公开(公告)号：SG11201907074RA

公开(公告)日：2019-09-27

申请号：SG11201907074R

申请日：2018-02-27

Applicant: KLA TENCOR CORP

Inventor： GUREVICH EVGENI ,  ADEL MICHAEL E ,  GRONHEID ROEL ,  FELER YOEL ,  LEVINSKI VLADIMIR ,  KLEIN DANA ,  AHARON SHARON

IPC: H01L21/66

Abstract: 1 N 1-1 O O 1-1 00 O N C (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 07 September 2018 (07.09.2018) WIP0 I PCT IiiimmoinionotiolomomioollmiooliolomovoimIE (10) International Publication Number WO 2018/160502 Al A (51) International Patent Classification: HO1L 21/66 (2006.01) (21) International Application Number: PCT/US2018/019793 (22) International Filing Date: 27 February 2018 (27.02.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/464,382 28 February 2017 (28.02.2017) US 62/591,104 27 November 2017 (27.11.2017) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: GUREVICH, Evgeni; Hardufim Str. 12/7, 2063212 Yokneam Illit (IL). ADEL, Michael E.; 14 Yi- gal Alon Street, 30900 Ya'akov Zichron (IL). GRON- HEID, Roel; Sint Jansbergsesteenweg 83, 3001 Leuven (BE). FELER, Yoel; Derech Yad LeBanim 82/2, 32163 Haifa (IL). LEVINSKI, Vladimir; Hermon 9, 23100 Migdal HaEmek (IL). KLEIN, Dana; Alexander Yanai 23, Carmeliya, 34816 Haifa (IL). AHARON, Sharon; Yuval 40, 1796000 Hanaton (IL). (74) Agent: MCANDREWS, Kevin et al.; KLA-Tencor Corp., Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (54) Title: DETERMINING THE IMPACTS OF STOCHASTIC BEHAVIOR ON OVERLAY METROLOGY DATA MEASUREMENT MODEL CPE EIHO—W3F1

公开(公告)号：SG11201708135YA

公开(公告)日：2017-11-29

申请号：SG11201708135Y

申请日：2016-04-05

Applicant: KLA TENCOR CORP

Inventor： LEVY ADY ,  KANDEL DANIEL ,  ADEL MICHAEL E ,  POSLAVSKY LEONID ,  ROBINSON JOHN ,  MARCIANO TAL ,  BRINGOLTZ BARAK ,  GRUNZWEIG TZAHI ,  KLEIN DANA ,  ITZKOVICH TAL ,  CARMEL NADAV ,  AMIR NURIEL ,  RAMANATHAN VIDYA ,  CAMP JANAY ,  WAGNER MARK

IPC: H01L21/66 ,  G01N21/95

Abstract: A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.

公开(公告)号：WO2012015967A3

公开(公告)日：2012-05-24

申请号：PCT/US2011045603

申请日：2011-07-27

Applicant: KLA TENCOR CORP ,  COHEN GUY ,  KLEIN DANA ,  IZIKSON PAVEL

Inventor： COHEN GUY ,  KLEIN DANA ,  IZIKSON PAVEL

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/66

CPC classification number: G05B19/41875 ,  G05B2219/32182 ,  Y02P90/22

Abstract: The present invention may include performing a first measurement process on a wafer of a lot of wafers, wherein the first measurement process includes measuring one or more characteristics of a plurality of targets distributed across one or more fields of the wafer, determining a set of process tool correctables for a residual larger than a selected threshold level utilizing a loss function, wherein the loss function is configured to fit a model for one or more process tools, as a function of field position, to one or more of the measured characteristics of the plurality of targets, wherein the set of process tool correctables includes one or more parameters of the model that act to minimize the difference between a norm of the residual and the selected threshold, and utilizing the determined process tool correctables to monitor or adjust one or more processes of the process tools.

Abstract translation: 本发明可以包括在许多晶片的晶片上执行第一测量过程，其中第一测量过程包括测量分布在晶片的一个或多个场上的多个目标的一个或多个特性，确定一组过程 用于利用损失函数对于大于所选阈值水平的残差的工具可校正，其中，所述损失函数被配置为将一个或多个处理工具的模型作为场位置的函数拟合至所述测量特征中的一个或多个测量特征 多个目标，其中所述一组处理工具可校正包括所述模型的一个或多个参数，所述一个或多个参数用于最小化所述残差的标准与所选阈值之间的差异，并且利用所确定的处理工具可校正来监视或调整一个或多个 流程工具的流程。

公开(公告)号：EP2599106A4

公开(公告)日：2016-10-26

申请号：EP11813139

申请日：2011-07-27

Applicant: KLA TENCOR CORP

Inventor： COHEN GUY ,  KLEIN DANA ,  IZIKSON PAVEL

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/66

CPC classification number: G05B19/41875 ,  G05B2219/32182 ,  Y02P90/22

公开(公告)号：EP2694983A4

公开(公告)日：2014-10-29

申请号：EP12768608

申请日：2012-04-04

Applicant: KLA TENCOR CORP

Inventor： KANDEL DANIEL ,  COHEN GUY ,  KLEIN DANA ,  LEVINSKI VLADIMIR ,  SAPIENS NOAM ,  SHULMAN ALEX ,  KAMENETSKY VLADIMIR ,  AMIT ERAN ,  VAKSHTEIN IRINA

IPC: G01N37/00 ,  G03F7/20

CPC classification number: G03F7/70633 ,  G01N2223/6116

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.