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    MONOLITHIC FABRICATION OF THERMALLY ISOLATED MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICES
    121.
    发明授权
    MONOLITHIC FABRICATION OF THERMALLY ISOLATED MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICES 有权
    热分离微电子机械系统（MEMS）器件的整体制造

    公开(公告)号：EP3095755B1

    公开(公告)日：2017-07-26

    申请号：EP16168459.2

    申请日：2016-05-04

    Applicant: Honeywell International Inc.

    Inventor： REINKE, John ,  LODDEN, Grant

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0019 ,  B81B3/0081 ,  B81B7/0087 ,  B81B2201/0228 ,  B81B2201/025 ,  B81C1/0069 ,  H02N1/00

    Abstract: A method for fabricating a thermally isolated microelectromechanical system (MEMS) structure is provided. The method includes processing a first wafer of a first material with a glass wafer to form a composite substrate including at least one sacrificial structure of the first material and glass; forming a MEMS device in a second material; forming at least one temperature sensing element on at least one of: the composite substrate; and the MEMS device; and etching away the at least one sacrificial structure of the first material in the composite substrate to form at least one thermally isolating glass flexure. The MEMS device is thermally isolated on a thermal isolation stage by the at least one thermally isolating glass flexure. The at least one temperature sensing element in on a respective at least one of: the thermal isolation stage; and the MEMS device.

    Abstract translation: 提供了一种用于制造热隔离微机电系统（MEMS）结构的方法。 该方法包括用玻璃晶片处理第一材料的第一晶片以形成包括第一材料和玻璃的至少一个牺牲结构的复合衬底; 以第二材料形成MEMS器件; 在至少一个复合衬底上形成至少一个温度传感元件; 和MEMS器件; 以及蚀刻掉复合衬底中的第一材料的至少一个牺牲结构以形成至少一个热隔离玻璃弯曲部。 MEMS器件通过至少一个热绝缘玻璃挠曲件在热绝缘台上热隔离。 所述至少一个温度感测元件位于热隔离级中的相应的至少一个上： 和MEMS器件。

    LOW PRESSURE SENSOR AND FLOW SENSOR
    122.
    发明公开
    LOW PRESSURE SENSOR AND FLOW SENSOR 审中-公开
    NIEDERDRUCKSENSOR UND FLUSSSENSOR

    公开(公告)号：EP3095754A1

    公开(公告)日：2016-11-23

    申请号：EP16169090.4

    申请日：2016-05-11

    Applicant: Amphenol Thermometrics, Inc.

    Inventor： Belov, Nickolas S. ,  Li, Lihua ,  Vu, Kim ,  Vu, Dinh

    IPC: B81B3/00

    CPC classification number: G01L19/147 ,  B81B3/0021 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0109 ,  G01L9/0047 ,  G01L9/0048 ,  G01L19/0618

    Abstract: A device/method for sensing a physical parameter, including a sensor die and a stress-sensitive circuit. The sensor die includes a semiconductor substrate and a cavity that creates an elastic element that bends in response to the physical parameter exerted on the sensor die. The elastic element includes at least at least one rigid island formed within the cavity, a thin area surrounding the at least one rigid island and having smaller thickness than the rigid island, and at least one stress concentrator at least partially formed in the thin area of the elastic element on the side of the substrate opposite the cavity. The stress-sensitive circuit includes at least one stress-sensitive component formed in the thin area of the elastic element. The at least one stress concentrator increases stress in the locations of the at least one stress-sensitive component resulting in an increase of the device sensitivity to the physical parameter.

    Abstract translation: 一种用于感测物理参数的装置/方法，包括传感器管芯和应力敏感电路。 传感器管芯包括半导体衬底和空腔，其产生响应于施加在传感器管芯上的物理参数而弯曲的弹性元件。 所述弹性元件包括形成在所述空腔内的至少一个刚性岛，围绕所述至少一个刚性岛的薄区，并且具有比所述刚性岛更小的厚度，以及至少部分地形成在所述刚性岛的薄区域中的至少一个应力集中器 衬底侧的弹性元件与空腔相对。 应力敏感电路包括形成在弹性元件的薄区域中的至少一个应力敏感元件。 所述至少一个应力集中器增加所述至少一个应力敏感部件的位置的应力，从而导致对所述物理参数的装置灵敏度的增加。

    Systems and methods for mounting inertial sensors
    126.
    发明公开
    Systems and methods for mounting inertial sensors 有权
    Systeme und Verfahren zur Montage von Inertial-Sensoren

    公开(公告)号：EP2413146A1

    公开(公告)日：2012-02-01

    申请号：EP11175124.4

    申请日：2011-07-22

    Applicant: Honeywell International, Inc.

