LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF

    公开(公告)号:US20190221728A1

    公开(公告)日:2019-07-18

    申请号:US16250774

    申请日:2019-01-17

    CPC classification number: H01L33/507 H01L25/13 H01L33/58

    Abstract: An embodiment of present disclosure discloses a light-emitting device which includes a first light-emitting unit, a second light-emitting unit, a first optic structure, a second optic structure, a first light-transmitting structure, a second light-transmitting structure, and a light-blocking structure. The first optic structure covers a top surface and a side surface of the first light-emitting unit, the second optic structure covers a top surface and a side surface of the second light-emitting unit. The first light-transmitting structure covers the first optic structure. The second light-transmitting structure covers the second optic structure. The light-blocking structure surrounds the first light-emitting unit and the second light-emitting unit, and covers the side surfaces of the first optic structure, the second optic structure, the first light-transmitting structure and the second light-transmitting structure.

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20170222102A1

    公开(公告)日:2017-08-03

    申请号:US15395917

    申请日:2016-12-30

    Abstract: A light-emitting device includes a light-emitting element, a wavelength conversion layer and a light pervious element. The light-emitting element includes a top surface, a bottom surface, a plurality of side surfaces connecting to the top surface and the bottom surface, and a first electrical contact formed on the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element to form a first thickness, has an average thickness, and includes a transparent binder and a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a light exiting surface and is disposed on the wavelength conversion layer. The D50 of the wavelength conversion particles is not great than 10 μm. A ratio of the average thickness to the D50 of the wavelength conversion layer is ranged from 6 to 20.

    BACKLIGHT MODULE
    17.
    发明公开
    BACKLIGHT MODULE 审中-公开

    公开(公告)号:US20230176417A1

    公开(公告)日:2023-06-08

    申请号:US18072264

    申请日:2022-11-30

    CPC classification number: G02F1/133603 G02F1/133605 G02F1/133611

    Abstract: A backlight module is provided. The backlight module includes a substrate having a substrate surface, a conductive layer disposed on the substrate surface, a plurality of LED chips disposed on and electrically connected to the conductive layer, a light-permeable layer having a light-permeable surface away from the substrate surface, and a pattern layer disposed on the light-permeable surface and having a plurality of first patterns corresponding to and respectively located above the plurality of LED chips. Wherein, each first pattern has a maximum width. A maximum width of one first pattern satisfies the following formula:


    WP≥2n(TE−TL)(1−1/n2)1/2+WL;

    wherein WP is the maximum width of one first pattern, n is a refractivity of the light-permeable layer, TE is a thickness of the light-permeable layer, TL is a thickness of the LED chip, WL is a maximum width of LED chip corresponding to the first pattern.

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