公开(公告)号：KR1020030079325A

公开(公告)日：2003-10-10

申请号：KR1020020018286

申请日：2002-04-03

Applicant: 한국과학기술연구원

Inventor： 조병원 ,  이희우 ,  조원일 ,  김현중 ,  양천모 ,  김용태

IPC: H01G11/56

CPC classification number: H01G9/038 ,  H01G11/56 ,  Y02E60/13 ,  Y02T10/7022

Abstract: PURPOSE: An electric double layer capacitor is provided to increase a capacitance and reduce a self discharge and internal resistance of a battery. CONSTITUTION: An electric double layer capacitor comprises two or more electrodes; and an ultraviolet hardening gel type polyelectrolyte interposed between the electrodes, and which is constituted by a polymer, organic solvent or liquid electrolyte, and an initiator and hardening accelerator. The polymer is constituted by a function-I polymer containing one of a polyethylene glycol diacrylate(PEDGA) and polyethylene glycol dimethacrylate(PEGDMA) or a mixture thereof; and a function-II polymer containing one of a poly vinylidene fluoride(PVdF) based polymer, poly acrylonitrile(PAN) based polymer, poly methyl methacrylate(PMMA) based polymer and a poly vinyl chloride(PVC) based polymer or a mixture thereof.

Abstract translation: 目的：提供双电层电容器来增加电容，并减少电池的自放电和内阻。 构成：双电层电容器包括两个或更多个电极; 以及介于电极之间的由聚合物，有机溶剂或液体电解质以及引发剂和硬化促进剂构成的紫外线固化凝胶型聚电解质。 该聚合物由含有聚乙二醇二丙烯酸酯（PEDGA）和聚乙二醇二甲基丙烯酸酯（PEGDMA）或其混合物之一的官能聚合物构成; 和聚偏二氟乙烯（PVdF）系聚合物，聚丙烯腈（PAN）系聚合物，聚甲基丙烯酸甲酯（PMMA）系聚合物，聚氯乙烯（PVC）系聚合物）或其混合物中的任一种的功能II聚合物。

公开(公告)号：KR1020030045547A

公开(公告)日：2003-06-11

申请号：KR1020010076301

申请日：2001-12-04

Applicant: 한국과학기술연구원

Inventor： 김용태 ,  김성일 ,  김춘근

IPC: G11C11/22

CPC classification number: G11C11/2273 ,  G11C11/2275 ,  G11C11/2297

Abstract: PURPOSE: A write signal error protection circuit of a non destructive readout ferroelectric random access memory and a method for preventing the same are provided to effectively remove the write errors caused by a bitline charged by the write operation before the write operation by using the change of the address signal. CONSTITUTION: A write signal error protection circuit of a non destructive readout ferroelectric random access memory(NDRO-FRAM) includes a switch(30) for outputting a plurality of voltages by receiving an address signal, wherein each of the voltages has a different value each other, and a discharging nMOSFET(31) for discharging the electrical charges in the write bit line in response to the voltage.

Abstract translation: 目的：提供非破坏性读出铁电随机存取存储器的写入信号错误保护电路及其防止方法，以有效地消除写入操作之前由写入操作所充电的位线引起的写入错误， 地址信号。 构成：非破坏性读出铁电随机存取存储器（NDRO-FRAM）的写信号误差保护电路包括用于通过接收地址信号输出多个电压的开关（30），其中每个电压具有不同的值 另一个以及用于响应于该电压而在写入位线中放电电荷的放电nMOSFET（31）。

公开(公告)号：KR1020030005255A

公开(公告)日：2003-01-17

申请号：KR1020027013107

申请日：2001-01-31

Applicant: 한국과학기술연구원

Inventor： 윤경석 ,  조병원 ,  조원일 ,  김형선 ,  김운석 ,  이희우 ,  김용태

IPC: H01M10/05

CPC classification number: H01M10/0565 ,  H01M2/1653 ,  H01M2/1686 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/056 ,  H01M2300/0094

Abstract: PURPOSE: A UV curing multi-layered polymer electrolyte and a lithium secondary battery containing the electrolyte are provided, to improve the adhesive strength, the mechanical properties, the low and high temperature characteristics, the high rate discharge capacity, the lifetime, the capacity and the stability of a battery. CONSTITUTION: The electrolyte comprises a separation membrane layer, a UV curing polymer layer and an organic electrolyte solution which is prepared by dissolving a lithium salt into an organic solvent. The separation membrane layer is made of a polymer electrolyte, polypropylene, polyethylene polyvinylidene fluoride or non-woven; the UV curing polymer layer comprises the polymer obtained by UV curing the ethylene glycol di(meth)acrylate oligomer represented by the formula CH2=CR1COO(CH2CH2O)nCOCR2=CH2(wherein R1 and R2 are independent each other and are H or methyl group and n is an integer of 3-20), and the polymer selected from the group consisting of a polyvinylidene fluoride-based polymer, a polyacrylonitrile-based polymer, a poly(methyl methacrylate)-based polymer, a poly(vinyl chloride)-based polymer and their mixtures. Preferably the lithium salt is selected from the group consisting of LiPF6, LiClO4, LiAsF6, LiBF4, LiCF3SO3, Li(CF3SO2)2N and their mixtures; and the organic solvent is selected from the group consisting of ethylene carbonate, propylene carbonate, diethyl carbonate, dimethyl carbonate, ethylmethyl carbonate and their mixtures.

