Abstract:
PURPOSE: A method for manufacturing an electron emitting device and a method for manufacturing an image display device are provided to improve the quality of a display image in the image display device by obtaining a stable current emitted from the electron emitting device. CONSTITUTION: A metal oxide layer(4) including the same metal oxide as the metal included in a structure body is formed. The substrate including the metal is installed. A low work function layer(5) is installed on the metal oxide layer and is made of multi crystalline layers.
Abstract:
본 발명은 필드에미션 디스플레이 소자의 제조방법에 관한 것으로 전자방출음극과 게이트 전극의 간격을 적절히 조절할 수 있으며 균일한 형상을 갖는 전자방출음극을 형성하는 방법을 포함하는 필드 에미션 디스플레이 소자의 제조방법에 관한 것이다. 상술한 본 발명의 특징은 트렌치의 측벽을 통해 노출된 게이트 전극용 막을 열산화하여 열산화막을 형성하고 전자방출음극을 정의하기 위한 식각공정시 상기 게이트 전극의 측면에 형성되어 있는 열산화막을 제거함으로써 게이트 전극과 게이트 절연막을 공간적으로 분리한다. 이러한 방법에 따르면 게이트 전극의 측면에 형성되는 열산화막을 정밀하게 제어할 수 있어 게이트 전극과 전자방출음극간의 간격을 정확하게 조절할 수 있으며, 전자방출음극의 형상을 균일화할 수 있다.
Abstract:
The present invention provides an electron emitting device that includes a cathode, and a gate onto which electrons field-emitted from the cathode are irradiated. The gate includes at least a layer containing molybdenum and oxygen provided at a portion onto which the electrons field-emitted from the cathode are irradiated. The layer has peaks in a range of 397 eV through 401 eV, a range of 414 eV through 418 eV, a range of 534 eV through 538 eV, and a range of 540 eV through 547 eV, respectively, in a spectrum measured by electron energy loss spectroscopy using a transmission electron microscope.
Abstract:
An electron beam apparatus is provided having an electron emitting device which has a simple configuration, exhibits high electron emission efficiency, operates stably, and in which emitted electrons are effectively converged. The electron beam apparatus includes: an insulator having a notch on its surface; a gate positioned on the surface of the insulator; at least one cathode having a protruding portion protruding from an edge of the notch toward the gate, and positioned on the surface of the insulator so that the protruding portion is opposed to the gate; and an anode arranged to be opposed to the protruding portion via the gate, wherein the gate is formed on the surface of the insulator so that at least a part of a region opposed to the cathode is projected outward and recessed portions are provided in which ends of the gate are recessed and interpose the projected region.
Abstract:
A device includes a substrate, an insulating member disposed on a surface of the substrate, a gate, and a cathode. The insulating member has an upper surface apart from the surface of the substrate, and a side surface rising from the surface of the substrate between the upper surface and the surface of the substrate. The gate is disposed on the upper surface of the insulating member. The cathode is disposed on the side surface of the insulating member and has a portion opposing the gate. The side surface of the insulating member on which the cathode is disposed has a protruding portion protruding from an imaginary line connecting a position where the portion opposing the gate lies and a position where the insulating member rises from the surface of the substrate.
Abstract:
The electron-emitting device is configured such that an inclination angle θ2 of a lower portion from a height-direction intermediate portion to the lower end is larger than the inclination angle θ1 of an upper portion from a lower edge of the concave portion to a height-direction intermediate portion. And, an electric resistance of a lower cathode portion which is a portion of the lower portion of the cathode is larger than that of an upper cathode portion which is a portion of the upper portion of the cathode.
Abstract:
An electron-emitting device has at least a cathode electrode, an electron-emitting member which is electrically connected to the cathode electrode, and a resistive layer which is provided between the cathode electrode and the electron-emitting member. The resistive layer is composed of the same material as that of the electron-emitting member, and film density of the resistive layer is lower than film density of the electron-emitting member.
Abstract:
Provided is an electron-emitting device including an insulating member and a gate stacked on a substrate. A cathode is disposed on a side surface of the insulating member. The cathode has a plurality of protrusions provided along a corner of the insulating member. The gate has a plurality of protrusions extending toward the cathode.
Abstract:
A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.