中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.031 seconds)

    플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법
    4.
    发明公开
    플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법 有权
    等离子体处理装置，等离子体生成装置，天线结构和等离子体生成方法

    公开(公告)号：KR1020130139779A

    公开(公告)日：2013-12-23

    申请号：KR1020130066588

    申请日：2013-06-11

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 야마자와요헤이 ,  덴포가즈키 ,  기무라다카후미 ,  고시미즈치시오 ,  사사키가즈오 ,  나이토하지메 ,  후루야아츠키

    IPC: H05H1/46 ,  H01L21/205 ,  H01L21/3065

    CPC classification number: H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32183 ,  H05H1/46

    Abstract: A plasma treatment apparatus is provided, which is capable of simplifying the configuration thereof and preventing the deterioration of plasma generation efficiency. The plasma treatment apparatus (10) comprises: a chamber (11); a mount (12) arranged inside the chamber (11) to mount a substrate (S); an ICP antenna (13) arranged to be opposite to the mount (12) outside the chamber (11) and connected to a high-frequency power source (26); and a window member (14) interposed between the mount (12) and the ICP antenna (13) and made up of a conductor, wherein the window member (14) is divided into a plurality of segments (27) and the segments (27) are insulated from each other and connected to a wire (29) or a wire (30) having a condenser attached thereto to form a closed circuit (31).

    Abstract translation: 提供了一种等离子体处理装置，其能够简化其构造并且防止等离子体产生效率的劣化。 等离子体处理装置（10）包括：腔室（11）; 布置在所述腔室（11）内部以安装衬底（S）的安装件（12）; ICP天线（13），布置成与腔室（11）外部的安装件（12）相对并连接到高频电源（26）; 以及插入在所述安装件（12）和所述ICP天线（13）之间并由导体构成的窗构件（14），其中所述窗构件（14）被分成多个段（27）和所述段（27） ）彼此绝缘并且连接到具有连接到其上的冷凝器的线（29）或线（30）以形成闭合回路（31）。

    플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법
    5.
    发明授权
    플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법 有权
    等离子体处理设备，等离子体生成设备，天线结构和等离子体生成方法

    公开(公告)号：KR101718182B1

    公开(公告)日：2017-03-20

    申请号：KR1020130067634

    申请日：2013-06-13

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 야마자와요헤이 ,  덴포가즈키 ,  기무라다카후미 ,  고시미즈치시오

    IPC: H01J37/32 ,  H05H1/46

    Abstract: 장치의구성을간소화할수 있음과아울러, 플라즈마의생성효율의저하를방지할수 있는플라즈마처리장치를제공한다. 플라즈마처리장치(10)는, 챔버(11)와, 해당챔버(11)의내부에배치되고기판 S를탑재하는탑재대(12)와, 챔버(11)의외부에서탑재대(12)와대향하도록배치되고고주파전원(26)에접속되는 ICP 안테나(13)와, ICP 안테나(13)와대향하는챔버(11)의벽부를구성하고, 탑재대(12) 및 ICP 안테나(13)의사이에개재되는, 도전체로이루어지는창 부재(14)와, 창부재(14)에양단이접속되는도선(28)을구비하며, 창부재(14) 및도선(28)은폐회로를형성하고, 도선(28)은콘덴서(29)를가진다.

    Abstract translation: 提供一种能够简化装置结构并防止等离子体产生效率降低的等离子体处理装置。 等离子体处理装置10包括腔室11，配置在腔室11内用于载置基板S的载置台12， 以及连接到RF电源26和腔室11的面向ICP天线13的壁部分的ICP天线13.ICT天线13连接到ICP天线13， 窗部件14由导电材料制成，导线28连接到窗部件14的两端。窗部件14和导线28形成隐藏电路， 它有一个29。

    기판 처리 장치 및 성막 방법
    8.
    发明公开
    기판 처리 장치 및 성막 방법 有权
    基板处理装置和沉积膜的方法

    公开(公告)号：KR1020140100442A

    公开(公告)日：2014-08-14

    申请号：KR1020140013114

    申请日：2014-02-05

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 야마와쿠준 ,  고시미즈치시오 ,  다치바나미츠히로 ,  가토히토시 ,  고바야시다케시 ,  미우라시게히로 ,  기무라다카후미

    IPC: H01L21/687 ,  H01J37/32 ,  C23C16/455

    CPC classification number: C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01L21/68714

    Abstract: A bias electrode (120) is arranged in a position which faces a reforming region (S1) in the lower part of a rotation table (2). A faraday shield (95) is arranged in the front part of the reforming region (S1). A bias electric field is formed in the reforming region (S1) by the capacitive coupling of the bias electrode (120) and the faraday shield (95). And, with regard to the bias electrode (120), a width dimension (t) in the rotation direction of the rotation table (2) is smaller than the separation demission (d) between adjacent wafers, thereby preventing the bias electric field from being simultaneously applied to the adjacent wafers and individually forming a bias electric field with regard to each wafer.

