公开(公告)号：DE69832324D1

公开(公告)日：2005-12-22

申请号：DE69832324

申请日：1998-04-14

Applicant: IBM

Inventor： EDWARDS DAVID LINN ,  CAMMARANO ARMANDO SALVATORE ,  COFFIN JEFFREY THOMAS ,  COURTNEY MARK GERARD ,  DROFITZ JR ,  ELLSWORTH JR ,  GOLDMANN LEWIS SIGMUND ,  IRUVANTI SUSHUMNA ,  POMPEO FRANK LOUIS ,  SABLINSKI WILLIAM EDWARD ,  SHERIF RAED A ,  TOY HILTON T

IPC: B23K35/14 ,  B23K35/26 ,  H01L21/50 ,  H01L21/60 ,  H01L23/02 ,  H01L23/10

Abstract: A scheme of providing a seal band for semi-conductor substrates and chip carriers encompasses a structure and a method that uses a multi-layer metallic seal (23) to provide protection to chips on a chip carrier. This multi-layer metal seal provides both enhanced hermeticity lifetime and environmental protection. For the preferred embodiment the multi-layer metallic seal band is a three layer, solder sandwich structure which is used to create a low cost, high reliability. hermetic seal for the module. This solder sandwich has a high melting temperature thick solder inner core (43), and lower melting point thin interconnecting solder layers (41.45). where the thin interconnecting solder layers may have similar or different melting points.

公开(公告)号：SG63520A1

公开(公告)日：1999-03-30

申请号：SG1995000347

申请日：1995-04-27

Applicant: IBM

Inventor： CALL ANSON JAY ,  POMPEO FRANK LOUIS ,  ZITZ JEFFREY ALLEN ,  MEISNER STEPHEN H

IPC: H01L23/40 ,  H01L21/58 ,  H01L23/367 ,  H01L23/42 ,  H01L23/498 ,  H01L23/64 ,  H01L23/36

Abstract: The present invention relates generally to a new apparatus and method for directly joining a chip to a heat sink. More particularly, the invention encompasses an apparatus and a method that uses a double-sided, pressure-sensitive, thermally-conductive adhesive tape to directly join a chip or similar such device to a heat sink.

公开(公告)号：DE69832324T2

公开(公告)日：2006-07-27

申请号：DE69832324

申请日：1998-04-14

Applicant: IBM

Inventor： EDWARDS DAVID LINN ,  CAMMARANO ARMANDO SALVATORE ,  COFFIN JEFFREY THOMAS ,  COURTNEY MARK GERARD ,  DROFITZ STEPHEN S ,  ELLSWORTH MICHAEL JOSEPH ,  GOLDMANN LEWIS SIGMUND ,  IRUVANTI SUSHUMNA ,  POMPEO FRANK LOUIS ,  SABLINSKI WILLIAM EDWARD ,  SHERIF RAED A ,  TOY HILTON T

IPC: B23K35/14 ,  H01L23/10 ,  B23K35/26 ,  H01L21/50 ,  H01L21/60 ,  H01L23/02

Abstract: A scheme of providing a seal band for semi-conductor substrates and chip carriers encompasses a structure and a method that uses a multi-layer metallic seal (23) to provide protection to chips on a chip carrier. This multi-layer metal seal provides both enhanced hermeticity lifetime and environmental protection. For the preferred embodiment the multi-layer metallic seal band is a three layer, solder sandwich structure which is used to create a low cost, high reliability. hermetic seal for the module. This solder sandwich has a high melting temperature thick solder inner core (43), and lower melting point thin interconnecting solder layers (41.45). where the thin interconnecting solder layers may have similar or different melting points.

