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公开(公告)号：KR100271138B1
公开(公告)日：2001-03-02
申请号：KR1019980001800
申请日：1998-01-22
Applicant: 한국과학기술원
IPC: B41J2/01
CPC classification number: B41J2/1626 , B41J2/1603 , B41J2/1631 , B41J2/1632 , B41J2/1639 , B41J2/1643
Abstract: PURPOSE: An inkjet printer head and method for manufacturing the same is provided to achieve improved productivity and reduce manufacturing cost by arranging a plurality of inkjet nozzles through a single metal plating process. CONSTITUTION: A method comprises a first step of preparing a substrate(201) having an embedded resistor(206) for heating an ink and a bottom metal layer(310) deposited onto the substrate; a second step of spin coating or film coating the photoresistor or polyimide onto the bottom metal layer through a photolithography process, and forming first and second photoresist molds; a third step of forming a preliminary metal barrier layer formed of a Ni-plating layer onto the bottom metal layer, such that the preliminary metal barrier layer has a height corresponding to the height of first and second photoresist molds, and forming a main metal barrier layer(508) in such a manner that the top of the first photoresist mold is completely covered by the Ni-plating layer and the top of the second photoresist mold is not completely covered by the overplating Ni-plating layer, so as to form an inkjet nozzle(207) having a predetermined size and shape; a fourth step of partially etching the first photoresist mold, second photoresist mold and the bottom metal layer, so as to form an ink flow channel(203) within the main metal barrier layer; and a fifth step of partially etching the substrate so as to form a main ink supply path(202) communicated to the ink flow channel.
Abstract translation: 目的：提供一种喷墨打印机头及其制造方法，以通过单个金属电镀工艺布置多个喷墨喷嘴来实现提高的生产率并降低制造成本。 构成：一种方法包括：制备具有用于加热油墨的嵌入式电阻器（206）和沉积在基板上的底部金属层（310）的基板（201）的第一步骤; 通过光刻工艺旋转涂布或将光敏电阻或聚酰亚胺膜涂覆到底部金属层上的第二步骤，以及形成第一和第二光致抗蚀剂模具; 在所述底部金属层上形成由Ni镀层形成的预备金属阻挡层的第三工序，使得所述预备金属阻挡层的高度对应于所述第一和第二光致抗蚀剂模具的高度，并且形成主金属屏障 层（508），使得第一光致抗蚀剂模具的顶部完全被镀镍层覆盖，并且第二光致抗蚀剂模具的顶部未被覆盖的镀镍层完全覆盖，以形成 具有预定尺寸和形状的喷墨喷嘴（207）; 第四步骤，部分地蚀刻第一光致抗蚀剂模具，第二光致抗蚀剂模具和底部金属层，以便在主金属阻挡层内形成墨流动通道（203）; 以及第五步骤，部分地蚀刻所述基板，以形成连通到所述墨流动通道的主墨供给路径（202）。
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公开(公告)号：KR1020000011585A
公开(公告)日：2000-02-25
申请号：KR1019990027603
申请日：1999-07-08
Applicant: 한국과학기술원
IPC: H01L27/06
CPC classification number: H01L23/645 , H01L23/522 , H01L23/5227 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A semiconductor device of which area occupied on a substrate is small and of which passive electric device having little serial resistance and large current limit is integrated with a monolithic method is provided. CONSTITUTION: The inductor(1) is composed of three parts which are formed by a single metal plating at the same time; a signal pillar(102) functioned as a path electrically connected with an integrated circuit(100) of a substrate(101); a supporting bar(103) supporting a spiral inductor(104) with a specific number to promote the mechanical stability while manufacturing and using; and the spiral inductor(104) minimizing the electromagnetic influence which can affect the integrated circuit(100) of the lower area and minimizing the signal loss to the substrate(101).
