公开(公告)号：KR1020060127599A

公开(公告)日：2006-12-13

申请号：KR1020050048793

申请日：2005-06-08

Applicant: 삼성전자주식회사

Inventor： 정화준 ,  감도영 ,  차상엽 ,  이수호 ,  이상호

IPC: H01L21/205

CPC classification number: C23C16/4412 ,  C23C16/4585 ,  H01L21/67017 ,  H01L21/68785 ,  H01L21/68792

Abstract: A substrate processor is provided to support a substrate and exhaust process gas using a simple structure. A process chamber(10) defines a reaction space(11). A discharge port(12) is formed at a lower portion of the process chamber. A substrate support member includes a positioning portion(31) and a support shaft(32). The positioning portion is positioned inside the process space. The support shaft the discharge port. A housing(40) encloses the support shaft exposed to an outside of the process chamber. A vertical driver drives the support shaft up and down. A rotation driver rotates the support shaft.

Abstract translation: 提供基板处理器以使用简单的结构来支撑基板和排气处理气体。 处理室（10）限定反应空间（11）。 排出口（12）形成在处理室的下部。 基板支撑构件包括定位部分（31）和支撑轴（32）。 定位部分位于处理空间内。 支撑轴排出口。 壳体（40）包围暴露于处理室外部的支撑轴。 垂直驱动器上下驱动支撑轴。 旋转驱动器旋转支撑轴。

公开(公告)号：KR101110635B1

公开(公告)日：2012-02-15

申请号：KR1020050020123

申请日：2005-03-10

Applicant: 삼성전자주식회사

Inventor： 정경석 ,  한규희 ,  정화준 ,  임경춘 ,  김승현

IPC: H01L21/205

Abstract: 본 발명은 웨이퍼의 표면에 증착되는 막의 두께를 균일화할 수 있도록 하는 반도체 제조장치를 개시한다.
개시한 반도체 제조장치는 웨이퍼의 지지를 위해 반응실 내에 회전 가능하게 설치되는 지지부재와, 웨이퍼 상부로 공정가스를 분산 공급하기 위한 가스공급장치를 포함하며, 가스공급장치는 웨이퍼의 회전중심으로부터의 이격거리가 상호 다른 위치에 형성되는 다수의 가스출구들을 갖춘 가스분배판을 포함하는 것이다.

公开(公告)号：KR1020110056712A

公开(公告)日：2011-05-31

申请号：KR1020090113153

申请日：2009-11-23

Applicant: 삼성전자주식회사

Inventor： 박명수 ,  김수홍 ,  정화준 ,  조성근

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: PURPOSE: An electrostatic chuck is provided to prevent damage to a target and the electrostatic chuck by intercepting the generation of plasma discharge around a fluid path. CONSTITUTION: In an electrostatic chuck, an insulating layer(300) is arranged on the top of a support stand(600) and supports a target(100) to be processed. A space(200) for controlling the temperature of the target is formed between the target and the insulating layer. A first insulating member(700) and a second insulating member(800) are inserted inside the support stand. A fluid path for the cooling gas is formed by the first and second insulating members. The fluid path includes a stepped period of the fluid path.

Abstract translation: 目的：提供静电卡盘，以通过拦截流体路径周围的等离子体放电产生来防止目标物和静电卡盘的损坏。 构成：在静电卡盘中，绝缘层（300）布置在支撑架（600）的顶部，并支撑待加工的靶（100）。 在靶和绝缘层之间形成用于控制靶的温度的空间（200）。 第一绝缘构件（700）和第二绝缘构件（800）插入支撑架内。 用于冷却气体的流体路径由第一和第二绝缘构件形成。 流体路径包括流体路径的阶梯期。

公开(公告)号：KR1020090014732A

公开(公告)日：2009-02-11

申请号：KR1020070078905

申请日：2007-08-07

Applicant: 삼성전자주식회사

Inventor： 정화준 ,  이재봉 ,  김정욱 ,  임용호

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32495

Abstract: A plasma etching apparatus is provided to allow a user to exchange or repair only a liner member in which problem is generated by several liner members which are mutually separated to protect the inner wall of the process chamber. The plasma-etching apparatus comprises the chamber body(10), the upper electrode(40), and the bottom electrode(30) and wall liner(50). It has the process chamber in which the process gas is injected the chamber body. A plasma etching apparatus includes a chamber body, an upper electrode, a bottom electrode and wall liner. The chamber body has a process chamber into which the process gas is injected. The upper electrode is installed on the top of the chamber body, and the bottom electrode is installed in the lower part of the chamber body. The wall liner protects the inner wall of the chamber body while being installed inside the chamber body. The wall liner is composed of a plurality of liner members(51) which is capable of being mutually separated.

