公开(公告)号：KR102049117B1

公开(公告)日：2019-11-26

申请号：KR1020130015821

申请日：2013-02-14

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나가세키가즈야 ,  이토에츠지 ,  요코타아키히로 ,  히모리신지 ,  마츠야마쇼이치로

IPC: H01L21/3065

公开(公告)号：KR1020150072342A

公开(公告)日：2015-06-29

申请号：KR1020140178468

申请日：2014-12-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다카야마와타루 ,  마츠야마쇼이치로 ,  노가미스스무 ,  다무라다이스케 ,  하야시교스케 ,  가와노베준

IPC: H01L21/3065 ,  H01L21/8247

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01L21/31144 ,  H01L21/32137 ,  H01L27/11582

Abstract: [과제] 다층막에형성되는홀과같은깊은스페이스의수직성을개선한다. [해결수단] 상호상이한유전율을갖고, 또한교대로적층된제1 막및 제2 막을포함하는다층막을, 플라즈마처리장치의처리용기내에서, 마스크를개재하여에칭하는반도체장치의제조방법이제공된다. 이방법은 (a) O가스혹은 N가스, 및희가스를포함하는제1 가스를상기처리용기내에공급하여, 그제1 가스를여기시키는공정과, (b) 플루오로카본가스또는플루오로하이드로카본가스를포함하는제2 가스를상기처리용기내에공급하여, 그제2 가스를여기시키는공정과, (c) HBr 가스, 불소함유가스, 및플루오로카본가스혹은플루오로하이드로카본가스를포함하는제3 가스를상기처리용기내에공급하여, 그제3 가스를여기시키는공정을포함하는시퀀스가반복해서실행된다.

Abstract translation: 本发明是为了改善诸如形成在多个膜中的孔的深空间的垂直度。 本发明提供一种半导体器件的制造方法，该半导体器件蚀刻包括具有不同介电常数的第一膜和第二膜的多个膜，并且通过在用于处理等离子体处理器件的容器中插入掩模而交替布置。 该方法包括以下处理：（a）向处理容器供给包括O_2气体或N_2气体的第一气体和稀释气体，并搅拌第一气体; （b）将包括碳氟化合物气体或氟代烃气体的第二气体供应到处理容器中，并搅拌第二气体; 和（c）将包括HBr气体，含氟化物气体和碳氟化合物气体或氟代烃气体的第三气体供应到处理容器中，并搅拌第三气体。 重复实现包括该过程的序列。

公开(公告)号：KR1020130093566A

公开(公告)日：2013-08-22

申请号：KR1020130015821

申请日：2013-02-14

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나가세키가즈야 ,  이토에츠지 ,  요코타아키히로 ,  히모리신지 ,  마츠야마쇼이치로

IPC: H01L21/3065

CPC classification number: H01L21/465 ,  C23C14/35 ,  C23C14/351 ,  C23C14/352 ,  H01J37/32091 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32688 ,  H01J37/345 ,  H01J37/3452 ,  H01L21/32136

Abstract: PURPOSE: A substrate processing apparatus is provided to simultaneously prevent charges from being accumulated on a gate electrode and to suppress the quantity of charges passing through a gate oxide layer. CONSTITUTION: A substrate processing apparatus generates an electric field in a processing space between a top electrode and a bottom electrode. The frequency of high frequency power supplied to the bottom electrode is 60 MHz or greater. The substrate processing apparatus processes a substrate mounted on the bottom electrode by using plasma generated by the electric field. The substrate processing apparatus controls the distribution of plasma density by a magnetic field generated by controlling a plurality of electromagnets. The electromagnets are formed on the upper side of a surface which is opposite to the processing space. [Reference numerals] (AA) Ne distribution; (BB) Vdc distribution

Abstract translation: 目的：提供一种基板处理装置，以同时防止电荷积聚在栅电极上并抑制通过栅极氧化物层的电荷量。 构成：基板处理装置在顶部电极和底部电极之间的处理空间中产生电场。 提供给底部电极的高频功率的频率为60MHz或更大。 基板处理装置通过使用由电场产生的等离子体来处理安装在底部电极上的基板。 基板处理装置通过控制多个电磁体产生的磁场来控制等离子体密度的分布。 电磁体形成在与处理空间相对的表面的上侧。 （AA）Ne分布; （BB）Vdc分布

公开(公告)号：KR1020080014671A

公开(公告)日：2008-02-14

申请号：KR1020070080295

申请日：2007-08-09

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠야마쇼이치로 ,  히모리신지 ,  마츠우라아츠시

IPC: H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H01J37/32715

Abstract: A loading table and a plasma processing apparatus having the same are provided to improve the uniformity of electric field strength in a plasma and to enhance an in-plane uniformity of a plasma process to a substrate. A conductive member is connected to a high-frequency power source, and serves as an ion supply electrode. Dielectric layers(32,34) are formed to cover a center portion of an upper surface of the conductive member to make a high-frequency electric field, which is applied to plasma via a substrate, uniform. An electrostatic chuck(33) is laminated on the dielectric layer, and has an electrode film(35) satisfying specific conditions. The dielectric layer is formed in a columnar shape, and a thickness of a circumferential part of the dielectric layer is smaller than a thickness of a central part of the dielectric layer.

Abstract translation: 提供一种装载台和具有该装载台的等离子体处理装置，以提高等离子体中的电场强度的均匀性并提高等离子体处理对基板的面内均匀性。 导电部件与高频电源连接，作为离子供给电极。 形成电介质层（32,34）以覆盖导电构件的上表面的中心部分，以使得经由衬底施加到等离子体的高频电场是均匀的。 静电卡盘（33）层压在电介质层上，具有满足特定条件的电极膜（35）。 电介质层形成为柱状，并且电介质层的周向部分的厚度小于电介质层的中心部分的厚度。