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公开(公告)号:DE3485758D1
公开(公告)日:1992-07-09
申请号:DE3485758
申请日:1984-10-19
Applicant: IBM DEUTSCHLAND
Inventor: ARAPS CONSTANCE JOAN , KANDETZKE STEVEN MICHAEL , TAKACS MARK ANTHONY
IPC: H01L23/29 , C08F290/00 , C08F299/02 , C08G73/10 , H01L21/312 , H01L23/31
Abstract: Thin dielectric films are formed on an electronic component by in situ curing a polymerizable oligomer which is end capped with vinyl and/or acetylenic end groups. An electronic component comprising the cured product is also disclosed.
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公开(公告)号:DE3684380D1
公开(公告)日:1992-04-23
申请号:DE3684380
申请日:1986-06-27
Applicant: IBM
Inventor: CSERVAK NANCY REBECCA , FRIBLEY SUSAN KAY , GOTH GEORGE RICHARD , TAKACS MARK ANTHONY
IPC: H01L21/76 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/312 , H01L21/762
Abstract: A semiconductor structure (30) having dielectric isolation trenches is provided with an overlaying organic polyimide layer (48) filling the deep trenches. After over-filling the trenches with the polyimide, the polyimide layer (48) is non-planar and has a thickness much larger in the low trench density regions (44) than that in the high density regions (46). A photoresist layer is then applied thereover, and controllably exposed using a mask which is the complement or inverse of the mask used for imaging the trench patterns to obtain a thick blockout photoresist mask (54,56,58,60) over the trenches and a thin wetting layer (52) of photoresist over the remainder of the substrate. Next, by means of a thermal step, the blockout photoresist is caused to reflow to form a relatively thick photoresist layer over the high trench density regions and a thin photoresist layer over the low trench density regions, thereby exactly compensating for the non-planarity of the polyimide layer.
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公开(公告)号:DE68908470T2
公开(公告)日:1994-03-17
申请号:DE68908470
申请日:1989-03-14
Applicant: IBM
Inventor: ANDERSON HERBERT RUDOLPH , BOOTH RICHARD BENTON , DAVID LAWRENCE DANIEL , NEISSER MARK OLIVER , SACHDEV HARBANS SINGH , TAKACS MARK ANTHONY
IPC: H01L23/373 , C09K5/08 , F28F13/00 , C09K5/00
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公开(公告)号:DE3485828D1
公开(公告)日:1992-08-27
申请号:DE3485828
申请日:1984-10-19
Applicant: IBM
Inventor: ARAPS CONSTANCE JOAN , KANDETZKE STEVEN MICHAEL , TAKACS MARK ANTHONY
IPC: C08F299/00 , C08F290/00 , C08F299/02 , C08G73/00 , C08G73/10 , G11C11/416 , H01B3/30 , H01L21/312 , H01L21/76 , H01L21/762 , H01L23/532 , H03F3/45 , H05K1/00 , H05K1/03 , H05K3/46 , H01L23/52
Abstract: Electronic components are disclosed comprising an insulator which is the in situ cured reaction product of a polymerizable oligomer which is end capped with a vinyl and/or acetylenic end groups. A process for forming the same is also disclosed.
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公开(公告)号:DE3586231D1
公开(公告)日:1992-07-23
申请号:DE3586231
申请日:1985-09-24
Applicant: IBM
Inventor: ARAPS CONSTANCE JOAN , CZORNYJ GEORGE , KANDETZKE STEVEN M , TAKACS MARK ANTHONY
IPC: C08G73/10 , H01L21/31 , H01L21/312 , H01L21/762 , H01L21/76
Abstract: The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imides or mixtures thereof, wherein the end groups of the polymerizable oligomer are end-capped with a vinyl or acetylenic end group.
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公开(公告)号:DE3582845D1
公开(公告)日:1991-06-20
申请号:DE3582845
申请日:1985-09-27
Applicant: IBM
Inventor: ARAPS CONSTANCE JOAN , KANDETZKE STEVEN M , KUTNER ELLEN LOIS , TAKACS MARK ANTHONY
IPC: H01L21/76 , H01L21/302 , H01L21/3065 , H01L21/312 , H01L21/762
Abstract: A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.
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公开(公告)号:DE68923717T2
公开(公告)日:1996-04-18
申请号:DE68923717
申请日:1989-02-28
Applicant: IBM
Inventor: BAISE ARNOLD IVAN , CASEY JON ALFRED , CLARKE DAVID RICHARD , DIVAKARUNI RENUKA SHASTRI , DUNKEL WERNER ERNEST , HUMENIK JAMES NOEL , KANDETZKE STEVEN MICHAEL , KIRBY DANIEL PATRICK , KNICKERBOCKER JOHN ULRICH , MATTS AMY TRESTMAN , TAKACS MARK ANTHONY , WIGGINS LOVELL BERRY
IPC: H05K1/03 , C04B41/48 , C04B41/49 , H01L21/48 , H01L23/08 , H01L23/538 , H05K3/40 , H01L23/15 , H01L23/52
Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks (33) with a flexible material (35). Uniform gaps between the metal (32) and dielectric materials (31) can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
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公开(公告)号:DE68923717D1
公开(公告)日:1995-09-14
申请号:DE68923717
申请日:1989-02-28
Applicant: IBM
Inventor: BAISE ARNOLD IVAN , CASEY JON ALFRED , CLARKE DAVID RICHARD , DIVAKARUNI RENUKA SHASTRI , DUNKEL WERNER ERNEST , HUMENIK JAMES NOEL , KANDETZKE STEVEN MICHAEL , KIRBY DANIEL PATRICK , KNICKERBOCKER JOHN ULRICH , MATTS AMY TRESTMAN , TAKACS MARK ANTHONY , WIGGINS LOVELL BERRY
IPC: H05K1/03 , C04B41/48 , C04B41/49 , H01L21/48 , H01L23/08 , H01L23/538 , H05K3/40 , H01L23/15 , H01L23/52
Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks (33) with a flexible material (35). Uniform gaps between the metal (32) and dielectric materials (31) can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
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公开(公告)号:DE68908470D1
公开(公告)日:1993-09-23
申请号:DE68908470
申请日:1989-03-14
Applicant: IBM
Inventor: ANDERSON HERBERT RUDOLPH , BOOTH RICHARD BENTON , DAVID LAWRENCE DANIEL , NEISSER MARK OLIVER , SACHDEV HARBANS SINGH , TAKACS MARK ANTHONY
IPC: H01L23/373 , C09K5/08 , F28F13/00 , C09K5/00
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公开(公告)号:DE3485828T2
公开(公告)日:1993-03-11
申请号:DE3485828
申请日:1984-10-19
Applicant: IBM
Inventor: ARAPS CONSTANCE JOAN , KANDETZKE STEVEN MICHAEL , TAKACS MARK ANTHONY
IPC: C08F299/00 , C08F290/00 , C08F299/02 , C08G73/00 , C08G73/10 , G11C11/416 , H01B3/30 , H01L21/312 , H01L21/76 , H01L21/762 , H01L23/532 , H03F3/45 , H05K1/00 , H05K1/03 , H05K3/46 , H01L23/52
Abstract: Electronic components are disclosed comprising an insulator which is the in situ cured reaction product of a polymerizable oligomer which is end capped with a vinyl and/or acetylenic end groups. A process for forming the same is also disclosed.
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