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    Integrated released beam layer structure fabricated in trenches and manufacturing method thereof
    131.
    发明公开
    Integrated released beam layer structure fabricated in trenches and manufacturing method thereof 有权
    这是在沟槽产生集成释放堤层的结构和相应的制造方法

    公开(公告)号：EP1547969A2

    公开(公告)日：2005-06-29

    申请号：EP04257172.9

    申请日：2004-11-19

    Applicant: STMicroelectronics, Inc.

    Inventor： Blanchard, Richard A. ,  McAlexander, Joseph C.

    IPC: B81B3/00

    CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/014

    Abstract: A released beam structure fabricated in trench and manufacturing method thereof are provided herein. One embodiment of a released beam structure according to the present invention comprises a semiconductor substrate, a trench, a first conducting layer, and a beam. The trench extends into the semiconductor substrate and has walls. The first conducting layer is positioned over the walls of the trench at selected locations. The beam is positioned with the trench and is connected at a first portion thereof to the semiconductor substrate and movable at a second portion thereof. The second portion of the beam is spaced from the walls of the trench by a selected distance. Therefore, the second portion of the beam is free to move in a plane that is perpendicular or parallel to the surface of the substrate, and could be deflected to electrically contact with the walls of the trench in response to a predetermined acceleration force or a predetermined temperature variation applied on the beam structure. Other beam structures such as a beam held at both ends, or a beam held in the middle are also possible. Several beam structures at different angles can be fabricated simultaneously and mechanical etching stops are automatically formed to prevent unwanted overstress conditions when manufacturing several beam structures at the same time. Beam structures can also be manufactured in three orthogonal directions, providing information on acceleration in any direction.

    Abstract translation: 中提供了在其沟槽和制造方法制造的释放梁结构。 释放梁结构雅丁到本发明的一个实施例包括半导体衬底，形成沟槽，第一导电层，和一个光束。 所述沟槽延伸到所述半导体衬底和具有壁。 该第一导电层被定位在所述沟槽中的所选择的位置的壁。 束被定位成与所述沟槽和在其与半导体基板和可动的第一部分被连接在第二部分上。 光束的第二部分从所述沟槽的壁由选定的距离间隔开。 因此，梁的第二部分自由地在一个平面内移动并垂直于或平行于基板的表面上，并响应于预定的加速力或预定的可偏转以与所述沟槽的壁电接触 温度变化施加在梁结构。 其它的梁结构：因此，例如在两端保持的光束，或在中间保持的光束是可能的。 在不同角度的若干梁结构可以同时制造，并且机械蚀刻停止被自动形成，以防止不希望的过载条件下当在Sametime制造几个梁结构。 梁结构因此可以在三个正交方向上进行制造，在任何方向上提供的加速度信息。

    A MEM GYROSCOPE AND A METHOD OF MAKING SAME
    133.
    发明公开
    A MEM GYROSCOPE AND A METHOD OF MAKING SAME 审中-公开
    MEM陀螺仪和方法生产同样

    公开(公告)号：EP1305256A2

    公开(公告)日：2003-05-02

    申请号：EP01959532.1

    申请日：2001-07-31

    Applicant: HRL LABORATORIES, LLC

    Inventor： KUBENA, Randall, L. ,  CHANG, David, T.

    IPC: B81B1/00

    CPC classification number: B81C1/0015 ,  B81B2201/0242 ,  B81C2201/014 ,  B81C2201/0191 ,  B81C2203/036 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894

    Abstract: A method of making a micro electro-mechanical gyroscope. A cantilevered beam structure, firstportions of side drive electrodes and a mating structure are defined on a first substrate or wafer;and at least one contact structure, second portions of the side drive electrodes and a matingstructure are defined on a second substrate or wafer, the mating structure on the second substrateor wafer being of a complementary shape to the mating structure on the first substrate or waferand the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The matingstructure of the first substrate is moved into a confronting relationship with the mating structureof the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and alsobetween the first and second portions of the side drive electrodes to cause a bond to occurtherebetween. Then the first substrate or wafer is removed to free the cantilevered beam structurefor movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.

    Improvements in or relating to micromechanical devices
    139.
    发明公开
    Improvements in or relating to micromechanical devices 失效
    VerbesserungenfürmikromechanischeGeräte

    公开(公告)号：EP0713117A1

    公开(公告)日：1996-05-22

    申请号：EP95117185.9

    申请日：1995-10-31

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Smith, Gregory C. ,  Gove, Robert J. ,  Boysel, Robert M. ,  Markandey, Vishal ,  Hornbeck, Larry J.

