-
公开(公告)号：KR1020140053472A
公开(公告)日：2014-05-08
申请号：KR1020120119405
申请日：2012-10-26
Applicant: 성균관대학교산학협력단
IPC: H05H1/34 , H05H1/46 , H01L21/3065
CPC classification number: H01J37/32568 , H01J37/32165 , H01J37/32174 , H01J37/3244 , H01J37/32541 , H01J37/32715 , H05H1/46 , H05H2001/4645
Abstract: Disclosed is a plasma generator. The plasma generator includes a main body for generating plasma through a pulse signal applied to a multi-electrode; a source power for applying pulse signals having mutually different frequencies to the multi-electrode; and a main control unit for adjusting a clock signal applied to the source power to synchronize the pulse signals applied to the multi-electrode so that the main control unit controls properties of the plasma by controlling the pulse signals to the source power.
Abstract translation: 公开了一种等离子体发生器。 等离子体发生器包括通过施加到多电极的脉冲信号产生等离子体的主体; 用于将具有相互不同频率的脉冲信号施加到所述多电极的源极功率; 以及主控制单元，用于调节施加到源功率的时钟信号，以使施加到多电极的脉冲信号同步，使得主控制单元通过将脉冲信号控制为源功率来控制等离子体的属性。
-
公开(公告)号：KR101380835B1
公开(公告)日：2014-04-04
申请号：KR1020120074309
申请日：2012-07-09
Applicant: 성균관대학교산학협력단
CPC classification number: H01L21/042 , H01L21/0405 , H01L29/1606 , H01L29/66037
Abstract: 그래핀 표면에 반응성 라디칼(reactive radical)을 흡착시키는 것; 및 상기 반응성 라디칼이 흡착된 그래핀에 에너지원을 조사하는 것을 포함하는, 그래핀의 원자층 식각 방법에 관한 것이다.
-
公开(公告)号：KR101347656B1
公开(公告)日：2014-01-07
申请号：KR1020120139406
申请日：2012-12-04
Applicant: 성균관대학교산학협력단
CPC classification number: H01L51/0046 , H01L51/5092
Abstract: The present invention relates to an organic light emitting device including doped fullerene by metal oxide and/or carbonic metal, a manufacturing method thereof, a light emitting device including the same, and a display device including the same.
Abstract translation: 本发明涉及一种包含金属氧化物和/或碳金属的掺杂富勒烯的有机发光器件及其制造方法，包括该有机发光器件的发光器件和包括该发光器件的显示器件。
-
公开(公告)号：KR1020130099450A
公开(公告)日：2013-09-06
申请号：KR1020120020971
申请日：2012-02-29
Applicant: 성균관대학교산학협력단
IPC: G11C11/15 , H01L21/8247 , H01L27/115
CPC classification number: G11C11/161 , H01L21/67069 , G11C11/15 , H01L27/222 , H01L43/08 , H01L43/12
Abstract: PURPOSE: A magnetic random access memory (MRAM) etching method etches an MRAM by combining multiple processes, thereby preventing redeposition. CONSTITUTION: An MRAM is made up of a magnetic tunnel resistance junction layer (20), a pinned layer (30), and a hard mask (40). The combination of etching gas is selected to generate volatile etch byproducts while etching the MRAM. A heating etching process is performed by heating a substrate of the MRAM. An etching process is performed by applying a pulse bias to the MRAM. The etching gas is one out of CO/NH3, CO/NO, CO2/H2, CH4/Ar, CxHy/H2/O2, and CH3OH.
Abstract translation: 目的：磁性随机存取存储器（MRAM）蚀刻方法通过组合多个工艺来蚀刻MRAM，从而防止再沉积。 构成：MRAM由磁隧道电阻结层（20），钉扎层（30）和硬掩模（40）组成。 选择蚀刻气体的组合以在蚀刻MRAM时产生挥发性蚀刻副产物。 通过加热MRAM的基板来进行加热蚀刻工艺。 通过向MRAM施加脉冲偏压来执行蚀刻处理。 蚀刻气体是CO / NH3，CO / NO，CO2 / H2，CH4 / Ar，CxHy / H2 / O2和CH3OH中的一种。
-
公开(公告)号：KR1020130027935A
公开(公告)日：2013-03-18
申请号：KR1020110091469
申请日：2011-09-08
Applicant: 성균관대학교산학협력단
IPC: H05H1/46 , H01L21/205 , H01L21/3065
CPC classification number: H01J37/32128 , H01J37/32091 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H05H1/46 , H05H2001/4675 , H05H2001/4682
Abstract: PURPOSE: A method for controlling a property of pulse plasma by using RF(Radio Frequency) pulse power of a plurality of frequencies is provided to change the pulsing, a period, and a duty ratio of at least applied two RF power, thereby controlling a property of pulse plasma. CONSTITUTION: A plasma generator including a gas inlet, a source electrode unit, and a bias electrode unit is provided. At least two RF power is applied to the source electrode unit. At least one RF power, which is not pulsed, is applied to the bias electrode unit. Pulse plasma is formed by using reactive gas which is injected to the gas inlet.
