公开(公告)号：JPH0817790A

公开(公告)日：1996-01-19

申请号：JP14194995

申请日：1995-06-08

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  MADABU DATSUTA ,  TONII FUREDERITSUKU HAINTSU ,  REEPIN RII ,  YUUJIN HENRII RATSURAFU ,  RABUINDORA BUAAMAN SHIENOI

IPC: H01L21/66 ,  H01L21/306 ,  H01L21/3213

Abstract: PURPOSE: To provide a non-contact method and device for monitoring a chemical etching process in the device when etching a work in a wet-type chemical etching bath. CONSTITUTION: A method includes a stage for providing a base 14 with a reference surface, a stage for fixing a work 20 to the base removably, a stage for providing at least two sensors 24a and 24b so that they approach the outer periphery of the surface of the work 20 but do not contact it, and a stage for monitoring electrical characteristics between at least two sensors, thus enabling the change in the provisions of electrical characteristics to indicate the prescribed conditions of an etching process.

公开(公告)号：JP2000031102A

公开(公告)日：2000-01-28

申请号：JP11778999

申请日：1999-04-26

Applicant: IBM

Inventor： REEPIN RII ,  JAMES ALBERT GILHOOLEY ,  CLIFFORD OWEN MORGAN ,  CONN WAY ,  YU CHIENFAN ,  WILLIAM JOSEPH SALOWITZ

IPC: H01L21/302 ,  B24B37/013 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/66 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To detect end point for a target film lying on a stopper film by monitoring a reaction product during removal of the target film with a process that generates the chemical-reaction product from either the stopper film or the target film. SOLUTION: A target film is removed by a process that generates a chemical- reaction product selectively from a stopper film or from the target film. Namely, in chemical-mechanical polishing of a substrate 100 on which a target film 104 of an oxide (SiO2) lies on a stopper film 102 of a nitride (Si3N4) with slurry (mixture of micro-silica, water, and KOH), ammonium (NH3) is generated by a chemical reaction when the removal reaches the boundary 106. The level change of the ammonium in the slurry indicates that the removal reaches the underlying nitride film, and consequently, by monitoring the level of ammonium in the slurry, end point of the oxide film removal can be judged. When the end point is reached, the polishing is stopped.

公开(公告)号：JPH1056000A

公开(公告)日：1998-02-24

申请号：JP14674097

申请日：1997-06-04

Applicant: IBM

Inventor： KAARU JIEI RADENSU ,  SHINSHIA EI FUEACHIYOKU ,  REEPIN RII ,  RICHIYAADO MAASU RUJIERO ,  UIRIAMU JIYOOZEFU SUROBUITSU

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/60

Abstract: PROBLEM TO BE SOLVED: To use a device, having a nitride silicon etch-stop layer, by supplying a gas etching agent mixture containing C4 F8 , CO and inert gas in the ratio in a specified range. SOLUTION: A gate stack 10 is etched, and a side wall 13 of the gate stack 10 obtained as a result is oxidized for sticking a thin silicon nitride liner 14. Then phosphorus glass silicate is laminated by low pressure chemical vapor phase sticking, etc., as an upper layer 15 of the oxide. Then the upper layer 15 is flattened by mechanochemical polishing, etc., to form a borderless contact pattern. And the oxide upper layer 15 is dry-etched for the nitride liner 14. At this time, a gas etching agent mixture containing 0.5-5% of C4 F8 , 0-78% of CO and 18-97% of inert gas is supplied. So that a device having a silicon nitride etch-stop layer can be used.

公开(公告)号：JPH08285515A

公开(公告)日：1996-11-01

申请号：JP8621696

申请日：1996-04-09

Applicant: IBM

Inventor： REEPIN RII ,  SUTEIIBUN JIYOOJI BAABII ,  AANORUDO HARUPERIN ,  TONII FUREDERITSUKU HAINTSU

IPC: G01B7/00 ,  G01B7/06 ,  G01R31/26 ,  H01L21/302 ,  H01L21/3205 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To monitor the change in film thickness on the spot by inducing an eddy current in a film, monitoring current which changes as the thickness of the film changes, and eliminating a metal film from a semiconductor substrate. SOLUTION: A meted film 100 is formed on one surface of a wafer 102. A sensor 110 which has a circuit consisting of a capacitor 118 and a coil 114 wound around a ferrite toroid 112 is wound around the rear surface of the wafer 102. When the sensor 110 is excited by the sweeping output of a spectrum analyzer 130 via a resistor 120, a vibration current flows through the coil 114 and an eddy current is induced in the film 100 due to an alternate electromagnetic field. A sensor spectrum detected by the analyzer 130 has a resonance peak at a specific frequency related to a tank circuit and the film 100 being monitored. Then, the change in the film thickness can be monitored according to the change in peak amplitude, width, and resonance frequency due to the elimination of the film 100.

