公开(公告)号：JP2002134926A

公开(公告)日：2002-05-10

申请号：JP2001193284

申请日：2001-06-26

Applicant: IBM

Inventor： DANIEL GEORGE BERGER ,  FAROOQ SHAJI ,  HERRON LESTER WYNN ,  HUMENIK JAMES N ,  KNICKERBOCKER JOHN ULRICH ,  PASCO ROBERT WILLIAM ,  PERRY CHARLES H ,  SACHDEV KRISHNA G

IPC: G02B6/12 ,  B32B18/00 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498 ,  H05K1/03 ,  H05K1/05 ,  H05K3/46

Abstract: PROBLEM TO BE SOLVED: To provide an organic inorganic compound electronic substrate which can be manufactured at a low cost, a compound electronic substrate wherein relative permitivity, impedance, CTE, double refraction and mutual connection stress are low, and package card reliability is high, a compound electronic substrate wherein Tg is high and thermal stability is superior, and a compound electronic substrate having low hygroscopicity. SOLUTION: A compound electronic and/or optical substrate contains polymer material and ceramic material, and has relative permitivity lower than 4 and coefficient of thermal expansion of 8-14 ppm/ deg.C at 100 deg.C. This compound substrate is composed of polymer material containing ceramic filler material or ceramic material containing polymer filler material.

公开(公告)号：DE69024263D1

公开(公告)日：1996-02-01

申请号：DE69024263

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：MY117336A

公开(公告)日：2004-06-30

申请号：MYPI20012928

申请日：2001-06-21

Applicant: IBM

Inventor： BERGER DANIEL GEORGE ,  FAROOQ SHAJI ,  HERRON LESTER WYNN ,  HUMENIK JAMES N ,  KNICKERBOCKER JOHN ULRICH ,  PASCO ROBERT WILLIAM ,  PERRY CHARLES H ,  SACHDEV KRISHNA G

IPC: B32B5/16 ,  B32B18/00 ,  G02B6/12 ,  G02B6/00 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498 ,  H05K1/03 ,  H05K1/05 ,  H05K3/46

Abstract: A COMPOSITE ELECTRONIC AND/OR OPTICAL SUBSTRATE INCLUDING POLYMERIC AND CERAMIC MATERIAL WHEREIN THE COMPOSITE SUBSTRATE HAS A DIELECTRIC CONSTANT LESS THAN 4 AND A COEFFICIENT OF THERMAL EXPANSION OF 8 TO 14 PPM/°C AT 100°C. THE COMPOSITE SUBSTRATE MAY BE EITHER CERAMIC-FILLED POLYMERIC MATERIAL OR POLYMER-FILLED CERAMIC MATERIAL. (FIGURE 1)

公开(公告)号：DE69024263T2

公开(公告)日：1996-07-11

申请号：DE69024263

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：ES2080818T3

公开(公告)日：1996-02-16

申请号：ES90480031

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：BR9001091A

公开(公告)日：1991-03-05

申请号：BR9001091

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.