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公开(公告)号：KR100586390B1
公开(公告)日：2006-06-08
申请号：KR1020030097286
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02351 , C23C16/56 , H01J37/317 , H01J2237/004 , H01J2237/3156 , H01L21/02126 , H01L21/02274 , H01L21/02282 , H01L21/2636 , H01L21/312 , H01L21/67069 , H01L21/67253
Abstract: 박막 처리 방법 및 박막 처리 시스템은 복수의 전자빔 관으로부터 피 처리체에 형성된 막으로 전자빔을 조사하여 막두께를 맞추며, 상기 공정에서 상기 복수의 전자빔 관 각각의 출력 또는 조사 시간을 상기 막두께의 분포에 따라 개별적으로 제어한다. 또한, 박막 처리 방법 및 박막 처리 시스템에 의해 피 처리체의 막에 대전된 전하가 제거된다.
Abstract translation: 一种薄膜处理方法和薄膜处理系统中，每个输出或多个电子束管中的曝光时间的通过照射电子束到薄膜matchumyeo膜厚，在膜厚度的分布形成在目标体从多个电子束管的步骤 沿着可独立控制的。 此外，通过薄膜处理方法和薄膜处理系统去除待处理物体的膜上的电荷。
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12.发明授权
公开(公告)号：KR101254987B1
公开(公告)日：2013-04-16
申请号：KR1020117007198
申请日：2009-09-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/318 , H01L21/205
CPC classification number: H01L21/3185 , C23C16/345 , C23C16/45523 , C23C16/511 , H01L21/28273 , H01L21/28282 , H01L29/513 , H01L29/518 , H01L29/792
Abstract: 본 발명은, 복수의 구멍을 갖는 평면 안테나(31)에 의해 처리 용기(1)에 마이크로파를 도입하는 플라즈마 CVD 장치(100)에 있어서, 처리 용기(1) 내의 압력을 10Pa 이상 133.3Pa 이하의 범위 내로 설정하고, 고주파 전원(9)으로부터, 웨이퍼(W)를 올려놓는 재치대(2)의 전극(7)에 웨이퍼(W)의 면적당 0.009W/㎠ 이상 0.64W/㎠ 이하의 범위 내의 출력 밀도로 고주파 전력을 공급하여, 웨이퍼(W)에 RF 바이어스를 인가하면서, 실리콘 함유 화합물 가스와 질소 가스를 포함하는 성막 가스를 이용하여 플라즈마 CVD를 행하는 공정을 구비한 질화 규소막의 성막 방법에 관한 것이다.
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公开(公告)号：KR1020090009283A
公开(公告)日：2009-01-22
申请号：KR1020087029310
申请日：2007-05-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/316 , H01L21/205
CPC classification number: H01L21/28202 , H01L21/3185 , H01L29/518
Abstract: Disclosed is a method for forming an insulating film, which comprises a step for forming a silicon nitride film on a silicon surface by subjecting an object substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, a step for forming a silicon oxynitride film by heating the object substrate provided with the silicon nitride film in an N2O atmosphere, and a step for nitriding the silicon oxynitride film.
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公开(公告)号：KR100874517B1
公开(公告)日：2008-12-16
申请号：KR1020060047912
申请日：2006-05-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01L21/0217 , C23C8/36 , H01J37/32192 , H01L21/02247 , H01L21/02252 , H01L21/3185
Abstract: A plasma processing method for forming a silicon nitride film is provided. A nitrogen-containing plasma is used to nitride silicon on a surface of a target object in a processing chamber of a plasma processing apparatus. The plasma processing method includes a first step of performing a plasma processing under a condition wherein a nitriding reaction is mediated mainly through radical species of the nitrogen-containing plasma, and a second step of performing a plasma processing under a condition wherein the nitriding reaction is mediated mainly through ion species of the nitrogen-containing plasma.
Abstract translation: 提供了一种用于形成氮化硅膜的等离子体处理方法。 使用含氮等离子体在等离子体处理设备的处理室中的目标物体的表面上氮化硅。 等离子体处理方法包括：在主要通过含氮等离子体的自由基种类来介导氮化反应的条件下进行等离子体处理的第一步骤和在氮化反应为氮气的条件下进行等离子体处理的第二步骤 主要通过含氮等离子体的离子种类介导。
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公开(公告)号：KR1020070114789A
公开(公告)日：2007-12-04
申请号：KR1020077022205
申请日：2006-03-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/318 , H01L21/3065 , H01L21/31
CPC classification number: H01L21/28202 , H01J2237/3387 , H01L21/3185 , H01L21/3211 , H01L29/518 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed is a method for nitriding a substrate by having a nitrogen-containing plasma act on silicon in the surface of the substrate in a process chamber of a plasma processing apparatus. In this method, nitridation using the nitrogen-containing plasma is performed while controlling the sheath voltage (Vdc) near the substrate, which is the potential difference (Vp-Vf) between the plasma potential (Vp) in the plasma generating region and the floating potential (Vf) of the substrate, to 3.5 [eV] or less.