Abstract translation: 目的：提供紫外线固化多层聚合物电解质和含有电解质的锂二次电池，以提高粘合强度，机械性能，低温和高温特性，高放电容量，使用寿命，容量和 电池的稳定性。 构成：电解质包括通过将锂盐溶解在有机溶剂中制备的分离膜层，UV固化聚合物层和有机电解质溶液。 分离膜层由聚合物电解质，聚丙烯，聚偏二氟乙烯或无纺布制成。 UV固化聚合物层包含通过紫外线固化由式CH 2 = CR 1 COO（CH 2 CH 2 O）n COCR 2 = CH 2表示的乙二醇二（甲基）丙烯酸酯低聚物获得的聚合物（其中R 1和R 2彼此独立且为H或甲基， n为3-20的整数），选自聚偏二氟乙烯系聚合物，聚丙烯腈系聚合物，聚甲基丙烯酸甲酯系聚合物，聚（氯乙烯）系聚合物 聚合物及其混合物。 优选锂盐选自LiPF 6，LiClO 4，LiAsF 6，LiBF 4，LiCF 3 SO 3，Li（CF 3 SO 2）2 N及其混合物; 有机溶剂选自碳酸亚乙酯，碳酸亚丙酯，碳酸二乙酯，碳酸二甲酯，碳酸甲乙酯及其混合物。

公开(公告)号：KR100363393B1

公开(公告)日：2002-11-30

申请号：KR1020000036003

申请日：2000-06-28

Applicant: 한국과학기술연구원

Inventor： 김용태 ,  박영균 ,  김성일 ,  김익수

IPC: H01L27/115

Abstract: 본 발명은 비파괴판독형 불휘발성 기억소자의 메모리 셀 소자 및 그 제조 방법에 관한 것으로서, YMnO
3 등 유전상수가 20 내지 30인 강유전체 재료를 사용하여 금속/ 강유전체/반도체 구조에서의 강유전체 박막을 형성한 게이트를 갖는 트랜지스터를 제조하는 방법을 제공하고 이 트랜지스터를 비파괴 판독형 불휘발성 기억소자의 메모리 셀소자로 사용함에 의해, 동작전압의 상승, 전하주입(charge injection)현상, 문턱전압 변경, 누설전류증가, 메모리셀 이상동작, 강유전체의 포화분극지연등 종래 강유전체를 사용하는 경우에 발생되었던 문제점을 해소할 수 있도록 한 것이다.

公开(公告)号：KR1020020011230A

公开(公告)日：2002-02-08

申请号：KR1020000044606

申请日：2000-08-01

Applicant: 한국과학기술연구원

Inventor： 김용태 ,  김춘근 ,  김성일 ,  심선일

IPC: G11C16/00

CPC classification number: G11C11/22

Abstract: PURPOSE: A drive circuit of an NDRO-FRAM(nondestructive readout ferroelectric RAM) is provided to be capable of enabling read and write operations on a NDRO-FRAM. CONSTITUTION: A plurality of NDRO-FRAM cells(2aa-2an..2ma,2mn) comprise a drain, a bulk, a source and a gate and are arranged in rows and columns. Read word lines(30aa-30ma) are connected to drains of the NDRO-FRAM cells. Write word lines(30ab-30mb) are connected to bulks of the NDRO-FRAM cells. Read bit lines(31a-31n) are connected to the sources of the NDRO-FRAM cells. Write bit lines are connected to the gates of the NDRO-FRAM cells. Word line decoders(30a-30m) are connected to the read bit lines(31a-31n) or the write bit lines to generate read or write word signals. Data level transmission circuits(32a-32n) are connected to the read bit lines(31a-31n) to transmit the data levels of the NDRO-FRAM cells. A sense amp(33) is connected to the data level transmission circuits(32a-32n) to sense the data levels of the NDRO-FRAM cells. A write driver(34) is connected to the write bit lines to write bit signals.

