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公开(公告)号：KR101744924B1
公开(公告)日：2017-06-08
申请号：KR1020150183936
申请日：2015-12-22
Applicant: 한국화학연구원
Abstract: 본원발명은온도제어의정확도를향상시킬수 있는단결정성장장치및 이를이용한단결정의성장방법에대한것으로보다구체적으로는단결정성장용원료가투입되는도가니; 상기도가니를감싸면서가열하는가열수단; 상기도가니의온도를측정할수 있는제 1 온도측정수단; 상기도가니상부에구비되고선단에단결정의시드(seed)가고정되는단결정인상수단; 및상기단결정인상수단의길이방향축을따라내부에구비되며선단의단결정시드및 단결정인상수단의축 방향온도구배를측정할수 있는제 2 온도측정수단을포함하는것을특징으로하는단결정성장장치및 상기온도측정수단을이용한온도모니터링결과와단결정성장장치의파워제어장치를연동하여실시간으로용융물의온도를제어하는것을특징으로하는단결정성장방법에대한것이다. 본원발명에따른단결정성장장치는결정성장용원료의표면온도와단결정성장장치내부의온도를정확히측정하고단결정성장장치의파워제어장치와연동하여실시간으로용융물의온도를제어할수 있는장점이있어작업자간경험및 숙련도의차이로인한단결정의품질의편차를줄일수 있으므로단결정생산의효율성을향상시킬수 있다.
Abstract translation: 本发明具体地euroneun在坩埚比单晶生长装置及使用其生长单晶的方法，它可以提高温度控制的精度的生长单晶原料; 用于围绕坩埚加热的加热装置; 第一温度测量装置，用于测量坩埚的温度; 单晶提升装置，设置在坩埚上并在其顶端固定到单晶种子上; 并沿单晶提拉装置，用于将单晶籽和晶体生长装置，并且所述温度测量的纵向轴线设置在其中，其特征在于，第二温度测量，其可以测量单晶提拉装置，用于远端处的轴向温度梯度的装置 并且通过使用单晶生长设备的装置和功率控制装置联锁温度监测结果来实时控制熔体的温度。 根据本发明工作的单晶生长装置存在能够精确地测量和与所述单晶生长装置的表面温度，并在材料的装置中的晶体生长温度为晶体生长字距调整电力控制装置相结合实时控制的熔体的温度的优点 可以在单晶的品质的变化减少由于在经验和技能的差异可以提高单晶制造的效率。
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公开(公告)号：KR1020160144808A
公开(公告)日：2016-12-19
申请号：KR1020150081459
申请日：2015-06-09
Applicant: 한국화학연구원
Abstract: 본발명은개스킷을사용하지않고도고온및 고압의조건에서도기밀을유지할수 있는단결정성장용압력용기에대한것으로, 보다구체적으로는개구를가지며내열합금으로제조되는압력용기본체; 상기압력용기본체개구의내부에삽입되는내식성소재의라이너; 상기압력용기본체의상부에구성되는압력용기헤드; 상기압력용기헤드의중심부에구성되는유니온;을구비하며, 상기라이너와유니온간의기밀밀착에의하여압력용기의밀봉이유지되는단결정성장용압력용기에대한것이다. 또한, 본발명에따른압력반응용기는귀금속개스킷을사용하지않음에따른유지비용의절감과온도와압력의변화에도불구하고안정적으로반응기의압력을유지할수 있는장점이있다.
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公开(公告)号：KR1020130090124A
公开(公告)日：2013-08-13
申请号：KR1020120011219
申请日：2012-02-03
Applicant: 한국화학연구원
Abstract: PURPOSE: A raw material basket for growing a single crystal and a seed crystal combining device are provided to easily control an opening by including a replaceable baffle. CONSTITUTION: Raw materials are arranged in a basket (100). One or more racks (200) combine seed crystals. A baffle (300) is located between the basket and the rack. The basket is separated from the rack. The baffle is replaceable.