    Inventor： Eskridge, Mark

    IPC: G01P1/02 ,  G01P15/08 ,  G01P15/18 ,  B81B7/00

    CPC classification number: G01P1/023 ,  B81B7/0074 ,  B81B2201/0235 ,  B81B2201/025 ,  G01C19/5783 ,  G01P15/0802 ,  G01P15/18 ,  H01L2224/16225 ,  H01L2924/1461 ,  H01L2924/00

    Abstract: Systems and methods for mounting inertial sensors on a board 64. On a wafer containing one or more sensor packages having a substrate layer 32, 34, a sensor layer 24 and an insulator layer 26, 28 located between the sensor layer and the substrate layer, a V-groove is anisotropically etched into one of the substrate layer. The substrate layer is in the 100 crystal plane orientation. The sensor package is then separated from the wafer. Then, a surface of the substrate layer formed by the etching is attached to a board. In one example, three sensor packages are mounted to the board so that their sense axis are perpendicular to each other.

    Abstract translation: 用于将惯性传感器安装在板64上的系统和方法。在包含一个或多个传感器封装的晶片上，该传感器封装具有位于传感器层和基底层之间的基底层32,34，传感器层24和绝缘体层26,28， 将V形槽各向异性地蚀刻到衬底层之一中。 基底层的晶体面取向为100。 然后将传感器封装与晶片分离。 然后，通过蚀刻形成的基板层的表面附着在基板上。 在一个示例中，三个传感器封装被安装到板上，使得它们的感测轴线彼此垂直。

    MICRO ELECTRO MECHANICAL SYSTEM
    127.
    发明公开
    MICRO ELECTRO MECHANICAL SYSTEM 有权
    微机电系统

    公开(公告)号：EP2327960A1

    公开(公告)日：2011-06-01

    申请号：EP09808178.9

    申请日：2009-08-05

    Applicant: Hitachi, Ltd.

    Inventor： DEGAWA, Munenori ,  JEONG, Heewon

    IPC: G01C19/56 ,  B81B3/00 ,  G01P9/04 ,  G01P15/125

    CPC classification number: G01C19/5733 ,  B81B3/0072 ,  B81B2201/025 ,  B81B2203/0109 ,  G01C19/5712 ,  G01P1/003 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    Abstract: In order to provide a technology capable of suppressing degradation of measurement accuracy due to fluctuation of detection sensitivity of an MEMS by suppressing fluctuation in natural frequency of the MEMS caused by a stress, first, fixed portions 3a to 3d are displaced outward in a y-direction of a semiconductor substrate 2 by deformation of the semiconductor substrate 2. Since a movable body 5 is disposed in a state of floating above the semiconductor substrate 2, it is not affected and displaced by the deformation of the semiconductor substrate 2. Therefore, a tensile stress (+σ 1 ) occurs in the beam 4a and a compressive stress (-σ 2 ) occurs in the beam 4b. At this time, in terms of a spring system made by combining the beam 4a and the beam 4b, increase in spring constant due to the tensile stress acting on the beam 4a and decrease in spring constant due to the compressive stress acting on the beam 4b are offset against each other.

    Process for manufacturing thick suspended structures of semiconductor material
    130.
    发明公开
    Process for manufacturing thick suspended structures of semiconductor material 有权
    制造厚悬浮结构的方法，由半导体材料制成

    公开(公告)号：EP1770055A1

    公开(公告)日：2007-04-04

    申请号：EP05425676.3

    申请日：2005-09-28

    Applicant: STMicroelectronics S.r.l.

    Inventor： Corona, Pietro ,  Villa, Flavio Francesco ,  Barlocchi, Gabriele

    IPC: B81B3/00

    CPC classification number: B81C1/00158 ,  B81B2201/025 ,  B81B2203/0109 ,  B81B2203/0315

    Abstract: A process for manufacturing a suspended structure (20) of semiconductor material envisages the steps of: providing a monolithic body (10) of semiconductor material having a front face (10a); forming a buried cavity (17) within the monolithic body (10), extending at a distance from the front face (10a) and delimiting, with the front face (10a), a surface region (18) of the monolithic body (10), said surface region (18) having a first thickness (w 1 ); carrying out a thickening thermal treatment such as to cause a migration of semiconductor material of the monolithic body (10) towards the surface region (18) and thus form a suspended structure (20) above the buried cavity (17), the suspended structure (20) having a second thickness (w 2 ) greater than the first thickness (w 1 ). The thickening thermal treatment is an annealing treatment.

    Abstract translation: 一种用于制造半导体材料的悬浮结构（20）方法设想的以下步骤：提供半导体材料的整体式主体（10），其具有前表面（10A）; 形成在从所述前表面（10a）的延伸一段距离并限定，与所述整体式主体的前表面（10a）中，表面区域（18）的整体式主体内的掩埋空腔（17）（10）（10） 具有第一厚度（W 1）所述的表面区域（18）; 进行增稠热处理：如，以使整体式主体（10）朝向所述表面区域（18）并且因此半导体材料的迁移形成掩埋空腔（17）之上的悬挂结构（20），所述悬挂结构（ 20）具有第二厚度（W 2）比所述第一厚度更大的（W 1）。 增稠热处理是退火处理。

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