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公开(公告)号：KR100425374B1
公开(公告)日：2004-03-30
申请号：KR1020010070655
申请日：2001-11-14
Applicant: 한국과학기술연구원
IPC: G06F7/48
CPC classification number: H01S5/50 , G02F3/00 , H01S3/06754 , H01S5/509
Abstract: The present invention relates to an implementation method of all-optical half adder by using semiconductor optical amplifier(SOA)-based devices and the apparatus thereof. In more detail, it relates to an implementation method of all-optical half adder comprising an all-optical XOR gate and an all-optical AND gate, implemented by using SOA-based devices, and an apparatus thereof.
Abstract translation: 本发明涉及一种利用基于半导体光放大器（SOA）的器件的全光半加器的实现方法及其装置。 更详细地说，本发明涉及一种全光学半加器的实现方法及其装置，该全光半加器包括全光学异或门和全光学与门。
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公开(公告)号：KR1020030028675A
公开(公告)日：2003-04-10
申请号：KR1020010059368
申请日：2001-09-25
Applicant: 한국과학기술연구원
IPC: G02F3/00
Abstract: PURPOSE: An apparatus for realizing an electric light NAND logic element using a semiconductor optical amplifier is provided to be easily combined with other single logic elements for controlling all optical system with only optical signals. CONSTITUTION: A pulse generator(100) generates light pulses. A DFB-LD(Distributed Feedback Laser Diode)(102) has input continuous laser light signals. A first optical divider(104) divides output light of the DFB-LD. An optical modulator(106) modulates the output light from the first optical divider. An optical delay(112) obtains quarter time delay of the output light. An attenuator(108) controls the strength of the output light. A MUX(110) multiplexes the output light of the attenuator. An EDFA(Erbium-Doped Fiber Amplifier)(116) adds the output light of the MUX and the attenuator for amplifying to a pump signal. A tunable laser diode(120) has continuous wave irradiation signals. A second optical divider(122) divides the output light of the tunable laser diode at a ratio of 50 to 50. A semiconductor optical amplifier(124) amplifies the pump signal and the continuous wave irradiation signals for gain-saturating and wavelength-converting the signals. An optical filter(126) filters tunable output light of the semiconductor optical amplifier. An optical signal analyzer(128) detects and analyzes the tunable output light of the optical filter.
Abstract translation: 目的：提供一种用于实现使用半导体光放大器的电灯NAND逻辑元件的装置，以便容易地与用于仅用光信号控制所有光学系统的其它单个逻辑元件组合。 构成：脉冲发生器（100）产生光脉冲。 DFB-LD（分布式反馈激光二极管）（102）具有输入的连续激光信号。 第一分光器（104）分割DFB-LD的输出光。 光调制器（106）调制来自第一分光器的输出光。 光延迟（112）获得输出光的四分之一时间延迟。 衰减器（108）控制输出光的强度。 MUX（110）复用衰减器的输出光。 EDFA（掺铒光纤放大器）（116）将MUX的输出光和用于放大的衰减器相加到泵浦信号。 可调激光二极管（120）具有连续波照射信号。 第二分光器（122）以50至50的比例对可调谐激光二极管的输出光进行分压。半导体光放大器（124）放大泵浦信号和连续波照射信号以进行增益饱和和波长转换 信号。 滤光器（126）对半导体光放大器的可调输出光进行滤光。 光信号分析器（128）检测并分析滤光器的可调输出光。
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公开(公告)号：KR100361036B1
公开(公告)日：2002-11-18
申请号：KR1020000005618
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L21/00
Abstract: 본 발명은 얇은 반도체 시료가 깨지지 않도록 마운팅(mounting) 기술을 이용하여 반도체 광소자의 전,후 단면에 무반사 코딩을 하도록 하는 무반사 코팅을 위한 반도체 광소자 칩의 시료 홀더 장치에 관한 것이다.
따라서, 본 발명은 무반사 코팅시 시료 깨짐을 방지하기 위한 마운팅 기술을 이용하는 시료 홀더 장치에 있어서, 제 1스테인레스(10) 상에는 스페이서(20)와, 고정판(30)과, 제 2스테인레스(40)가 순차적으로 적층되되, 각 홀(50a)을 통하여 상기 제 2스테인레스(40)으로부터 상기 제 1스테인레스(10)까지 도달되도록 홀더결합수단(50)에 의해 체결되고, 각 홀(55a)을 통하여 상기 제 2스테인레스(40)으로부터 상기 고정판(30)까지 도달되도록 시료고정수단(55)에 의해 체결되며, 상기 고정판(30)과 상기 제 1스테인레스(10) 사이에 놓여지는 위치에 스페이서(20)와 수평으로 레이저바(60)가 연장되어 설치되도록 구성되어, 상기 제 2스테인레스(40)의 면적 크기를 상기 제 1스테인레스(10)의 면적 크기 보다 작게 설계함으로서 무반사 코팅시 레이저바(60)에 가해지는 힘의 세기� � 분산시키도록 하는 것을 특징으로 하는 무반사 코팅을 위한 반도체 광소자 칩의 시료 홀더 장치가 제시된다.-
公开(公告)号：KR1020020069729A
公开(公告)日：2002-09-05
申请号：KR1020010010094
申请日：2001-02-27
Applicant: 한국과학기술연구원
IPC: H01S3/136
Abstract: PURPOSE: A horizontal coupled type laser diode is provided to widen a variable wavelength range by using two active elements having different propagation constants. CONSTITUTION: A horizontal coupled type laser diode is formed by coupling horizontally the first resonator including a laser diode(100) with the second resonator including an optical amplifier(200). The optical amplifier(200) has a propagation constant which is different from the laser diode(100). The first electrode(110) and the second electrode(210) are installed in an upper end portion and a lower end portion of the laser diode(100) in order to apply current to the laser diode(100) and the optical amplifier(200), respectively. Active layers of the laser diode(100) and the optical amplifier(200) are formed by InGaAsP of a multiple quantum well structures.
