公开(公告)号：GB2494824B

公开(公告)日：2015-01-14

申请号：GB201300040

申请日：2011-06-15

Applicant: IBM

Inventor： STAMPER ANTHONY K ,  JAHNES CHRISTOPHER VINCENT

IPC: H01H1/00 ,  B81C1/00 ,  H01H59/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：GB2509680A

公开(公告)日：2014-07-09

申请号：GB201408505

申请日：2012-08-14

Applicant: IBM

Inventor： HARAME DAVID L ,  STAMPER ANTHONY K

IPC: H03H3/02 ,  H03H9/10 ,  H03H9/17 ,  H03H9/56

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam (18) from a silicon layer (14) on an insulator (12). The method further includes providing a coating of insulator material (22) over the single crystalline beam. The method further includes forming a via (34a) through the insulator material exposing a wafer (10) underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material (36) in the via and over the insulator material. The method further includes providing a lid (38) on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity (42a) above the single crystalline beam and a lower cavity (42b) in the wafer, below the single crystalline beam.

公开(公告)号：DE112012004340T5

公开(公告)日：2014-07-03

申请号：DE112012004340

申请日：2012-10-03

Applicant: IBM

Inventor： LUCE STEPHEN E ,  STAMPER ANTHONY K

IPC: B81C1/00

Abstract: Es werden akustische Bulk-Wellen-Filter und/oder akustische Bulk-Resonatoren, die mit CMOS-Einheiten kombiniert sind, Verfahren zur Herstellung sowie Entwurfsstrukturen bereitgestellt. Das Verfahren beinhaltet ein Bilden von wenigstens einem Träger (44), der ein Material (29) aus amorphem Silicium aufweist, sowie ein Bereitstellen eines Isolatormaterials (32) über und benachbart zu dem Träger aus amorphem Silicium. Das Verfahren beinhaltet des Weiteren ein Bilden eines Durchkontakts (50) durch das Isolatormaterial hindurch sowie ein Freilegen eines Materials (25), das unter dem Träger (44) aus amorphem Silicium liegt. Das Verfahren beinhaltet des Weiteren ein Bereitstellen eines Opfermaterials (36) in dem Durchkontakt und über dem Träger aus amorphem Silicium. Das Verfahren beinhaltet des Weiteren das Bereitstellten eine Kappe (38) auf dem Opfermaterial und über dem Isolatormaterial. Das Verfahren beinhaltet des Weiteren ein Abführen des Opfermaterials und des darunter liegenden Materials durch die Kappe (Öffnung 40 zum Abführen) hindurch, um einen oberen Hohlraum (42a) oberhalb des Trägers aus amorphem Silicium beziehungsweise einen unteren Hohlraum (42b) unterhalb des Trägers aus amorphem Silicium zu bilden.

公开(公告)号：GB2485714B

公开(公告)日：2014-05-14

申请号：GB201203306

申请日：2010-08-12

Applicant: IBM ,  RF MICRO DEVICES INC

Inventor： ANDERSON FELIX P ,  MCDEVITT THOMAS L ,  STAMPER ANTHONY K ,  HAMMOND JONATHAN HALE ,  COSTA JULIO CARLOS

IPC: B81C1/00

公开(公告)号：GB2497641B

公开(公告)日：2014-03-26

申请号：GB201221473

申请日：2012-11-29

Applicant: IBM

Inventor： DEMUYNCK DAVID ALAN ,  CZABAJ BRIAN MATTHEW ,  STAMPER ANTHONY K

IPC: B81C1/00 ,  H01H1/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes layering metal and insulator materials on a sacrificial material formed on a substrate. The method further includes masking the layered metal and insulator materials. The method further includes forming an opening in the masking which overlaps with the sacrificial material. The method further includes etching the layered metal and insulator materials in a single etching process to form the beam structure, such that edges of the layered metal and insulator material are aligned. The method further includes forming a cavity about the beam structure through a venting.

公开(公告)号：GB2505825A

公开(公告)日：2014-03-12

申请号：GB201322198

申请日：2012-06-01

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K

IPC: B81B3/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming a wiring layer (14) on a substrate (10) comprising actuator electrodes (115) and a contact electrode (110). The method further includes forming a MEMS beam (100) above the wiring layer (14). The method further includes forming at least one spring (200) attached to at least one end of the MEMS beam (100). The method further includes forming an array of mini -bumps (105') between the wiring layer (14) and the MEMS beam (100).

公开(公告)号：GB2498261B

公开(公告)日：2013-12-11

申请号：GB201223287

申请日：2012-12-21

Applicant: IBM

Inventor： JAFFE MARK DAVID ,  ADKISSON JAMES WILLIAM ,  STAMPER ANTHONY K ,  WOLF RANDY LEE ,  CANDRA PANGLIJEN ,  GAMBINO JEFFERY P ,  DUNBAR THOMAS J

IPC: H01L41/047 ,  H01L41/107 ,  H03H9/02 ,  H03H9/64

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

公开(公告)号：DE102012221815A1

公开(公告)日：2013-06-20

申请号：DE102012221815

申请日：2012-11-29

Applicant: IBM

Inventor： JAHNES CHISTOPHER V ,  STAMPER ANTHONY K

IPC: B81C1/00 ,  B81B7/02 ,  H01L21/66

Abstract: Es werden Kondensatoreinheiten mit mikroelektromechanischer Struktur (MEMS), eine Kondensatortrimmung für MEMS-Kondensatoreinheiten und Design-Strukturen offenbart. Das Verfahren weist das Identifizieren einer Verfahrensschwankung in Bezug auf eine Bildung von Kondensatoreinheiten mit mikroelektromechanischer Struktur (MEMS) über ein Substrat auf. Das Verfahren weist ferner das Bereitstellen von Design-Veränderungen oder Verfahrensveränderungen in Elektrodenflächen der MEMS-Kondensatoreinheiten über das Substrat auf der Grundlage der identifizierten Verfahrensschwankung auf.

公开(公告)号：GB2494359A

公开(公告)日：2013-03-06

申请号：GB201300085

申请日：2011-06-08

Applicant: IBM

Inventor： HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

IPC: B81C1/00 ,  H01H57/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60b) includes forming a first sacrificial cavity layer (18) over a wiring layer (14) and substrate (10). The method further includes forming an insulator layer (40) over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity (60b) of the MEMS.

公开(公告)号：GB2494355A

公开(公告)日：2013-03-06

申请号：GB201300041

申请日：2011-06-15

Applicant: IBM

Inventor： STAMPER ANTHONY K ,  JAHNES CHRISTOPHER VINCENT

IPC: B81C1/00 ,  H01H57/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System(MEMS) cavity includes forming a first sacrificial cavity layer over a lower wiring layer. The method further includes forming a layer. The method further includes forming a second sacrificial cavity layer over the first sacrificial layer and in contact with the layer. The method further includes forming a lid on the second sacrificial cavity layer. The method further includes forming at least one vent hole in the lid, exposing a portion of the second sacrificial cavity layer. The method further includes venting or stripping the second sacrificial cavity layer such that a top surface of the second sacrificial cavity layer is no longer touching a bottom surface of the lid, before venting or stripping the first sacrificial cavity layer thereby forming a first cavity and second cavity, respectively.