公开(公告)号：KR1020100079243A

公开(公告)日：2010-07-08

申请号：KR1020080137669

申请日：2008-12-31

Applicant: 삼성전자주식회사 ,  홍익대학교 산학협력단

Inventor： 고재우 ,  이정해 ,  백준현 ,  박재현

IPC: H01Q1/38 ,  H01Q5/15

CPC classification number: H01Q9/0421 ,  H01Q1/38 ,  H01Q5/40 ,  H01Q9/045 ,  H01Q21/30

Abstract: PURPOSE: According to the infinite wave antenna apparatus is the infinite wavelength characteristic, by practicing operation it has nothing to do with the size of the infinite wave antenna apparatus, the frequency band for the resonance is decided. CONSTITUTION: The substrate body(110) having planar stack is formed into dielectric. The feed portion(120) is arranged in the single-side of the substrate body. In the feed portion is the power feed process, the magnetic field is formed. In a part of the MNG resonant cavity(130) is the substrate body, it is located within the magnetic field. The MNG resonant cavity is grounded through both end part. In the MNG resonant cavity is the magnetic field form process, it resonates in the constant frequency band.

Abstract translation: 目的：根据无限波天线设备的无限波长特性，通过实践操作与无限波天线设备的大小无关，共振频带决定。 构成：具有平面叠层的基板主体（110）形成为电介质。 进料部分（120）布置在基体的单侧上。 在馈电部分是供电过程，形成磁场。 在MNG谐振腔（130）的一部分中是衬底主体，它位于磁场内。 MNG谐振腔通过两端部接地。 在MNG谐振腔是磁场形成过程，它在恒定频带谐振。

公开(公告)号：KR1020100035624A

公开(公告)日：2010-04-05

申请号：KR1020090091212

申请日：2009-09-25

Applicant: 삼성전자주식회사

Inventor： 박재현 ,  정명렬 ,  차영덕 ,  박준석

IPC: G02F1/13357

CPC classification number: G02F1/133615 ,  G02B6/0068 ,  G02B6/0073 ,  G02B6/0085 ,  G02B6/009 ,  G02F1/133603 ,  G02F2001/133628 ,  G02F2201/46 ,  G02F1/1336

Abstract: PURPOSE: A liquid crystal display and a television apparatus including thereof are provided to properly cool a light source by transmitting the heat of an LED to a frame through a metal substrate. CONSTITUTION: A liquid crystal display comprises the following: an LCD(liquid crystal display) panel(130) displaying an image; a back light unit(200) supplying the light to the LCD(liquid crystal display) panel; cases(110,120) fixing the LCD panel and the back light unit; a LED(light emitting diode) module(210) and a frame(220) included in the back light unit; and plural LEDs(211) and a metal substrate(212) included in the LED module. The plural LEDs are installed on the metal substrate. The LED module is installed on the frame.

Abstract translation: 目的：提供一种液晶显示器及其电视设备，通过将LED的热量通过金属基板传送到框架来适当地冷却光源。 构成：液晶显示器包括：显示图像的LCD（液晶显示器）面板（130）; 将光提供给LCD（液晶显示器）面板的背光单元（200）; 固定LCD面板和背光单元的情况（110,120）; 包括在背光单元中的LED（发光二极管）模块（210）和框架（220） 和多个LED（211）和包括在LED模块中的金属基板（212）。 多个LED安装在金属基板上。 LED模块安装在框架上。

公开(公告)号：KR1020090103564A

公开(公告)日：2009-10-01

申请号：KR1020080029247

申请日：2008-03-28

Applicant: 삼성전자주식회사

Inventor： 고승필 ,  오재희 ,  박정훈 ,  송윤종 ,  박재현 ,  임동원

IPC: H01L27/115

CPC classification number: H01L45/144 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1683 ,  G11C13/0004

Abstract: PURPOSE: A phase change memory device and a manufacturing method thereof are provided to minimize influence of a different cell due to a heat generated in one cell. CONSTITUTION: A semiconductor device includes an insulation film, a first electrode, a second electrode, a first phase change material pattern, and a second phase change material pattern. The insulation film is formed on a substrate(1). The first electrode is provided inside the insulation film, and has a first top surface(S1) and a second top surface(S2). The second electrode is provided inside the insulation film, is separated from the first electrode as a first distance, and has a third top surface and a fourth top surface. The first phase change material pattern covers a part of the first top surface of the first electrode. The second phase change material pattern covers a part of the third top surface of the second electrode.