Abstract translation: 目的：提供一种半导体器件，其基板占据的面积小，并且具有小的串联电阻和大电流限制的无源电子器件与单片方法集成。 构成：电感器（1）由同时由单个金属镀层形成的三部分组成， 信号柱（102）用作与衬底（101）的集成电路（100）电连接的路径; 支撑杆（103），其支撑具有特定数量的螺旋电感器（104），以在制造和使用时促进机械稳定性; 和螺旋电感器（104）使得能够影响下部区域的集成电路（100）的电磁影响最小化，并使对衬底（101）的信号损失最小化。
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公开(公告)号：KR1019920003320B1
公开(公告)日：1992-04-27
申请号：KR1019880002303
申请日：1988-03-05
Applicant: 한국과학기술원
IPC: H01L29/78
CPC classification number: H01L29/66719 , H01L29/66712
Abstract: The method for forming a very small n+ type source region by using an oxide film of phosphor silicate glass (PSG) material to prevent the generation of latch-back, comprises the steps of growing an N- epitaxial layer (31) onto an N+ silicon substrate (30) to form a thin gate oxide film layer at a device area to form a gate (34) thereon, injecting Boron ions into the N- epitaxial layer (31) to form a P- body region (32) by heat-treating, forming an N+ region (38), and parallel- connecting the N+ region (38) to the P- body region (32) by using a platinum silicide (39) to form a source (40).
Abstract translation: 通过使用磷灰石玻璃（PSG）材料的氧化物膜来形成非常小的n +型源极区域以防止产生闭锁回路的方法包括以下步骤：将N外延层（31）生长到N + 衬底（30）以在器件区域上形成薄的栅极氧化物膜层，以在其上形成栅极（34），将硼离子注入到N-外延层（31）中，以通过热处理形成P-体区域（32） 处理形成N +区域（38），并且通过使用硅化铂（39）将N +区域（38）并联连接到P-体区域（32）以形成源极（40）。
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Patent Agency Ranking
公开(公告)号：KR102027545B1
公开(公告)日：2019-10-01
申请号：KR1020170154949
申请日：2017-11-20
Applicant: 한국과학기술원
IPC: H01L27/08 , H01L29/868 , H01L27/102
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公开(公告)号：KR100368930B1
公开(公告)日：2003-01-24
申请号：KR1020010016404
申请日：2001-03-29
Applicant: 한국과학기술원
IPC: H01L29/00
CPC classification number: H01L27/08 , H01L23/5227 , H01L23/66 , H01L2223/6622 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H05K3/4092 , H01L2924/00
Abstract: Disclosed are a three dimensional metal device floated over a semiconductor substrate, a circuit thereof, and a manufacturing method thereof. A passive electric device for wireless communications and optical communications, such as a spiral inductor, a solenoid inductor, a spiral transformer, a solenoid transformer, a micro mirror, a transmission line is floated over and apart by a few ten micrometers from the semiconductor substrate. These three dimensional metal devices remarkably decrease a signal loss to the substrate, to thereby enhance the device performance, to allow a modeling of a device separated from the substrate, and to make it possible to form an integrated circuit below the device. Further, the three dimensional metal device is manufactured in a monolithic method on the integrated circuit such that it does not affect on the integrated circuit formed therebelow.
Abstract translation: 公开了浮在半导体衬底上的三维金属器件，其电路及其制造方法。 用于诸如螺旋电感器，螺线管电感器，螺旋变压器，螺线管变压器，微镜，传输线的无线通信和光通信的无源电力设备从半导体衬底浮起并隔开几十微米 。 这些三维金属器件显着减小了到衬底的信号损耗，从而增强了器件性能，允许对与衬底分离的器件进行建模，并且使得有可能在器件下方形成集成电路。 此外，三维金属器件在集成电路上以单片方式制造，使得它不影响在其下形成的集成电路。
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公开(公告)号：KR1020000019683A
公开(公告)日：2000-04-15
申请号：KR1019980037894
申请日：1998-09-15
Applicant: 한국과학기술원
IPC: H01F41/00
Abstract: PURPOSE: A solenoid inductor including an air core and a magnetic core is provided to have no limit for length and to be manufactured simply. CONSTITUTION: A method for an air solenoid inductor comprises following steps: a board having conductive lines on its upper surface is prepared(S1 Step); a three dimensional bridge mold is formed on the board by MESD (Multi-Exposure and Single Development) process(S2 Step); an iron bridge is formed on both the three dimensional bridge mold and the board(S3 Step). The method for solenoid inductor having magnetic core consists of: a board having conductive lines on its upper surface is prepared(S1 Step); a sacrificial layer is formed on the board(S2 Step); the board has magnetic core(S3 Step); the three dimensional bridge mold is formed on the board by SD(Single Development) process(S4 Step); the iron bridge is formed on both the three dimensional bridge mold and the board(S3 Step). The solenoid inductor has iron bridge which has both conductive lines and conductive posts in one body and which has no limit for length. As all processes is undertaken below 120 deg.C, it has high compatibility, many kinds of boards can be used for it.