Abstract translation: 公开了一种通过在等离子体处理装置的处理室中在衬底的表面中具有含氮等离子体作用在硅上来氮化衬底的方法。 在该方法中，在控制作为等离子体产生区域的等离子体电位（Vp）与浮动电位之间的电位差（Vp-Vf）的基板附近的护套电压（Vdc）的同时进行使用含氮等离子体的氮化， 电位（Vf）为3.5 [eV]以下。
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Patent Agency Ranking
公开(公告)号：KR1020060124591A
公开(公告)日：2006-12-05
申请号：KR1020060047912
申请日：2006-05-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01L21/0217 , C23C8/36 , H01J37/32192 , H01L21/02247 , H01L21/02252 , H01L21/3185
Abstract: A plasma processing method is provided to form a quality nitride layer by directly nitridizing silicon while using plasma. A plasma process is performed in a first step in a condition in which a nitridization reaction caused by a radical component in nitrogen-containing plasma is dominant. A plasma process is performed in a second step in a condition in which a nitridization reaction caused by an ion component in the nitrogen-containing plasma is dominant. Microwave is introduced into a process chamber to generate the nitrogen-containing plasma by using a planar antenna with a plurality of slots.
Abstract translation: 提供等离子体处理方法以通过在使用等离子体的同时直接氮化硅来形成优质的氮化物层。 在由含氮等离子体中的自由基成分引起的氮化反应占优势的状态下，在第一工序中进行等离子体处理。 在由含氮等离子体中的离子成分引起的氮化反应主导的状态下，在第二工序中进行等离子体处理。 通过使用具有多个槽的平面天线将微波引入处理室以产生含氮等离子体。
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公开(公告)号：KR100638913B1
公开(公告)日：2006-10-25
申请号：KR1020030087733
申请日：2003-12-04
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/283
CPC classification number: H01L21/02137 , B05D1/005 , B05D3/068 , H01L21/02203 , H01L21/02282 , H01L21/02351 , H01L21/31058 , H01L21/3124
Abstract: 본 발명의 처리 방법은 기판상에 형성된 유기 재료막의 표면에 보호막용 극성 액체 재료를 도포하거나 보호막용 무기 재료막을 형성하기 위한 방법이다. 이 방법은 불활성 기체 분위기하에 전자 빔 조사 장치에 의해 유기 재료막에 전자 빔을 조사하여 개질 처리를 하는 공정, 및 개질 처리가 수행된 유기 재료막의 표면에 극성 액체 재료를 도포하거나 무기 재료막을 형성하는 공정을 포함한다. 개질 공정에 의해 유기 재료막을 경화시키는 동시에 유기 재료막에 극성 액체 재료 및 무기 재료막과의 친화성을 제공한다.
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公开(公告)号：KR1020040084795A
公开(公告)日：2004-10-06
申请号：KR1020040020177
申请日：2004-03-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/26
CPC classification number: H01L21/31058 , Y10S430/143
Abstract: PURPOSE: An electron beam processing method and apparatus are provided to prevent the degradation of a k-value and chemical-resistance in an SOD(Spin On Dielectric) film by irradiating electron beams on the SOD film through a methane gas. CONSTITUTION: An organic material film is formed on a wafer(W). The organic material film is treated by irradiating electron beams thereon. At this time, the electron beams are irradiated through a hydrocarbon radical generating gas. The hydrocarbon radical generating gas is a low molecular weight hydrocarbon-based gas. The low molecular weight hydrocarbon-based gas is a methane gas. The organic material film is a low-k film.
Abstract translation: 目的：提供一种电子束处理方法和装置，用于通过甲烷气体在SOD膜上照射电子束来防止SOD（旋转介质）膜中的k值和耐化学腐蚀性降低。 构成：在晶片（W）上形成有机材料膜。 通过在其上照射电子束来处理有机材料膜。 此时，通过产生烃基的气体照射电子束。 产生烃基的气体是低分子量烃类气体。 低分子量烃类气体是甲烷气体。 有机材料膜是低k膜。
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公开(公告)号：KR1020040060782A
公开(公告)日：2004-07-06
申请号：KR1020030097286
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02351 , C23C16/56 , H01J37/317 , H01J2237/004 , H01J2237/3156 , H01L21/02126 , H01L21/02274 , H01L21/02282 , H01L21/2636 , H01L21/312 , H01L21/67069 , H01L21/67253
Abstract: PURPOSE: A method and a system for processing thin films are provided to maintain a uniformity of a film thickness and to remove electric charges charged in the film in an operation of using a plasma processing apparatus. CONSTITUTION: A thin film processing system includes a film thickness measuring device and an electron beam processor(40), and a controller(44). The film thickness measuring device measures a thickness of a film formed on an object to be processed. The electron beam processor includes a plurality of electron beam tubes for irradiating electron beams onto the film of the object. The controller individually controls output powers or beam irradiation times of the electron beam tubes based on a measurement result taken by the film thickness measuring device.
Abstract translation: 目的：提供一种用于处理薄膜的方法和系统，以在使用等离子体处理装置的操作中保持膜厚度的均匀性和去除带电荷的膜中的电荷。 构成：薄膜处理系统包括膜厚测量装置和电子束处理器（40）和控制器（44）。 膜厚测量装置测量形成在待处理物体上的膜的厚度。 电子束处理器包括用于将电子束照射到物体的膜上的多个电子束管。 控制器基于由膜厚测量装置获得的测量结果单独地控制电子束管的输出功率或光束照射时间。
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公开(公告)号：KR102006519B1
公开(公告)日：2019-08-01
申请号：KR1020147036571
申请日：2013-04-17
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/223
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