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公开(公告)号：KR1020020057507A
公开(公告)日：2002-07-11
申请号：KR1020010000571
申请日：2001-01-05
Applicant: 한국과학기술연구원
IPC: C23C16/54
CPC classification number: C23C18/204 , C23C18/1641 , C23C18/2066 , H05K3/381 , H05K2203/072 , H05K2203/0723 , H05K2203/087 , H05K2203/092
Abstract: PURPOSE: A method is provided to improve adhesion force between polymer and metal layer or easily form the metal layer on the polymer having low plating property without a metal seed layer, and simplify treating processes when forming the metal layer on the polymer by electroless or electrolytic plating. CONSTITUTION: The method for improving adhesion force between polymer and metal comprises the processes of partially breaking polymer bonds on the surface of the polymer by irradiating ion beams having an energy onto the polymer as injecting a reactive gas into a vacuum chamber; injecting the reactive gas into the vacuum chamber so that atoms on the surface of the bond broken polymer are reacted with the reactive gas, thereby changing the property of the surface of the polymer into hydrophilic property; and depositing a metal layer on the surface of the polymer changed into the hydrophilic property, wherein an acceleration voltage of the ion beams is 300 to 2000 V, the ion is an ionization gas such as argon, nitrogen, hydrogen, helium, oxygen, ammonia, or a mixture thereof, the reactive gas is oxygen, nitrogen, ammonia, hydrogen, or a mixture thereof, and the deposition of the metal layer is done by an electroless or electrolytic plating.
Abstract translation: 目的：提供一种提高聚合物和金属层之间的粘合力或容易在不具有金属种子层的情况下形成具有低电镀性能的聚合物上的金属层的方法，并且简化在通过无电解或电解法在聚合物上形成金属层时的处理过程 电镀。 构成：提高聚合物和金属之间的粘合力的方法包括通过在聚合物中注入具有能量的离子束将反应性气体注入真空室来部分地破坏聚合物表面上的聚合物键的方法; 将反应性气体注入真空室中，使得断裂的聚合物表面上的原子与反应性气体反应，从而将聚合物表面的性能改变为亲水性; 并且在聚合物表面上沉积金属层变为亲水性，其中离子束的加速电压为300〜2000V，离子为氩，氮，氢，氦，氧，氨等离子化气体 或其混合物，反应性气体是氧，氮，氨，氢或其混合物，并且金属层的沉积通过无电解或电解电镀进行。
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公开(公告)号：KR100316586B1
公开(公告)日：2002-02-28
申请号：KR1019960011994
申请日：1996-04-19
Applicant: 한국과학기술연구원
Abstract: PURPOSE: Provided are a method for modifying a polymer surface, which decrease a contact angle of the polymer surface, or increase adhesiveness of the polymer surface, and a material having surface modified by the method. CONSTITUTION: The method comprises directly blowing a reactive gas selected from oxygen, nitrogen, hydrogen, ammonia, carbon monooxide, and a mixture thereof on the polymer surface, and then irradiating an ion particle having energy of 0.5-2.5 KeV to the polymer surface to decrease a contact angle or increase an adhesion in the polymer surface. The amount of blown gas is 1-8 ml/min. The polymer is selected from polycarbonate, polymethylmethacrylate, polyimide, teflon, polyvinylidene fluoride, polyethylene terephthalate, polyethylene, and silicone rubber.
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公开(公告)号：KR100307806B1
公开(公告)日：2001-11-30
申请号：KR1019980057666
申请日：1998-12-23
Applicant: 주식회사 삼양홀딩스 , 한국과학기술연구원
IPC: C08J7/00
Abstract: 본 발명은 이온빔을 이용하여 친수성으로 표면개질된 고분자 멤브레인 및 그 표면 개질방법에 관한 것으로, 고분자 멤브레인 표면으로, 반응성 기체를 유입시키면서 2000 eV 이하의 에너지를 가진 이온빔을 조사시킴으로써 상기 이온빔으로 고분자 멤브레인의 표면을 활성화시키면서 활성화된 고분자 멤브레인의 표면과 상기 반응성 기체를 반응시켜 그 표면에 친수성기를 형성시키는 고분자 멤브레인의 표면개질 방법과 그에 의해 표면개질된 고분자 멤브레인을 제공한다.