    Abstract translation: 偏置电极（120）配置在与旋转台（2）的下部的重整区域（S1）相对的位置。 在重整区域（S1）的前部设有法拉第罩（95）。 通过偏置电极（120）和法拉第屏蔽（95）的电容耦合，在重整区（S1）中形成偏置电场。 并且，关于偏置电极（120），旋转台（2）的旋转方向的宽度尺寸（t）小于相邻晶片间的分离离子（d），从而防止偏置电极 同时施加到相邻晶片并且相对于每个晶片分别形成偏置电场。

    성막 장치, 기판 처리 장치 및 성막 방법
    9.
    发明公开
    성막 장치, 기판 처리 장치 및 성막 방법 有权
    薄膜成型装置，基板加工装置和薄膜成型方法

    公开(公告)号：KR1020140077841A

    公开(公告)日：2014-06-24

    申请号：KR1020130153691

    申请日：2013-12-11

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 야마와쿠준 ,  고시미즈치시오 ,  야마자와요헤이 ,  다치바나미츠히로 ,  가토히토시 ,  고바야시다케시 ,  미우라시게히로 ,  기무라다카후미

    IPC: H01L21/687 ,  C23C16/458 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02

    CPC classification number: H01J37/321 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

    Abstract: A film formation apparatus, which is configured to conduct a film formation process for a substrate in a vacuum chamber, includes a rotating table configured to revolve a substrate loading area configured to load a substrate thereon; a film formation area configured to include a process gas supply part configured to supply a process gas to the substrate mounting area and sequentially laminate a molecular layer or an atomic layer on the substrate with rotation of the rotating table to form a thin film; a plasma processing part configured to conduct modification processing on the molecular layer or the atomic layer by plasma produced through plasma formation of a gas for plasma generation in a plasma generation area formed separately from the film formation area in a direction of rotation of the rotating table; a lower bias electrode provided at a lower side of the height position of the substrate on the rotating table to attract ions in the plasma to a surface of the substrate; an upper bias electrode arranged at the same height position or an upper side of the height position of the substrate; a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled through the plasma generation area; and an exhaust device configured to evacuate inside of the vacuum chamber.

    Abstract translation: 构造成在真空室中进行基板的成膜处理的成膜装置包括旋转台，被配置为旋转被配置为在其上装载基板的基板装载区域; 成膜区域，其被配置为包括处理气体供给部，其被配置为向所述基板安装区域提供处理气体，并且通过所述旋转台的旋转顺序地将所述基板上的分子层或原子层层叠以形成薄膜; 等离子体处理部，其被配置为通过等离子体形成等离子体形成等离子体生成等离子体生成等离子体生成区域，使其在分子层或原子层上进行改性处理，所述等离子体产生区域与所述成膜区域分开地形成在所述旋转台的旋转方向上 ; 下偏置电极，设置在旋转台上的基板的高度位置的下侧，以将等离子体中的离子吸引到基板的表面; 布置在所述基板的高度位置的相同高度位置或上侧的上偏置电极; 连接到所述下偏置电极和所述上偏置电极中的至少一个的高频电源部，并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述基板上形成偏置电位 通过等离子体发生区域; 以及构造成在真空室内抽真空的排气装置。

    플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법
    10.
    发明公开
    플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법 有权
    等离子体加工设备，等离子体生产设备，天线结构和等离子体生产方法

    公开(公告)号：KR1020130140571A

    公开(公告)日：2013-12-24

    申请号：KR1020130067634

    申请日：2013-06-13

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 야마자와요헤이 ,  덴포가즈키 ,  기무라다카후미 ,  고시미즈치시오

    IPC: H01J37/32 ,  H05H1/46

    CPC classification number: H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32192 ,  H05H1/46

    Abstract: A plasma treatment apparatus is provided, which is capable of simplifying the configuration thereof and preventing the deterioration of plasma generation efficiency. The plasma treatment apparatus (10) comprises: a chamber (11); a mount (12) arranged inside the chamber (11) to mount a substrate (S); an ICP antenna (13) arranged to be opposite to the mount (12) outside the chamber (11) and connected to a high-frequency power source (26); a window member (14) forming a wall portion of the chamber (11) facing the ICP antenna (13), interposed between the mount (12) and the ICP antenna (13) and made up of a conductor; a wire (28) having both ends connected to the window member (14), wherein the window member (14) and the wire (28) form a closed circuit and the wire (28) has a condenser (29).

    Abstract translation: 提供了一种等离子体处理装置，其能够简化其构造并且防止等离子体产生效率的劣化。 等离子体处理装置（10）包括：腔室（11）; 布置在所述腔室（11）内部以安装衬底（S）的安装件（12）; ICP天线（13），布置成与腔室（11）外部的安装件（12）相对并连接到高频电源（26）; 窗口构件（14），形成面对ICP天线（13）的室（11）的壁部，插入在安装件（12）和ICP天线（13）之间并由导体构成; 具有连接到窗构件（14）的两端的线（28），其中窗构件（14）和线（28）形成闭合回路，并且线（28）具有冷凝器（29）。

Patent Agency Ranking