Abstract translation: 目的：提供一种相变存储器件及其制造方法，以最小化由于在一个单元中产生的热而导致的不同单元的影响。 构成：半导体器件包括绝缘膜，第一电极，第二电极，第一相变材料图案和第二相变材料图案。 绝缘膜形成在基板（1）上。 第一电极设置在绝缘膜的内部，并且具有第一顶表面（S1）和第二顶表面（S2）。 第二电极设置在绝缘膜的内部，与第一电极分离为第一距离，并且具有第三顶表面和第四顶表面。 第一相变材料图案覆盖第一电极的第一顶表面的一部分。 第二相变材料图案覆盖第二电极的第三顶表面的一部分。

公开(公告)号：KR1020090041770A

公开(公告)日：2009-04-29

申请号：KR1020070107438

申请日：2007-10-24

Applicant: 삼성전자주식회사

Inventor： 박은석 ,  이정해 ,  김영일 ,  김종석 ,  윤익재 ,  류영호 ,  박재현

IPC: H01P3/08

CPC classification number: H03J3/20 ,  H01Q1/38 ,  H01Q13/20 ,  H03J3/16

Abstract: A line structure and a method for manufacturing the same are provided to tune a resonant frequency by changing the capacitance through a ferroelectric layer. A line structure includes a ferroelectric layer(130), an inductor(120-1) and a capacitor. The ferroelectric layer is formed in at least one surface of a substrate(110). A dielectric constant of the ferroelectric layer is changed according to the size of the applied electric potential. A capacitor includes the capacitance corresponding to the dielectric constant of the ferroelectric layer and the substrate. The capacitor includes a first electrode(120-2) and a second electrode(140). The first electrode is formed in one side of the substrate. The second electrode is formed in the other side of the substrate. The inductor is formed in one side of the substrate. The inductor has a meander or spiral shape.

Abstract translation: 提供一种线结构及其制造方法，用于通过铁电层改变电容来调谐谐振频率。 线结构包括铁电层（130），电感器（120-1）和电容器。 铁电层形成在基板（110）的至少一个表面上。 铁电层的介电常数根据施加电位的大小而变化。 电容器包括对应于铁电层和基板的介电常数的电容。 电容器包括第一电极（120-2）和第二电极（140）。 第一电极形成在基板的一侧。 第二电极形成在基板的另一侧。 电感器形成在基板的一侧。 电感器具有曲折或螺旋形状。

公开(公告)号：KR1020090036384A

公开(公告)日：2009-04-14

申请号：KR1020070101543

申请日：2007-10-09

Applicant: 삼성전자주식회사

Inventor： 박재현 ,  오재희

IPC: H01L27/115

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/144

Abstract: A phase change memory device and the manufacturing method are provided to improve the degree of integration by self-aligning phase change material patterns of cell diodes and the diodes by via holes. The interlayer insulating film(14) is formed on the top of the semiconductor substrate(10). The via hole(14h) is formed in the interlayer insulating film. The first and second semiconductor patterns(16n,16p) are successively laminated inside the lower region of the via hole. The phase change material pattern(24') is formed in order to fill up the via hole of the upper part of the cell diode electrode. The bit line(BL1, BL2) having phase change material pattern is formed on the top of substrate. The phase change material pattern within the via hole with the via hole is self-aligned by the first and second semiconductor patterns.

Abstract translation: 提供了一种相变存储器件和制造方法，以通过通孔自对准单元二极管和二极管的相变材料图案来提高积分度。 层间绝缘膜（14）形成在半导体衬底（10）的顶部上。 通孔（14h）形成在层间绝缘膜中。 第一和第二半导体图案（16n，16p）依次层叠在通孔的下部区域内。 形成相变材料图案（24'）以便填充单电池二极管电极的上部的通孔。 具有相变材料图案的位线（BL1，BL2）形成在基板的顶部。 具有通孔的通孔内的相变材料图案通过第一和第二半导体图案自对准。

