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    2.
    发明专利
    未知

    公开(公告)号：DE3684380D1

    公开(公告)日：1992-04-23

    申请号：DE3684380

    申请日：1986-06-27

    Applicant: IBM

    Inventor： CSERVAK NANCY REBECCA ,  FRIBLEY SUSAN KAY ,  GOTH GEORGE RICHARD ,  TAKACS MARK ANTHONY

    IPC: H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/312 ,  H01L21/762

    Abstract: A semiconductor structure (30) having dielectric isolation trenches is provided with an overlaying organic polyimide layer (48) filling the deep trenches. After over-filling the trenches with the polyimide, the polyimide layer (48) is non-planar and has a thickness much larger in the low trench density regions (44) than that in the high density regions (46). A photoresist layer is then applied thereover, and controllably exposed using a mask which is the complement or inverse of the mask used for imaging the trench patterns to obtain a thick blockout photoresist mask (54,56,58,60) over the trenches and a thin wetting layer (52) of photoresist over the remainder of the substrate. Next, by means of a thermal step, the blockout photoresist is caused to reflow to form a relatively thick photoresist layer over the high trench density regions and a thin photoresist layer over the low trench density regions, thereby exactly compensating for the non-planarity of the polyimide layer.

    5.
    发明专利
    未知

    公开(公告)号：DE3586231D1

    公开(公告)日：1992-07-23

    申请号：DE3586231

    申请日：1985-09-24

    Applicant: IBM

    Inventor： ARAPS CONSTANCE JOAN ,  CZORNYJ GEORGE ,  KANDETZKE STEVEN M ,  TAKACS MARK ANTHONY

    IPC: C08G73/10 ,  H01L21/31 ,  H01L21/312 ,  H01L21/762 ,  H01L21/76

    Abstract: The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imides or mixtures thereof, wherein the end groups of the polymerizable oligomer are end-capped with a vinyl or acetylenic end group.

    6.
    发明专利
    未知

    公开(公告)号：DE3582845D1

    公开(公告)日：1991-06-20

    申请号：DE3582845

    申请日：1985-09-27

    Applicant: IBM

    Inventor： ARAPS CONSTANCE JOAN ,  KANDETZKE STEVEN M ,  KUTNER ELLEN LOIS ,  TAKACS MARK ANTHONY

    IPC: H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/762

    Abstract: A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.

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