Abstract translation: 目的：提供包括空芯和磁芯的螺线管电感器，其长度没有限制，并且简单地制造。 构成：空气螺线管电感的方法包括以下步骤：准备在其上表面具有导线的板（S1步骤）; 通过MESD（多曝光和单次显影）工艺（S2步骤）在板上形成三维桥模; 在三维桥模和板上形成铁桥（S3步）。 具有磁芯的螺线管电感器的方法包括：在其上表面上具有导线的板（S1步骤）; 在板上形成牺牲层（S2步骤）; 板上有磁芯（S3 Step）; 通过SD（Single Development）工艺（S4 Step）在板上形成三维桥模; 在三维桥模和板上形成铁桥（S3步）。 螺线管电感器具有铁桥，其在一个主体中具有导电线和导电柱，并且对于长度没有限制。 由于所有工艺都在120摄氏度以下进行，因此具有很高的相容性，因此可以使用多种板材。
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公开(公告)号：KR100043192B1
公开(公告)日：1991-07-24
申请号：KR1019880010795
申请日：1988-08-25
Applicant: 한국과학기술원
IPC: H01L27/108
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公开(公告)号：KR1020170122430A
公开(公告)日：2017-11-06
申请号：KR1020160051352
申请日：2016-04-27
Applicant: 한국과학기술원
IPC: H01L27/12 , H01L29/786 , H01L21/324 , G02F1/1368 , H01L29/66 , H01L21/02
Abstract: 본발명에따른트랜지스터손상치료방법은, 2개의게이트전극을가지는복수의트랜지스터를포함하는디스플레이장치에서의트랜지스터손상치료방법으로, 상기복수의트랜지스터중 손상된트랜지스터를검출하는단계및 상기손상된트랜지스터의 2개의게이트전극에소정크기의전압을인가해상기손상된트랜지스터에줄열(joule heat)을발생시킴으로써손상을치료하는단계;를포함한다. 이에의하여, 디스플레이의사용중 불균일한소자공정에서야기된디스플레이용트랜지스터의손상치료가가능하므로, 심화된스트레스환경에서소자열화현상을매우짧은시간의전기적신호를이용해용이하게치료할수 있기때문에, 디스플레이의수명을획기적으로개선할수 있다. 아울러, 별도의추가적인회로나공정변경없이도트랜지스터의손상치료가가능하다.
Abstract translation: 根据本发明的晶体管损坏处理方法，显示装置eseoui晶体管损伤治疗方法的两组多个包括具有栅电极的晶体管，该阶段的两个栅极以及用于检测所述多个晶体管中的一个损坏的晶体管损坏的晶体管 它包括;将电压施加到预定的大小，其包括的电极：处理到晶体管被损坏所造成的焦耳热（焦耳热）的损坏。 以这种方式，由于通过使用非均匀性的显示引起在装置处理的显示晶体管的受损的治疗是可能的，可以很容易地使用很短的时间的电信号治疗退化现象深入应力的环境，因为，在显示器的寿命 可以大大改善。 此外，有可能损坏任何附加的电路，晶体管的治疗而没有任何处理的修改。
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