Abstract translation: 目的：提供通过使用多个频率的RF（射频）脉冲功率来控制脉冲等离子体的性质的方法，以改变至少应用两个RF功率的脉冲，周期和占空比，从而控制 脉冲等离子体的性质。 构成：提供包括气体入口，源电极单元和偏置电极单元的等离子体发生器。 至少两个RF功率被施加到源电极单元。 将至少一个不是脉冲的RF功率施加到偏置电极单元。 通过使用注入气体入口的反应性气体形成脉冲等离子体。
-
Patent Agency Ranking
公开(公告)号：KR1020130011593A
公开(公告)日：2013-01-30
申请号：KR1020110072851
申请日：2011-07-22
Applicant: 성균관대학교산학협력단
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/1606 , H01L29/45
Abstract: PURPOSE: A field effect transistor and a manufacturing method thereof are provided to reduce the constant resistance of a field effect transistor by forming an electrode and a channel with a graphene layer. CONSTITUTION: A source and a drain electrodes(20,30) are respectively formed on a substrate. A channel layer(40) is electrically connected to the source and the drain electrode. The source, the drain electrode and the channel layer include a graphene layer. The graphene layer is formed on a metallic catalyst thin film by a CVD(Chemical Vapor Deposition) method.
Abstract translation: 目的：提供场效应晶体管及其制造方法，以通过形成具有石墨烯层的电极和沟道来减小场效应晶体管的恒定电阻。 构成：在衬底上分别形成源极和漏极（20,30）。 沟道层（40）电连接到源极和漏极。 源极，漏极和沟道层包括石墨烯层。 通过CVD（化学气相沉积）法在金属催化剂薄膜上形成石墨烯层。
-
公开(公告)号：KR101184859B1
公开(公告)日：2012-09-20
申请号：KR1020110028029
申请日：2011-03-29
Applicant: 성균관대학교산학협력단
CPC classification number: H05H1/46 , H01J37/32091 , H01J37/321 , H01J37/32568 , H01J37/32825 , H05H2001/4652 , H05H2001/4675
Abstract: PURPOSE: A hybrid plasma source and a plasma generating apparatus using the same are provided to perform low pressure processing by forming an inductively coupled inner plasma source surrounding a capacitively coupled internal plasma source. CONSTITUTION: RF power is respectively connected to a first electrode(120), a second electrode(140), and one or more unit coils(220). An electric field is induced by applying the RF power to a first electrode and a second electrode. Reaction gas is inserted through a gas inlet installed at a lateral exterior wall(160) of a plasma generating device. The reaction gas is changed into a plasma state by the electric field induced inside a second space. Unit coils receiving power from the RF power generates the electric field. The electric field is left out in the second space. The induced electric field turns gas into plasma by generating discharge in the reaction gas inserted through the gas inlet.