Abstract translation: 目的：提供用于生长单晶的原料篮和晶种组合装置，以通过包括可更换的挡板来容易地控制开口。 规定：原料安排在篮子里（100）。 一个或多个机架（200）组合晶种。 挡板（300）位于篮子和架子之间。 篮子与架子分离。 挡板是可更换的。
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公开(公告)号：KR1020130092053A
公开(公告)日：2013-08-20
申请号：KR1020120013515
申请日：2012-02-10
Applicant: 한국화학연구원
Abstract: PURPOSE: A method for fabricating an Sb-Te-based thermoelectric thin film is provided to obtain an Sb-Te-based thermoelectric material having an excellent ZT value by using a low temperature chemical deposition method without a thermal process or a post process. CONSTITUTION: An Sb deposition layer is formed on the upper part of a substrate. An Sb precursor is supplied to a chamber. The inside of the chamber is purged by using a purge gas. A reaction gas is supplied to the purged chamber. The inside of the chamber is purged by using the purge gas.
Abstract translation: 目的：提供一种制造Sb-Te类热电薄膜的方法，通过使用不具有热处理或后处理的低温化学沉积方法来获得具有优异ZT值的Sb-Te系热电材料。 构成：在基板的上部形成Sb沉积层。 将Sb前体供应到室。 通过使用吹扫气体清洗室的内部。 反应气体被供应到清洗室。 通过使用吹扫气体清洗室的内部。
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公开(公告)号：KR101282047B1
公开(公告)日：2013-07-04
申请号：KR1020110082479
申请日：2011-08-18
Applicant: 한국화학연구원
IPC: H01L31/0445 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 본 발명은 수계 용매를 이용한 CuInSe
2 입자의 제조방법에 관한 것으로, 상세하게, 본 발명에 따른 제조방법은 물 및 초산(CH
3 COOH)의 혼합 용매에 구리 분말, 인듐 분말 및 셀레늄 분말을 포함하는 금속분말 원료를 혼합하여 반응액을 제조하고, 오토클레이브를 이용하여 상기 반응액을 반응시켜 CuInSe
2 입자를 제조하는 방법에 관한 것이다.-
Patent Agency Ranking
公开(公告)号：KR1020130057790A
公开(公告)日：2013-06-03
申请号：KR1020110123712
申请日：2011-11-24
Applicant: 한국화학연구원
IPC: C09D11/52 , H01B1/14 , H01B1/20 , H01L31/042
CPC classification number: Y02E10/50 , C09D11/52 , C09D11/30 , H01B1/16 , H01L31/042
Abstract: PURPOSE: A manufacturing method of a nano-sized glass frit is provided to obtain high producibility in low costs by using a solution method, and to easily control the size and composition for a solar cell electrode. CONSTITUTION: A manufacturing method of a nano-sized glass frit comprises: a step of manufacturing glass frit nanoparticles by using a sol-gel synthesis method; and a step of mixing the glass frit nanoparticles, metallic nanoparticles, and organic vehicles. An electrode for a solar cell comprises a semiconductor substrate, an antireflection film formed on the substrate, a first conductive layer which is formed by spreading the conductive ink on the antireflective film, and a second conductive film formed of a conductive metal, on the first conductive layer. [Reference numerals] (AA) Raw material; (BB) Basic catalyst; (CC) React; (DD) Wash; (EE) Glass frit nanoparticles
Abstract translation: 目的：提供一种纳米尺寸玻璃料的制造方法，通过使用溶液法以低成本获得高可生产性，并且容易地控制太阳能电池电极的尺寸和组成。 构成：纳米尺寸玻璃料的制造方法包括：通过使用溶胶 - 凝胶合成法制造玻璃料纳米粒子的步骤; 以及混合玻璃料纳米颗粒，金属纳米颗粒和有机载体的步骤。 用于太阳能电池的电极包括半导体衬底，形成在衬底上的抗反射膜，通过在导电金属上形成导电油墨而形成的第一导电层和由导电金属形成的第二导电膜 导电层。 （附图标记）（AA）原料; （BB）碱性催化剂; （CC）反应; （DD）洗涤; （EE）玻璃料纳米粒子
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公开(公告)号：KR1020130020083A
公开(公告)日：2013-02-27
申请号：KR1020110082479
申请日：2011-08-18
Applicant: 한국화학연구원
IPC: H01L31/0445 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/0445 , H01L31/18
Abstract: PURPOSE: A method for fabricating CuInSe2 particles using a hydrothermal method for solar cells is provided to improve crystallization by using metal powder instead of poisonous organic metal precursor. CONSTITUTION: A metal powder raw material is mixed with a solvent including acetic acid and water to manufacture reaction solution. The metal powder includes copper powder, indium powder, and selenium powder. The reaction solution reacts with auto clave to manufacture CuInSe2 particles.
