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    LITHOGRAPHIC APPARATUS AND SPECTRAL PURITY FILTER
    12.
    发明申请
    LITHOGRAPHIC APPARATUS AND SPECTRAL PURITY FILTER 审中-公开
    光刻设备和光谱滤光片

    公开(公告)号：WO2011117009A1

    公开(公告)日：2011-09-29

    申请号：PCT/EP2011/051546

    申请日：2011-02-03

    Applicant: ASML NETHERLANDS B.V. ,  MEDVEDEV, Viacheslav ,  BANINE, Vadim ,  KRIVTSUN, Vladimir ,  SOER, Wouter ,  YAKUNIN, Andrei

    Inventor： MEDVEDEV, Viacheslav ,  BANINE, Vadim ,  KRIVTSUN, Vladimir ,  SOER, Wouter ,  YAKUNIN, Andrei

    IPC: G03F7/20 ,  G21K1/06

    CPC classification number: G03F7/70575 ,  B82Y10/00 ,  G21K1/062 ,  G21K2201/061

    Abstract: A reflector includes a multi layer mirror structure configured to reflect radiation at a first wavelength, and one or more additional layers. The absorbance and refractive index at a second wavelength of the multi layer mirror structure and the one or more additional layers, and the thickness of the multi layer mirror structure and the one or more additional layers, are configured such that radiation of the second wavelength which is reflected from a surface of the reflector interferes in a destructive manner with radiation of the second wavelength which is reflected from within the reflector.

    Abstract translation: 反射器包括被配置为反射第一波长的辐射和一个或多个附加层的多层反射镜结构。 在多层反射镜结构和一个或多个附加层的第二波长处的吸光度和折射率以及多层反射镜结构和一个或多个附加层的厚度被配置为使得第二波长的辐射 从反射器的表面反射以破坏性方式干涉从反射器内反射的第二波长的辐射。

    LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    13.
    发明申请
    LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    LITHOGRAPHIC装置和装置制造方法

    公开(公告)号：WO2011072905A1

    公开(公告)日：2011-06-23

    申请号：PCT/EP2010/065406

    申请日：2010-10-14

    Applicant: ASML NETHERLANDS B.V. ,  SCACCABAROZZI, Luigi ,  BANINE, Vadim ,  IVANOV, Vladimir ,  YAKUNIN, Andrei

    Inventor： SCACCABAROZZI, Luigi ,  BANINE, Vadim ,  IVANOV, Vladimir ,  YAKUNIN, Andrei

    IPC: G03F7/20

    CPC classification number: G03F7/70916 ,  G03F7/7085 ,  G03F7/70866

    Abstract: Thermal radiation from a path of a patterned beam is detected. Particles in the path of the patterned beam heat up quickly and radiate energy at a wavelength shorter than that of a surrounding environment. Thus, by detecting the thermal radiation it is possible to detect any particles in the path of the projection beam. If particles are detected, a mask can be sealed or removed, such that particles will not adhere to it.

    Abstract translation: 检测来自图案化光束的路径的热辐射。 图案化光束的路径中的粒子快速加热，并以比周围环境的波长短的波长辐射能量。 因此，通过检测热辐射，可以检测投影光束的路径中的任何粒子。 如果检测到颗粒，则可以密封或去除掩模，使得颗粒不会粘附到其上。

    RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    14.
    发明申请
    RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    辐射源，光刻设备和器件制造方法

    公开(公告)号：WO2010018039A1

    公开(公告)日：2010-02-18

    申请号：PCT/EP2009/058898

    申请日：2009-07-13

    Applicant: ASML NETHERLANDS B.V. ,  KEMPEN, Antonius ,  BANINE, Vadim ,  IVANOV, Vladimir ,  LOOPSTRA, Erik

    Inventor： KEMPEN, Antonius ,  BANINE, Vadim ,  IVANOV, Vladimir ,  LOOPSTRA, Erik

    IPC: G03F7/20 ,  G21K1/00

    CPC classification number: G03F7/2008 ,  G03F7/70575 ,  G03F7/70916 ,  G03F7/70925 ,  G03F7/70983 ,  G21K1/00

    Abstract: A lithographic apparatus includes a source configured to generate a radiation beam comprising desired radiation and undesired radiation using a plasma, an illumination system configured to condition the radiation beam and to receive hydrogen gas during operation of the lithographic apparatus, and a support structure constructed to hold a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. A substrate table is constructed to hold a substrate, and a projection system is configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus is configured such that the radiation beam on entering the projection system includes at least 50% of the undesired radiation that is generated by the plasma and includes wavelengths of radiation that interact with the hydrogen gas to generate hydrogen radicals.

