSON FELIX P ,  MCDEVITT THOMAS L ,  STAMPER ANTHONY K ,  HAMMOND JONATHAN HALE ,  COSTA JULIO CARLOS

IPC: B81C1/00

Abstract: Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab (32a) of sacrificial material (36) on a side of a switching device (34) which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening (40) formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material (42).