公开(公告)号：KR1020080071305A

公开(公告)日：2008-08-04

申请号：KR1020070009348

申请日：2007-01-30

Applicant: 삼성전자주식회사

Inventor： 박재현

IPC: H04L29/02 ,  H04L12/56 ,  H04L12/28 ,  H04L29/08

CPC classification number: H04W4/06 ,  H04W72/005 ,  H04W76/40

Abstract: An apparatus and a method for activating a multicast service in a mobile communication system are provided to enhance efficiency by reducing consumption of wireless resources. A communication module(510) communicates with another node. A control unit(520) checks presence of particular information for indicating a broadcast and multicast service in a particular message received from a terminal through the communication module. The control unit operates a timer after a broadcast and multicast service process when detecting the particular information. The control unit releases the resource connected to the terminal in order to transmit the message after the timer is finished. A storage unit(540) provides a storage space necessary for operating the control unit.

Abstract translation: 提供了一种用于在移动通信系统中激活多播服务的装置和方法，以通过减少无线资源的消耗来提高效率。 通信模块（510）与另一节点通信。 控制单元（520）通过通信模块检查从终端接收的特定消息中的用于指示广播和多播服务的特定信息的存在。 当检测到特定信息时，控制单元在广播和多播服务处理之后操作定时器。 控制单元释放连接到终端的资源，以便在定时器完成后发送消息。 存储单元（540）提供操作控制单元所需的存储空间。

公开(公告)号：KR100835275B1

公开(公告)日：2008-06-05

申请号：KR1020040063641

申请日：2004-08-12

Applicant: 삼성전자주식회사

Inventor： 정원철 ,  김기남 ,  정홍식 ,  정기태 ,  박재현

IPC: G11C11/15

CPC classification number: G11C11/16

Abstract: 스핀 주입 메카니즘을 사용하여 자기램 소자를 프로그램시키는 방법들이 제공된다. 이 방법들은 집적회로 기판 상에 제공되는 복수개의 자기터널 접합 구조체들중 어느 하나에 선택적으로 메인 쓰기 전류를 가하는 것(forcing)을 구비한다. 상기 메인 쓰기 전류는 상기 선택된 자기터널 접합 구조체의 자유층(free layer)으로부터 상기 선택된 자기터널 접합 구조체의 고정층(pinned layer)을 향하여 흐르는 양의 쓰기 전류(positive writing current)이거나 상기 선택된 자기터널 접합 구조체의 고정층으로부터 상기 선택된 자기터널 접합 구조체의 자유층을 향하여 흐르는 음의 쓰기 전류이다. 상기 메인 쓰기 전류를 가하는 동안 상기 선택된 자기터널 접합 구조체의 자화곤란 자계(hard magnetic field)를 생성시키어 상기 선택된 자유층 내의 자기 분극들을 상기 선택된 고정층 내의 자기 분극들에 평행하거나 반평행하도록 배열시킨다.

公开(公告)号：KR1020080034601A

公开(公告)日：2008-04-22

申请号：KR1020060100760

申请日：2006-10-17

Applicant: 삼성전자주식회사

Inventor： 김남중 ,  박재현

IPC: H01L21/336

Abstract: A method for forming a gate of a semiconductor memory device using an end pointer detecting device is provided to avoid fluctuation of a cell current by avoiding generation of undercut or fail of a gate. A gate oxide layer(202), a polysilicon layer(204) and a tungsten silicide layer(206) are sequentially deposited on a silicon substrate(200). A mask pattern is formed on the tungsten silicide layer. While using the mask pattern as an etch mask, a point of time when the polysilicon layer is exposed is set as an end pointer by using etchant having good etch selectivity with respect to an oxide layer and a high etch rate with respect to tungsten silicide so that a main etch process is performed on the tungsten silicide layer. A predetermined thickness of the polysilicon layer is over-etched by using etchant having good etch selectivity with respect to an oxide layer and a high etch rate with respect to polysilicon. While using etchant having good etch selectivity with respect to an oxide layer and a high etch rate with respect to polysilicon, a point of time when the oxide layer is exposed is set as an end pointer to perform a main etch process on the polysilicon layer. The polysilicon layer is over-etched by using etchant having good etch selectivity with respect to an oxide layer and a high etch rate with respect to polysilicon. The etchant used in etching the tungsten silicide layer and the polysilicon layer can be SF6/Cl2.

