公开(公告)号：KR1020140100442A

公开(公告)日：2014-08-14

申请号：KR1020140013114

申请日：2014-02-05

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마와쿠준 ,  고시미즈치시오 ,  다치바나미츠히로 ,  가토히토시 ,  고바야시다케시 ,  미우라시게히로 ,  기무라다카후미

IPC: H01L21/687 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01L21/68714

Abstract: A bias electrode (120) is arranged in a position which faces a reforming region (S1) in the lower part of a rotation table (2). A faraday shield (95) is arranged in the front part of the reforming region (S1). A bias electric field is formed in the reforming region (S1) by the capacitive coupling of the bias electrode (120) and the faraday shield (95). And, with regard to the bias electrode (120), a width dimension (t) in the rotation direction of the rotation table (2) is smaller than the separation demission (d) between adjacent wafers, thereby preventing the bias electric field from being simultaneously applied to the adjacent wafers and individually forming a bias electric field with regard to each wafer.

Abstract translation: 偏置电极（120）配置在与旋转台（2）的下部的重整区域（S1）相对的位置。 在重整区域（S1）的前部设有法拉第罩（95）。 通过偏置电极（120）和法拉第屏蔽（95）的电容耦合，在重整区（S1）中形成偏置电场。 并且，关于偏置电极（120），旋转台（2）的旋转方向的宽度尺寸（t）小于相邻晶片间的分离离子（d），从而防止偏置电极 同时施加到相邻晶片并且相对于每个晶片分别形成偏置电场。

公开(公告)号：KR1020140077841A

公开(公告)日：2014-06-24

申请号：KR1020130153691

申请日：2013-12-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마와쿠준 ,  고시미즈치시오 ,  야마자와요헤이 ,  다치바나미츠히로 ,  가토히토시 ,  고바야시다케시 ,  미우라시게히로 ,  기무라다카후미

IPC: H01L21/687 ,  C23C16/458 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01J37/321 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film formation apparatus, which is configured to conduct a film formation process for a substrate in a vacuum chamber, includes a rotating table configured to revolve a substrate loading area configured to load a substrate thereon; a film formation area configured to include a process gas supply part configured to supply a process gas to the substrate mounting area and sequentially laminate a molecular layer or an atomic layer on the substrate with rotation of the rotating table to form a thin film; a plasma processing part configured to conduct modification processing on the molecular layer or the atomic layer by plasma produced through plasma formation of a gas for plasma generation in a plasma generation area formed separately from the film formation area in a direction of rotation of the rotating table; a lower bias electrode provided at a lower side of the height position of the substrate on the rotating table to attract ions in the plasma to a surface of the substrate; an upper bias electrode arranged at the same height position or an upper side of the height position of the substrate; a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled through the plasma generation area; and an exhaust device configured to evacuate inside of the vacuum chamber.

Abstract translation: 构造成在真空室中进行基板的成膜处理的成膜装置包括旋转台，被配置为旋转被配置为在其上装载基板的基板装载区域; 成膜区域，其被配置为包括处理气体供给部，其被配置为向所述基板安装区域提供处理气体，并且通过所述旋转台的旋转顺序地将所述基板上的分子层或原子层层叠以形成薄膜; 等离子体处理部，其被配置为通过等离子体形成等离子体形成等离子体生成等离子体生成等离子体生成区域，使其在分子层或原子层上进行改性处理，所述等离子体产生区域与所述成膜区域分开地形成在所述旋转台的旋转方向上 ; 下偏置电极，设置在旋转台上的基板的高度位置的下侧，以将等离子体中的离子吸引到基板的表面; 布置在所述基板的高度位置的相同高度位置或上侧的上偏置电极; 连接到所述下偏置电极和所述上偏置电极中的至少一个的高频电源部，并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述基板上形成偏置电位 通过等离子体发生区域; 以及构造成在真空室内抽真空的排气装置。

公开(公告)号：KR1020150098203A

公开(公告)日：2015-08-27

申请号：KR1020150022365

申请日：2015-02-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미우라시게히로 ,  가토히토시 ,  사토준 ,  고바야시다케시 ,  요네자와마사토

IPC: H01L21/02 ,  H01L21/205

CPC classification number: H01J37/32532 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/205

Abstract: 본 발명은 소정의 출력을 갖는 제1 고주파 전력을 전극에 공급해서 플라즈마를 발생시키고, 피처리체(W)에 플라즈마 처리를 행하는 플라즈마 처리 장치의 운전 방법이며, 상기 플라즈마 처리 장치의 전회의 운전 종료로부터의 시간 간격이 소정 간격을 초과했을 때에, 상기 소정의 출력보다도 작은 출력을 갖는 제2 고주파 전력을 상기 전극에 공급하는 전하 축적 공정을 행하고 나서 상기 플라즈마 처리를 행한다.

Abstract translation: 本发明提供一种等离子体处理装置的操作方法，其将具有设定输出的第一高频功率提供给电极以产生等离子体，并且对目标体（W）执行等离子体处理。 当在等离子体处理装置的先前操作结束之后经过设定的时间段时，执行向电极提供具有小于设定输出的输出的第二高频功率的电荷累积处理，然后执行等离子体处理。