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公开(公告)号：KR100449856B1
公开(公告)日：2004-09-22
申请号：KR1020010071462
申请日：2001-11-16
Applicant: 한국전자통신연구원
IPC: H05B33/22
CPC classification number: H05B33/22
Abstract: 본 발명은 구동전압을 낮추고 고해상도를 구현하기 위한 박막전계발광소자에 관한 것으로, 본 발명의 직류구동형 박막전계발광소자는 박막형광층과 금속전극의 사이에 상기 박막형광층에 접하는 박막에너지장벽층과 상기 금속전극에 접하는 박막전류제한층이 적층된 박막전류제어층을 삽입되며, 본 발명의 교류구동형 박막전계발광소자는 박막형광층의 상,하부에 박막에너지장벽층과 박막전류제한층이 적층된 박막전류제어층이 삽입되되, 상기 박막에너지장벽층은 상기 박막형광층에 접하여 이루어진다.
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公开(公告)号：KR1020040041730A
公开(公告)日：2004-05-20
申请号：KR1020020069586
申请日：2002-11-11
Applicant: 한국전자통신연구원
IPC: H01S5/30
CPC classification number: H01L33/145 , H01S5/18308 , H01S5/18316 , H01S5/18347 , H01S5/3095 , H01S2301/176
Abstract: PURPOSE: A semiconductor optical device provided with a current confined structure is provided to secure the reliability by reducing the leakage current at the etched surface with filling an oxide layer or a nitride layer. CONSTITUTION: A semiconductor optical device provided with a current confined structure includes a semiconductor substrate(10), a first semiconductor layer(12), a second semiconductor layer(14), a third semiconductor layer(16). The first semiconductor layer(12) is formed on the semiconductor substrate(10) and made of at least one first conductive type of material. The second semiconductor layer(14) is formed on the first semiconductor layer(12) and is made of at least one material. The third semiconductor layer(16) is formed on the second semiconductor layer(16) and is made of at least one second conductive type of material which is opposite to the first conductive type. The first to third semiconductor layers(12,14,16) form the mesa structure, the side surface of at least one material layer constituting the first to third semiconductor layers(12,14,16) is recessed and the recessed portion is filled with oxide layer or a nitride layer, partially or totally.
Abstract translation: 目的：提供一种具有电流限制结构的半导体光学器件，以通过减少在蚀刻表面处的填充氧化物层或氮化物层的漏电流来确保可靠性。 构成：设置有电流限制结构的半导体光学器件包括半导体衬底（10），第一半导体层（12），第二半导体层（14），第三半导体层（16）。 第一半导体层（12）形成在半导体衬底（10）上并由至少一种第一导电类型的材料制成。 第二半导体层（14）形成在第一半导体层（12）上并且由至少一种材料制成。 第三半导体层（16）形成在第二半导体层（16）上并且由与第一导电类型相反的至少一种第二导电类型的材料制成。 第一至第三半导体层（12,14,16）形成台面结构，构成第一至第三半导体层（12,14,16）的至少一个材料层的侧表面是凹进的，并且凹陷部分填充有 氧化物层或氮化物层，部分或全部。
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公开(公告)号：KR100430565B1
公开(公告)日：2004-05-10
申请号：KR1020010030361
申请日：2001-05-31
Applicant: 한국전자통신연구원
IPC: C09K11/64
Abstract: PURPOSE: A fluorescent substance, its preparation method and an electroluminescence, cathodoluminescence and display device using the substance are provided, to improve the luminescence property and the crystallinity of the fluorescent substance. CONSTITUTION: The fluorescent substance comprises a body material comprising MS layer(110); 5 mol% or less of an Al2S3 thin film(120) which is formed in the body material by atom layer evaporation method and acts as flux; and a luminescence central ion X(130) (wherein X is a transition metal or a rare earth metal). In the MS, M is at least one selected from the group consisting of Ca, Sr, Zn, Ba and Mg. Preferably the Al2S3 forms MxAlySz in the body material to constitute the MxAlyXz:X structure, wherein x is 1-5; y is 2-4; z is 4-8. Preferably the MxAlyXz:X is CaAl2S4:Ce3+.