Abstract translation: 目的：提供水平耦合型激光二极管，通过使用具有不同传播常数的两个有源元件来加宽可变波长范围。 构成：通过将包括激光二极管（100）的第一谐振器与包括光放大器（200）的第二谐振器水平耦合而形成水平耦合型激光二极管。 光放大器（200）具有与激光二极管（100）不同的传播常数。 为了向激光二极管（100）和光放大器（200）施加电流，第一电极（110）和第二电极（210）安装在激光二极管（100）的上端部和下端部分 ）， 分别。 激光二极管（100）和光放大器（200）的有源层由多量子阱结构的InGaAsP形成。
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公开(公告)号：KR1020020060523A
公开(公告)日：2002-07-18
申请号：KR1020010001650
申请日：2001-01-11
Applicant: 한국과학기술연구원
IPC: G02B6/293
Abstract: PURPOSE: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier is provided to secure a wide range of input power since the method does not need a conventional Mach-Zender interferometer structure, thereby utilizing a characteristics of a conventional semiconductor laser such as a variable wavelength laser diode. CONSTITUTION: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier includes steps of etching end portions(100a,100b) of at least one of a first and a second waveguides(100,200), anti-reflection coating the end portions(100a,100b) and dividing the first and the second waveguides(100,200) by cleaving to thereby obtain a divided reflection surface and a divided anti-reflection surface, respectively. An active laser provided thereon with the first and the second waveguides(100,200) utilized in the method is made of InGaAsP and constructed into a multi-quantum well structure.
Abstract translation: 目的：提供一种通过使用半导体激光器的水平耦合和半导体光放大器来实现电光波长转换器的方法，以确保宽范围的输入功率，因为该方法不需要常规的马赫 - 泽德干涉仪结构，因此 利用诸如可变波长激光二极管的常规半导体激光器的特性。 构成：通过使用半导体激光器的水平耦合和半导体光学放大器来实现电光波长转换器的方法包括以下步骤：蚀刻第一和第二波导（100,200）中的至少一个的端部（100a，100b） （100a，100b）进行防反射，分割第一和第二波导管（100,200），分别得到分割的反射面和分割的防反射面。 在其上设置有在该方法中使用的第一和第二波导（100,200）的有源激光器由InGaAsP制成并构成多量子阱结构。
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Patent Agency Ranking
公开(公告)号：KR1020010077675A
公开(公告)日：2001-08-20
申请号：KR1020000005631
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/14
Abstract: PURPOSE: A method for extending the gain bandwidth of a semiconductor optical amplifier is provided to obtain the semiconductor optical amplifier having a wide gain bandwidth by using a quantum dot as a gain region of the semiconductor optical amplifier. CONSTITUTION: An InP(Indium Phosphorus) buffer layer is grown at a predetermined thickness(S10). After the growing of the InP buffer layer, a predetermined gas is supplied(S20, S30, S40). An InAs(Indium arsenide) single well layer is grown on the InP buffer layer(S50). After the growing of the InAs layer, a predetermined gas is supplied(S60, S70, S80). An InP cap layer is grown on the InAs layer(S90).
Abstract translation: 目的：提供一种用于扩展半导体光放大器的增益带宽的方法，通过使用量子点作为半导体光放大器的增益区，获得具有宽增益带宽的半导体光放大器。 构成：以预定厚度生长InP（铟磷）缓冲层（S10）。 在InP缓冲层生长之后，提供预定的气体（S20，S30，S40）。 在InP缓冲层上生长InAs（砷化铟）单阱层（S50）。 在InAs层生长之后，提供预定的气体（S60，S70，S80）。 InAs层在InAs层上生长（S90）。
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公开(公告)号：KR1020200133996A
公开(公告)日：2020-12-01
申请号：KR1020190059409
申请日：2019-05-21
Applicant: 한국과학기술연구원 , 서울대학교병원 , 인하대학교 산학협력단
Abstract: 본개시는광원으로부터의광을두 개의광으로분산하고, 안구에입사되는상기두 개의광의경로를조절하여제1 배율로, 상기안구의적어도하나의안저이미지를획득하며, 상기안구에입사되는상기두 개의광의경로를조절하여제2 배율로, 상기획득된적어도하나의안저이미지전체의망막에대해서, 상기제1 배율보다높은제2 배율로복수의 DIC 이미지를획득하는망막이미지촬영에관한것이다.
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公开(公告)号：KR101803291B1
公开(公告)日：2017-12-01
申请号：KR1020160061398
申请日：2016-05-19
Applicant: 한국과학기술연구원
IPC: A61B5/0476 , A61B5/0488 , A61B5/00 , A61B5/024 , A61B5/0444
Abstract: 실시예들은임산부의뇌파신호를측정하는 EEG 측정부, 임산부의복부에부착되어, 임산부의자궁수축도를측정하는 EMG(Electromyography) 측정부, 및상기임산부의뇌파신호및 자궁수축도를기초로진단정보를생성하는진단정보처리부를포함하는 EEG 및 EMG 신호에기반한자궁수축도검사장치및 이를이용한검사방법에관련된다.
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