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公开(公告)号：KR1020010083477A
公开(公告)日：2001-09-01
申请号：KR1020000007024
申请日：2000-02-15
Applicant: 한국과학기술연구원
IPC: C23C14/20
CPC classification number: C23C14/022 , C23C14/086 , C23C14/22
Abstract: PURPOSE: A deposition method is provided which manufactures a transparent conductive thin film, an IO (Indium oxide) or ITO (Indium tin oxide) thin film at a low substrate temperature, particularly at an ordinary temperature using a treatment method which damages neither transparency of the polymer substrate nor chemical stability of the surface reforming layer of the polymer substrate. CONSTITUTION: The method for depositing an IO (Indium oxide) or ITO (Indium tin oxide) thin film on a polymer substrate comprises the processes of reforming the surface of the polymer substrate by irradiating an oxygen or argon ion beam to a polymer substrate under the vacuum and oxygen atmosphere in a constant accelerated energy; and depositing an IO or ITO thin film as irradiating oxygen, argon or a mixed ion beam of oxygen and argon onto the surface reformed polymer substrate under vacuum. The method for depositing an IO (Indium oxide) or ITO (Indium tin oxide) thin film on a polymer substrate comprises the processes of reforming the surface of the polymer substrate by irradiating an oxygen or argon ion beam to a polymer substrate under the vacuum in a constant accelerated energy; and depositing an IO or ITO thin film on the surface reformed polymer substrate by generating ion beams from a cold hallow cathode ion source using an ionic gas under vacuum and sputtering the polymer substrate to a target material consisting of In2O3, or In2O3 and SnO2.
Abstract translation: 目的：提供一种沉积方法，其在低衬底温度下，特别是在常温下使用不损害透明性的处理方法制造透明导电薄膜，IO（氧化铟）或ITO（氧化铟锡）薄膜） 聚合物基材和聚合物基材的表面改性层的化学稳定性。 构成：在聚合物基材上沉积IO（氧化铟）或ITO（氧化铟锡）薄膜的方法包括通过在氧气或氩离子束的下面将氧或氩离子束照射到聚合物基底上来重整聚合物基材的表面的方法 真空和氧气氛中恒定加速能量; 以及在真空下将氧，氩或氧和氩的混合离子束照射到表面改性的聚合物基底上来沉积IO或ITO薄膜。 用于在聚合物基材上沉积IO（氧化铟）或ITO（氧化铟锡）薄膜的方法包括通过在真空下将氧或氩离子束照射到聚合物基底上来重整聚合物基材的表面的方法 恒定加速能量; 以及通过在真空下使用离子气体从冷的正极阴离子源产生离子束并将聚合物衬底溅射到由In 2 O 3或In 2 O 3和SnO 2组成的靶材上，在表面改性的聚合物衬底上沉积IO或ITO薄膜。
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公开(公告)号：KR100288500B1
公开(公告)日：2001-05-02
申请号：KR1019960011996
申请日：1996-04-19
Applicant: 한국과학기술연구원
IPC: H01L21/265
Abstract: PURPOSE: A surface modifying method of a nitride materials and a surface modified nitride materials are provided to increase a contact force and to decrease a contact angle of a surface of a polymer by injecting directly a reaction gas into the surface of the polymer while irradiating an ion particle having a high energy into the surface of the polymer. CONSTITUTION: A surface modifying method is performed by injecting directly a reaction gas into a surface of a polymer while irradiating an ion particle having a high energy into the surface of the polymer. The reaction gas is selected form oxygen, nitrogen, hydrogen, ammonium, CO2 or a mixed gas thereof. An injecting amount of the gas is 1¯8 ml/min. The ion particle having the high energy is argon, oxygen, air, krypton or a mixed compound thereof. The energy of the ion particle is 0.5¯2.5 keV. An irradiating amount of the ion particle is 10¬14¯5x10¬16 ions/cm¬2.
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Patent Agency Ranking
公开(公告)号：KR1020010032692A
公开(公告)日：2001-04-25
申请号：KR1020007005975
申请日：1998-12-04
Applicant: 한국과학기술연구원
IPC: C23C14/46
CPC classification number: H01J37/3277 , C23C16/4417 , C23C16/486 , D06B19/00 , H01J37/317 , H01J2237/338
Abstract: PURPOSE: An apparatus for surface modification of polymer, metal and ceramic materials using ion beam is provided, which is capable of controlling the amount of a reaction gas and the energy of an ion beam, modifying the surface of a powder material and implementing a continuous surface modification of a material. CONSTITUTION: In case irradiating an ion beam onto the surface of a metallic thin film, oxide thin film or organic material (200) having curved surfaces, an attraction force or repulsion force between the ions from the ion gun (210) and the surfaces of the material is generated by applying a voltage from a voltage source (220) to the material to be surface-modified simultaneously while Ar+ ions from the ion gun are accelerated, so that a charge distortion may be obtained to modify the composition and shapes of the surface of the material.