Abstract translation: 目的：提供荧光物质，其制备方法和使用该物质的电致发光，阴极发光和显示装置，以改善荧光物质的发光性质和结晶性。 构成：荧光物质包括含有MS层（110）的主体材料; 通过原子层蒸镀法在主体材料中形成的Al 2 S 3薄膜（120）为5摩尔％以下，作为助熔剂起作用; 和发光中心离子X（130）（其中X是过渡金属或稀土金属）。 在MS中，M是选自Ca，Sr，Zn，Ba和Mg中的至少一种。 优选地，Al2S3在主体材料中形成MxAlySz以构成MxAlyXz：X结构，其中x是1-5; y是2-4; z是4-8。 优选MxAlyXz：X是CaAl2S4：Ce3 +。
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公开(公告)号：KR1020030065262A
公开(公告)日：2003-08-06
申请号：KR1020020025366
申请日：2002-05-08
IPC: H01J1/30
Abstract: PURPOSE: A metal-insulator-metal emitter and a method for manufacturing the same are provided to reduce procedures and shorten the process time, while achieving improved characteristics. CONSTITUTION: A method for manufacturing a metal-insulator-metal emitter comprises the steps of forming a first electrode on a substrate; forming an insulating film on the first electrode through an atomic layer deposition; and forming a second electrode on the insulating film. The step of forming the insulating film includes a first step(S101) of disposing the substrate with the first electrode in a chamber; a second step(S103) of injecting a carrier gas and trimethyl aluminum in the chamber; a third step(S105) of removing the residual particles by injecting nitrogen or inert gas; a fourth step(S107) of forming an aluminum oxide thin film by injecting water or ozone for surface chemical reaction between the water and the trimethyl aluminum; and a fifth step(S109) of removing the residual particles by injecting nitrogen or inert gas.
Abstract translation: 目的：提供一种金属 - 绝缘体 - 金属发射器及其制造方法，以减少工艺并缩短工艺时间，同时实现改进的特性。 构成：制造金属 - 绝缘体 - 金属发射体的方法包括以下步骤：在衬底上形成第一电极; 通过原子层沉积在第一电极上形成绝缘膜; 以及在所述绝缘膜上形成第二电极。 形成绝缘膜的步骤包括：将具有第一电极的基板设置在室中的第一步骤（S101） 在所述室中注入载气和三甲基铝的第二步骤（S103） 通过注入氮气或惰性气体去除残留颗粒的第三步骤（S105）; 通过在水和三甲基铝之间注入水或臭氧进行表面化学反应形成氧化铝薄膜的第四步骤（S107）; 以及通过注入氮气或惰性气体除去残留颗粒的第五步骤（S109）。
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公开(公告)号：KR1020020043161A
公开(公告)日：2002-06-08
申请号：KR1020010071462
申请日：2001-11-16
Applicant: 한국전자통신연구원
IPC: H05B33/22
CPC classification number: H05B33/22
Abstract: PURPOSE: A thin film electro luminescent device having a current control layer is provided to reduce a driving voltage and improve luminescent efficiency and resolution. CONSTITUTION: A thin film electro luminescent device having a current control layer comprises a transparent electrode(22), a thin film fluorescent layer(23), a thin film current control layer(26) and metal electrodes(27), sequentially layered on a transparent substrate(21). A pulse type DC power supplying apparatus(28) applies a positive voltage pulse to the transparent electrode(22) relative to the metal electrodes(27). The thin current control layer(26) includes a thin film energy barrier layer(24) and many thin current restriction layers(25). The thin current restriction layers(25) are etched to have a same width as the metal electrodes(27) to form on the thin film energy barrier layer(24).
Abstract translation: 目的：提供具有电流控制层的薄膜电致发光器件以降低驱动电压并提高发光效率和分辨率。 构成：具有电流控制层的薄膜电致发光器件包括透明电极（22），薄膜荧光层（23），薄膜电流控制层（26）和金属电极（27） 透明基板（21）。 脉冲型直流供电装置（28）相对于金属电极（27）对透明电极（22）施加正电压脉冲。 薄电流控制层（26）包括薄膜能量阻挡层（24）和许多薄电流限制层（25）。 蚀刻薄电流限制层（25）以具有与金属电极（27）相同的宽度，以在薄膜能量阻挡层（24）上形成。
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Patent Agency Ranking
公开(公告)号：KR1020010054537A
公开(公告)日：2001-07-02
申请号：KR1019990055386
申请日：1999-12-07
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A multi-layered white fluorescent film having same base material and an AC drive type TFELD(thin film electroluminescent device) using the same are provided to be capable of easily adjusting voltage required to lighten the electroluminescent device and of improving blue color purity and brightness portions to realize white color having wide color gamut. CONSTITUTION: The white fluorescent film has a laminated structure of a CaS:Pb blue fluorescent film(4), a CaS:Pb green fluorescent film(5) and a CaS:Eu red fluorescent film(6). The AC drive type TFELD has a laminated structure in which a transparent electrode(2), a lower insulator(3), the white fluorescent film(4,5,6) of multi-layered structure, an upper insulator(7) and a metal electrode(8) are sequentially stacked on a transparent substrate(1). An ITO(Indium tin oxide) or ZnO:Al(aluminum-doped zinc oxide) is used as the transparent electrode(2), and Au or Al having an excellent reflective factor can be as the metal electrode(8).
