公开(公告)号：US07816166B1

公开(公告)日：2010-10-19

申请号：US11716082

申请日：2007-03-09

Applicant: Emmanuel P. Quevy

Inventor： Emmanuel P. Quevy

IPC: H01L21/00

CPC classification number: B81C1/0015 ,  B81B2201/0271 ,  B81C1/00595 ,  B81C2201/0136 ,  B81C2201/014

Abstract: A method to form a MEMS structure is described. In an embodiment, a structure having a first release layer between a substrate and a member is provided. A second release layer is adjacent to a sidewall of the member. At least a portion of each of the first and the second release layers is then removed. In one embodiment, the member is formed by a damascene process. In another embodiment, the member is formed by a subtractive process. In a specific embodiment, the second release layer formed adjacent to a sidewall of the member has sub-lithographic dimensions.

Abstract translation: 描述了形成MEMS结构的方法。 在一个实施例中，提供了在基板和构件之间具有第一释放层的结构。 第二释放层与构件的侧壁相邻。 然后去除第一和第二释放层中的每一个的至少一部分。 在一个实施例中，构件通过镶嵌工艺形成。 在另一个实施例中，构件通过减法处理形成。 在具体实施例中，与构件的侧壁相邻形成的第二释放层具有亚光刻尺寸。

公开(公告)号：US07679154B2

公开(公告)日：2010-03-16

申请号：US12001289

申请日：2007-12-10

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schäfer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schäfer

IPC: H01L29/84

CPC classification number: B81C1/00182 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract translation: 在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。 在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。 这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。 此外，可以在隔膜区域中产生介孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

公开(公告)号：US07494839B2

公开(公告)日：2009-02-24

申请号：US11011888

申请日：2004-12-13

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: H01L21/00

CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0116 ,  B81C2201/0136

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract translation: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域，第一区域具有第一掺杂。 此外，提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外，使用施加在稳定元件上的第一外延层，在第一区域上方产生膜。 在另一方法步骤中，第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式，本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

公开(公告)号：US20070137989A1

公开(公告)日：2007-06-21

申请号：US10583719

申请日：2004-12-23

Applicant: Claire Divoux ,  Marie-Helene Vaudaine ,  Thierry Enot

Inventor： Claire Divoux ,  Marie-Helene Vaudaine ,  Thierry Enot

IPC: H01H13/72

CPC classification number: G02B26/085 ,  B81B2201/038 ,  B81B2201/047 ,  B81B2203/0127 ,  B81B2203/0361 ,  B81C1/00626 ,  B81C2201/0136 ,  G02B26/0833 ,  G02B26/0841 ,  Y10S29/016 ,  Y10S438/924 ,  Y10T29/42

Abstract: The invention relates to a method for making an actuation system for an optical component comprising: etching of a first face of a component, to form pads on it, etching of a second face of the component, to expose a membrane made of the same material as the pads, production of the actuation means of the pads and the membrane.

Abstract translation: 本发明涉及一种用于制造光学部件的致动系统的方法，包括：蚀刻部件的第一面，在其上形成焊盘，蚀刻部件的第二面，暴露由相同材料制成的膜 作为垫，制造垫和膜的致动装置。

公开(公告)号：US06658728B2

公开(公告)日：2003-12-09

申请号：US09917572

申请日：2001-07-27

Applicant: David Kirtland Fork ,  Jackson Ho ,  Rachel King-ha Lau ,  JengPing Lu

Inventor： David Kirtland Fork ,  Jackson Ho ,  Rachel King-ha Lau ,  JengPing Lu

IPC: H05K330

CPC classification number: G01R1/06716 ,  B81B2203/0118 ,  B81C1/00484 ,  B81C2201/0136 ,  B81C2203/058 ,  G01R1/06727 ,  G01R1/07342 ,  G01R3/00 ,  H01L23/49811 ,  H01L2924/0002 ,  H01R4/48 ,  H01R12/57 ,  H05K3/4092 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/4914 ,  H01L2924/00

Abstract: Efficient methods for lithographically fabricating spring structures onto a substrate containing contact pads or metal vias by forming both the spring metal and release material layers using a single mask. Specifically, a pad of release material is self-aligned to the spring metal finger using a photoresist mask or a plated metal pattern, or using lift-off processing techniques. A release mask is then used to release the spring metal finger while retaining a portion of the release material that secures the anchor portion of the spring metal finger to the substrate. When the release material is electrically conductive (e.g., titanium), this release material portion is positioned directly over the contact pad or metal via, and acts as a conduit to the spring metal finger in the completed spring structure. When the release material is non-conductive, a metal strap is formed to connect the spring metal finger to the contact pad/via.