Abstract translation: 目的：提供NDRO-FRAM（非破坏性读出铁电RAM）的驱动电路，以便能够对NDRO-FRAM进行读写操作。 构成：多个NDRO-FRAM单元（2aa-2an ... 2ma，2mn）包括漏极，体积，源极和栅极，并且以行和列排列。 读取字线（30aa-30ma）连接到NDRO-FRAM单元的下水道。 写字线（30ab-30mb）连接到NDRO-FRAM单元的批量。 读取位线（31a-31n）连接到NDRO-FRAM单元的源。 写位线连接到NDRO-FRAM单元的门。 字线解码器（30a-30m）连接到读位线（31a-31n）或写位线，以产生读或写字信号。 数据电平传输电路（32a-32n）连接到读位线（31a-31n）以传送NDRO-FRAM单元的数据电平。 感测放大器（33）连接到数据电平传输电路（32a-32n）以感测NDRO-FRAM单元的数据电平。 写入驱动器（34）连接到写入位线以写入位信号。

公开(公告)号：KR100255130B1

公开(公告)日：2000-05-01

申请号：KR1019970057885

申请日：1997-11-04

Applicant: 한국과학기술연구원

Inventor： 김용태 ,  김동준

IPC: H01L21/318

Abstract: PURPOSE: A method for manufacturing WBxNy anti-diffusion film is provided to prevent diffusion of a semiconductor and a main wire metal even when a subsequent thermal process is performed at high temperature over a given temperature range and to prevent degradation of an electrical characteristic and defects. CONSTITUTION: A method for manufacturing WBxNy anti-diffusion film employs a low pressure chemical deposition method or a plasma chemical deposition method. In the low pressure chemical deposition method, with the flow rate of WF5 of 2-10 sccm and the flow rate of H2 of 50-300 sccm. the raw gas is inserted into a vacuum reactor by changing the flow ratio of B10H14/NH13 in the range of 2-5 and the temperature of a substrate is heated at the temperature of 40-300 Celsius at the pressure of below 1-10-1 Torr.

Abstract translation: 目的：提供一种制造WBxNy防扩散膜的方法，以防止半导体和主金属丝金属的扩散，即使在高温下在一定温度范围内进行后续热处理并防止电特性和缺陷的劣化 。 构成：制造WBxNy防扩散膜的方法采用低压化学沉积法或等离子体化学沉积法。 在低压化学沉积法中，WF5流量为2-10sccm，H2流量为50-300sccm。 通过将B10H14 / NH13的流量比改变为2-5，将原料气体插入真空反应器中，并将基板的温度在40-300℃的温度下加压至低于1-10℃， 1乇

公开(公告)号：KR100250954B1

公开(公告)日：2000-04-15

申请号：KR1019970057884

申请日：1997-11-04

Applicant: 한국과학기술연구원

Inventor： 김용태 ,  김동준

IPC: H01L21/28

Abstract: PURPOSE: A method for forming a diffusion barrier of tantalum silicon nitride(TaSiNx), a contact junction and a multi-level interconnection using the barrier, and related methods are provided to keep excellent electric characteristics after high-temperature heat treatment as well. CONSTITUTION: The TaSiNx diffusion barrier is deposited by sputtering, which uses a tantalum silicide(Ta5Si3) target with a nitrogen gas flow varying from 0 to 10 percent with respect to an entire gas flow including argon gas. Thus, the concentration of nitrogen in the diffusion barrier is controlled between 0 and 43 atomic percent. The TaSiNx diffusion barrier is deposited with a thickness of 500Å to 2000Å, and used for contact with silicon, gallium arsenic, gallium nitride, or indium phosphorus. In addition, the TaSiNx diffusion barrier(7) with 28 nitrogen atomic percent or below is used for the contact junction with a source(2) and a drain(3) to a temperature of 700°C. Furthermore, the TaSiNx diffusion barrier(7) with 40 nitrogen atomic percent or more is used for the multi-level interconnection including an interlayer dielectric layer(9) and a metallization layer(8) to a temperature of 900°C.

Abstract translation: 目的：提供一种用于形成钽硅氮化物（TaSiNx）的扩散阻挡层的方法，使用该阻挡层的接触点和多层互连以及相关方法，以在高温热处理之后保持优异的电特性。 构成：通过溅射沉积TaSiNx扩散势垒，其使用氮化钽（Ta 5 Si 3）靶，相对于包括氩气的整个气流，氮气流量为0至10％变化。 因此，扩散阻挡层中的氮浓度控制在0〜43原子％之间。 TaSiNx扩散阻挡层以500〜2000的厚度沉积，用于与硅，砷化镓，氮化镓或铟磷的接触。 此外，具有28个氮原子百分比或更低的TaSiNx扩散势垒（7）用于与源（2）和漏极（3）的接触连接至700℃的温度。 此外，具有40个氮原子百分比或更大的TaSiNx扩散势垒（7）用于包括层间电介质层（9）和金属化层（8）至900℃的多层互连。

