公开(公告)号：WO2012024310A3

公开(公告)日：2012-05-31

申请号：PCT/US2011047942

申请日：2011-08-16

Applicant: ADVANCED TECH MATERIALS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

Inventor： KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

IPC: C01B35/06 ,  C01B9/08

CPC classification number: C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 一种同位素富集的含硼化合物，其包含两个或更多个硼原子和至少一个氟原子，其中至少一个硼原子含有浓度或比率大于天然丰度浓度或其比率的所需硼同位素 。 该化合物可以具有B2F4的化学式。 描述了这些化合物的合成方法，以及使用这些化合物的离子注入方法，以及储存和分配容器，其中富含同位素的含硼化合物有利地包含在随后的分配用途中。

公开(公告)号：WO2011155917A1

公开(公告)日：2011-12-15

申请号：PCT/US2010/032016

申请日：2010-04-22

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  GODET, Ludovic ,  RADOVANOV, Svetlana ,  MILLER, Timothy, J.

Inventor： GODET, Ludovic ,  RADOVANOV, Svetlana ,  MILLER, Timothy, J.

IPC: H01J37/08 ,  H01J37/32 ,  H01J27/02

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/09 ,  H01J2237/0451 ,  H01J2237/0453 ,  H01J2237/0456 ,  H01J2237/065 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/31 ,  H01J2237/31701 ,  Y10S438/961

Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Abstract translation: 离子源包括具有提取孔的电弧室和等离子体鞘调制器。 等离子体鞘调制器被配置为控制等离子体和靠近提取孔的等离子体鞘之间的边界的形状。 等离子体鞘调制器可以包括位于电弧室中的一对绝缘体，并且间隔开位于靠近提取孔的间隙。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。

公开(公告)号：WO2009155500A3

公开(公告)日：2010-04-15

申请号：PCT/US2009047929

申请日：2009-06-19

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  DORAI RAJESH ,  KURUNCZI PETER E ,  PEREL ALEXANDER S ,  PLATOW WILHELM P

Inventor： DORAI RAJESH ,  KURUNCZI PETER E ,  PEREL ALEXANDER S ,  PLATOW WILHELM P

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J2237/024 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542

Abstract: An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

Abstract translation: 一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。 电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。 电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。 多个致动器连接到多个电极段，用于移动一个或多个段。 通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

公开(公告)号：WO2008099218A1

公开(公告)日：2008-08-21

申请号：PCT/GB2008/050098

申请日：2008-02-15

Applicant: NORDIKO TECHNICAL SERVICES LIMITED ,  HOLMES, Andrew James Timothy ,  DAVIS, Mervyn Howard

Inventor： HOLMES, Andrew James Timothy ,  DAVIS, Mervyn Howard

IPC: H01J37/15 ,  H01J37/04 ,  H01J37/02

CPC classification number: H01J37/305 ,  H01J27/024 ,  H01J37/20 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/036 ,  H01J2237/038 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/08 ,  H01J2237/3142 ,  H01J2237/3151

Abstract: An apparatus (100) for accelerating an ion beam, comprising at least one electrode (102, 104, 106) mouted in a moveable mount (112, 114).

Abstract translation: 一种用于加速离子束的装置（100），包括至少一个在可移动的安装座（112,114）内被排出的电极（102,104,106）。

公开(公告)号：WO2008090512A1

公开(公告)日：2008-07-31

申请号：PCT/IB2008/050216

申请日：2008-01-22

Applicant: ELEMENT SIX LIMITED ,  DONALD, Heather June ,  WORT, Christopher John Howard ,  SCARSBROOK, Geoffrey Alan ,  FRIEL, Ian ,  BALMER, Richard Stuart

Inventor： WORT, Christopher John Howard ,  SCARSBROOK, Geoffrey Alan ,  FRIEL, Ian ,  BALMER, Richard Stuart

IPC: H01L29/812 ,  C30B25/20 ,  C30B29/04 ,  C23C14/02 ,  C23C16/27 ,  H01L21/04 ,  H01L29/16 ,  C23C14/58

CPC classification number: C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

Abstract: Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.