Abstract translation: 通过使用单个掩模通过形成弹簧金属和释放材料层来将含有接触垫或金属通孔的弹性结构光刻制造到衬底上的有效方法。 具体地说，使用光致抗蚀剂掩模或电镀金属图案或使用剥离处理技术，释放材料垫与弹簧金属手指自对准。 然后使用释放掩模释放弹簧金属指，同时保持将弹簧金属指的锚固部分固定到基底的释放材料的一部分。 当释放材料是导电的（例如钛）时，该释放材料部分直接位于接触垫或金属通孔上方，并且用作在完成的弹簧结构中的弹簧金属指的导管。 当释放材料不导电时，形成金属带以将弹簧金属手指连接到接触垫/通孔。

公开(公告)号：US20030160023A1

公开(公告)日：2003-08-28

申请号：US10373235

申请日：2003-02-24

Applicant: BENO CORPORATION

Inventor： In-Yao Lee ,  Chih-Ching Chen

IPC: C03C025/68

CPC classification number: B81C1/0042 ,  B01L3/0241 ,  B41J2/16 ,  B41J2/1629 ,  B41J2/1631 ,  B81B2201/052 ,  B81B2203/0392 ,  B81C1/00595 ,  B81C2201/0136

Abstract: A method of manufacturing a fluid injection device. The method of the present invention applies a compensated geometric shape of the unetched isolating portions to increase the additional compensated portion for etching, or the ion implanting process to reduce the etching rate of the unetched isolating portions. Thus, crosstalk or overshoot in the isolating portions of the fluid injection device can be reduced, and the fluid injection device can be precisely manufactured in a small size.

Abstract translation: 一种制造流体注射装置的方法。 本发明的方法应用未蚀刻绝缘部分的补偿几何形状以增加用于蚀刻的附加补偿部分，或离子注入工艺以降低未蚀刻绝缘部分的蚀刻速率。 因此，可以减少流体注入装置的隔离部分中的串扰或过冲，并且能够精确地制造流体注射装置。

公开(公告)号：US20030116813A1

公开(公告)日：2003-06-26

申请号：US10169464

申请日：2002-10-28

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: H01L021/00 ,  H01L027/14 ,  H01L029/84

CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2201/036 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2203/0136

Abstract: A micromechanical component having a substrate (10) made from a substrate material having a first doping type (p), a micromechanical functional structure provided in the substrate (10) and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones (15; 15a; 15b; 15c; 730; 740; 830) made from the substrate material having a second doping type (n), the zones being at least partially surrounded by a cavity (50; 50e-f), and the cover layer has a porous layer (30) made from the substrate material.

Abstract translation: 一种具有由具有第一掺杂型（p）的衬底材料制成的衬底（10）的微机械部件，以及设置在衬底（10）中的微机械功能结构和覆盖层，以至少部分地覆盖微机械功能结构。 所述微机械功能结构具有由具有第二掺杂型（n）的所述衬底材料制成的区域（15; 15a; 15b; 15c; 730; 740; 830），所述区域至少部分地被空腔（50; 50e- f），并且覆盖层具有由基板材料制成的多孔层（30）。

公开(公告)号：US06143583A

公开(公告)日：2000-11-07

申请号：US93492

申请日：1998-06-08

Applicant: Ken Maxwell Hays

Inventor： Ken Maxwell Hays

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/00

CPC classification number: B81C1/00595 ,  B81B2201/0242 ,  B81B2203/033 ,  B81C2201/0136 ,  B81C2201/0191 ,  B81C2203/031

Abstract: The method of the present invention provides a process for manufacturing MEMS devices having more precisely defined mechanical and/or electromechanical members. The method of the present invention begins by providing a partially sacrificial substrate and a support substrate. In order to space the mechanical and/or electromechanical members of the resulting MEMS device above the support substrate, mesas are formed on the support substrate. By forming the mesas on the support substrate instead of the partially sacrificial substrate, the mechanical and/or electromechanical members can be more precisely formed from the partially sacrificial substrate since the inner surface of the partially sacrificial substrate is not etched and therefore remains planar. As such, trenches can be precisely etched through the planar inner surface of the partially sacrificial substrate to define mechanical and/or electromechanical members of the MEMS device. The present invention also provides an improved MEMS device, such as an improved gyroscope, that includes more precisely and reliably defined mechanical and/or electromechanical members.