Abstract translation: 目的：提供具有相同基材的多层白色荧光膜和使用其的交流驱动型TFELD（薄膜电致发光器件），以便能够容易地调节减轻电致发光器件所需的电压和提高蓝色纯度， 亮度部分实现具有宽色域的白色。 构成：白色荧光膜具有CaS：Pb蓝色荧光膜（4），CaS：Pb绿色荧光膜（5）和CaS：Eu红色荧光膜（6）的层叠结构。 交流驱动型TFELD具有层叠结构，其中透明电极（2），下绝缘体（3），多层结构的白色荧光膜（4,5,6），上绝缘体（7）和 金属电极（8）依次层叠在透明基板（1）上。 使用ITO（氧化铟锡）或ZnO：Al（掺铝的氧化锌）作为透明电极（2），具有优异的反射率的Au或Al可以作为金属电极（8）。
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公开(公告)号：KR102086626B1
公开(公告)日：2020-03-11
申请号：KR1020120133471
申请日：2012-11-23
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
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公开(公告)号：KR101827496B1
公开(公告)日：2018-02-09
申请号：KR1020120013203
申请日：2012-02-09
Applicant: 한국전자통신연구원
IPC: G02F1/01
CPC classification number: G09G5/10 , G02B5/201 , G02B26/001 , G02F1/157 , G02F2201/44 , G09G3/2003 , G09G3/22 , G09G3/3208 , G09G3/3466 , G09G3/3473 , G09G5/00 , G09G2300/023 , G09G2300/0452 , G09G2300/046
Abstract: 투사되는빛의세기에따라자체적으로빛을방출하는제1모드또는상기투사되는빛을선택적으로반사하는제2모드로동작하여투사되는빛에세기에관계없이높은시인성을가지는듀얼모드동작픽셀을제안한다. 본발명에의한듀얼모드동작픽셀은상부에자발광소자가형성된제1멤브레인(membrane), 상기제1멤브레인및 상기하나이상의멤브레인하부에상기제1멤브레인및 상기하나이상의멤브레인과이격하여형성되는하부층을포함하고, 제1모드동작시상기자발광소자를구동하여빛을방출하고, 제2모드동작시상기제1멤브레인및 상기하나이상의멤브레인과상기하부층사이에서발생하는빛의간섭을이용하여투사되는빛을선택적으로반사한다.
Abstract translation: 建议无论强度的具有高能见度通过操作第一模式或投影光通过本身根据光的强度来发射光被投影到被投影作为可选第二模式用于反射光的双模式操作，像素 的。 的双模式操作，下层像素是自发光元件的上半部分，所述第一膜（膜）中，所述第一膜和由所述一个或多个膜的下方形成所述第一膜和从本发明形成的至少一个膜隔开 其中第一操作模式包括驱动发光元件发光并且基于在膜与膜和下层中的至少一个之间产生的光的干涉产生第二操作模式， 中反映出来。
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公开(公告)号：KR101818673B1
公开(公告)日：2018-01-17
申请号：KR1020110103231
申请日：2011-10-10
Applicant: 한국전자통신연구원 , 건국대학교 산학협력단
CPC classification number: H02M3/073 , G09G3/3696 , H02M2003/077
Abstract: 본발명은액정표시장치의직류전압변환회로에관한것으로서, 복수의박막트랜지스터를포함하고, 상기복수의박막트랜지스터가교대로온오프되어액정표시장치를구동하기위한전압을출력하는주 펌핑회로부; 및클럭신호반전에의해상기복수의박막트랜지스터의게이트에인가되는전압을제어하는스위치제어신호발생부를포함하되, 각각의박막트랜지스터는양의게이트-소스전압이인가되어온되고, 음의게이트-소스전압이인가되어오프되는것을특징으로한다.
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公开(公告)号：KR101783933B1
公开(公告)日：2017-10-11
申请号：KR1020100116736
申请日：2010-11-23
Applicant: 한국전자통신연구원
IPC: G11C11/22
CPC classification number: G11C11/22
Abstract: 강유전체트랜지스터, 강유전체트랜지스터와전기적으로결합된복수의스위칭소자, 및복수의스위칭소자를제어하기위한각각의제어신호를각각의스위칭소자에게전달하기위한복수의제어라인을포함하고, 강유전체트랜지스터의각 전극이플로팅(floating)되지않도록, 복수의스위칭소자가각각의제어신호에기초하여개별적으로제어되도록구성되는메모리셀이제공된다.
Abstract translation: 一个铁电晶体管，与该铁电晶体管电耦合的多个开关元件，以及多个控制线，用于将用于控制该多个开关元件的各个控制信号传输到各个开关元件， 控制多个开关元件以便基于各个控制信号单独控制以不浮动。
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