Abstract translation: 公开了电子场效应装置及这些电子场效应装置的制造方法。 特别地，公开了一种电子场效应器件，其由于由金刚石与极性材料组合形成的简单结构中形成高度移动的二维电荷载体气体而具有改善的电性能。

公开(公告)号：WO2008085405A1

公开(公告)日：2008-07-17

申请号：PCT/US2007/026150

申请日：2007-12-20

Applicant: AXCELIS TECHNOLOGIES, INC. ,  YONGZHANG, Huang ,  WEIGUO, Que ,  JINCHENG, Zhang

Inventor： YONGZHANG, Huang ,  WEIGUO, Que ,  JINCHENG, Zhang

IPC: H01J37/08 ,  H01J37/248 ,  H01J37/302

CPC classification number: H01J37/248 ,  H01J37/045 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/0432 ,  H01J2237/08

Abstract: The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

Abstract translation: 本发明涉及一种束控制电路和方法，用于通过降低离子束的占空比来最小化离子注入系统中的颗粒污染。 在一个实施例中，光束控制电路包括与电源和离子注入系统的离子源部分串联连接的高电压开关，其中开关可操作以中断或重新建立电源和电源之间的连接 离子源包括用于等离子体生产的电极。 光束控制电路还包括开关控制器，其可操作以通过在开始离子注入之前控制开关闭合并且在完成植入之后或在不需要光束的其他时间来控制离子束的占空因数， 从而最大程度地减少波束占空比和颗粒污染。 光束控制技术可以应用于晶片掺杂注入和占空因数降低。 高压开关的保护电路可以吸收反应性元件的能量并夹紧任何过电压。

公开(公告)号：WO2008070453A2

公开(公告)日：2008-06-12

申请号：PCT/US2007085320

申请日：2007-11-21

Applicant: SEMEQUIP INC ,  DOUGLAS ADAMS

Inventor： DOUGLAS ADAMS

IPC: F24F6/08

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/08 ,  Y10T137/8593

Abstract: Vapor delivery systems and methods that control the heating and flow of vapors from solid feed material, especially material that comprises cluster molecules for semiconductor manufacture. The systems and methods safely and effectively conduct the vapor to a point of utilization, especially to an ion source for ion implantation. Ion beam implantation is shown employing ions from the cluster materials. The vapor delivery system includes reactive gas cleaning of the ion source, control systems and protocols, wide dynamic range flow-control systems and vaporizer selections that are efficient and safe. Borane, decarborane, carboranes, carbon clusters and other large molecules are vaporized for ion implantation. Such systems are shown cooperating with novel vaporizers, ion sources, and reactive cleaning systems.

Abstract translation: 控制来自固体进料的蒸气的加热和流动的蒸气输送系统和方法，特别是包含用于半导体制造的聚簇分子的材料。 这些系统和方法安全有效地将蒸汽传导到一个利用点，特别是离子源的离子源。 示出了离子束注入使用来自簇材料的离子。 蒸汽输送系统包括离子源的反应气体清洁，控制系统和协议，宽动态范围流量控制系统和有效和安全的蒸发器选择。 硼烷，癸二硼烷，碳硼烷，碳簇和其他大分子蒸发用于离子注入。 示出了这样的系统与新型蒸发器，离子源和反应性清洁系统协作。

公开(公告)号：WO2007146904A2

公开(公告)日：2007-12-21

申请号：PCT/US2007/070941

申请日：2007-06-12

Applicant: SEMEQUIP, INC. ,  SACCO, George ,  OVED, Dror ,  ADAMS, Douglas, R. ,  HARNETT, David, J. ,  HORSKY, Thomas, N.

Inventor： SACCO, George ,  OVED, Dror ,  ADAMS, Douglas, R. ,  HARNETT, David, J. ,  HORSKY, Thomas, N.

IPC: B01D1/02

CPC classification number: C23C14/48 ,  C23C14/228 ,  H01J37/02 ,  H01J37/32412 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/08 ,  H01J2237/31701

Abstract: A vaporizer unit to heat solid feed material to a temperature that produces vapor to be ionized, has efficient construction and numerous effective safety features. The heater is located in a detachable top closure member, and serves to maintain a valve in the top closure member at temperature higher than the temperature to which the solid material is heated. The top section is a heat distributor to an interface with the bottom section, the side and bottom walls of the bottom distributing heat received from the interface to surfaces of the cavity exposed to the feed material. Borane, decarborane, carbon clusters and other large molecules are vaporized for ion implantation.

Abstract translation: 将固体原料加热至产生要离子化的蒸汽的温度的蒸发器单元，具有有效的结构和许多有效的安全特征。 加热器位于可拆卸顶部封闭构件中，并且用于在高于固体材料被加热的温度的温度下将阀门保持在顶部封闭构件中。 顶部是与底部部分的界面的热分配器，底部的侧壁和底壁分配从暴露于进料的空腔的界面的表面接收的热量。 硼烷，癸二硼烷，碳簇等大分子被蒸发用于离子注入。

公开(公告)号：WO2007146888A2

公开(公告)日：2007-12-21

申请号：PCT/US2007/070900

申请日：2007-06-11

Applicant: SEMEQUIP, INC. ,  ADAMS, Douglas, R. ,  SINCLAIR, Frank ,  COPERTINO, Brent, M.