Abstract translation: 目的：提供一种使用离子束对聚合物，金属和陶瓷材料进行表面改性的设备，其能够控制反应气体的量和离子束的能量，改变粉末材料的表面并实现连续的 表面改性材料。 构成：在将金属薄膜，氧化物薄膜或具有曲面的有机材料（200）的表面上照射离子束的情况下，离子枪（210）的离子与离子枪（210）的表面之间的吸引力或排斥力 通过将来自电压源（220）的电压同时施加到待表面改性的材料同时产生来自离子枪的Ar +离子的材料，从而可以获得电荷变形以改变组成和形状 表面材料。
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公开(公告)号：KR1020000039497A
公开(公告)日：2000-07-05
申请号：KR1019980054848
申请日：1998-12-14
Applicant: 주식회사 삼양홀딩스 , 한국과학기술연구원
IPC: C08J7/00
Abstract: PURPOSE: A polymer contact lens having an improved hydrophilic property is provided which a part of carbon of the activated surface is reacted with a reactive gas after activating the surface by irradiating less than 2,000 eV ion beam. CONSTITUTION: A surface modifying apparatus comprises a gas inlet part(20) introducing a reactive gas into a vacuum chamber(10), an ion source(30) producing ion beam, a substrate holder(40) and a vacuum pump(50). The polymer contact lens is built in the substrate holder(40) and the reactive gas is introduced into the vacuum chamber(10) through the gas inlet part(20). Ion beam having less than 2,000 eV is irradiated to activate the surface of the polymer contact lens from the ion source(30). The surface of the lens is reacted with the reactive gas to produce a hydrophilic group on the surface.
Abstract translation: 目的：提供具有改善的亲水性的聚合物隐形眼镜，通过照射小于2000eV的离子束，活化表面的一部分碳与活性气体反应，活化表面后。 构成：表面改性装置包括将反应性气体引入真空室（10）的气体入口部分（20），产生离子束的离子源（30），衬底保持器（40）和真空泵（50）。 聚合物隐形眼镜内置在基板支架（40）中，反应气体通过气体入口部分（20）引入真空室（10）。 照射小于2000eV的离子束从离子源（30）活化聚合物隐形眼镜的表面。 透镜的表面与反应性气体反应，以在表面上产生亲水基团。
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公开(公告)号：KR1019990047370A
公开(公告)日：1999-07-05
申请号：KR1019970065740
申请日：1997-12-04
Applicant: 한국과학기술연구원 , 주식회사 엘지이아이
IPC: C23C14/00
Abstract: 본 발명은, 냉동 공조용 금속 재료 기판의 고유한 성질에는 영향을 주지 않으면서 에이징 특성이 뛰어난 친수성 또는 소수성 중합막 기능을 가지는 그룹이 그 표면에 형성된 냉동 공조용 금속 재료를 제공하기 위하여, 불포화 지방족 탄화수소 단량체(monomer) 가스, 질소 가스, 분위기 가스 및 냉동 공조용 금속 재료의 표면으로부터 증발한 물질로부터 기인하는 양(+) 또는 음(-) 입자 및 라디칼로 이루어지는 플라즈마로부터 형성되는 친수성 또는 소수성 중합막 기능을 가지는 그룹으로, 상기 그룹은 CH, OH, NH, CN, CC 및 COC로 이루어지는 군으로부터 선택되는 둘 이상의 결합에 의해 형성되고, 상기 그룹내의 탄소, 질소 및 산소의 원자수 비율은 탄소 100에 대하여, 10 내지 30의 질소, 10 내지 30의 산소인 친수성 또는 소수성 중합막 기능을 가지는 그룹을 그 표� �에 가지는 냉동, 공조용 금속 재료 및 DC 방전과 HF 방전의 플라즈마를 이용한 상기 친수성 또는 소수성 중합막 기능을 가지는 그룹을 이용한 상기 금속 표면 개질 방법을 제공한다.
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公开(公告)号：KR1019970008415A
公开(公告)日：1997-02-24
申请号：KR1019950021554
申请日：1995-07-21
Applicant: 한국과학기술연구원
IPC: H01L21/3205
Abstract: 본 발명은 이온 클러스터 빔을 이용한 반도체 소자용 구리박막 제조방법에 관한 것으로, 증착할 구리를 도가니에 채우는 단계와, 기판을 증착위치에 올려 놓은 후, 증착조건의 진공을 유지하는 단계와, 구리가 채워진 도가니를 도가니 필라멘트와 도가니 밤바드먼트를 조절함으로써 클러스터 이온 빔을 형성시키는 단계와, 이온화 필라멘트와 이온화 전압을 조절하여 이온 빔의 일부분을 이온화시키는 단계와, 가속 전압을 조절하여 이온화된 클러스터 이온을 가속시켜 가속된 클러스터이온 빔과 중성 클러스터 이온 빔을 기판에 증착시키는 단계의 순서로 진행하는 구리박막 제조방법을 제공하여 반도체의 필요조건인 스텝 커버리지를 만족할 뿐 아니라 구리박막의 결정성이 우수해지고, 제조한 박막의 박막저항이 구리 본래의저항에 가까운 값을 갖 효과가 있으며, 기판과의 접착력이 우수하여 고품위 반도체 소자용으로 사용시 우수한 특성을 가지도록 한 것이다.
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