Abstract:
A multi-layer electronic device can be formed to include an insulative substrate (212), a first vapor deposited conductor layer (312) on the insulative substrate (212), a first vapor deposited insulator layer (314) on the first conductor layer (312), the first insulator layer (314) having at least one via hole (316) therein, and a vapor deposited conductive filler (320) in the via hole (316) of the first insulator layer (314). Desirably, the conductive filler (320) is deposited in the via hole (316) of the first insulator layer (314) such that the surface of the conductive filler (320) opposite the first conductor layer (312) is substantially planar with the surface of the first insulator layer (314) opposite the first conductor layer (312).
Abstract:
A method is disclosed for fabricating a patterned embedded capacitance layer. The method includes fabricating (1305, 1310) a ceramic oxide layer (510) overlying a conductive metal layer (515) overlying a printed circuit substrate (505), perforating (1320) the ceramic oxide layer within a region (705), and removing (1325) the ceramic oxide layer and the conductive metal layer in the region by chemical etching of the conductive metal layer. The ceramic oxide layer may be less than 1 micron thick.
Abstract:
Method for manufacturing a parylene-based electrode array that includes an underlying parylene layer, one or more patterned electrode layers comprising a conductive material such as a metal, and one or more overlying parylene layers. The overlying parylene is etched away or otherwise processed to expose the electrodes where stimulation or recording is to occur. All other conductive material in the device is occluded from the environment by the two layers of parylene surrounding it.
Abstract:
Processes for fabricating a multi-layer circuit assembly and a multi-layer circuit assembly fabricated by such processes are provided. The process includes (a) providing a substrate at least one area of which comprises a plurality of vias, these area(s) having a via density of 500 to 10,000 holes/square inch (75 to 1550 holes/square centimeter); (b) applying a dielectric coating onto all exposed surfaces of the substrate to form a conformal coating thereon; and (c) applying a layer of metal to all surfaces of the substrate. Additional processing steps such as circuitization may be included.
Abstract:
A substrate (16) with hermetically sealed vias (18) extending from one side of the substrate to another and a method for fabricating same. The vias may be filled with a conductive material such as, for example, a fritless ink. The conductive path formed by the conductive material aids in sealing one side of the substrate from another. One sideof the substrate may include a sensing element (12) and another side of the substrate may include sensing electronics (14).
Abstract:
The invention relates to a thin film capacitor containing (a) a substrate, (b) a first polymeric film comprising an electrically conductive polymer located on the substrate, (c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, (d) a second polymeric film comprising an electrically conductive polymer located on the pentoxide layer.