Abstract translation: 提供一种使用端指针检测装置形成半导体存储器件的栅极的方法，以避免产生栅极的底切或失败的电池电流的波动。 栅极氧化物层（202），多晶硅层（204）和硅化钨层（206）依次沉积在硅衬底（200）上。 在硅化钨层上形成掩模图案。 当使用掩模图案作为蚀刻掩模时，通过使用相对于氧化物层具有良好蚀刻选择性的蚀刻剂和相对于硅化钨的高蚀刻速率，将多晶硅层暴露的时间点设置为终点指针 在硅化钨层上进行主蚀刻工艺。 通过使用相对于氧化物层具有良好蚀刻选择性的蚀刻剂和相对于多晶硅的高蚀刻速率来蚀刻多晶硅层的预定厚度。 虽然使用相对于氧化物层具有良好蚀刻选择性的蚀刻剂和相对于多晶硅的高蚀刻速率，但是将氧化物层暴露的时间点设置为端指针，以对多晶硅层执行主蚀刻工艺。 通过使用相对于氧化物层具有良好蚀刻选择性的蚀刻剂和相对于多晶硅的高蚀刻速率，多晶硅层被过度蚀刻。 用于蚀刻硅化钨层和多晶硅层的蚀刻剂可以是SF6 / Cl2。

公开(公告)号：KR1020080026859A

公开(公告)日：2008-03-26

申请号：KR1020060091960

申请日：2006-09-21

Applicant: 삼성전자주식회사

Inventor： 하성엽 ,  유재민 ,  박재현 ,  임지운 ,  정영천 ,  윤인구 ,  문정호 ,  임병철

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L27/11521 ,  H01L21/28141 ,  H01L21/28273 ,  H01L21/31051 ,  H01L21/76897

Abstract: A method for manufacturing a non-volatile memory device is provided to uniformly form a tunneling insulating layer by evenly forming a side profile of a floating gate. An insulating layer and a conducting layer for a floating gate are deposited on a semiconductor substrate(100), and then are patterned to form a gate insulating layer(210) and a floating gate(220). A spacer(310) is formed on one side of the floating gate, and the substrate is subjected to an oxidation process to form an integrated insulating layer(230), and then the spacer is removed. The substrate is subjected to an oxidation process to form a tunneling insulating layer on the substrate and at one side of the floating gate. A control gate is formed on the floating gate, a source region is formed at one side of the floating gate, and then a drain region is formed at one side of the control gate.

Abstract translation: 提供一种用于制造非易失性存储器件的方法，通过均匀地形成浮动栅极的侧面轮廓来均匀地形成隧道绝缘层。 绝缘层和用于浮置栅极的导电层沉积在半导体衬底（100）上，然后被图案化以形成栅绝缘层（210）和浮栅（220）。 在浮置栅极的一侧上形成间隔物（310），并对衬底进行氧化处理以形成一体的绝缘层（230），然后移除间隔物。 对衬底进行氧化处理，以在衬底上和浮栅的一侧形成隧道绝缘层。 在浮置栅极上形成控制栅极，在浮置栅极的一侧形成源极区域，然后在控制栅极的一侧形成漏极区域。

公开(公告)号：KR1020080008865A

公开(公告)日：2008-01-24

申请号：KR1020060068672

申请日：2006-07-21

Applicant: 삼성전자주식회사

Inventor： 박재현

IPC: G06F3/12 ,  G06F15/00

Abstract: A network image forming apparatus and an auto setting method of the service set identifier(SSID) are provided to set up SSID necessary for wireless communication automatically, continue to perform wireless communication as automatically changing and setting up SSID even though SSID is changed, and perform wireless communication through security setting inducement of a user as information acquisition for security setting is easy. According to service location protocol(SLP), a network image forming apparatus includes the following steps: a transmitting and receiving part(110, 120) which transmits a service request packet and receives a directory agent advertisement(DAAdver) packet; and a SSID setting part(130) which sets up SSID as using information included in the DAAdver packet.

Abstract translation: 提供服务集标识符（SSID）的网络图像形成装置和自动设置方法以自动建立无线通信所需的SSID，即使SSID改变，也继续执行无线通信，自动更改和设置SSID，并执行 无线通信安全设置诱导用户作为安全设置的信息获取容易。 根据服务位置协议（SLP），网络图像形成装置包括以下步骤：发送和接收部分（110,120），其发送服务请求分组并接收目录代理广告（DAAdver）分组; 以及将SSID设置为使用包括在DAAdver分组中的信息的SSID设置部分（130）。