公开(公告)号：JPH0851096A

公开(公告)日：1996-02-20

申请号：JP14784295

申请日：1995-06-14

Applicant: IBM

Inventor： MAIKERU BARUKONII RAMIKA ,  SUTEIIBUN JIYOOJI BAABII ,  TONII FUREDERITSUKU HAINTSU ,  IIPIN SHIYAO ,  REEPIN RII ,  YUUJIN HENRII RATSURAFU ,  JIYASUTEIN WAI CHIYOU UON

IPC: G01N27/02 ,  H01L21/306 ,  H01L21/66

Abstract: PURPOSE: To accurately control etching by arranging two conductive electrodes in a wet-type chemical bath so that they approach but do not contact at least one wafer and monitoring electrical characteristics between the two electrodes. CONSTITUTION: When a wafer 16 to be etched is loaded into an etchant bath 18 so that it approaches but does not contact an electrode 12, the electrode and the wafer 16 perform an ohmic contact or capacity-contact with the etchant bath 18. Then, with the electrode and its surrounding impedance, an AC current or voltage (continuos or pulsive) is applied to the electrode 12 and the passed current or generated potential is monitored by an electrical characteristic monitoring means 20. An impedance analyzer or a conductive bridge is used as an electrical characteristic monitoring means 20, thus accurately controlling the electrical characteristics of the etching process without any contact and obtaining a positive etching wafer at a low cost.

公开(公告)号：JPH0831904A

公开(公告)日：1996-02-02

申请号：JP15133195

申请日：1995-06-19

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  TONII FUREDERITSUKU HAINTSU ,  REEPIN RII ,  YUUJIN HENRII RATSURAFU

IPC: C23F1/00 ,  C23F1/08 ,  G01B7/06 ,  G01N17/00 ,  G01N27/02 ,  H01L21/306 ,  H01L21/66

Abstract: PURPOSE: To remove physical restriction for preventing contamination, the reliability of contacts and reproducibility by bringing the circular coils of a power generation coil and a detection coil close to a workpiece lest they are brought into contact with one another, and monitoring the etching condition of a wafer from the electric characteristics of the workpiece between the circular coils and a wet-type chemical etchant. CONSTITUTION: A wafer 16 to be etched is put into an etchant bath 18. It is brought close to a circular coils 12 lest they are brought into contact with one another so as to avoid a damage owing to contact. While a coat is removed from the wafer 16, the impedance of the etched wafer 16 and the peripheral condition change. The change is measured by applying appropriate AC or pulse current or a voltage signal to circular coils 11 and monitoring passed current or generated potential in the circular coils 13. Consequently, the electric characteristic of an etching process can be monitored without contact and the etching of the wafer is minutely controlled.

公开(公告)号：JPH0817791A

公开(公告)日：1996-01-19

申请号：JP15129895

申请日：1995-06-19

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  TONII FUREDERITSUKU HAINTSU ,  IIPIN SHIYAO ,  REEPIN RII ,  YUUJIN HENRII RATSURAFU ,  JIYASUTEIN WAI CHIYOU UON

IPC: C23F1/00 ,  G01N17/00 ,  G01N27/02 ,  G01N29/34 ,  G01N29/42 ,  G03F7/30 ,  H01L21/306 ,  H01L21/66

Abstract: PURPOSE: To provide a non-contact method for monitoring a chemical etching process in a device in real time when etching at least one wafer during a wet- type chemical etching bath. CONSTITUTION: A stage for forming two conductive electrodes in a wet-type chemical bath so that they approach a wafer but do not contact it, a stage for monitoring electrical characteristics between two electrodes where the prescribed change of the electrical characteristics indicates the prescribed conditions of an etching process as a function of time in the etchant bath of at least one wafer, and a stage for recording a plurality of values of electrical characteristics as a function of time during etching are included. An instantaneous etching rate an average etching rate, and the etching end point can be determined from a plurality of recorded values and the corresponding time. Therefore, such method and device are useful, especially for a wet-type chemical etching station.