公开(公告)号：SG11202001694XA

公开(公告)日：2020-07-29

申请号：SG11202001694X

申请日：2018-12-10

Applicant: KLA TENCOR CORP

Inventor： GUTMAN NADAV ,  AMIT ERAN ,  EYRING STEFAN ,  PATHANGI SRIRAMAN HARI ,  LASKE FRANK ,  POHLMANN ULRICH ,  HEIDRICH THOMAS

IPC: G03F7/20 ,  G01N21/84 ,  H01L21/66 ,  H01L21/67

Abstract: An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.

公开(公告)号：SG11201708164YA

公开(公告)日：2017-11-29

申请号：SG11201708164Y

申请日：2016-04-19

Applicant: KLA TENCOR CORP

Inventor： LEE MYUNGJUN ,  SMITH MARK D ,  ADEL MICHAEL E ,  AMIT ERAN ,  KANDEL DANIEL

IPC: H01L21/66

Abstract: Metrology methods, modules and targets are provided, for measuring tilted device designs. The methods analyze and optimize target design with respect to the relation of the Zernike sensitivity of pattern placement errors (PPEs) between target candidates and device designs. Monte Carlo methods may be applied to enhance the robustness of the selected target candidates to variation in lens aberration and/or in device designs. Moreover, considerations are provided for modifying target parameters judiciously with respect to the Zernike sensitivities to improve metrology measurement quality and reduce inaccuracies.

公开(公告)号：SG11201913458TA

公开(公告)日：2020-07-29

申请号：SG11201913458T

申请日：2018-09-24

Applicant: KLA TENCOR CORP

Inventor： AMIT ERAN ,  MANASSEN AMNON ,  GUTMAN NADAV

IPC: G01B11/27 ,  G01N21/47 ,  G01N21/956 ,  G03F7/20 ,  H01L23/544

Abstract: Metrology targets designs, design methods and measurement methods are provided, which reduce noise and enhance measurement accuracy. Disclosed targets comprise an additional periodic structure which is orthogonal to the measurement direction along which given target structures are periodic. For example, in addition to two or more periodic structures along each measurement direction in imaging or scatterometry targets, a third, orthogonal periodic structure may be introduced, which provides additional information in the orthogonal direction, can be used to reduce noise, enhances accuracy and enables the application of machine learning algorithms to further enhance accuracy. Signals may be analyzed slice-wise with respect to the orthogonal periodic structure, which can be integrated in a process compatible manner in both imaging and scatterometry targets.

公开(公告)号：SG11202104681RA

公开(公告)日：2021-06-29

申请号：SG11202104681R

申请日：2019-08-05

Applicant: KLA TENCOR CORP

Inventor： MANASSEN AMNON ,  PASKOVER YURI ,  AMIT ERAN

IPC: G01B11/27 ,  G01B9/02 ,  G01N21/47 ,  G01N21/956 ,  G03F7/20

Abstract: Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets. Methods comprise generating a signal matrix by: illuminating a SCOL target at multiple values of at least one illumination parameter, and at multiple spot locations on the target, wherein the illumination is at a NA (numerical aperture) >1/3 yielding a spot diameter

公开(公告)号：SG11202008601TA

公开(公告)日：2020-10-29

申请号：SG11202008601T

申请日：2018-09-03

Applicant: KLA TENCOR CORP

Inventor： LAMHOT YUVAL ,  AMIT ERAN ,  PELED EINAT ,  SELLA NOGA ,  CHENG WEI-TE AARON

IPC: G03F7/20

Abstract: A method of determining overlay (“OVL”) in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and −1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the +1 and −1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels.

公开(公告)号：SG11201903730XA

公开(公告)日：2019-05-30

申请号：SG11201903730X

申请日：2017-08-21

Applicant: KLA TENCOR CORP

Inventor： AMIT ERAN ,  VOLKOVICH ROIE ,  YERUSHALMI LIRAN

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027

Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111101111011101 HIM 0110100111111111111111111111111111111111111111111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2018/089076 Al 17 May 2018 (17.05.2018) WIPO I PCT (51) International Patent Classification: (74) Agent: MCANDREWS, Kevin et al.; KLA-Tencor Corpo- GO3F 7/20 (2006.01) HO1L 21/027 (2006.01) ration, Legal Department, One Technology Drive, Milpitas, GO3F 7/00 (2006.01) California 95035 (US). (21) International Application Number: (81) Designated States (unless otherwise indicated, for every PCT/US2017/047742 kind of national protection available): AE, AG, AL, AM, (22) International Filing Date: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, 21 August 2017 (21.08.2017) CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, (25) Filing Language: English HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, (26) Publication Language: English KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, (30) Priority Data: OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, 62/421,932 14 November 2016 (14.11.2016) US SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- (84) Designated States (unless otherwise indicated, for every fornia 95035 (US). kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, (72) Inventors: AMIT, Eran; Geva 3/6 Pardes Hanna-Karkur, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, 37061 Haifa (IL). VOLKOVICH, Roie; Shderot Alexan-TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, der 10/10, 3824969 Hadera (IL). YERUSHALMI, Liran; EE, ES, FL FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, 43 Inbar, 30900 Zicron Yaacob (IL). — MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, = = _ (54) Title: LITHOGRAPHY SYSTEMS WITH INTEGRATED METROLOGY TOOLS HAVING ENHANCED FUNCTION- = ALITIES 100 = 80 80 160 170 = S S S S _ — = Metrology tool _ .. . A Metrology tool P rocess control SW Grouping of control based on landscape = _ .. . = 85 130 --... = 110, 120 ----.. \"-.. = ..... . ' = --/ - `140 ---c• 150 = IM tool = Printing tool Control 4—* module Processor(s) 9 0 105 -----) /1/ '\"----\ 112 1-1 Figure 7 IN © (;;;N (57) : Lithography systems and methods are provided with enhanced performance based on broader utilization of the integrated GC metrology tool in the printing tool to handle the metrology measurements in the system in a more sophisticated and optimized way. 0 ---- Additional operation channels are disclosed, enabling the integrated metrology tool to monitor and/or allocate metrology measurements GC thereby and by a standalone metrology tool with respect to specified temporal limitations of the printing tool; to adjust and optimize 1-1 C the metrology measurement recipes; to provide better process control to optimize process parameters of the printing tool; as well as to ei group process parameters of the printing tool according to a metrology measurements landscape. C [Continued on next page] WO 2018/089076 Al MIDEDIMOMMIDIREIDINIREHOMMIHMOVOIMIE TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))

公开(公告)号：EP2694983A4

公开(公告)日：2014-10-29

申请号：EP12768608

申请日：2012-04-04

Applicant: KLA TENCOR CORP

Inventor： KANDEL DANIEL ,  COHEN GUY ,  KLEIN DANA ,  LEVINSKI VLADIMIR ,  SAPIENS NOAM ,  SHULMAN ALEX ,  KAMENETSKY VLADIMIR ,  AMIT ERAN ,  VAKSHTEIN IRINA

IPC: G01N37/00 ,  G03F7/20

CPC classification number: G03F7/70633 ,  G01N2223/6116

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.