公开(公告)号：KR1019990038231A

公开(公告)日：1999-06-05

申请号：KR1019970057885

申请日：1997-11-04

Applicant: 한국과학기술연구원

Inventor： 김용태 ,  김동준

IPC: H01L21/318

Abstract: 본 발명은 기억소자 및 비기억소자의 다층구조 금속 연결배선에 관한 것으로, 특히, 그에 사용되는 새로운 구조의 소자 및 그 제조방법에 관한 것이다. 소자 제조시 실리콘(Si) 및 화합물반도체(GaAs, GaN, InP)와 저항성접합공정 및 개별소자간의 상호연결을 위한 다층구조 금속배선 공정에서 반도체/금속, 금속/금속, 층간절연층/금속 사이에 상호확산을 막을 수 있는 확산방지막으로서, 본 발명에서 제안된 삼원소계 확산방지막인 텅스텐보론나이트라이드 (WB
x N
y )를 사용하므로써, 종래의 이원소계 확산방지막이 열처리온도 500∼700℃에서 확산방지 기능이 상실되어서 높은 밀도의 결함 및 전기적특성의 열화를 막을 수 없느데 반하여, 850℃이상의 고온에서 후속열처리하여도 반도체 및 구리금속의 확산을 방지하였으며, 전기적 특성의 열화 및 결함이 전혀 발생하지 않는다. 따라서 본 발명은 기억소자 및 비기억소자의 제조 방법에서 새로운 다층금속배선 구조중의 확산방지막으로 텅스텐보론나이트라이드를 사용하므로써, 기존의 확산방지막을 사용한 경우보다 월등히 우수한 전기적특성을 가지는 다층금속배선을 제공한다.

公开(公告)号：KR100130631B1

公开(公告)日：1998-04-06

申请号：KR1019930027657

申请日：1993-12-14

Applicant: 한국과학기술연구원

Inventor： 김용태 ,  이창우

IPC: H01L27/02

Abstract: A fabrication method of ferroelectric capacitors is provided to improve the performance of capacitor by changing material of a substrate electrode. The method comprises the steps of: forming a substrate electrode composed of WN/W, W/Pt, WN/Pt. or WN/W/Pt; and forming a ferroelectric film by depositing BaTiO3 or PbTiO3 contained of Zr, Ln, Mg, Nb, BaTiO3 or PbTiO3 compound using sputtering or chemical vapor deposition at 600-700deg.C for 1-2 hours. Thereby, it is possible to improve the electric and physical characteristics of ferroelectric capacitor using the electrode made of WN/W, W/Pt, WN/Pt. or WN/W/Pt.

Abstract translation: 提供强电介质电容器的制造方法，通过改变衬底电极的材料来改善电容器的性能。 该方法包括以下步骤：形成由WN / W，W / Pt，WN / Pt组成的基板电极。 或WN / W / Pt; 并通过溅射或化学气相沉积在600-700℃下沉积Zr，Ln，Mg，Nb，BaTiO3或PbTiO3化合物中的BaTiO3或PbTiO3形成铁电薄膜1-2小时。 由此，可以使用由WN / W，W / Pt，WN / Pt构成的电极来提高强电介质电容器的电气和物理特性。 或WN / W / Pt。

公开(公告)号：KR1019970072313A

公开(公告)日：1997-11-07

申请号：KR1019960010174

申请日：1996-04-04

Applicant: 한국과학기술연구원

Inventor： 민석기 ,  김용태 ,  권철순

IPC: H01L21/768

Abstract: 본 발명은 반도체 금속박막의 배선방법에 관한 것으로, 저압 화학 기상 증착법 또는 플라즈마 화학 기상중착법에 의해 질화 텅스텐 박막을 확산방지막으로 하여 구리로 중착시키도록 한 것이다.
이러한 금속배선방법은 먼저 기판(3)상에 플라즈마 화학증착법으로 질화 텅스텐 확산 방지막(7)을 도포하고, 금속층(1) (6)인 Cu를 중착시키며, 접촉상으로서의 비아콘택 영역(5)과 금속층(1)을 연결시킬 때는 역시 플리즈마 화학중착법으로 중착된 질화 텅스텐 박막을 확산방지막으로 사용하여 금속배선하도록 한 것으로, 확산방지막인 질화 텅스텐 박막은 실리콘 기판(3)과 금속층(1)이 접촉되는 콘택 영역(2), 금속층(1) (6)과 절연막 (4)사이, 금속층(1) (6)이 접촉되는 비아콘택 영역(5)에 적용되는 것이다. 이와 같이 Cu 확산방지를 위한 확산방지막으로 텅스텐 질화박막이 우수한 특성을 지님을 알 수 있다.