    IPC: G02B26/08

    CPC classification number: B81C1/00111 ,  B81B2201/042 ,  B81C2201/014 ,  G02B26/0841 ,  G06K15/1252 ,  G09G3/20 ,  G09G3/2022 ,  G09G2340/0407 ,  G09G2340/0414 ,  G09G2340/0421 ,  G09G2340/0442 ,  G09G2360/02 ,  H04N1/1934 ,  H04N5/4401 ,  H04N5/7458 ,  H04N7/01

    Abstract: A support pillar 408 for use with a micromechanical device, particularly a digital micromirror device, comprising a pillar material 404 supported by a substrate 400 and covered with a metal layer 406. The support pillar 408 is fabricated by depositing a layer of pillar material on a substrate 400, patterning the pillar layer to define a support pillar 408, and depositing a metal layer 406 over the support pillar 408 enclosing the support pillar. A planar surface even with the top of the pillar may be created by applying a spacer layer 410 over the pillars 408. After applying the spacer layer 410, holes 414 are patterned into the spacer layer to remove any spacer material that is covering the pillars. The spacer layer is then reflowed to fill the holes and lower the surface of the spacer layer such that the surface is coplanar with the tops of the support pillars 408.

    Abstract translation: 用于微机械装置，特别是数字微镜装置的支撑柱408，其包括由衬底400支撑并被金属层406覆盖的支柱材料404.支撑柱408通过将柱材料层沉积在 衬底400，图案化柱层以限定支撑柱408，以及在包围支撑柱的支撑柱408上沉积金属层406。 可以通过在柱408上施加间隔层410来产生甚至具有柱顶部的平面。在施加间隔层410之后，将孔414图案化成间隔层，以移除覆盖柱的任何间隔物材料。 然后将间隔层回流以填充孔并降低间隔层的表面，使得表面与支撑柱408的顶部共面。图像

    SELECTIVE PATTERNING OF AN INTEGRATED FLUXGATE DEVICE
    140.
    发明申请
    SELECTIVE PATTERNING OF AN INTEGRATED FLUXGATE DEVICE 审中-公开
    一体化助熔剂装置的选择性设计

    公开(公告)号：WO2017161082A1

    公开(公告)日：2017-09-21

    申请号：PCT/US2017/022650

    申请日：2017-03-16

    Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED

    Inventor： STRINGER, Lee, Alan ,  EISSA, Mona ,  SHULVER, Byron, J.R. ,  CHEVACHAROENKUL, Sopa ,  KIMMICH, Mark, R. ,  LAVANGKUL, Sudtida ,  JENSON, Mark, L.

    IPC: H01L43/12 ,  H01L21/302

    CPC classification number: B81C1/00825 ,  B81C1/00365 ,  B81C2201/0138 ,  B81C2201/014 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/04

    Abstract: In described examples, a method comprises forming an etch stop layer (151), a first titanium layer (312), a magnetic core (130), a second titanium layer (342), and patterning the first and second titanium layers (312, 342). The etch stop layer (151) is formed above a substrate. The first titanium layer (312) is formed on the etch stop layer (151). The magnetic core (130) is formed on the first titanium layer (312). The second titanium layer (342) has a first portion encapsulating the magnetic core (130) with the first titanium layer (312), and a second portion interfacing with the first titanium layer (312) beyond the magnetic core (130). The patterning of the first and second titanium layers (312, 342) includes forming a mask (352) over a magnetic core region (170) and etching the first and second titanium layers (312, 342) exposed by the mask (352) using a titanium etchant (356, 357) and a titanium oxide etchant (358).

    Abstract translation: 在所描述的示例中，一种方法包括形成蚀刻停止层（151），第一钛层（312），磁芯（130），第二钛层（342），并且图案化 第一和第二钛层（312,342）。 蚀刻停止层（151）形成在衬底上方。 第一钛层（312）形成在蚀刻停止层（151）上。 磁芯（130）形成在第一钛层（312）上。 第二钛层（342）具有用第一钛层（312）封装磁芯（130）的第一部分和与第一钛层（312）接触超过磁芯（130）的第二部分。 第一和第二钛层（312,342）的图案化包括在磁芯区域（170）上方形成掩模（352）并且使用掩模（352）使用由掩模（352）暴露的第一和第二钛层 钛蚀刻剂（356,357）和氧化钛蚀刻剂（358）。

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