Abstract translation: 目的：提供使用太阳能电池的水热法制造CuInSe2颗粒的方法，以通过使用金属粉末代替有毒金属前体来改善结晶。 构成：将金属粉末原料与乙酸，水等溶剂混合，制作反应溶液。 金属粉末包括铜粉，铟粉和硒粉。 反应溶液与自动蒸馏器反应制造CuInSe2颗粒。
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公开(公告)号：KR101744923B1
公开(公告)日：2017-06-08
申请号：KR1020150081459
申请日：2015-06-09
Applicant: 한국화학연구원
Abstract: 본발명은개스킷을사용하지않고도고온및 고압의조건에서도기밀을유지할수 있는단결정성장용압력용기에대한것으로, 보다구체적으로는개구를가지며내열합금으로제조되는압력용기본체; 상기압력용기본체개구의내부에삽입되는내식성소재의라이너; 상기압력용기본체의상부에구성되는압력용기헤드; 상기압력용기헤드의중심부에구성되는유니온;을구비하며, 상기라이너와유니온간의기밀밀착에의하여압력용기의밀봉이유지되는단결정성장용압력용기에대한것이다. 또한, 본발명에따른압력반응용기는귀금속개스킷을사용하지않음에따른유지비용의절감과온도와압력의변화에도불구하고안정적으로반응기의압력을유지할수 있는장점이있다.
Abstract translation: 本发明的压力容器体具有，更具体地，涉及用于euroneun高温和晶体生长的压力容器能够保持在高压的条件下的气密性，而无需使用由耐热合金制成的垫片开口; 插入压力容器本体开口中的耐腐蚀材料的衬套; 压力容器头部，其形成在压力容器主体的上部; 压力套管在容器头部的中心配置;包括，涉及一种用于将被密封在压力容器由衬套和Union之间的紧密接触被保持在容器的单晶生长压力。 此外，根据本发明的反应压力容器的优点在于，可以在尽管存在维护成本的降低和温度和压力由于不使用贵金属垫圈改变和可靠地维持反应器的压力。
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公开(公告)号：KR1020140108885A
公开(公告)日：2014-09-15
申请号：KR1020130022728
申请日：2013-03-04
Applicant: 한국화학연구원
IPC: C30B13/14
Abstract: A pressure vessel for single crystal growth using shrink fitting of the present invention comprises: a pressure vessel body manufactured by a heat-resistant alloy; a liner manufactured with a material having corrosion resistance and inserted into the pressure vessel body; and a lower part supporter inserted through the lower part of the pressure vessel body and supporting the lower part of the liner, wherein the liner is inserted into the pressure vessel body after the pressure vessel body is heated with a heating furnace.
Abstract translation: 本发明的收缩配合用于单晶生长的压力容器包括：由耐热合金制成的压力容器主体; 由具有耐腐蚀性的材料制成的衬套插入到压力容器主体中; 以及通过压力容器本体的下部插入并支撑衬套的下部的下部支撑件，其中在用加热炉加压压力容器主体之后，将衬套插入压力容器主体。
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公开(公告)号：KR101336743B1
公开(公告)日：2013-12-03
申请号：KR1020120011219
申请日：2012-02-03
Applicant: 한국화학연구원
Abstract: 본 발명은 단결정 성장 장치에 있어서, 원료 물질들을 배치하는 바스켓, 종자 결정들을 결속할 수 있는 랙 및 상기 바스켓과 상기 랙 사이에 위치하는 대류조절판을 포함하고, 상기 바스켓과 상기 랙이 분리되어 상기 대류조절판을 교체할 수 있는 것을 특징으로 하는 것을 특징으로 한다.
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