公开(公告)号：KR1020070098587A

公开(公告)日：2007-10-05

申请号：KR1020070030130

申请日：2007-03-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠모토나오키 ,  하야카와요시노부 ,  하나오카히데토시 ,  고다마노리아키 ,  고시미즈치시오 ,  이와타마나부 ,  다나카사토시

IPC: H01L21/3065

CPC classification number: H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

Abstract: An apparatus for processing plasma and a method for processing the plasma are provided to improve the uniformity inside a surface of a process by voluntarily controlling the spatial distribution of plasma density. An apparatus for processing plasma includes a processing container(10), a first electrode, a second electrode, a processing gas supplying unit, and a first high frequency feeding power unit. The processing container(10) forms a vacuum by being exhausted. The first electrode is attached in a state of electrically floating through an insulator and a space inside the processing container(10). The second electrode supports a substrate to be processed by being opposite to the first electrode. The processing gas supplying unit supplies processing gas to a processing space between the first electrode and a side wall of the second electrode and the processing container(10). The first high frequency feeding power unit applies a first high frequency to the second electrode to generate the plasma of the processing gas on the processing space.

Abstract translation: 提供了一种用于处理等离子体的设备和用于处理等离子体的方法，以通过主动地控制等离子体密度的空间分布来改善工艺表面内部的均匀性。 一种用于处理等离子体的设备包括处理容器（10），第一电极，第二电极，处理气体供应单元和第一高频馈电功率单元。 处理容器（10）通过排出而形成真空。 第一电极通过绝缘体和处理容器（10）内部的空间电浮动的状态附接。 第二电极通过与第一电极相对的方式支撑要处理的衬底。 处理气体供给单元将处理气体供给到第一电极和第二电极的侧壁与处理容器（10）的处理空间。 第一高频馈电功率单元向第二电极施加第一高频以在处理空间上产生处理气体的等离子体。

公开(公告)号：KR1020070096864A

公开(公告)日：2007-10-02

申请号：KR1020070028146

申请日：2007-03-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼다마사노부 ,  마츠모토나오키 ,  다나카사토시 ,  마츠이유타카

IPC: H01L21/3065

CPC classification number: H01J37/32082 ,  H01J37/32532 ,  H01J37/32834

Abstract: A plasma processing apparatus and method and a storage medium are provided to prevent plasma from being leaked into an exhaust space by interrupting inflow of electrons into the exhaust space. A substrate processing chamber(11) has a processing space(PS) for a plasma process, an exhaust space(ES) exhausting a gas out of the processing space, and an exhaust flow path(16) communicating the exhaust space and the processing space. A ground component(16) is disposed in the exhaust flow path, and has a conduction portion(45) made of a conductive material. The conduction portion has an area exposed to the exhaust flow path in the range of 100 to 1000 cm^2.

Abstract translation: 提供等离子体处理装置和方法以及存储介质，以通过中断电子流入排气空间来防止等离子体泄漏到排气空间中。 基板处理室（11）具有用于等离子体处理的处理空间（PS），从处理空间排出气体的排气空间（ES）以及将排气空间与处理空间连通的排气流路 。 接地部件（16）设置在排气流路中，并且具有由导电材料制成的导电部（45）。 导电部分具有在100至1000cm 2的范围内暴露于排气流路的区域。