公开(公告)号：MY120319A

公开(公告)日：2005-10-31

申请号：MYPI9801534

申请日：1998-04-06

Applicant: IBM

Inventor： EDWARDS DAVID LINN ,  SHERIF RAED A ,  TOY HILTON T ,  DROFITZ STEPHEN S JR ,  CAMMARANO ARMANDO SALVATORE ,  COFFIN JEFFREY THOMAS ,  COURTNEY MARK GERARD ,  ELLSWORTH MICHAEL JOSEPH JR ,  GOLDMANN LEWIS SIGMUND ,  IRUVANTI SUSHUMNA ,  POMPEO FRANK LOUIS ,  SABLINSKI WILLIAM EDWARD

IPC: B23K31/02 ,  B23K35/14 ,  B23K35/22 ,  B23K35/26 ,  H01L21/50 ,  H01L21/60 ,  H01L23/02 ,  H01L23/10

Abstract: THE PRESENT INVENTION RELATES GENERALLY TO A NEW SCHEME OF PROVIDING A SEAL BAND FOR SEMICONDUCTOR SUBSTRATES AND CHIP CARRIERS. MORE PARTICULARLY, THE INVENTION ENCOMPASSES A STRUCTURE AND A METHOD THAT USES A MULTI-LAYER METALLIC SEAL (23) TO PROVIDE PROTECTION TO CHIPS ON A CHIP CARRIER. THIS MULTI-LAYER METAL SEAL PROVIDES BOTH ENHANCED HERMETICITY LIFETIME AND ENVIRONMENTAL PROTECTION. FOR THE PREFERRED EMBODIMENT THE MULTI-LAYER METALLIC SEAL BAND IS A THREE LAYER, SOLDER SANDWICH STRUCTURE WHICH IS USED TO CREATE A LOW COST, HIGH RELIABILITY, HERMETIC SEAL FOR THE MODULE. THIS SOLDER SANDWICH HAS A HIGH MELTING TEMPERATURE THICK SOLDER INNER CORE (43), AND LOWER MELTING POINT THIN INTERCONNECTING SOLDER LAYERS (41, 45), WHERE THE THIN INTERCONNECTING SOLDER LAYERS MAY HAVE SIMILAR OR DIFFERENT MELTING POINTS. (FIGURE 3)

公开(公告)号：MY115354A

公开(公告)日：2003-05-31

申请号：MYPI9501094

申请日：1995-04-26

Applicant: IBM

Inventor： CALL ANSON JAY ,  MEISNER STEPHEN H ,  POMPEO FRANK LOUIS ,  ZITZ JEFFREY ALLEN

IPC: H01L23/40 ,  H05K3/34 ,  H01L21/58 ,  H01L23/367 ,  H01L23/42 ,  H01L23/498 ,  H01L23/64

Abstract: THE PRESENT INVENTION RELATES GENERALLY TO A NEW APPARATUS AND METHOD FOR DIRECTLY JOINING A CHIP (20) TO A HEAT SINK (10, 70, 170). MORE PARTICULARLY, THE INVENTION ENCOMPASSES AN APPARATUS AND A METHOD THAT USES A DOUBLE-SIDED, PRESSURE-SENSITIVE, THERMALLY-CONDUCTIVE ADHESIVE TAPE (42) TO DIRECTLY JOIN A CHIP OR SIMILAR SUCH DEVICE TO A HEAT SINK.

公开(公告)号：SG63843A1

公开(公告)日：1999-03-30

申请号：SG1998000886

申请日：1998-04-28

Applicant: IBM

Inventor： EDWARDS DAVID LINN ,  CAMMARANO ARMANDO SALVATORE ,  COFFIN JEFFERY THOMAS ,  COURTNEY MARK GERARD ,  DROFITZ STEPHEN S JR ,  ELLSWORTH MICHAEL JOSEPH JR ,  GOLDMANN LEWIS SIGMUND ,  IRUVANTI SUSHUMNA ,  SABLINSKI WILLIAM EDWARD ,  SHERIE RAED A ,  TOY HILTON T ,  POMPEO FRANK LOUIS

IPC: B23K35/14 ,  B23K35/26 ,  H01L21/50 ,  H01L21/60 ,  H01L23/02 ,  H01L23/10 ,  H05K3/34

Abstract: A scheme of providing a seal band for semi-conductor substrates and chip carriers encompasses a structure and a method that uses a multi-layer metallic seal (23) to provide protection to chips on a chip carrier. This multi-layer metal seal provides both enhanced hermeticity lifetime and environmental protection. For the preferred embodiment the multi-layer metallic seal band is a three layer, solder sandwich structure which is used to create a low cost, high reliability. hermetic seal for the module. This solder sandwich has a high melting temperature thick solder inner core (43), and lower melting point thin interconnecting solder layers (41.45). where the thin interconnecting solder layers may have similar or different melting points.