    Abstract translation: 光刻设备包括被配置为产生包含期望辐射和使用等离子体的不期望辐射的辐射束的源，被配置为调节辐射束并在光刻设备的操作期间接收氢气的照明系统，以及构造成保持 图案形成装置。 图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。 衬底台被构造成保持衬底，并且投影系统被配置为将图案化的辐射束投影到衬底的目标部分上。 光刻设备被配置为使得进入投影系统的辐射束包括由等离子体产生的不期望辐射的至少50％，并且包括与氢气相互作用以产生氢自由基的辐射波长。

    METHOD AND APPARATUS FOR GENERATING RADIATION
    15.
    发明申请
    METHOD AND APPARATUS FOR GENERATING RADIATION 审中-公开
    用于产生辐射的方法和装置

    公开(公告)号：WO2014067741A1

    公开(公告)日：2014-05-08

    申请号：PCT/EP2013/070616

    申请日：2013-10-03

    Applicant: ASML NETHERLANDS B.V.

    Inventor： BADIE, Ramin ,  BANINE, Vadim ,  DIJKSMAN, Johan ,  KEMPEN, Antonius ,  YAKUNIN, Andrei ,  VAN GREEVENBROEK, Hendrikus ,  WINKELS, Gerhardus, Koen

    IPC: G03F7/20 ,  H05G2/00

    CPC classification number: G03F7/70033 ,  H05G2/003 ,  H05G2/006 ,  H05G2/008

    Abstract: A radiation source (e.g., LPP - laser produced plasma source) for generation of extreme UV (EUV) radiation has at least two fuel particle streams having different trajectories. Each stream is directed to cross the path of an excitation (laser) beam focused at a plasma formation region, but the trajectories are spaced apart at the plasma formation region, and the streams phased, so that only one stream has a fuel particle in the plasma formation region at any time, and so that when a fuel particle from one stream is generating plasma and EUV radiation at the plasma generation region, other fuel particles are sufficiently spaced so as to be substantially unaffected by the plasma. The arrangement permits potential doubling of the radiation intensity achievable for a particular fuel particle size.

    Abstract translation: 用于产生极端UV（EUV）辐射的辐射源（例如，LPP-激光产生的等离子体源）具有至少两个具有不同轨迹的燃料粒子流。 每个流被引导以跨过等离子体形成区域聚焦的激发（激光）束的路径，但是轨迹在等离子体形成区域处被间隔开，并且流被相位化，使得仅一条流在 等离子体形成区域，并且使得当来自一个流的燃料粒子在等离子体产生区域产生等离子体和EUV辐射时，其它燃料颗粒被充分间隔开，以致基本上不受等离子体的影响。 该布置允许对于特定燃料粒子尺寸可实现的辐射强度的潜在加倍。

    METHODS OF PROVIDING PATTERNED EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY
    16.
    发明申请
    METHODS OF PROVIDING PATTERNED EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 审中-公开
    提供用于自组装块式共聚物的图案外延模板的方法用于器件平台

    公开(公告)号：WO2013152928A1

    公开(公告)日：2013-10-17

    申请号：PCT/EP2013/055681

    申请日：2013-03-19

    Applicant: ASML NETHERLANDS B.V.

    Inventor： WUISTER, Sander ,  BANINE, Vadim ,  FINDERS, Jozef ,  KOOLE, Roelof ,  PEETERS, Emiel ,  SINGH, Harmeet

    IPC: G03F7/00

    CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

    Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

    Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

    METHODS OF PROVIDING PATTERNED TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY
    17.
    发明申请
    METHODS OF PROVIDING PATTERNED TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 审中-公开
    提供用于自组装块式共聚物的图案模式的方法用于器件平台的使用

    公开(公告)号：WO2013143813A1

    公开(公告)日：2013-10-03

    申请号：PCT/EP2013/054502

    申请日：2013-03-06

    Applicant: ASML NETHERLANDS B.V.

    Inventor： SINGH, Harmeet ,  BANINE, Vadim ,  FINDERS, Jozef ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel

    IPC: G03F7/00 ,  G03F7/20

    CPC classification number: G03F7/162 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

    Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

    Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。

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