Inventor： ADAMS, Douglas, R. ,  SINCLAIR, Frank ,  COPERTINO, Brent, M.

IPC: B01D1/26

CPC classification number: C23C14/48 ,  C23C14/228 ,  H01J37/02 ,  H01J37/32412 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/08 ,  H01J2237/31701

Abstract: Providing vapor to a vapor-receiving device housed in a high vacuum chamber. An ion beam implanter, as an example, has a removable high voltage ion source within a high vacuum chamber and a vapor delivery system that delivers vapor to the ion source and does not interfere with removal of the ion source for maintenance. For delivering vapor to a vapor-receiving device, such as the high voltage ion source under vacuum, a flow interface device is in the form of a thermally conductive valve block. A delivery extension of the interface device automatically connects and disconnects within the high vacuum chamber with the removable vapor receiving device by respective installation and removal motions. In an ion implanter, the flow interface device or valve block and source of reactive cleaning gas are mounted in a non-interfering way on the electrically insulating bushing that insulates the ion source from the vacuum housing and the ion source may be removed without disturbing the flow interface device. Multiple vaporizers for solid material, provisions for reactive gas cleaning, and provisions for controlling flow are provided in the flow interface device.

Abstract translation: 向容纳在高真空室中的蒸汽接收装置提供蒸汽。 作为示例，离子束注入机在高真空室内具有可移除的高电压离子源，以及将蒸气输送到离子源并且不干扰离子源的去除以进行维护的蒸气输送系统。 为了将蒸汽输送到蒸汽接收装置，例如在真空下的高压离子源，流动接口装置是导热阀块的形式。 接口设备的传送延伸部通过相应的安装和移除动作，利用可移除的蒸气接收装置自动地在高真空室内连接和断开。 在离子注入机中，流动界面装置或阀块和反应性清洁气体源以非干扰的方式安装在电绝缘衬套上，该电绝缘衬套使离子源与真空壳体绝缘，并且离子源可被去除而不会干扰 流接口设备。 在流体接口装置中提供了用于固体材料的多个蒸发器，用于反应性气体清洁的设备和用于控制流量的设备。

公开(公告)号：WO2005081920A2

公开(公告)日：2005-09-09

申请号：PCT/US2005/005537

申请日：2005-02-22

Applicant: VEECO INSTRUMENTS, INC. ,  BURTNER, David, Matthew ,  TOWNSEND, Scott, A. ,  SIEGFRIED, Daniel, E. ,  ZHURIN, Viacheslav, V.

Inventor： BURTNER, David, Matthew ,  TOWNSEND, Scott, A. ,  SIEGFRIED, Daniel, E. ,  ZHURIN, Viacheslav, V.

IPC: H01J7/24

CPC classification number: H01J27/04 ,  H01J2237/002 ,  H01J2237/08

Abstract: An ion source is cooled using a cooling plate that is separate and independent of the anode. The cooling plate forms a coolant cavity through which a fluid coolant (e.g., liquid or gas) can flow to cool the anode. In such configurations, the magnet may be thermally protected by the cooling plate. A thermally conductive material in a thermal transfer interface component can enhance the cooling capacity of the cooling plate. Furthermore, the separation of the cooling plate and the anode allows the cooling plate and cooling lines to be electrically isolated from the high voltage of the anode (e.g., using a thermally conductive, electrically insulating material). Combining these structures into an anode subassembly and magnet subassembly can also facilitate assembly and maintenance of the ion source, particularly as the anode is free of coolant lines, which can present some difficulty during maintenance.

Abstract translation: 使用独立于阳极的冷却板来冷却离子源。 冷却板形成冷却剂腔，流体冷却剂（例如，液体或气体）可通过其流动以冷却阳极。 在这种构造中，磁体可以被冷却板热保护。 传热接口部件中的导热材料可以提高冷却板的冷却能力。 此外，冷却板和阳极的分离允许冷却板和冷却线与阳极的高电压（例如，使用导热的电绝缘材料）电隔离。 将这些结构组合到阳极子组件和磁体子组件中也可以促进离子源的组装和维护，特别是当阳极没有冷却剂管线时，这在维护过程中可能存在一些困难。