公开(公告)号：WO2016053745A1

公开(公告)日：2016-04-07

申请号：PCT/US2015/051923

申请日：2015-09-24

Applicant: INVENSENSE, INC.

Inventor： TSAI, Julius Ming-Lin ,  DANEMAN, Michael

IPC: H04R17/02 ,  H04R31/00

CPC classification number: B81B7/02 ,  B81B2201/0257 ,  B81B2203/04 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/094 ,  B81C1/00246 ,  B81C2201/0123 ,  B81C2201/013 ,  B81C2201/0183 ,  B81C2203/0714 ,  B81C2203/075 ,  H01L2224/48091 ,  H01L2924/15151 ,  H04R17/02 ,  H04R31/006 ,  H04R2201/003 ,  H01L2924/00014

Abstract: A piezoelectric microphone and/or a piezoelectric microphone system is presented herein. In an implementation, a piezoelectric microphone includes a microelectromechanical systems (MEMS) layer and a complementary metal-oxide-semiconductor (CMOS) layer. The MEMS layer includes at least one piezoelectric layer and a conductive layer. The conductive layer is deposited on the at least one piezoelectric layer and is associated with at least one sensing electrode. The CMOS layer is deposited on the MEMS layer. Furthermore, a cavity formed in the CMOS layer includes the at least one sensing electrode

Abstract translation: 此处呈现压电麦克风和/或压电麦克风系统。 在一个实现中，压电麦克风包括微机电系统（MEMS）层和互补金属氧化物半导体（CMOS）层。 MEMS层包括至少一个压电层和导电层。 导电层沉积在至少一个压电层上并且与至少一个感测电极相关联。 CMOS层沉积在MEMS层上。 此外，形成在CMOS层中的空腔包括至少一个感测电极

公开(公告)号：WO2016022906A1

公开(公告)日：2016-02-11

申请号：PCT/US2015/044185

申请日：2015-08-07

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： DAYEH, Shadi A. ,  AZZAZY, Farid ,  LEE, Sang Heon

IPC: A61B5/04

CPC classification number: A61B5/0478 ,  B81B1/00 ,  B81B2201/0292 ,  B81B2203/0361 ,  B81B2203/04 ,  B81C1/00111 ,  B81C2201/013

Abstract: A preferred conformal penetrating multi electrode array includes a plastic substrate that is flexible enough to conform to cortical tissue. A plurality of penetrating semiconductor micro electrodes extend away from a surface of the flexible substrate and are stiff enough to penetrate cortical tissue. Electrode lines are encapsulated at least partially within the flexible substrate and electrically connected to the plurality of penetrating semiconductor microelectrodes. The penetrating semiconductor electrodes preferably include pointed metal tips. A preferred method of fabrication permits forming stiff penetrating electrodes on a substrate that is very flexible, and providing electrical connection to electrode lines within the substrate.

Abstract translation: 优选的共形穿透性多电极阵列包括足够柔性以符合皮质组织的塑料基底。 多个穿透半导体微电极远离柔性基底的表面延伸并且足够硬以穿透皮质组织。 电极线至少部分地封装在柔性基板内并电连接到多个穿透半导体微电极。 穿透半导体电极优选地包括尖锐的金属尖端。 优选的制造方法允许在非常柔性的基底上形成刚性穿透电极，并且提供与衬底内的电极线的电连接。

公开(公告)号：WO2015081130A1

公开(公告)日：2015-06-04

申请号：PCT/US2014/067477

申请日：2014-11-25

Applicant: INPHENIX, INC.

Inventor： KAMAL, Mohammad ,  LI, Tongning ,  EU, David ,  QI, Qinian

IPC: G02B5/28 ,  B81B3/00

CPC classification number: G02B26/001 ,  B81C1/00317 ,  B81C2201/013 ,  G02B1/11 ,  G02B1/12 ,  H01L33/46 ,  H01L39/2467 ,  H01L2924/1461 ,  H01S3/08027 ,  H01S3/083 ,  H01S3/105 ,  H01S3/1062 ,  H01S5/141 ,  H01S5/18366

Abstract: A wavelength tunable gain medium with micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.

Abstract translation: 提供基于微机电系统（MEMS）的法布里 - 珀罗（FP）滤波器空腔调谐的波长可调增益介质作为可调激光器。 该系统包括用于波长选择的激光腔和滤光腔。 激光腔由诸如半导体光放大器（SOA），两个准直透镜和端反射器的增益介质组成。 MEMS-FP滤光器腔包括固定反射器和可由静电力控制的可移动反射器。 通过移动MEMS反射器，可以通过改变FP滤光器腔长度来调节波长。 MEMS FP滤波器腔位移可以用阶跃电压离散地调节，或者通过使用连续的驱动电压连续地调节。 连续调谐的驱动频率可以是谐振频率或MEMS结构的任何其他频率，调谐范围可以覆盖30nm，40nm和大于100nm的不同调谐范围。