Abstract translation: 本发明的方法提供了一种用于制造具有更精确定义的机械和/或机电构件的MEMS装置的方法。 本发明的方法开始于提供部分牺牲衬底和支撑衬底。 为了将所得MEMS器件的机械和/或机电部件放置在支撑基板上方，台面形成在支撑基板上。 通过在支撑衬底上形成台面而不是部分牺牲衬底，可以从部分牺牲衬底更精确地形成机械和/或机电构件，因为部分牺牲衬底的内表面没有被蚀刻并因此保持平面。 因此，可以通过部分牺牲衬底的平面内表面精确地蚀刻沟槽，以限定MEMS器件的机械和/或机电部件。 本发明还提供了一种改进的MEMS器件，例如改进的陀螺仪，其包括更准确且可靠地定义的机械和/或机电元件。

公开(公告)号：US5902120A

公开(公告)日：1999-05-11

申请号：US41805

申请日：1998-03-13

Applicant: Guenter Igel ,  Martin Mall

Inventor： Guenter Igel ,  Martin Mall

IPC: H01L23/34 ,  B81C1/00 ,  H01L23/36 ,  H01L21/302

CPC classification number: B81C1/00666 ,  B81B2203/0136 ,  B81C2201/0136 ,  B81C2201/0173

Abstract: A process is disclosed for producing spatially patterned components from a body. On the backside of the body, a retardation layer with openings is provided for retarding a removal of the material of the body, and areas of migration-capable material are deposited. The body is subjected to a thermal migration process to form migration regions. Then, in a single material removal step, the components are separated from the body and the migration regions are exposed.

Abstract translation: 公开了用于从身体产生空间图案化部件的方法。 在身体的背面，提供具有开口的延迟层，用于延缓身体材料的去除，并沉积可迁移材料的区域。 对身体进行热迁移过程以形成迁移区域。 然后，在单个材料去除步骤中，将组分与身体分离并且暴露出迁移区域。

公开(公告)号：US5854122A

公开(公告)日：1998-12-29

申请号：US816651

申请日：1997-03-13

Applicant: Kenneth Maxwell Hays ,  Bradley Leonard Halleck ,  Eugene Coleman Whitcomb

Inventor： Kenneth Maxwell Hays ,  Bradley Leonard Halleck ,  Eugene Coleman Whitcomb

IPC: H01L21/306 ,  B81B3/00 ,  F15C5/00 ,  H01L29/84 ,  H01L21/30 ,  H01L21/46

CPC classification number: B81C1/00595 ,  B81C2201/0136 ,  B81C2201/019

Abstract: Micromachining a microelectromechanical structure requires one or more heavily doped silicon layers. Intricately patterned structures are created in a heavily doped surface layer on a relatively undoped substrate. The substrate is subsequently dissolved in a selective etch. The doping prevents the patterned structures from dissolving. In this invention, a doped layer is grown epitaxially onto the first substrate rather than by diffusing a dopant into the substrate. This produces additional planarity, thickness control, and dopant profile control. The structure may then be placed into a larger device, such as an infrared sensor, an accelerometer, or an angular rate sensor.

Abstract translation: 微加工微机电结构需要一个或多个重掺杂的硅层。 在相对未掺杂的衬底上的重掺杂表面层中产生复杂图案化结构。 随后将衬底溶解在选择性蚀刻中。 掺杂防止图案化结构溶解。 在本发明中，将掺杂层外延生长到第一衬底上，而不是将掺杂剂扩散到衬底中。 这产生额外的平面度，厚度控制和掺杂物分布控制。 然后可以将该结构放置在更大的装置中，例如红外传感器，加速度计或角速度传感器。