Abstract translation: 目的：提供一种混合等离子体源和使用其的等离子体产生装置，以通过形成围绕电容耦合的内部等离子体源的电感耦合内部等离子体源来执行低压处理。 构成：RF功率分别连接到第一电极（120），第二电极（140）和一个或多个单元线圈（220）。 通过将RF功率施加到第一电极和第二电极来感应电场。 反应气体通过安装在等离子体产生装置的侧外壁（160）处的气体入口插入。 反应气体通过在第二空间内诱发的电场而变为等离子体状态。 从RF功率接收功率的单元线圈产生电场。 电场被留在第二个空间。 感应电场通过在气体入口插入的反应气体中产生放电而将气体变成等离子体。
-
公开(公告)号：KR1020110098355A
公开(公告)日：2011-09-01
申请号：KR1020100017932
申请日：2010-02-26
Applicant: 성균관대학교산학협력단
IPC: H01L21/3065
CPC classification number: H01L21/31116 , H01L21/67069
Abstract: 본 발명은 BCl
3 가스 및 첨가 가스를 사용하여 고유전 물질의 원자층 식각을 수행하는 중성빔 식각 장치를 이용한 식각 방법에 관한 것으로, 본 발명의 중성빔 식각 장치를 이용한 식각 방법은 피식각층이 노출된 피식각 기판을 반응 챔버 내의 스테이지 상에 안착시키는 단계; 상기 반응 챔버 내부의 샤워링을 통하여 상기 반응 챔버 내부로 BCl
3 로 이루어지는 식각 가스를 공급하여 고유전 물질로 이루어지는 피식각층에 흡착시키는 단계; 상기 반응 챔버 일측에 설치된 퍼지 가스 공급관을 통하여 퍼지 가스를 공급하고, 상기 흡착되고 남은 과잉의 식각 가스를 퍼지하는 단계; 상기 식각 가스가 흡착된 피식각층 상으로 중성빔을 조사하는 단계; 및 퍼지 가스를 공급하여 상기 중성빔 조사에 의하여 발생된 식각 부산물을 제거하는 단계를 포함한다.-
公开(公告)号：KR101021480B1
公开(公告)日：2011-03-16
申请号：KR1020070126968
申请日：2007-12-07
Applicant: 성균관대학교산학협력단
Abstract: 본 발명은 페라이트 구조체를 구비하는 플라즈마 소스 및 이를 채택하는 플라즈마 발생장치에 관한 것으로, 반응챔버의 내측 상부에 형성된 제1 안테나 및 제2 안테나의 일측을 연결한 루프형 선형안테나로부터 방사형으로 형성된 필드(field)를 상기 반응챔버 내부에 안착된 처리기판 방향으로 집중시키는 페라이트 구조체를 포함하는 구성을 마련한다.
상기와 같은 페라이트 구조체를 구비하는 플라즈마 소스 및 이를 채택하는 플라즈마 발생장치를 이용하는 것에 의해, 방사형으로 형성되는 필드(field)를 처리기판으로 집중시켜 전력손실을 줄이고, 반응챔버 내부에서 플라즈마의 밀도 및 균일도를 향상시켜 반도체 제조공정의 효율성 및 수율을 높일 수 있다.
선형안테나, 플라즈마, 페라이트, 유도코일-
公开(公告)号：KR1020080111964A
公开(公告)日：2008-12-24
申请号：KR1020070060575
申请日：2007-06-20
Applicant: 삼성디스플레이 주식회사 , 성균관대학교산학협력단
IPC: H05B33/10
CPC classification number: C23C16/509 , C23C16/029 , C23C16/30 , C23C16/401 , C23C28/00 , H01J37/32091 , H01L51/5256
Abstract: An apparatus for depositing thin film capable of preventing delamination of protective film and method thereof are provided to reduce moisture permeability by improving light transmission. An apparatus(100) for depositing thin film forms a protective film having a structure in which an inorganic film and an organic film are laminated by turns on a substrate(10), and comprises a reaction chamber(110), a radio frequency electrode(120), a supporting substrate(130), a power supply unit, a first reaction gas supply unit(151), a second reaction gas supply unit(152), and an inert gas supply unit(153). The radio frequency electrode is installed inside the reaction chamber, and receives a radio frequency power. The supporting substrate is installed inside the reaction chamber, supports the substrate, and receives a bias voltage. The power supply unit supplies a radio frequency voltage and the bias voltage to the radio frequency electrode and the substrate. The first reaction gas supply unit supplies a first reaction gas inside the reaction chamber while forming the inorganic film on the substrate. The second reaction gas supply unit supplies a second reaction gas inside the reaction chamber while forming the inorganic film and the organic film on the substrate. The inert gas supply unit supplies an inert gas inside the reaction chamber while forming the inorganic film and the organic film on the substrate.
Abstract translation: 提供一种用于沉积能够防止保护膜分层的薄膜的设备及其方法，以通过改善透光性来降低透湿性。 一种用于沉积薄膜的设备（100）形成了一种保护膜，该保护膜具有将基底（10）上的无机膜和有机膜层叠的结构，并且包括反应室（110），射频电极 120），支撑基板（130），电源单元，第一反应气体供应单元（151），第二反应气体供应单元（152）和惰性气体供应单元（153）。 射频电极安装在反应室内，并接收射频电力。 支撑基板安装在反应室内，支撑基板，并接收偏置电压。 电源单元向射频电极和基板提供射频电压和偏置电压。 第一反应气体供给单元在反应室内供给第一反应气体，同时在基板上形成无机膜。 第二反应气体供给单元在反应室内供给第二反应气体，同时在基板上形成无机膜和有机膜。 惰性气体供给单元在反应室内供给惰性气体，同时在基板上形成无机膜和有机膜。
-
-
-
-
-
-
-
-
-
Search Results
123
records
(took 0.029 seconds)