公开(公告)号：WO2015042702A1

公开(公告)日：2015-04-02

申请号：PCT/CA2014/050910

申请日：2014-09-23

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark

IPC: B81C1/00 ,  B81B5/00 ,  B81B7/02 ,  G01C19/56 ,  G01P15/08

CPC classification number: B81B3/0078 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0163 ,  B81B2207/092 ,  B81C1/00269 ,  B81C2201/013 ,  G01C19/5783 ,  G01P15/0802 ,  G01P15/125

Abstract: A micro-electro-mechanical system (MEMS) device and a manufacturing method are provided. The device includes top and bottom cap wafers and a MEMS wafer disposed between the top cap wafer and the bottom cap wafer. The top, bottom and MEMS wafers define sidewalls of a cavity. A MEMS structure is housed within the cavity and is movable relative to the top and bottom caps. At least one electrode is provided in one of the wafers, the electrode being operatively coupled to the MEMS structure to detect or induce a movement thereof. A support structure extends through the cavity from the top cap wafer to the bottom cap wafer to prevent bowing in the top cap and bottom cap wafers.

Abstract translation: 提供了一种微电子机械系统（MEMS）装置和制造方法。 该装置包括顶盖和底盖晶片以及设置在顶盖晶片和底盖晶片之间的MEMS晶片。 顶部，底部和MEMS晶片限定空腔的侧壁。 MEMS结构容纳在腔内并且可相对于顶盖和底盖移动。 在一个晶片中提供至少一个电极，电极可操作地耦合到MEMS结构以检测或引起其移动。 支撑结构通过空腔从顶盖晶片延伸到底盖晶片，以防止在顶盖和底盖晶片中弯曲。

公开(公告)号：WO2015003523A1

公开(公告)日：2015-01-15

申请号：PCT/CN2014/076636

申请日：2014-04-30

Applicant: 厦门华谱光电科技有限公司

Inventor： 姜丽萍

IPC: H01L31/042

CPC classification number: B81B3/0021 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2201/0181 ,  C23C14/0605 ,  C23C14/0617 ,  C23C14/14 ,  C23C14/34 ,  F24S25/30 ,  F24S25/636 ,  F24S2025/016 ,  F24S2025/801 ,  F24S2025/807 ,  G01F1/56 ,  G01J1/42 ,  H02S20/00 ,  Y02E10/47 ,  Y02E10/50

Abstract: 本实用新型公开了一种太阳能板紧固装置，它包括：导轨（1），所述导轨（1）的上端开设有卡块容置槽（11）；卡接件（2），所述卡接件（2）的上部为螺栓连接部（21），所述卡接件（2）的中部为对称设置的两个连接板（22），两个连接板（22）之间形成通槽（221），所述卡接件（2）的下部为卡块部（23），所述卡块部（23）与所述卡块容置槽（11）相配合，所述卡块部（23）的底端中心开设有弹簧安装孔（231）；螺栓（3），所述螺栓（3）与所述螺栓连接部（21）螺接并伸入所述通槽内（221）；压板（4），所述压板（4）位于所述卡接件（2）上方，所述压板（4）通过所述螺栓（3）与所述卡接件（2）连接；弹簧（5），所述弹簧（5）的上段固接于所述弹簧安装孔（231）内。本实用新型可满足不同厚度太阳能板安装要求且安装简便。

公开(公告)号：WO2014179340A3

公开(公告)日：2014-12-24

申请号：PCT/US2014035920

申请日：2014-04-29

Applicant: UNIV NORTH CAROLINA

Inventor： CAHOON JAMES ,  CHRISTESEN JOSEPH ,  PINION CHRISTOPHER

IPC: H01L21/027 ,  H01L21/205

CPC classification number: H01L29/0673 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0361 ,  B81C1/00111 ,  B81C1/0015 ,  B81C2201/013 ,  B81C2201/0171 ,  B81C2201/0176 ,  G01Q60/38 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/283 ,  H01L21/30604 ,  H01L29/16 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/09 ,  Y02E10/50

Abstract: Methods of chemically encoding high-resolution shapes in silicon nanowires during metal nanoparticle catalyzed vapor-liquid-solid growth or vapor-solid-solid growth are provided. In situ phosphorus or boron doping of the silicon nanowires can be controlled during the growth of the silicon nanowires such that high-resolution shapes can be etched along a growth axis on the silicon nanowires. Nanowires with an encoded morphology can have high-resolution shapes with a size resolution of about 1,000 nm to about 10 nm and comprise geometrical shapes, conical profiles, nanogaps and gratings.

