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公开(公告)号:US20170331001A1
公开(公告)日:2017-11-16
申请号:US15591544
申请日:2017-05-10
Applicant: EPISTAR CORPORATION
Inventor: Cheng-Feng YU , Ching-Yuan TSAI , Yao-Ru CHANG , Hsin-Chan CHUNG , Shih-Chang LEE , Wen-Luh LIAO , Cheng-Hsing CHIANG , Kuo-Feng HUANG , Hsu-Hsuan TENG , Hung-Ta CHENG , Yung-Fu CHANG
CPC classification number: H01L33/06 , H01L33/002 , H01L33/0079 , H01L33/30 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0066
Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
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公开(公告)号:US20160141459A1
公开(公告)日:2016-05-19
申请号:US15004450
申请日:2016-01-22
Applicant: EPISTAR CORPORATION
Inventor: Wen-Luh LIAO , Hung-Ta CHENG , Yao-Ru CHANG , Shih-I CHEN , Chia-Liang HSU
CPC classification number: H01L33/46 , H01L33/06 , H01L33/36 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/44
Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part.
Abstract translation: 提供了一种发光装置。 发光装置包括:具有活性层的发光叠层; 在发光叠层上的电极结构,包括第一电极和延伸电极,该第一电极和延伸电极沿着第一延伸方向从所述第一电极朝向所述发光装置的边缘突出; 在所述发光层与所述电极结构之间的透明绝缘层,其中所述透明绝缘层包括第一部分和在所述第一部分朝向所述发光装置的边缘沿第二延伸方向突出的延伸部分; 其中,远离所述透明绝缘层的所述第一电极的表面的表面积小于远离所述发光层的所述透明绝缘层的表面的表面积,所述第一电极位于所述第一部分的正上方,并且 延伸电极的一部分在扩展部分的正上方。
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公开(公告)号:US20200075807A1
公开(公告)日:2020-03-05
申请号:US16549822
申请日:2019-08-23
Applicant: EPISTAR CORPORATION
Inventor: Yung-Fu CHANG , Fan-Lei WU , Shih-Chang LEE , Wen-Luh LIAO , Hung-Ta CHENG , Chih-Chaing YANG , Yao-Ru CHANG , Yi HSIAO , Hsiang CHANG
IPC: H01L33/20
Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.
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公开(公告)号:US20200006595A1
公开(公告)日:2020-01-02
申请号:US16568546
申请日:2019-09-12
Applicant: EPISTAR CORPORATION
Inventor: Wen-Luh LIAO , Chih-Chiang LU , Shih-Chang LEE , Hung-Ta CHENG , Hsin-Chan CHUNG , Yi-Chieh LIN
IPC: H01L33/20
Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.
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公开(公告)号:US20170317238A1
公开(公告)日:2017-11-02
申请号:US15653038
申请日:2017-07-18
Applicant: EPISTAR CORPORATION
Inventor: Yao-Ru CHANG , Wen-Luh LIAO , Chun-Yu LIN , Hsin-Chan CHUNG , Hung-Ta CHENG
CPC classification number: H01L33/44 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/305 , H01L33/38 , H01L33/62
Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.
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公开(公告)号:US20170256678A1
公开(公告)日:2017-09-07
申请号:US15602421
申请日:2017-05-23
Applicant: EPISTAR CORPORATION
Inventor: Wen-Luh LIAO , Shao-Ping LU , Hung-Ta CHENG , Shih-I CHEN , Chia-Liang HSU , Shou-Chin WEI , Ching-Pei LIN , Yu-Ren PENG , Chien-Fu HUANG , Wei-Yu CHEN , Chun-Hsien CHANG
Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.
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公开(公告)号:US20150102285A1
公开(公告)日:2015-04-16
申请号:US14515147
申请日:2014-10-15
Applicant: EPISTAR CORPORATION
Inventor: Wen-Luh LIAO , Hung-Ta CHENG , Yao-Ru CHANG , Shih-I CHEN , Chia-Liang HSU
CPC classification number: H01L33/46 , H01L33/06 , H01L33/36 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/44
Abstract: A light-emitting device comprises: a light-emitting stack having an active layer; a transparent insulating layer on the light-emitting stack; and an electrode structure having a first electrode on the transparent insulating layer; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the reflectivity of the transparent insulating layer is between 1 and 3.4 both inclusive, and the transmittance of the transparent insulating layer is greater than 80%.
Abstract translation: 发光装置包括:具有活性层的发光叠层; 在发光叠层上的透明绝缘层; 以及在透明绝缘层上具有第一电极的电极结构; 其中,所述第一电极的远离所述透明绝缘层的表面的表面积小于远离所述发光层的所述透明绝缘层的表面的表面积,所述透明绝缘层的反射率在1〜 3.4,透明绝缘层的透射率大于80%。
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