Abstract translation: 提供了一种等离子体蚀刻装置，以允许使用者仅仅更换或修理其中相互分离以保护处理室的内壁的多个衬套构件产生问题的衬垫构件。 等离子体蚀刻装置包括室主体（10），上电极（40）以及底电极（30）和壁衬（50）。 它具有处理室，其中处理气体注入室体。 等离子体蚀刻装置包括室主体，上电极，底电极和壁衬。 腔体具有处理室，注入工艺气体。 上电极安装在室主体的顶部，底电极安装在腔体的下部。 壁衬套在安装在腔室内部的同时保护腔室主体的内壁。 壁衬由多个可相互分离的衬垫构件（51）组成。

公开(公告)号：KR100716293B1

公开(公告)日：2007-05-09

申请号：KR1020050077690

申请日：2005-08-24

Applicant: 삼성전자주식회사

Inventor： 정화준 ,  신영식 ,  정경석 ,  임경춘 ,  김응수

IPC: G02F1/13

Abstract: 본 발명은 기판반송장치에 관한 것으로서, 기판을 지지하는 플레이트를 갖는 기판지지부; 소정의 기판반송방향으로 연장되어 기판지지부를 이동 가능하도록 지지하는 레일부; 및 레일부를 따라 기판지지부를 이동하여 기판을 반송하는 구동부를 포함한다. 이에 의해 기판의 균일성을 확보하도록 기판을 안정적으로 반송할 수 있다.
기판반송장치, 액정표시장치, 균일성, 기판 처짐, 이동식 기판반송지지

公开(公告)号：KR1020070002218A

公开(公告)日：2007-01-05

申请号：KR1020050057623

申请日：2005-06-30

Applicant: 삼성전자주식회사

Inventor： 유광준 ,  안드레이유스코브 ,  오성태 ,  정경석 ,  정화준

IPC: H01L21/205

CPC classification number: C23C16/45565 ,  C23C16/52

Abstract: A chemical vapor deposition apparatus is provided to uniformly form deposition layers by increasing a flow length of each nozzle hole in a nozzle unit progressively from a center axis line to an outside of a semi-diameter direction of the nozzle hole. A reactor(30) comprises a reactive chamber(31) having a gas inlet hole(33). A reactive gas is supplied to an upper portion of the gas inlet hole. A support(70) supports a target in the reactive chamber. A shower head(40) sprays the reactive gas to the target from the gas inlet hole. The shower head has a nozzle unit(50) where plural nozzle holes(51) are formed. A flow length of a center axis line of the nozzle hole is shorter than an outside of a semi-diameter direction thereof. Outlet ends(55) of the nozzle holes are uniformly separated from the support. Inlet ends(53) of the nozzle holes at the outside of the semi-diameter direction are farther from the support than the center axis line thereof.

Abstract translation: 提供一种化学气相沉积装置以通过将喷嘴单元中的每个喷嘴孔的流动长度逐渐从喷嘴孔的半径方向的中心轴线向外侧逐渐增加来均匀地形成沉积层。 反应器（30）包括具有气体入口孔（33）的反应室（31）。 反应气体被供应到气体入口孔的上部。 支撑件（70）支撑反应室中的目标。 淋浴头（40）从气体入口孔向反应气体喷射反应气体。 淋浴头具有形成有多个喷嘴孔（51）的喷嘴单元（50）。 喷嘴孔的中心轴线的流动长度比其半径方向的外侧短。 喷嘴孔的出口端（55）与支架均匀分离。 在半径方向外侧的喷嘴孔的入口端（53）比支撑体的中心轴线更远。

公开(公告)号：KR100661652B1

公开(公告)日：2006-12-26

申请号：KR1020050072222

申请日：2005-08-08

Applicant: 삼성전자주식회사

Inventor： 이수호 ,  신정근 ,  신영식 ,  박선미 ,  정화준

IPC: H01L21/66

Abstract: A substrate inspecting apparatus and a controlling method thereof are provided to improve a substrate inspecting time and to perform stably a substrate inspecting process. A substrate inspecting apparatus(10) includes an inspecting unit, a supply unit, and an exhaust unit. The inspecting unit(20) is composed of an inspecting portion(21) for inspecting a substrate, an inspecting stage for supporting the substrate, and a driving portion(25) for moving the inspecting portion and the inspecting stage. The supply unit(30) is installed at an inlet region of the inspecting unit. The supply unit is composed of a plurality of supply stages capable of supplying sequentially substrates to the inspecting unit. The exhaust unit(50) is installed at an outlet region of the inspecting unit. The exhaust unit is composed of a plurality of exhaust stages for supporting the substrates.

Abstract translation: 本发明提供一种基板检查装置及其控制方法，以提高基板检查时间并稳定地执行基板检查处理。 基板检查装置（10）包括检查单元，供给单元和排气单元。 检查单元（20）由用于检查基板的检查部分（21），用于支撑基板的检查台以及用于移动检查部分和检查台的驱动部分（25）构成。 供应单元（30）安装在检测单元的入口区域处。 供给单元由多个供给台构成，该多个供给台能够将基板依次供给到检查单元。 排气单元（50）安装在检查单元的出口区域。 排气单元由用于支撑基板的多个排气级构成。