Abstract translation: 提供了在金属纳米颗粒催化的气 - 液 - 固 - 固生长或气 - 固 - 固生长期间在硅纳米线中化学编码高分辨率形状的方法。 可以在硅纳米线的生长期间控制硅纳米线的原位磷或硼掺杂，使得可以沿硅纳米线上的生长轴蚀刻高分辨率形状。 具有编码形态的纳米线可以具有约1000nm至约10nm的尺寸分辨率的高分辨率形状，并且包括几何形状，锥形轮廓，纳米光栅和光栅。

公开(公告)号：WO2014141114A1

公开(公告)日：2014-09-18

申请号：PCT/IB2014/059710

申请日：2014-03-13

Applicant: EHRLICH, Raviv ,  GERSON, Yuval

Inventor： EHRLICH, Raviv ,  GERSON, Yuval

IPC: G02B26/08

CPC classification number: F16C11/12 ,  B81B3/0043 ,  B81B2201/0235 ,  B81B2201/034 ,  B81B2201/042 ,  B81B2203/0118 ,  B81B2203/0163 ,  B81C1/0015 ,  B81C1/00198 ,  B81C1/00523 ,  B81C2201/013 ,  E05D1/02 ,  E05D7/00 ,  E05D11/0081 ,  F16F1/48 ,  F16F2224/025 ,  F16F2226/00 ,  F16F2226/042 ,  G01C19/02 ,  G01P15/09 ,  G01P15/093 ,  G01P15/125 ,  G02B26/0833 ,  G02B26/105 ,  Y10T16/522 ,  Y10T16/525 ,  Y10T29/24 ,  Y10T29/25

Abstract: A mechanical device (20, 50, 70, 80, 120) includes a long, narrow element (26, 54, 66, 90, 122) made of a rigid, elastic material. A rigid frame (28, 52, 64, 92) is configured to anchor at least one end of the element, which is attached to the frame, and to define a gap running longitudinally along the element between the beam and the frame, so that the element is free to move within the gap. A solid filler material (30, 56, 68, 94, 102, 124), different from the rigid, elastic material, fills at least a part of the gap between the element and the frame so as to permit a first mode of movement of the element within the gap while inhibiting a different, second mode of movement.

Abstract translation: 机械装置（20,50,70,80,120）包括由刚性弹性材料制成的长而窄的元件（26,54,66,90,122）。 刚性框架（28,52,64,92）构造成锚定附接到框架的元件的至少一个端部并且限定沿着梁和框架之间的元件纵向延伸的间隙，使得 该元素可以在间隙内自由移动。 与刚性弹性材料不同的固体填充材料（30,56,68,94,102,124）填充元件和框架之间的间隙的至少一部分，以便允许第一模式的运动 间隙内的元件，同时抑制不同的第二移动模式。

公开(公告)号：WO2011162950A3

公开(公告)日：2012-05-24

申请号：PCT/US2011039564

申请日：2011-06-08

Applicant: IBM ,  HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

Inventor： HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

IPC: B81C1/00 ,  B81B3/00 ,  H01H59/00

CPC classification number: B81C1/00365 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60b) includes forming a first sacrificial cavity layer (18) over a wiring layer (14) and substrate (10). The method further includes forming an insulator layer (40) over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity (60b) of the MEMS.

Abstract translation: 形成至少一个微机电系统（MEMS）腔（60b）的方法包括在布线层（14）和衬底（10）上形成第一牺牲腔层（18）。 该方法还包括在第一牺牲腔层上形成绝缘体层（40）。 该方法还包括在绝缘体层上执行反向镶嵌回蚀工艺。 该方法还包括平坦化绝缘体层和第一牺牲腔层。 该方法还包括将第一牺牲腔层排出或剥离到用于MEMS的第一腔（60b）的平坦表面。

公开(公告)号：WO2011162953A3

公开(公告)日：2012-04-19

申请号：PCT/US2011039571

申请日：2011-06-08

Applicant: IBM ,  DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K

Inventor： DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K

IPC: H01L23/48 ,  B81B7/00

CPC classification number: B81C1/00365 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires (14) from the lower wiring layer. The method further includes forming an electrode beam (38) over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition (50).

Abstract translation: 形成至少一个微机电系统（MEMS）的方法包括在基板上形成下布线层。 该方法还包括从下布线层形成多个分立布线（14）。 该方法还包括在多个离散导线上形成电极束（38）。 形成电极束和多个离散导线中的至少一个形成有最小化后续硅沉积（50）中的小丘和三个点的布局。

公开(公告)号：WO2011162953A2

公开(公告)日：2011-12-29

申请号：PCT/US2011/039571

申请日：2011-06-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  DUNBAR, George, A. ,  HE, Zhong-Xiang ,  MALING, Jeffrey, C. ,  MURPHY, William, J. ,  STAMPER, Anthony, K.

Inventor： DUNBAR, George, A. ,  HE, Zhong-Xiang ,  MALING, Jeffrey, C. ,  MURPHY, William, J. ,  STAMPER, Anthony, K.

IPC: H01L23/48 ,  B81B7/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires (14) from the lower wiring layer. The method further includes forming an electrode beam (38) over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition (50).

Abstract translation: 形成至少一个微机电系统（MEMS）的方法包括在基板上形成下布线层。 该方法还包括从下布线层形成多个分立布线（14）。 该方法还包括在多个离散导线上形成电极束（38）。 形成电极束和多个离散导线中的至少一个形成有最小化后续硅沉积（50）中的小丘和三点的布局。