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    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES
    131.
    发明公开
    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES 有权
    用于生产机电MICRO SWITCH CMOS兼容SUBSTRATES

    公开(公告)号：EP1461828A4

    公开(公告)日：2005-09-28

    申请号：EP02803310

    申请日：2002-11-07

    Applicant: IBM

    Inventor： VOLANT RICHARD P ,  BISSON JOHN C ,  COTE DONNA R ,  DALTON TIMOTHY J ,  GROVES ROBERT A ,  PETRARCA KEVIN S ,  STEIN KENNETH J ,  SUBBANNA SESHADRI

    IPC: B81B3/00 ,  B81C1/00 ,  H01H49/00 ,  H01H59/00

    CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

    Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES
    132.
    发明公开
    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES 有权
    用于生产机电MICRO SWITCH CMOS兼容SUBSTRATES

    公开(公告)号：EP1461828A1

    公开(公告)日：2004-09-29

    申请号：EP02803310.8

    申请日：2002-11-07

    Applicant: International Business Machines Corporation

    Inventor： VOLANT, Richard, P. ,  BISSON, John, C. ,  COTE, Donna, R. ,  DALTON, Timothy, J. ,  GROVES, Robert, A. ,  PETRARCA, Kevin, S. ,  STEIN, Kenneth, J. ,  SUBBANNA, Seshadri

    IPC: H01L21/20

    CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

    Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    MEMS element and electrical circuit
    136.
    发明授权
    MEMS element and electrical circuit 有权

    公开(公告)号：US11837425B2

    公开(公告)日：2023-12-05

    申请号：US17446033

    申请日：2021-08-26

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Hiroaki Yamazaki ,  Ping Wang

    IPC: H01H59/00 ,  B81B3/00

    CPC classification number: H01H59/0009 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2203/04 ,  H01H2059/0027

    Abstract: According to one embodiment, a MEMS element includes a first member, and an element part. The element part includes a first fixed electrode fixed to the first member, and a first movable electrode facing the first fixed electrode, a first conductive member electrically connected with the first movable electrode, and a second conductive member electrically connected with the first movable electrode. The first movable electrode is supported by the first and second conductive members to be separated from the first fixed electrode in a first state before a first electrical signal is applied between the second conductive member and the first fixed electrode. The first conductive member is separated from the first movable electrode in a second state after the first electrical signal is applied. The first movable electrode is supported by the second conductive member to be separated from the first fixed electrode in the second state.

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